| Budget Amount *help |
¥80,340,000 (Direct Cost: ¥61,800,000、Indirect Cost: ¥18,540,000)
Fiscal Year 2020: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
Fiscal Year 2019: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
Fiscal Year 2018: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
Fiscal Year 2017: ¥14,040,000 (Direct Cost: ¥10,800,000、Indirect Cost: ¥3,240,000)
Fiscal Year 2016: ¥37,570,000 (Direct Cost: ¥28,900,000、Indirect Cost: ¥8,670,000)
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| Outline of Final Research Achievements |
We have developed an atomic layer deposition (ALD) MOVPE technique and established the ALD method of III-nitride semiconductors by pulsed supply of organometallic compounds and ammonia. Nanolaminate films of [AlN(0.2nm)/GaN(0.04nm)] (250 pairs) were grown, and a 3.6-fold increase in dielectric constant was observed compared to the AlN single film with a same thickness. The result showed for the first time in the world the dielectric constant enhancement of group III nitride semiconductor nanolaminate films. Although the application to diamond FETs could not be achieved, we successfully fabricated and operated the first diamond MOSFET using TiOx[x nm]/AlOx[y nm] (x, y = 1 to 2 nm) nanolaminate films as the gate structure as a result of overseas collaborative research.
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