| Budget Amount *help |
¥127,140,000 (Direct Cost: ¥97,800,000、Indirect Cost: ¥29,340,000)
Fiscal Year 2020: ¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000)
Fiscal Year 2019: ¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000)
Fiscal Year 2018: ¥14,950,000 (Direct Cost: ¥11,500,000、Indirect Cost: ¥3,450,000)
Fiscal Year 2017: ¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
Fiscal Year 2016: ¥54,730,000 (Direct Cost: ¥42,100,000、Indirect Cost: ¥12,630,000)
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| Outline of Final Research Achievements |
Crystal growth mechanism, extended defect formation mechanism and optical properties of a singularity structure composed of GaN nanowire and GaInN-based multi-quantum shells (MQSs) were studied. Tunnel junction to enhance current injection to the MQS was also investigated. Due to a great influence of surface energy in the small-scale singularity structure, shape of the nanowire/MQS structure was found to be greatly dependent on the growth condition. By applying this feature positively, particular shapes of the structure such as very high aspect ratio GaN nanowire could be grown reproducibly. The selective area growth technique made it possible to form periodic nanowire/MQS arrangement was obtained, and room-temperature pulsed operation of a blue MQS laser was demonstrated.
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