| Budget Amount *help |
¥60,580,000 (Direct Cost: ¥46,600,000、Indirect Cost: ¥13,980,000)
Fiscal Year 2020: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
Fiscal Year 2019: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
Fiscal Year 2018: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2017: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2016: ¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
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| Outline of Final Research Achievements |
Multi-scale structural analysis and evaluation were performed on crystals and devices of nitride and group IV semiconductors, focusing on the singular structures such as dislocations and nano-voids. The lattice structure was three-dimensionally analyzed with high spatial resolution by using synchrotron radiation nanobeam X-ray diffraction, and the crystallographic effect induced by the singular structure in the buffer layer and the template thick film was clarified. Various microscopy observations clearly revealed the influence of the singularity structure on the current leakage phenomenon related to dislocations and the lattice deformation behavior caused by the piezoelectricity proper to nitride semiconductors. Furthermore, we succeeded in time-resolved analysis of lattice deformation behaviors caused by the inverse piezoelectric effect in the nitride semiconductor device using in-situ X-ray diffraction, and clarified the nanosecond-order dynamics of the singular structure.
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