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Development of diamond electron device using III-nitride nanolaminate singularity structure

Planned Research

Project AreaMaterials Science and Advanced Elecronics created by singularity
Project/Area Number 16H06419
Research Category

Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionNational Institute for Materials Science

Principal Investigator

KOIDE Yasuo  国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, グループリーダー (70195650)

Co-Investigator(Kenkyū-buntansha) 劉 江偉  国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 独立研究者 (30732119)
廖 梅勇  国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主幹研究員 (70528950)
井村 将隆  国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員 (80465971)
Project Period (FY) 2016-06-30 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥80,340,000 (Direct Cost: ¥61,800,000、Indirect Cost: ¥18,540,000)
Fiscal Year 2020: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
Fiscal Year 2019: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
Fiscal Year 2018: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
Fiscal Year 2017: ¥14,040,000 (Direct Cost: ¥10,800,000、Indirect Cost: ¥3,240,000)
Fiscal Year 2016: ¥37,570,000 (Direct Cost: ¥28,900,000、Indirect Cost: ¥8,670,000)
Keywordsダイヤモンド / Ⅲ族窒化物 / ヘテロ接合 / ナノラミネート構造 / 電界効果トランジスタ / III族窒化物 / ナノラミネート薄膜 / II族窒化物 / トランジスタ / III族窒化物
Outline of Final Research Achievements

We have developed an atomic layer deposition (ALD) MOVPE technique and established the ALD method of III-nitride semiconductors by pulsed supply of organometallic compounds and ammonia. Nanolaminate films of [AlN(0.2nm)/GaN(0.04nm)] (250 pairs) were grown, and a 3.6-fold increase in dielectric constant was observed compared to the AlN single film with a same thickness. The result showed for the first time in the world the dielectric constant enhancement of group III nitride semiconductor nanolaminate films. Although the application to diamond FETs could not be achieved, we successfully fabricated and operated the first diamond MOSFET using TiOx[x nm]/AlOx[y nm] (x, y = 1 to 2 nm) nanolaminate films as the gate structure as a result of overseas collaborative research.

Academic Significance and Societal Importance of the Research Achievements

次世代省エネルギーパワー半導体の候補材料として、熱放散性や熱安定性の高いダイヤモンド電界効果トランジスタを開発することを目的とした。AlN/GaNナノラミネート膜を作製し、同程度膜厚のAlN単層膜に比べて3.6倍の誘電率増加を観測し、III族窒化物半導体のナノラミネート膜における誘電率の増大効果を世界で初めて実証するとともに、高誘電率TiOx/AlOxナノラミネート膜をゲート構造に応用したダイヤモンドMOSFETを初めて試作し動作に成功した。誘電率増大化の学術的メカニズムは今後のパワー半導体デバイスに展開する基礎となることが示唆された。

Report

(6 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • Research Products

    (60 results)

All 2021 2020 2019 2018 2017 2016 Other

All Int'l Joint Research (2 results) Journal Article (30 results) (of which Int'l Joint Research: 18 results,  Peer Reviewed: 30 results,  Open Access: 2 results,  Acknowledgement Compliant: 5 results) Presentation (22 results) (of which Int'l Joint Research: 15 results,  Invited: 17 results) Book (3 results) Remarks (3 results)

  • [Int'l Joint Research] Department of MSE/University of Texas, Dallas(米国)

    • Related Report
      2020 Annual Research Report
  • [Int'l Joint Research] Orlando Auciello教授/テキサス大学ダラス校(米国)

    • Related Report
      2018 Annual Research Report
  • [Journal Article] Fixed charges investigation in Al2O3/hydrogenated-diamond metal-oxide-semiconductor capacitors2020

    • Author(s)
      J. W. Liu, H. Oosato, B. Da, Y. Koide
    • Journal Title

      Applied Physics Letters

      Volume: 117 Issue: 16 Pages: 163502-163502

    • DOI

      10.1063/5.0023086

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for MOS Capacitors and MOSFETs2020

    • Author(s)
      Jiangwei Liu, Orlando Auciello, Elida de Obaldia, Bo Da, Yasuo Koide
    • Journal Title

      Carbon

      Volume: 172 Pages: 112-121

    • DOI

      10.1016/j.carbon.2020.10.031

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Enhanced magnetic sensing performance of diamond MEMS magnetic sensor with boron-doped FeGa film2020

    • Author(s)
      Zilong Zhang, Liwen Sang, Jian Huang, Waiyan Chen, Linjun Wang, Yukiko Takahashi, Seiji Mitani, Yasuo Koide, Satoshi Koizumi, Meiyong Liao
    • Journal Title

      Carbon

      Volume: 170 Pages: 294-301

    • DOI

      10.1016/j.carbon.2020.08.049

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Precise characterization of atomic-scale corrosion of single crystal diamond in H2 plasma based on MEMS/NEMS2020

    • Author(s)
      Wu Haihua、Zhang Zilong、Sang Liwen、Li Tiefu、You Jianqiang、Imura Masataka、Koide Yasuo、Liao Meiyong
    • Journal Title

      Corrosion Science

      Volume: 170 Pages: 108651-108651

    • DOI

      10.1016/j.corsci.2020.108651

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electrodes on the same hydrogen-terminated diamond2020

    • Author(s)
      Xiaolu Yuan, Jiangwei Liu, Siwu Shao, Jinlong Liu, Junjun Wei, Bo Da, Chengming Li, Yasuo Koide
    • Journal Title

      AIP Advances

      Volume: 10 Issue: 5 Pages: 55114-55114

    • DOI

      10.1063/5.0008167

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Enhancing Delta E Effect at High Temperatures of Galfenol/Ti/Single-Crystal Diamond Resonators for Magnetic Sensing2020

    • Author(s)
      Zilong Zhang, Haihua Wu, Liwen Sang, Yukiko Takahashi, Jian Huang, Linjun Wang, Masaya Toda, Indianto Mohammad Akita, Yasuo Koide, Satoshi Koizumi, Meiyong Liao
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 12 Issue: 20 Pages: 23155-23164

    • DOI

      10.1021/acsami.0c06593

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Coupling of magneto-strictive FeGa film with single-crystal diamond MEMS resonator for high-reliability magnetic sensing at high temperatures2020

    • Author(s)
      Zhang Zilong、Wu Yuanzhao、Sang Liwen、Wu Haihua、Huang Jian、Wang Linjun、Takahashi Yukiko、Li Runwei、Koizumi Satoshi、Toda Masaya、Akita Indianto Mohammad、Koide Yasuo、Liao Meiyong
    • Journal Title

      Materials Research Letters

      Volume: 8 Issue: 5 Pages: 180-186

    • DOI

      10.1080/21663831.2020.1734680

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors2020

    • Author(s)
      Liu Jiangwei、Teraji Tokuyuki、Da Bo、Ohsato Hirotaka、Koide Yasuo
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 67 Issue: 4 Pages: 1680-1685

    • DOI

      10.1109/ted.2020.2972979

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrical readout/characterization of single crystal diamond (SCD) cantilever resonators2020

    • Author(s)
      Wu Haihua、Zhang Zilong、Sang Liwen、Li Tiefu、You Jianqiang、Lu Yingjie、Koide Yasuo、Liao Meiyong
    • Journal Title

      Diamond and Related Materials

      Volume: 103 Pages: 107711-107711

    • DOI

      10.1016/j.diamond.2020.107711

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Operations of hydrogenated diamond metal-oxide-semiconductor field-effect transistors after annealing at 500 C2019

    • Author(s)
      J-W Liu, H Oosato, B Da, T Teraji, A Kobayashi, H Fujioka, Y Koide
    • Journal Title

      J. Physics D: Applied Physics

      Volume: 52 Issue: 31 Pages: 315104-315104

    • DOI

      10.1088/1361-6463/ab1e31

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Current Output Hydrogenated Diamond Triple-Gate MOSFETs2019

    • Author(s)
      Liu Jiangwei、Ohsato Hirotaka、Da Bo、Koide Yasuo
    • Journal Title

      IEEE Journal of the Electron Devices Society

      Volume: 7 Pages: 561-565

    • DOI

      10.1109/jeds.2019.2915250

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors2019

    • Author(s)
      Liu Jiangwei、Teraji Tokuyuki、Da Bo、Koide Yasuo
    • Journal Title

      IEEE Electron Device Letters

      Volume: 40 Issue: 11 Pages: 1748-1751

    • DOI

      10.1109/led.2019.2942967

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High-k oxides on hydrogenated-diamond for metal-oxide-semiconductor field-effect transistors2019

    • Author(s)
      Y. Koide
    • Journal Title

      IEEE International Conference on Microelectronic Test Structures

      Volume: March Pages: 40-46

    • DOI

      10.1109/icmts.2019.8730974

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Threshold Voltage Instability of Diamond Metal-Oxide-Semiconductor Field-Effect Transistors Based on 2D Hole Gas2019

    • Author(s)
      M. Yang, L. Sang, M. Y. Liao, M. Imura, H. Li, Y. Koide
    • Journal Title

      Physica Status Solidi (A) Applications and Materials Science

      Volume: 216 Issue: 24 Pages: 1900538-1900538

    • DOI

      10.1002/pssa.201900538

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Energy‐Efficient Metal-Insulator-Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases2019

    • Author(s)
      Liao Meiyong、Sang Liwen、Shimaoka Takehiro、Imura Masataka、Koizumi Satoshi、Koide Yasuo
    • Journal Title

      Advanced Electronic Materials

      Volume: 1 Issue: 5 Pages: 1800832-1800832

    • DOI

      10.1002/aelm.201800832

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Annealing effects on hydrogenated diamond NOR logic circuits2018

    • Author(s)
      Jiangwei Liu, Hirotaka, Oosato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide
    • Journal Title

      Applied Physics Letters

      Volume: 112 Issue: 15 Pages: 153501-153501

    • DOI

      10.1063/1.5022590

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface2018

    • Author(s)
      Kongping Wu, Meiyong Liao, Liwen Sang, Jiangwei Liu, Masataka Imura, Haitao Ye, Yasuo Koide
    • Journal Title

      Journal of Applied Physics

      Volume: 123 Issue: 16 Pages: 161599-161599

    • DOI

      10.1063/1.5002176

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Surface and Bulk Electronic Structures of Unintentionally and Mg Doped In0.7Ga0.3N Epilayer by Hard X-ray Photoelectron Spectroscopy2018

    • Author(s)
      M. Imura, S. Tsuda, H. Takeda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
    • Journal Title

      J. Appl. Phys.

      Volume: 123 Issue: 9 Pages: 095701-1

    • DOI

      10.1063/1.5016574

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] An overview of high-k oxides on hydrogenated-diamond for metal-oxide-semiconductor capacitors and field-effect transistors2018

    • Author(s)
      J. Liu and Y. Koide
    • Journal Title

      SENSORS

      Volume: 18

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Development of AlN/Diamond heterostructure formation and unique interface property2018

    • Author(s)
      井村将隆,バナルライアン,廖梅勇,松本隆夫,熊本明仁,柴田直哉,幾原雄一,小出康夫
    • Journal Title

      Journal of the Japanese Association for Crystal Growth

      Volume: 45 Issue: 1 Pages: n/a

    • DOI

      10.19009/jjacg.3-45-1-05

    • NAID

      130006727551

    • ISSN
      0385-6275, 2187-8366
    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Logic Circuits With Hydrogenated Diamond Field-Effect Transistors2017

    • Author(s)
      J. Liu, H. Ohsato, M. Liao, M. Imura, E. Watanabe, and Y. Koide
    • Journal Title

      Ieee Electron Device Letters

      Volume: 38 Issue: 7 Pages: 922-925

    • DOI

      10.1109/led.2017.2702744

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator2017

    • Author(s)
      Liu J. W.、Oosato H.、Liao M. Y.、Koide Y.
    • Journal Title

      Applied Physics Letters

      Volume: 110 Issue: 20 Pages: 203502-203502

    • DOI

      10.1063/1.4983091

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Deposition of TiO 2/Al 2O 3bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters2017

    • Author(s)
      J.W. Liu, M.Y. Liao, M. Imura, R.G. Banal, and Y. Koide
    • Journal Title

      Journal of Applied Physics

      Volume: 121 Issue: 22 Pages: 224502-11

    • DOI

      10.1063/1.4985066

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2017

    • Author(s)
      M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
    • Journal Title

      J. Appl. Phys.

      Volume: 121 Issue: 9 Pages: 095703-095703

    • DOI

      10.1063/1.4977201

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2O3 Stack Gate2017

    • Author(s)
      R.G. Banal, M. Imura, H. Ohata, M. Liao, J. Liu, and Y. Koide
    • Journal Title

      Physica Status Solidi A

      Volume: 214 Issue: 11 Pages: 1700463-1700463

    • DOI

      10.1002/pssa.201700463

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel2017

    • Author(s)
      Masataka Imura, Ryan G. Banal, Meiyong Liao, Jiangwei Liu, Takashi Aizawa, Akihiro Tanaka, Hideo Iwai, Takaaki Mano, and Yasuo Koide
    • Journal Title

      J. Appl. Phys.

      Volume: 121 Issue: 2 Pages: 025702-025702

    • DOI

      10.1063/1.4972979

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Design and fabrication of highperformance diamond triple-gate field-effect transistors2016

    • Author(s)
      Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, and Yasuo Koide
    • Journal Title

      Sci. Reprots

      Volume: 6 Issue: 1 Pages: 34757-34757

    • DOI

      10.1038/srep34757

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors2016

    • Author(s)
      Ryan G. Banal, Masataka Imura, Jiangwei Liu, and Yasuo Koide,
    • Journal Title

      J. Appl. Phys.

      Volume: 120 Issue: 11 Pages: 115307-115307

    • DOI

      10.1063/1.4962854

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors2016

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, and Y.Koide
    • Journal Title

      J. Appl. Phys.

      Volume: 120 Issue: 12 Pages: 124504-124504

    • DOI

      10.1063/1.4962851

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Nanometer-thin ALD-Al2O3 for the improvement of structural quality of AlN grown on sapphire substrate by MOVPE2016

    • Author(s)
      Ryan G. Banal, Masataka Imura,1, Daiju Tsuya, Hideo Iwai, and Yasuo Koide
    • Journal Title

      Phys. Status Solidi A

      Volume: 217 Issue: 2 Pages: 1600727-1600727

    • DOI

      10.1002/pssa.201600727

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Presentation] Diamond MOSFETs with a super-high dielectric constant AlOx/TiOx nanolaminate insulator2021

    • Author(s)
      Y. Koide, J. Liu, B. Da, O. Auciello, E. Obaldia
    • Organizer
      CGCT-8, Category 10. Singularity Project,
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Ⅲ族窒化物ナノラミネート特異構造を用いたいたダイヤモンド電子デバイスの開発2021

    • Author(s)
      小出 康夫、劉 江偉、井村 将隆、廖 梅勇
    • Organizer
      2021第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] Science/Technology of Interface-Engineered Super High-K Dielectric TiOx/AlOy Nanolaminate/Crystal Diamond for New Generation High Power Electronics. Second Workshop on Diamond Electronics2020

    • Author(s)
      Orlando Auciello, LIU, Jiangwei, KOIDE, Yasuo, Elida de Obaldia, DA, Bo.
    • Organizer
      Second Workshop on Diamond Electronics 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Diamond Nano-/Micro-Fin Channels for Metal-Oxide-Semiconductor Field-Effect Transistors.2020

    • Author(s)
      LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo.
    • Organizer
      The 13th MANA International Symposium 2020 jointly with ICYS. 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] ワイドギャップ半導体異種接合とデバイス応用2020

    • Author(s)
      小出康夫,井村将隆,劉 江偉,廖 梅勇
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] Advanced diamond FET and MEMS devices2020

    • Author(s)
      Y. Koide
    • Organizer
      2020 Virtual MRS Spring/Fall Meeting & Exhibit
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Challenge to development of III-nitride Nanolaminates/Diamond Heterojunciton devices2020

    • Author(s)
      Y. Koide, M. Imura, J. Liu, and M. Liao
    • Organizer
      Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Science and Technology of Interface-Engineered High-K Dielectric Nanolaminate-Based Oxides / Diamond Films for New Generation High Power Electronics2019

    • Author(s)
      O. Auciello, Elida de Obaldi, Jiangwei Liu, Y. Koide
    • Organizer
      The 13th International Conference on New Diamond and Nano Carbon (NDNC 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Advanced diamond FET and MEMS devices2019

    • Author(s)
      Y. Koide
    • Organizer
      2017 International Symposium on Single Crystal Diamond and Electronics (SCDE2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Future prospect of diamond materials for semiconductor industry in 5G era2019

    • Author(s)
      Y. Koide
    • Organizer
      4th International Carbon Materials Conference & Exposition (CarbonTech 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] High-quality diamond epitaxial layer growth and electron devices application2018

    • Author(s)
      Y. Koide, J.W. Liu, M. Imura, and M.Y. Liao
    • Organizer
      SSDM2018
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Enhancement-mode hydrogenated diamond MOSFETs,“29th International Conference on Diamond and Carbon Materials2018

    • Author(s)
      J. Liu, M. Liao, M. Imura, Y. Koide
    • Organizer
      ICDCM 2018
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Depletion-/enhancement-mode hydrogenated-diamond MOSFETs and MOSFET logic circuits2018

    • Author(s)
      J.W. Liu, Y. Koide
    • Organizer
      4th E-MRS & MRS-J ;Symposium
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Electrical properties of H-terminated diamond FETs with AlN gate2018

    • Author(s)
      Y. Koide, R. G. Banal, M. Imura, J.W. Liu, and M.Y. Liao
    • Organizer
      4th E-MRS & MRS-J, Symposium
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Wide Bandgap III-Nitride and Diamond Devices and Characterization2018

    • Author(s)
      Y. Koide
    • Organizer
      32nd IEEE International Conference on Microelectronic Test Structures, (ICMTS Conference)
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] D/E-mode control of diamond FETs and logic circuit demonstration2017

    • Author(s)
      Y. Koide
    • Organizer
      2017 International Symposium on Single Crystal Diamond and Electronics (2017 SCDE), June 11-12, 2017, Xi'an Jiantong University, (Xi'an, Chaina)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Development of normally-on/off diamond MOSFETs and logic circuits2017

    • Author(s)
      Y. Koide
    • Organizer
      Schulich Symposium, Diamond: From fundamental properties to quantum technologies, Schulich faculty of Chemistry, Technion - Israel Institute of Technology.
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Normally-on/off control of diamond FETs and logic circuit demonstration2017

    • Author(s)
      Y. Koide, J.W. Liu, M. Imura, and M.Y. Liao
    • Organizer
      E-MRS, Symposium O, Diamond for electron devices II, (Warsaw, Poland)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] High-current triple-gate H-diamond MOSFET2017

    • Author(s)
      KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka.
    • Organizer
      New Diamond and Nano Carbon Conference, (NDNC2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Microstructure and hole accumulation mechanism of AlN/Diamond(111) heterojunctions prepared by MOVPE2016

    • Author(s)
      M. Imura, R.G. Banal, M.Y. Liao, J. Liu, Y.Koide , T. Matsumoto, N. Shibata, Y. Ikuhara
    • Organizer
      10th International International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
    • Place of Presentation
      Xi'an, China
    • Year and Date
      2016-09-04
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors2016

    • Author(s)
      R.G. Banal, M. Imura, J. Liu, M. Liao, and Y.Koide
    • Organizer
      International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
    • Place of Presentation
      Montpelier, France
    • Year and Date
      2016-09-04
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Wide Bandgap III-Nitride and Diamond Materials and Devices2016

    • Author(s)
      Y. Koide
    • Organizer
      9th Pacific Rim International Conference on Advanced Materials and Processing (PRICM9)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2016-08-01
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Book] Study of Grain Boundary Character, Chapter 32017

    • Author(s)
      Banal Ryan G.、Imura Masataka、Koide Yasuo
    • Total Pages
      15
    • Publisher
      IntechOpen
    • ISBN
      9789535128625
    • Related Report
      2017 Annual Research Report
  • [Book] Biosensors and Biodetection, Fabrication of Hydrogenated Diamond Metal-Insulator-Semiconductor Field-Effect Transistors2017

    • Author(s)
      Liu Jiangwei、Koide Yasuo
    • Total Pages
      15
    • Publisher
      Springer
    • ISBN
      9781493969104
    • Related Report
      2017 Annual Research Report
  • [Book] Study of Grain Boundary Character, Chapter 32016

    • Author(s)
      Ryan G. Banal, Masataka Imura and Yasuo Koide
    • Publisher
      INTECH open science/open minds
    • Related Report
      2016 Annual Research Report
  • [Remarks] SUMURAI 「小出康夫」

    • URL

      https://samurai.nims.go.jp/profiles/KOIDE_Yasuo/publications?locale=ja#Paper

    • Related Report
      2017 Annual Research Report
  • [Remarks] 小出康夫

    • URL

      http://yankoide.blue.coocan.jp/

    • Related Report
      2017 Annual Research Report
  • [Remarks] 小出康夫|NIMS

    • URL

      http://samurai.nims.go.jp/KOIDE_Yasuo-j.html

    • Related Report
      2016 Annual Research Report

URL: 

Published: 2016-07-04   Modified: 2022-01-27  

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