Development of nanofreezer substrate for realizing room-temperature operation of single-electron and spin devices
Project/Area Number |
24651168
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Microdevices/Nanodevices
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Research Institution | Shizuoka University |
Principal Investigator |
IKEDA Hiroya 静岡大学, 電子工学研究所, 准教授 (00262882)
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Co-Investigator(Kenkyū-buntansha) |
HAYAKAWA Yasuhiro 静岡大学, 電子工学研究所, 教授 (00115453)
SHIMOMURA Masaru 静岡大学, 工学研究科, 准教授 (20292279)
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Project Period (FY) |
2012-04-01 – 2015-03-31
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Project Status |
Completed (Fiscal Year 2014)
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Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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Keywords | 熱電変換 / ベルチェ冷却 / ナノワイヤ / 量子効果デバイス / ペルチェ冷却 |
Outline of Final Research Achievements |
In this study, we have investigated a novel cooling substrate based on thermoelectrics, named "nanofreezer substrate", in order to operate the quantum effect devices at room temperature. For enhancing the cooling efficiency, Seebeck coefficient, which is thermoelectromotive force at a temperature difference of 1K and an important parameter determining the efficiency, of SiGe material was measured. The Seebeck coefficient usually consists of contributions from electrons and lattice vibration, and we clarified the physical factors determining the lattice-vibration component. In addition, we have proposed a new fabrication process for the actual refrigerator and confirmed its fundamental properties.
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Report
(4 results)
Research Products
(94 results)
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[Journal Article] High power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing method2015
Author(s)
M. Omprakash, M. Arivanandhan, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, D. Aswal, S. Bhattacharya, Y. Okano, T. Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa
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Journal Title
Journal of Crystal Growth & Design
Volume: 15
Issue: 3
Pages: 1380-1388
DOI
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Peer Reviewed / Open Access
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[Journal Article] Analysis of dissolution and growth process of SiGe alloy semiconductor based on penetrated X-ray intensities2014
Author(s)
M. Omprakash, M. Arivanandhan, R. Arun Kumar, H. Morii, T. Aoki, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, S. Moorthy Babu, Y. Inatomi and Y. Hayakawa
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Journal Title
J. Alloy and Compounds
Volume: 590
Pages: 96-101
DOI
Related Report
Peer Reviewed
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[Journal Article] The dissolution process of Si into Ge melt and SiGe growth mechanism by x-ray penetration method2013
Author(s)
M. Omprakash, M. Arivanandhan, R.A. Kumar, H. Morii, T. Aoki, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa
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Journal Title
信学技報
Volume: ED2013-55, SDM2013-29
Pages: 27-31
NAID
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[Presentation] Thermoelectric properties of compositionally homogeneous p and n-type SiGe bulk crystals2015
Author(s)
M.Omprakash, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y. Inatomi, S. Bhattacharya, D.K. Aswal, S.M. Babu, Y. Hayakawa
Organizer
第62回応用物理学会春季学術講演会
Place of Presentation
東海大学(神奈川県,平塚市)
Year and Date
2015-03-11 – 2015-03-14
Related Report
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[Presentation] Growth of compositionally homogeneous p-type SiGe bulk and thermoelectric properties2015
Author(s)
M.Omprakash, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, D.K. Aswal, S. Bhattacharya, Y.Okano, T.Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa
Organizer
2015 International Symposium Toward the Future of Advanced Researches
Place of Presentation
Shizuoka Univ.(Hamamatsu, Shizuoka)
Year and Date
2015-01-27 – 2015-01-28
Related Report
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[Presentation] Thermoelectric properties of compositionally homogeneous Ga-doped SiGe bulk crystals2014
Author(s)
Y. Hayakawa, M. Omprakash, M. Arivanandhan, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, Y. Inatomi, S.M. Babu
Organizer
12th European Conference on Thermoelectrics
Place of Presentation
Madrid, Spain
Year and Date
2014-09-24 – 2014-09-26
Related Report
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[Presentation] In-situ observation of dissolution and growth processes of Si1-xGex under different temperature gradients2014
Author(s)
M. Omprakash, M. Arivanandhan, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa
Organizer
13th International Conference on Global Research and Education (InterAcademia 2014)
Place of Presentation
Riga, Latvia
Year and Date
2014-09-10 – 2014-09-12
Related Report
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[Presentation] Thermoelectric properties of Ga doped SiGe bulk crystal2014
Author(s)
M.Omprakash, M.Arivanandhan, P.Anandan, H.Morii, T.AokiI, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa
Organizer
第61回応用物理学会春季学術講演会
Place of Presentation
青山学院大学(神奈川)
Related Report
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[Presentation] Temperature gradient effect on dissolution and growth process of SiGe bulk crystal2013
Author(s)
M. Omprakash, M. Arivanandhan, R.A. Kumar, H. Morii, T. Aoki, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa
Organizer
15th Takayanagi Kenjiro Memorial Symposium
Place of Presentation
静岡大学(静岡)
Related Report
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[Presentation] Investigation on growth mechanism of SiGe by X-ray penetration method2013
Author(s)
O. Muthusamy, A. Mukannnan, AR. Kumar, H. Morii, T. Aoki, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, Y. Inatomi, M.S. Babu, Y. Hayakawa
Organizer
32th International Conference on Thermoelectrics
Place of Presentation
神戸国際会議場(兵庫)
Related Report
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[Presentation] The dissolution process of Si into Ge melt and SiGe growth mmechanism by x-ray penetration method2013
Author(s)
M.Omprakash, M.Arivanandhan, R.A.Kumar, H.Morii, T.AokiI, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa
Organizer
電子情報通信学会ED研・CPM研・SDM研合同5月研究会
Place of Presentation
静岡大学(静岡)
Related Report
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[Presentation] Effect of solute transport on dissolution of Si into Ge melt and growth of SiGe2013
Author(s)
M.Omprakash, M.Arivanandhan, R.A.Kumar, H.Morii, T.AokiI, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa
Organizer
第60回応用物理学会春季学術講演会
Place of Presentation
神奈川工科大学(神奈川)
Related Report
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[Presentation] Growth of compositionally homogeneous Si1-xGex and Mg2Si1-xGex crystals by novel method and their thermoelectric properties2012
Author(s)
Y. Hayakawa, M. Arivanandhan, M. Omprakash, R.A. Kumar, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, Y. Okano, S.M. Babu, D.K. Aswal, S. Bhattacharya, Y. Inatomi
Organizer
International Workshop on Crystal Growth and Characterization of Advanced Materials and Devices
Place of Presentation
Anna University (Chennai, India)
Related Report
Invited
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[Presentation] In-situ observation of dissolution, growth processes of Si into Ge melt by x-ray penetration method2012
Author(s)
M. Omprakash, M. Arivanandhan, R.A. Kumar, H. Morii, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa
Organizer
14th Takayanagi Memorial Symposium
Place of Presentation
Shizuoka University (Shizuoka)
Related Report
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[Presentation] Thermoelectric characteristics of compositionally homogeneous Si1-xGex bulk crystals2012
Author(s)
M. Arivanandhan, M. Omprakash, R.A. Kumar, T. Koyama, Y. Momose, A. Tanaka, H. Ikeda, G. Ravi, H. Tatsuoka, A. Ishida, S. Bhattacharya, D.K. Aswal, S.M. Babu, Y. Inatomi, Y. Hayakawa
Organizer
14th Takayanagi Memorial Symposium
Place of Presentation
Shizuoka University (Shizuoka)
Related Report
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