| Budget Amount *help |
¥109,720,000 (Direct Cost: ¥84,400,000、Indirect Cost: ¥25,320,000)
Fiscal Year 2020: ¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2019: ¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2018: ¥28,860,000 (Direct Cost: ¥22,200,000、Indirect Cost: ¥6,660,000)
Fiscal Year 2017: ¥37,570,000 (Direct Cost: ¥28,900,000、Indirect Cost: ¥8,670,000)
Fiscal Year 2016: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
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| Outline of Final Research Achievements |
We conducted research aimed at developing electronic applications of science that deepens crystal growth and crystal control of singular structures. The technique of producing a high-quality AlN film as a two-dimensional singular structure on a sapphire substrate is extremely important, but the AlN film on the sapphire substrate has high-density penetrating dislocations. We found that the crystallinity of AlN can be significantly improved by using high-temperature annealing of sputtering-deposited AlN on a sapphie, and clarified the mechanism. In addition, deep-ultraviolet LEDs and high-speed electron mobility transistors were manufactured using sputtered and annealed AlN templates, demonstrating the usefulness of high-quality AlN templates.
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