| Co-Investigator(Kenkyū-buntansha) |
村上 尚 東京農工大学, 工学(系)研究科(研究院), 准教授 (90401455)
山口 智広 工学院大学, 先進工学部, 准教授 (50454517)
富樫 理恵 上智大学, 理工学部, 助教 (50444112)
後藤 健 東京農工大学, 工学(系)研究科(研究院), 助教 (50572856)
小西 敬太 東京農工大学, 工学(系)研究科(研究院), 特任助教 (50805257)
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| Budget Amount *help |
¥60,190,000 (Direct Cost: ¥46,300,000、Indirect Cost: ¥13,890,000)
Fiscal Year 2020: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2019: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2018: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2017: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2016: ¥12,870,000 (Direct Cost: ¥9,900,000、Indirect Cost: ¥2,970,000)
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| Outline of Final Research Achievements |
It has been known that the group-III sesquioxide semiconductor crystals (Ga2O3, In2O3, and Al2O3) each have one stable phase and multiple metastable phases (polymorphs). In order to fabricate a device using these crystals, it is inevitable to clarify the key conditions for the growth of stable and metastable phases and to elucidate the characteristics of each phase. In this study, these crystals were grown on a variety of substrates (sapphire, GaN, and Ga2O3) by multiple chemical vapor deposition (CVD) methods such as mist CVD and halide vapor phase epitaxy (HVPE). A series of results revealed that growth of metastable phases occurs due to the constraints of the lattice structure of the substrates and molecular structure of the source gases under non-thermal equilibrium. This guideline has paved the way for various device applications.
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