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[文献書誌] Y.Nanishi, Y.Saito, T.Yamaguchi: "RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys"Jpn.J.Appl.Phys.. 42(Invited). 2549-2559 (2003)
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[文献書誌] Y.Nanishi, Y.Saito, T.Yamaguchi, T.Araki, A.Suzuki他3名: "MBE-Growth, Characterization and Properties of InN and InGaN"phys.stat.sol.(a). 200. 202-208 (2003)
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[文献書誌] 名西〓之, 荒木努, 宮嶋孝夫: "InNおよびInGaNの結晶成長と構造および特性の評価"応用物理. 72. 565-571 (2003)
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[文献書誌] T.Araki, K.Mizuo, T.Yamaguchi, Y.Saito, Y.Nanishi: "TEM Characterization of InN films grown by RF-MBE"phys.stat.sol.(c). 0. 2798-2801 (2003)
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[文献書誌] F.Matsuda, Y.Saito, T.Araki, Y.Nanishi他4名: "Influence of substrate polarity on growth of InN films by RF-MBE"phys.stat.sol.(c). 0. 2810-2813 (2003)
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[文献書誌] T.Yamaguchi, Y.Saito, T.Araki, A.Suzuki, Y.Nanishi他2名: "Effect of AIN buffer layer on the growth of InN epitaxial film on Si substrate"phys.stat.sol.(b). 240. 429-432 (2003)