| Budget Amount *help |
¥60,190,000 (Direct Cost: ¥46,300,000、Indirect Cost: ¥13,890,000)
Fiscal Year 2020: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2019: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2018: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2017: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2016: ¥12,870,000 (Direct Cost: ¥9,900,000、Indirect Cost: ¥2,970,000)
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| Outline of Final Research Achievements |
We aim to realize novel light-emitting devices by utilizing the unique physical properties generated by singularity of the crystal.
AlGaN deep-UV light-emitting diodes (LEDs) were fabricated on the AlN buffer grown on the patterned substrates for the purpose of realizing high light-extraction efficiency, and we obtained single peak emission from the LED. We also fabricated deep-UV laser diode (LD) with a polarization doped p-type cladding layer, and a high current injection operation was obtained assisted by high hole concentration. We improved the performance of terahertz quantum-cascade lasers (THz-QCLs) using inter-subband transition engineering, and realized high output power operation and increasing operating temperature. The room temperature optical gain of the GaN THz-QCL was shown by analysis. A double-metal waveguide GaN-based QCL was fabricated using the Si substrate lift-off process, and the current-voltage characteristics predicted by the analysis were observed.
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