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Interface control of heterojunctions including singularity structures for advanced electron devices

Planned Research

Project AreaMaterials Science and Advanced Elecronics created by singularity
Project/Area Number 16H06421
Research Category

Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionHokkaido University

Principal Investigator

Hashizume Tamotsu  北海道大学, 量子集積エレクトロニクス研究センター, 特任教授 (80149898)

Co-Investigator(Kenkyū-buntansha) 赤澤 正道  北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (30212400)
佐藤 威友  北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (50343009)
Project Period (FY) 2016-06-30 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥59,540,000 (Direct Cost: ¥45,800,000、Indirect Cost: ¥13,740,000)
Fiscal Year 2020: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
Fiscal Year 2019: ¥12,740,000 (Direct Cost: ¥9,800,000、Indirect Cost: ¥2,940,000)
Fiscal Year 2018: ¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
Fiscal Year 2017: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
Fiscal Year 2016: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
KeywordsGaN / AlGaN / 異種接合 / C-V / MOS / 界面準位 / 電気化学エッチング / 界面制御 / CV解析 / 電子準位 / 周期的ナノチャネル / 電子捕獲準位
Outline of Final Research Achievements

We have investigated interface properties of Schottky and MOS structures with a non-polar m-plane GaN surface and processed GaN surfaces by a plasma-assisted etching, an ion implantation and a high-temperature annealing. The detailed electrical characterization detected various kinds of electronic states created at the GaN surfaces. Then, a chemically stable HfSiOx gate with a high permittivity has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs), resulting in excellent I-V characteristics with a slight fluctuation of threshold voltage. In addition, a recess-gate GaN MOS HEMT was fabricated using an electrodeless photo-assisted electrochemical etching. The DC characterization showed a precise control of threshold voltage in the I-V characteristics of the recess-gate MOS HEMT.

Academic Significance and Societal Importance of the Research Achievements

種々のプロセスに曝されたGaN表面には、特有の電子捕獲準位が生成されることが明らかになり、実際のデバイス作製時に導入される電子準位を予見し、その制御指針を立てる上で本研究成果は重要な意味を持つ。また、MOSゲート構造はトランジスタの中枢部であるため、本研究で得られたMOS界面特性の解明、光電気化学プロセスによる精密ゲート制御、MOS型高電子移動度トランジスタの安定動作は、次世代の超高周波増幅システムおよび高効率電力変換システムに対応するGaNトランジスタの研究進展に貢献すると考えられる。

Report

(6 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • Research Products

    (93 results)

All 2021 2020 2019 2018 2017 2016 Other

All Journal Article (30 results) (of which Int'l Joint Research: 9 results,  Peer Reviewed: 30 results,  Open Access: 11 results,  Acknowledgement Compliant: 1 results) Presentation (57 results) (of which Int'l Joint Research: 31 results,  Invited: 18 results) Remarks (5 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Interface characterization of Al2O3/m-plane GaN structure2021

    • Author(s)
      Kaneki Shota、Hashizume Tamotsu
    • Journal Title

      AIP Advances

      Volume: 11 Issue: 1 Pages: 015301-015301

    • DOI

      10.1063/5.0031232

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation2021

    • Author(s)
      Joel T. Asubar, Zenji Yatabe, Dagmar Gregusova, Tamotsu Hashizume
    • Journal Title

      Journal of Applied Physics

      Volume: 129 Issue: 12 Pages: 121102-121102

    • DOI

      10.1063/5.0039564

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor2020

    • Author(s)
      Ochi Ryota、Maeda Erika、Nabatame Toshihide、Shiozaki Koji、Sato Taketomo、Hashizume Tamotsu
    • Journal Title

      AIP Advances

      Volume: 10 Issue: 6 Pages: 065215-065215

    • DOI

      10.1063/5.0012687

    • NAID

      120006869887

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Effects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers2020

    • Author(s)
      Isobe Kazuki、Akazawa Masamichi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: 4 Pages: 046506-046506

    • DOI

      10.35848/1347-4065/ab8024

    • NAID

      120007000858

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Depth profiling of surface damage in n-type GaN induced by inductively coupled plasma reactive ion etching using photo-electrochemical techniques2020

    • Author(s)
      Yamada Shinji、Takeda Kentaro、Toguchi Masachika、Sakurai Hideki、Nakamura Toshiyuki、Suda Jun、Kachi Tetsu、Sato Taketomo
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 10 Pages: 106505-106505

    • DOI

      10.35848/1882-0786/abb787

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing2020

    • Author(s)
      Akazawa Masamichi、Kamoshida Ryo
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: 9 Pages: 096502-096502

    • DOI

      10.35848/1347-4065/abac41

    • NAID

      120007145358

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching2020

    • Author(s)
      S. Yamada, M. Omori, H. Sakurai, Y. Osada, R. Kamimura, T. Hashizume, J. Suda, and T. Kachi
    • Journal Title

      Appl. Phys. Express

      Volume: 13 Issue: 1 Pages: 016505-016505

    • DOI

      10.7567/1882-0786/ab5ffe

    • NAID

      210000157772

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Improved DC performance and current stability of ultrathin-Al2O3/InAlN/GaN MOS-HEMTs with post-metallization-annealing process2020

    • Author(s)
      S. Ozaki, K. Makiyama, T. Ohki, N. Okamoto, Y. Kumazaki, J. Kotani, S. Kaneki, K. Nishiguchi, N. Nakamura, N. Hara, and T. Hashizume
    • Journal Title

      Semicond. Sci. Technol.

      Volume: 35 Issue: 3 Pages: 035027-035027

    • DOI

      10.1088/1361-6641/ab708c

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures2020

    • Author(s)
      2.K. Miwa, Y. Komatsu, M. Toguchi, F. Horikiri, N. Fukuhara, Y. Narita, O. Ichikawa, R. Isono, T. Tanaka, and T. Sato
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 2 Pages: 026508-026508

    • DOI

      10.35848/1882-0786/ab6f28

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Effects of dosage increase on electrical properties of MOS diodes with Mg-ion-implanted GaN before activation annealin2020

    • Author(s)
      M. Akazawa, R. Kamoshida, S. Murai, T. Narita, M. Omori, J. Suda, and T. Kachi
    • Journal Title

      Phys. Status Solidi B

      Volume: 257 Issue: 2

    • DOI

      10.1002/pssb.201900367

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] A time-dependent Verilog-A compact model for MOS capacitors with interface traps2019

    • Author(s)
      K. Fukuda, H. Asai, J. Hattori, M. Shimizu, and T. Hashizume
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SB Pages: SBBD06-SBBD06

    • DOI

      10.7567/1347-4065/aaffbe

    • NAID

      210000135419

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region2019

    • Author(s)
      D. Gregusova, L. Toth, O. Pohorelec, S. Hasenohrl, S. Hascik, I. Cora, Z. Fogarassy, R. Stoklas, A. Seifertova, M. Blaho, A. Laurencikova, T. Oyobiki, B. Pecz, T. Hashizume, and J. Kuzmik
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SC Pages: SCCD21-SCCD21

    • DOI

      10.7567/1347-4065/ab06b8

    • NAID

      210000156114

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect2019

    • Author(s)
      M. Toguchi, K. Miwa, T. Sato
    • Journal Title

      Journal of The Electrochemical Society

      Volume: 166 Issue: 12 Pages: H510-H512

    • DOI

      10.1149/2.0551912jes

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions2019

    • Author(s)
      T. Sato, M. Toguchi, Y. Komatsu, and K. Uemur
    • Journal Title

      IEEE Transactions on Semiconductor Manufacturing

      Volume: 32 Issue: 4 Pages: 483-488

    • DOI

      10.1109/tsm.2019.2934727

    • NAID

      120006783672

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of Low-Temperature Annealing on Defect Levels Generated by Mg-Ion-Implanted GaN2019

    • Author(s)
      M. Akazawa and K. Uetake
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SC Pages: SCCB10-SCCB10

    • DOI

      10.7567/1347-4065/ab09d5

    • NAID

      120006841057

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation2019

    • Author(s)
      M. Akazawa, S. Kitajima, and Y. Kitawaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: 10 Pages: 106504-106504

    • DOI

      10.7567/1347-4065/ab3c49

    • NAID

      120006887714

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures2019

    • Author(s)
      M. Tapajna, J. Drobny, F. Gucmann, K. Husekova, D. Gregussova, T. Hashizume, and J. Kuzmik
    • Journal Title

      Mat. Sci. Semicond. Process.

      Volume: 91 Pages: 356-361

    • DOI

      10.1016/j.mssp.2018.12.012

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors2019

    • Author(s)
      S. Nakazawa, H.-A. Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, T. Kimoto, and T. Hashizume
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: 3 Pages: 030902-030902

    • DOI

      10.7567/1347-4065/aafd17

    • NAID

      210000135371

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates2019

    • Author(s)
      Y. Ando, S. Kaneki and T. Hashizume
    • Journal Title

      Appl. Phys. Express

      Volume: 12 Issue: 2 Pages: 024002-024002

    • DOI

      10.7567/1882-0786/aafded

    • NAID

      210000135597

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps2018

    • Author(s)
      K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 4S Pages: 04FG04-04FG04

    • DOI

      10.7567/jjap.57.04fg04

    • NAID

      210000148929

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] State of the art on gate insulation and surface passivation for GaN-based power HEMTs2018

    • Author(s)
      T. Hashizume, K. Nishiguch, S. Kaneki, J. Kuzmik, Z. Yatabe
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 78 Pages: 85-95

    • DOI

      10.1016/j.mssp.2017.09.028

    • NAID

      120006456416

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Effects of postmetallization annealing on interface properties of Al2O3/GaN structures2018

    • Author(s)
      T. Hashizume, S. Kaneki, T. Oyobiki, Y. Ando, S. Sasaki and K. Nishiguchi
    • Journal Title

      Appl. Phys. Express

      Volume: 11 Issue: 12 Pages: 124102-124102

    • DOI

      10.7567/apex.11.124102

    • NAID

      120006543298

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors2018

    • Author(s)
      M. Matys, K. Nishiguchi, B. Adamowicz, J. Kuzmik and T. Hashizume
    • Journal Title

      J. Appl. Phys.

      Volume: 124 Issue: 22

    • DOI

      10.1063/1.5056194

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN2018

    • Author(s)
      S. Matsumoto, M. Toguchi, K. Takeda, T. Narita, T. Kachi, and T. Sato
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 12 Pages: 121001-121001

    • DOI

      10.7567/jjap.57.121001

    • NAID

      120006764183

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Effects of Air-annealing on DC Characteristics of InAlN/GaN MOS-HEMTs Using ALD-Al2O32017

    • Author(s)
      S. Ozaki, K, Makiyama, T, Ohki, N, Okamoto, S, Kaneki, K, Nishiguchi, N, Hara and T, Hashizume
    • Journal Title

      Appl. Phys. Express

      Volume: 10 Issue: 6 Pages: 061001-061001

    • DOI

      10.7567/apex.10.061001

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process2017

    • Author(s)
      Kumazaki Yusuke、Uemura Keisuke、Sato Taketomo、Hashizume Tamotsu
    • Journal Title

      J. Appl. Phys.

      Volume: 121 Issue: 18 Pages: 184501-184501

    • DOI

      10.1063/1.4983013

    • NAID

      120006463556

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction2017

    • Author(s)
      R. Stoklas, D. Gregusova, M. Blaho, K. Frohlich, J. Novak, M. Matys, Z. Yatabe, P. Kordos, T. Hashizume
    • Journal Title

      Semiconductor Science and Technology

      Volume: 32 Issue: 4 Pages: 045018-045018

    • DOI

      10.1088/1361-6641/aa5fcb

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS-HEMTs2017

    • Author(s)
      K. Nishiguchi, S. Kaneki, S. Ozaki and T. Hashizume
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 56 Issue: 10 Pages: 101001-101001

    • DOI

      10.7567/jjap.56.101001

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors2017

    • Author(s)
      Matys M.、Kaneki S.、Nishiguchi K.、Adamowicz B.、Hashizume T.
    • Journal Title

      J. Appl. Phys.

      Volume: 122 Issue: 22 Pages: 224504-224504

    • DOI

      10.1063/1.5000497

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates2016

    • Author(s)
      S. Kaneki, J. Ohira, S. Toiya, Z. Yatabe, J. T. Asubar and T. Hashizume
    • Journal Title

      Appl. Phys. Lett.

      Volume: 109 Issue: 16

    • DOI

      10.1063/1.4965296

    • NAID

      120006360059

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Presentation] HfSiOx-gate GaN MOS-HEMTs for RF power transistor2021

    • Author(s)
      T. Hashizume, R. Ochi, E. Maeda, T. Nabatame, K. Shiozaki and T. Sato
    • Organizer
      Society of Photographic Instrumentation Engineers (SPIE), Photonics West 2021, Gallium Nitride Materials and Devices XVI
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Interface properties of Al2O3-based MOS structures on m-plane GaN2021

    • Author(s)
      T. Hashizume and S. Kaneki
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Precise control in threshold voltage of AlGaN/GaN HEMTs utilizing a photoelectrochemical (PEC) etching2021

    • Author(s)
      T. Sato, M. Toguchi, K. Itoh, T. Hashizume
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] A Defect Level Generated in GaN by High-Temperature Annealing with AlN Encapsulation2021

    • Author(s)
      M. Akazawa, Y. Tamamura and S. Murai
    • Organizer
      13th International Symposium on Advanced Science and its Appliaction for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology & Science (ISPlasam2021/IC-PLANTS2021)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] HfSiOxゲート AlGaN/GaN HEMTsのDC特性とMOS界面評価2021

    • Author(s)
      越智 亮太、前田 瑛里香、生田目 俊秀、塩崎 宏司、橋詰 保
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 無極性面に形成したGaN MOS界面の特性2021

    • Author(s)
      橋詰 保
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] コンタクトレス光電気化学エッチングによるリセスゲートAlGaN/GaN HEMT の作製2021

    • Author(s)
      渡久地政周,三輪和希,堀切文正,福原昇,成田好伸,吉田丈洋,佐藤威友
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 光電気化学エッチング法を用いたAlGaInN/AlGaNリセスゲートHFETの作製2021

    • Author(s)
      伊藤滉朔,小松裕斗,渡久地政周,井上暁喜,三好実人,佐藤威友
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Photo-Electrochemical Etching and Porosification of III-Nitride Semiconductors2020

    • Author(s)
      T. Sato, and M. Toguchi
    • Organizer
      2020 Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Impact of Cap-Layer Materials Used in Long-Term Low-Temperature Annealing on Electrical Properties of Mg-Ion Implanted GaN2020

    • Author(s)
      M. Akazawa, S. Murai, R. Kamoshida, E. Wu, and T. Kachi
    • Organizer
      62nd Electronic Materials Conference (EMC2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Fabrication of Recessed-Gate AlGaN/GaN HEMTs Utilizing Contactless Photo-Electrochemical (CLPEC) Etching2020

    • Author(s)
      M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, O. Ichikawa, R. Isono, T. Tanaka, and T. Sato
    • Organizer
      2020 Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] HfSiOxゲート AlGaN/GaN MOS-HEMTのゲート制御性2020

    • Author(s)
      越智 亮太、前田 瑛里香、生田目 俊秀、塩崎 宏司、橋詰 保
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Mgイオン注入GaNに対する低温熱処理の効果における表面保護膜材料依存性2020

    • Author(s)
      村井駿太、呉 恩誠,赤澤 正道, 加地 徹
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] MOS interface control for GaN power transistor2019

    • Author(s)
      T. Hashizume
    • Organizer
      Compound Semiconductor Week (CSW2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Interface control of Al2O3-based MOS structures for advanced GaN transistors2019

    • Author(s)
      T. Hashizume and T. Sato
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Improved Al2O3 gate technology for high-power and high-frequency GaN transistors2019

    • Author(s)
      T. Hashizume
    • Organizer
      International Conference on Silicon Carbide and Related Materials (ICSCRM2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Stable C-V characteristics of Al2O3/m-plane GaN structures at high temperatures2019

    • Author(s)
      S. Kaneki and T. Hashizume
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Improved gate controllability of Al2O3-gate AlGaN/GaN HEMTs grown on GaN substrates2019

    • Author(s)
      R. Ochi, Y. Ando, S. Kaneki and T. Hashizume
    • Organizer
      13th Topical Workshop on Heterostructure Microelectronics (TWHM-2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Damage-less Wet Etching for Normally-off AlGaN/GaN HEMTs using Photo-electrochemical Reactions2019

    • Author(s)
      T. Sato, K. Uemura, and M. Toguchi
    • Organizer
      2019 International Conference on Compound Semiconductor Manufacturing Technology
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] GaN Wet Etching Process for Power and RF Devices2019

    • Author(s)
      F. Horikiri, N. Fukuhara, H. Ohta, N. Asai, Y. Narita, T. Yoshida, T. Mishima, M. Toguchi, K. Miwa, and T. Sato
    • Organizer
      2019 International Conference on Solid State Devices and Materials
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Insulated gate technologies for advanced GaN MOS transistors2019

    • Author(s)
      T. Hashizume
    • Organizer
      11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma-2019)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] GaN MOSFETの絶縁ゲート技術2019

    • Author(s)
      橋詰保
    • Organizer
      応用物理学会第24回電子デバイス界面テクノロジー研究会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] GaN自立基板上に作製したAl2O3/AlGaN/GaN HEMTの評価2019

    • Author(s)
      金木 奨太、安藤 祐次、橋詰 保
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Control of SiO2/InAlN Interface by Plasma Surface Oxidation2019

    • Author(s)
      S. Kitajima and M. Akazawa
    • Organizer
      11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma-2019)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] p-GaNに形成したショットキーおよびMOS接合の評価2018

    • Author(s)
      橋詰保
    • Organizer
      応用物理学会第149回結晶工学分科会研究会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] GaN系トランジスタにおける界面制御2018

    • Author(s)
      橋詰保
    • Organizer
      応用物理学会先進パワー半導体分科会第4回個別討論会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Nature of oxide/III-N defects: Disorder induced gap state continuum vs. border traps2018

    • Author(s)
      M. Matys, K. Nishiguchi, B. Adamowicz and T. Hashizume
    • Organizer
      34th International Conference on the Semiconductor Physics (ICPS-2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Control of Al2O3 MOS Interfaces Fabricated on m-plane GaN Surfaces2018

    • Author(s)
      S. Kaneki and T. Hashizume
    • Organizer
      International Workshop on Nitride Semiconductors (IWN-2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Gate controllability in Al2O3-gate AlGaN/GaN HEMTs grown on GaN substrates2018

    • Author(s)
      Y. Ando, S. Kaneki, and T. Hashizume
    • Organizer
      International Workshop on Nitride Semiconductors (IWN-2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characterization of Al2O3 MOS structures fabricated on high-temperature annealed GaN surfaces2018

    • Author(s)
      T. Oyobiki and T. Hashizume
    • Organizer
      International Workshop on Nitride Semiconductors (IWN-2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Investigation of Effect of Low-Temperature Annealing and Dosage on Mg-Ion- Implanted GaN Using MOS Structure2018

    • Author(s)
      K. Uetake, R. Kamoshida, and M. Akazawa
    • Organizer
      International Workshop on Nitride Semiconductors (IWN-2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors2018

    • Author(s)
      M. Matys, K. Nishiguchi, B. Adamowicz, J. Kuzmik, and T. Hashizume
    • Organizer
      International Workshop on Nitride Semiconductors (IWN-2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 高温アニール後のGaN表面に形成したAl2O3 MOS構造の評価2018

    • Author(s)
      及木 達矢、橋詰 保
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] m面GaNに形成したAl2O3 MOS構造の評価2018

    • Author(s)
      金木 奨太、橋詰 保
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] GaN基板上に作製したAl2O3/AlGaN/GaN MOS HEMT のゲート制御性2018

    • Author(s)
      安藤 祐次、金木 奨太、橋詰 保
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 高温アニールがAl2O3/GaN 界面特性に及ぼす影響2018

    • Author(s)
      及木 達矢、橋詰 保
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Al2O3-gate AlGaN/GaN MOS HEMTの動作安定性2018

    • Author(s)
      安藤 祐次、金木 奨太、西口 賢弥、橋詰 保
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] GaN MOS-HEMTの制御性および安定性の向上2017

    • Author(s)
      金木将太、西口賢弥、橋詰保
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] GaNキャップ層がAlGaN/GaN MOS構造のC-V特性に与える影響2017

    • Author(s)
      西口賢弥、橋詰保
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] Improved wet-etching processes for GaN-based electron devices2017

    • Author(s)
      T. Sato, K. Uemura and T. Hashizume
    • Organizer
      2017 Materials Research Society Fall Meeting
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] GaN系半導体のMOS界面制御2017

    • Author(s)
      橋詰保
    • Organizer
      日本学術振興会第162委員会第103回研究会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] GaN系トランジスタにおける界面制御2017

    • Author(s)
      橋詰保
    • Organizer
      応用物理学会応用電子物性分科会研究会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] GaN MIS界面とトランジスタ応用~これまでのⅢ-V MIS界面と違いはあるのか~2017

    • Author(s)
      橋詰保
    • Organizer
      日本結晶成長学会・ナノ構造・エピタキシャル成長分科会・第9回講演会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] Improved MOS gate control in Al2O3/AlGaN/GaN HEMTs with reverse-bias annealing2017

    • Author(s)
      Kenya Nishiguchi, Syota Kaneki, Tamotsu Hashizume
    • Organizer
      12th International Conference on Nitride Semiconductors (ICNS-12)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Precise thickness control in recess-etching for normally-off AlGaN/GaN HEMTs using a low damage photo-electrochemical reaction2017

    • Author(s)
      Taketomo Sato, Keisuke Uemura, Yusuke Kumazaki, Tamotsu Hashizume
    • Organizer
      12th International Conference on Nitride Semiconductors (ICNS-12)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Correlation between VTH instability and interface states in Al2O3/AlGaN/GaN Structures2017

    • Author(s)
      Shota Kaneki, Zenji Yatabe, Tamotsu Hashizume
    • Organizer
      12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Analysis of temperature dependent frequency dispersion in C-V curves of Al2O3/AlGaN/GaN structures based on the disorder-induced gap-state model2017

    • Author(s)
      M. Matys, S.Kaneki, B. Adamowicz, J. Kuzmik and T. Hashizume
    • Organizer
      12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Transient-mode simulation of MOS C-V characteristics for GaN2017

    • Author(s)
      Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu and Tamotsu Hashizume
    • Organizer
      2017 International Conference on Solid-State Devices and Materials (SSDM2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Fast Switching Performance by 20 A/730 V AlGaN/GaN MIS-HFET Using AlON Gate Insulator2017

    • Author(s)
      S. Nakazawa, H.-A. Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, M. Nozaki, T. Yamada, T. Hosoi, T. Shimura, H. Watanabe, and T. Hashizume
    • Organizer
      63rd. International Electron devices Meeting (IEDM-2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Al2O3/GaN 構造の界面制御プロセス2017

    • Author(s)
      金木 奨太、西口 賢弥、橋詰 保
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] MOS構造によるGaN表面のICPエッチング誘起欠陥の評価2017

    • Author(s)
      及木 達矢、西口 賢弥、山田 真嗣、桜井 秀樹、上村 隆一郎、長田 大和、加地 徹、橋詰 保
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 光電気化学反応を利用したn-GaN表面層の低損傷エッチング2017

    • Author(s)
      松本 悟、佐藤 威友、成田 哲生、加地 徹、橋詰 保
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 光電気化学(PEC)反応を利用したリセスゲートAlGaN/GaN HEMTの作製2017

    • Author(s)
      植村 圭佑、佐藤 威友、橋詰 保
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Surface passivation structures for GaN power transistors2016

    • Author(s)
      T. Hashizume
    • Organizer
      Advanced Metallization Conference 2016 (ADMETA-2016)
    • Place of Presentation
      東京大学
    • Year and Date
      2016-10-20
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al2O3/AlGaN/GaN Structures2016

    • Author(s)
      Z. Yatabe, J.T. Asubar, Y. Nakamura, T. Hashizume
    • Organizer
      2016 International Conference on Solid-State Devices and Materials (SSDM2016)
    • Place of Presentation
      Tsukuba International Congress Center
    • Year and Date
      2016-09-26
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] GaN系トランジスタにおける界面制御2016

    • Author(s)
      橋詰保
    • Organizer
      第77回応用物理学会秋季学術講演会シンポジウム
    • Place of Presentation
      新潟朱鷺メッセ
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] Al2O3/AlGaN/GaN MOSHEMT の界面制御プロセス2016

    • Author(s)
      金木将太、西口賢弥、橋詰保
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      新潟朱鷺メッセ
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Remarks] 北海道大学量子集積エレクトロニクス研究センター

    • Related Report
      2020 Annual Research Report
  • [Remarks] 北海道大学量子集積エレクトロニクス研究センター

    • Related Report
      2019 Annual Research Report
  • [Remarks] 北海道大学量子集積エレクトロニクス研究センター

    • Related Report
      2018 Annual Research Report
  • [Remarks] 北海道大学量子集積エレクトロニクス研究センター

    • Related Report
      2017 Annual Research Report
  • [Remarks] 北海道大学量子集積エレクトロニクス研究センター

    • Related Report
      2016 Annual Research Report
  • [Patent(Industrial Property Rights)] 構造体の製造方法と製造装置および中間構造体2019

    • Inventor(s)
      堀切文正,福原昇,佐藤威友,渡久地政周
    • Industrial Property Rights Holder
      堀切文正,福原昇,佐藤威友,渡久地政周
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Acquisition Date
      2020
    • Related Report
      2020 Annual Research Report

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Published: 2016-07-04   Modified: 2022-01-27  

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