| Budget Amount *help |
¥129,740,000 (Direct Cost: ¥99,800,000、Indirect Cost: ¥29,940,000)
Fiscal Year 2020: ¥21,710,000 (Direct Cost: ¥16,700,000、Indirect Cost: ¥5,010,000)
Fiscal Year 2019: ¥20,800,000 (Direct Cost: ¥16,000,000、Indirect Cost: ¥4,800,000)
Fiscal Year 2018: ¥38,480,000 (Direct Cost: ¥29,600,000、Indirect Cost: ¥8,880,000)
Fiscal Year 2017: ¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2016: ¥30,290,000 (Direct Cost: ¥23,300,000、Indirect Cost: ¥6,990,000)
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| Outline of Final Research Achievements |
A new epitaxial growth technique, called a pulsed excitation deposition enabled to introduce high density of singularity structures (point defects) into group III nitride semiconductor thin films by controlling the time domain of raw material supply in a highly excited (non-equilibrium) state. Specifically, the pulsed excitation deposition provided higher doping capability of substitutional impurity atoms such as Si, Ge, and Mg into the nitride semiconductor thin films with better reproducibility than nearly thermal-equilibrium conventional epitaxial growth techniques. Such a high-density singularity structures in group III nitride thin films yielded new insight and opportunity to develop a novel vertical p-type GaN Schottky barrier diodes and integrated dual color micro-LEDs.
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