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Study of trapping/scattering dynamics of carriers in crystal singularity by means of positron annihilation

Planned Research

Project AreaMaterials Science and Advanced Elecronics created by singularity
Project/Area Number 16H06424
Research Category

Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionUniversity of Tsukuba

Principal Investigator

Uedono Akira  筑波大学, 数理物質系, 教授 (20213374)

Co-Investigator(Kenkyū-buntansha) 大島 永康  国立研究開発法人産業技術総合研究所, 計量標準総合センター, 研究グループ長 (00391889)
角谷 正友  国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主席研究員 (20293607)
石橋 章司  国立研究開発法人産業技術総合研究所, 材料・化学領域, 上級主任研究員 (30356448)
奥村 宏典  筑波大学, 数理物質系, 助教 (80756750)
Project Period (FY) 2016-06-30 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥50,700,000 (Direct Cost: ¥39,000,000、Indirect Cost: ¥11,700,000)
Fiscal Year 2020: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2019: ¥13,520,000 (Direct Cost: ¥10,400,000、Indirect Cost: ¥3,120,000)
Fiscal Year 2018: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
Fiscal Year 2017: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
Fiscal Year 2016: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
Keywords結晶 / 点欠陥 / 空孔型欠陥 / 陽電子消滅 / 陽電子消滅シミュレーション / 光熱偏向分光法 / 結晶欠陥 / 光学特性 / 電気的特性 / 結晶特異構造 / キャリア捕獲 / 超格子構造 / 室温PL発光寿命 / 理論計算 / 0次元欠陥 / 陽電子 / X線回折 / 光熱偏光分光法 / 欠陥 / キャリア / 捕獲 / イオン注入 / 長周期InGaN/GaN超格子構造 / 格子欠陥 / 結晶成長 / 結晶工学
Outline of Final Research Achievements

The purpose of the singularity-structure project is project is to extend crystal science by studying crystal singularity-structures. The purpose of this project is to obtain knowledge of optical and electrical properties of 0D-singularity-structures using positron annihilation, and to contribute to the construction of extended crystallography. Through this project, we have accumulated the know-how to evaluate vacancy-type defects even when using a positron beam with a diameter larger than the size of the singularity-structure. We also succeeded in focusing the positron beam diameter to several hundred micrometers using a high intensity positron beam. In addition, we have demonstrated the effectiveness of photothermal deflection spectroscopy, which enables us to characterize the optical and electrical properties of 0D-singularity-structures by using positron annihilation, photothermal deflection spectroscopy, and emission spectrum analysis.

Academic Significance and Societal Importance of the Research Achievements

本計画研究により、0次特異構造の特性を評価できるようになった。また、陽電子消滅シミュレーションの発達により、新規材料を評価する場合の困難さも低減された。これらの成果により、今後も拡張結晶学の進展に寄与できると考えられる。また、得られた知見を用いて、従来は使用することが難しかったAlNやGa2O3を用いたデバイスを作製、動作させることに成功した。本研究で開発された装置の一部は共用化が行われており、空孔型欠陥の評価に広く使用できるようになっている。また、研究代表者が設置したスタートアップによっても装置群にアクセスすることができ、一般の研究者に対しても寄与できる体制を整えた。

Report

(6 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • Research Products

    (171 results)

All 2021 2020 2019 2018 2017 2016 Other

All Int'l Joint Research (15 results) Journal Article (55 results) (of which Int'l Joint Research: 19 results,  Peer Reviewed: 54 results,  Open Access: 7 results) Presentation (100 results) (of which Int'l Joint Research: 45 results,  Invited: 27 results) Book (1 results)

  • [Int'l Joint Research] TUM/UniBwM(ドイツ)

    • Related Report
      2020 Annual Research Report
  • [Int'l Joint Research] IMEC(ベルギー)

    • Related Report
      2020 Annual Research Report
  • [Int'l Joint Research] UNIPRESS(ポーランド)

    • Related Report
      2020 Annual Research Report
  • [Int'l Joint Research] Wuhan Univ.(中国)

    • Related Report
      2020 Annual Research Report
  • [Int'l Joint Research] MIT(米国)

    • Related Report
      2020 Annual Research Report
  • [Int'l Joint Research] TUM FRM2/HZDR/UniBwM(ドイツ)

    • Related Report
      2019 Annual Research Report
  • [Int'l Joint Research] CNRS(フランス)

    • Related Report
      2019 Annual Research Report
  • [Int'l Joint Research] MIT(米国)

    • Related Report
      2019 Annual Research Report
  • [Int'l Joint Research] ミュンヘン工科大学/ハレ大学/HZDR(ドイツ)

    • Related Report
      2018 Annual Research Report
  • [Int'l Joint Research] グルノーブルアルプス大学/CEA/LETI(フランス)

    • Related Report
      2018 Annual Research Report
  • [Int'l Joint Research] アールト大学(フィンランド)

    • Related Report
      2018 Annual Research Report
  • [Int'l Joint Research] MIT(米国)

    • Related Report
      2018 Annual Research Report
  • [Int'l Joint Research] Technische Universitat Munchen/Universitat der Bundeswehr Muchen(ドイツ)

    • Related Report
      2017 Annual Research Report
  • [Int'l Joint Research] MIT(米国)

    • Related Report
      2017 Annual Research Report
  • [Int'l Joint Research] Aalto Univ.(フィンランド)

    • Related Report
      2017 Annual Research Report
  • [Journal Article] Slow Positron Beam Analysis for Functional Membranes Under Atmosphereic Environment2021

    • Author(s)
      大島永康
    • Journal Title

      Journal of The Society of Instrument and Control Engineers

      Volume: 60 Issue: 3 Pages: 187-191

    • DOI

      10.11499/sicejl.60.187

    • NAID

      130007999980

    • ISSN
      0453-4662, 1883-8170
    • Year and Date
      2021-03-10
    • Related Report
      2020 Annual Research Report
  • [Journal Article] Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam2020

    • Author(s)
      Akazawa Masamichi、Kamoshida Ryo、Murai Shunta、Kachi Tetsu、Uedono Akira
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Issue: 1 Pages: 016502-016502

    • DOI

      10.35848/1347-4065/abcf08

    • NAID

      120007181819

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Dynamic observation and theoretical analysis of initial O2 molecule adsorption on polar and m-plane surfaces of GaN2020

    • Author(s)
      M. Sumiya, M. Sumita, Y. Asai, R. Tamura, A. Uedono, A. Yoshigoe
    • Journal Title

      The Journal of Physical Chemistry C

      Volume: 124 Issue: 46 Pages: 25282-25290

    • DOI

      10.1021/acs.jpcc.0c07151

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam2020

    • Author(s)
      Uedono Akira、Sakurai Hideki、Narita Tetsuo、Sierakowski Kacper、Bockowski Michal、Suda Jun、Ishibashi Shoji、Chichibu Shigefusa F.、Kachi Tetsu
    • Journal Title

      Scientific Reports

      Volume: 10 Issue: 1 Pages: 17349-17349

    • DOI

      10.1038/s41598-020-74362-9

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Morphological characterization and mechanical behavior by dicing and thinning on direct bonded Si wafer2020

    • Author(s)
      Inoue Fumihiro、Podpod Arnita、Peng Lan、Phommahaxay Alain、Rebibis Kenneth June、Uedono Akira、Beyne Eric
    • Journal Title

      Journal of Manufacturing Processes

      Volume: 58 Pages: 811-818

    • DOI

      10.1016/j.jmapro.2020.08.050

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams2020

    • Author(s)
      Akira Uedono, Kanako Shojiki, Kenjiro Uesugi, Shigefusa F Chichibu, Shoji Ishibashi, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, Hideto Miyake
    • Journal Title

      J. Appl. Phys.

      Volume: 128 Issue: 8 Pages: 085704-085704

    • DOI

      10.1063/5.0015225

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Pore structure analysis of ionic liquid-templated porous silica using positron annihilation lifetime spectroscopy2020

    • Author(s)
      Sagara Akihiko、Yabe Hiroki、Chen X.、Vereecken Philippe M.、Uedono Akira
    • Journal Title

      Microporous and Mesoporous Materials

      Volume: 295 Pages: 109964-109964

    • DOI

      10.1016/j.micromeso.2019.109964

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Selective trapping of positrons by Ag nanolayers in a V/Ag multilayer system2020

    • Author(s)
      Qi N、Zhang X.、Chen Z. Q.、Ren F.、Zhao B.、M. Jiang M.、 Uedono A.
    • Journal Title

      AIP Adv.

      Volume: 10 Pages: 035012-035012

    • NAID

      120007183436

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Magnetic properties of metastable bcc phase in Fe64Ni36 alloy synthesized through polyol process2020

    • Author(s)
      Jacob G. Antilen、Sellaiyan S.、Uedono A.、Joseyphus R. Justin
    • Journal Title

      Applied Physics A

      Volume: 126 Issue: 2 Pages: 120-120

    • DOI

      10.1007/s00339-020-3292-3

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Growth of high-quality GaN by halogen-free vapor phase epitaxy2020

    • Author(s)
      Kimura Taishi、Kataoka Keita、Uedono Akira、Amano Hiroshi、Nakamura Daisuke
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 8 Pages: 085509-085509

    • DOI

      10.35848/1882-0786/aba494

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Hole capture-coefficient of intrinsic nonradiative recombination centers that commonly exist in bulk, epitaial, and proton-irradiated ZnO2020

    • Author(s)
      Shigefusa F. Chichibu, Akira Uedono, Kazunobu Kojima, Kazuto Koike, Mitsuaki Yano, Shun-ichi Gonda, Shoji Ishibashi
    • Journal Title

      Journal of Applied Physics

      Volume: 127 Issue: 21 Pages: 215704-215704

    • DOI

      10.1063/5.0011309

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy2020

    • Author(s)
      Okumura Hironori
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: 7 Pages: 075503-075503

    • DOI

      10.35848/1347-4065/ab9a8b

    • NAID

      120007169672

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of thin MOCVD-grown GaN layer on underlying AlN template2020

    • Author(s)
      Sumiya Masatomo、Fukuda Kiyotaka、Yasiro Shuhei、Honda Tohru
    • Journal Title

      Journal of Crystal Growth

      Volume: 532 Pages: 125376-125376

    • DOI

      10.1016/j.jcrysgro.2019.125376

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Evaluation Methodology of Diffusion Coefficient of Guest Substances Associated with Angstrom-Scale Open Spaces in Materials by Slow Positron Beam2020

    • Author(s)
      Kiminori Sato and Nagayasu Oshima
    • Journal Title

      Review of Scientific Instrument

      Volume: 91 Issue: 8 Pages: 0839071-0839075

    • DOI

      10.1063/5.0012254

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire2020

    • Author(s)
      Sumiya Masatomo、Kindole Dickson、Fukuda Kiyotaka、Yashiro Shuhei、Takehana Kanji、Honda Tohru、Imanaka Yasutaka
    • Journal Title

      physica status solidi (b)

      Volume: 257 Issue: 4 Pages: 1900524-1900524

    • DOI

      10.1002/pssb.201900524

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Simple way of finding Ba to Si deposition rate ratios for high photoresponsivity in BaSi2 films by Raman spectroscopy2019

    • Author(s)
      Yamashita Yudai、Takahara Yuuki、Sato Takuma、Toko Kaoru、Uedono Akira、Suemasu Takashi
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 5 Pages: 055506-055506

    • DOI

      10.7567/1882-0786/ab14b9

    • NAID

      120007127924

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Characterization of the distribution of defects introduced by plasma exposure in Si substrate2019

    • Author(s)
      Sato Yoshihiro、Shibata Satoshi、Uedono Akira、Urabe Keiichiro、Eriguchi Koji
    • Journal Title

      Journal of Vacuum Science & Technology A

      Volume: 37 Issue: 1 Pages: 011304-011304

    • DOI

      10.1116/1.5048027

    • Related Report
      2019 Annual Research Report 2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of defects on the electrical properties of p-n diodes formed by implanting Mg and H ions into N-polar GaN2019

    • Author(s)
      H. Iguchi, T. Narita, K. Kataoka, M. Kanechika, and A. Uedono
    • Journal Title

      Journal of Applied Physics

      Volume: 126 Issue: 12 Pages: 125102-125102

    • DOI

      10.1063/1.5116886

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams2019

    • Author(s)
      Uedono Akira、Iguchi Hiroko、Narita Tetsuo、Kataoka Keita、Egger Werner、Koschine T?njes、Hugenschmidt Christoph、Dickmann Marcel、Shima Kohei、Kojima Kazunobu、Chichibu Shigefusa F.、Ishibashi Shoji
    • Journal Title

      physica status solidi (b)

      Volume: 256 Issue: 10 Pages: 1900104-1900104

    • DOI

      10.1002/pssb.201900104

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures2019

    • Author(s)
      Chichibu Shigefusa F.、Shima Kohei、Kojima Kazunobu、Takashima Shin-ya、Ueno Katsunori、Edo Masaharu、Iguchi Hiroko、Narita Tetsuo、Kataoka Keita、Ishibashi Shoji、Uedono Akira
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SC Pages: SC0802-SC0802

    • DOI

      10.7567/1347-4065/ab0d06

    • NAID

      210000156122

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam2019

    • Author(s)
      Uedono Akira、Siladie Alexandra-Madalina、Pernot Julien、Daudin Bruno、Ishibashi Shoji
    • Journal Title

      Journal of Applied Physics

      Volume: 125 Issue: 17 Pages: 175705-175705

    • DOI

      10.1063/1.5088653

    • NAID

      120007133415

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy2019

    • Author(s)
      Sumiya M.、Fukuda K.、Takashima S.、Ueda S.、Onuma T.、Yamaguchi T.、Honda T.、Uedono A.
    • Journal Title

      Journal of Crystal Growth

      Volume: 511 Pages: 15-18

    • DOI

      10.1016/j.jcrysgro.2019.01.021

    • Related Report
      2019 Annual Research Report 2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of dopant concentration and annealing of Yttrium doped CuO nanocrystallites studied by positron annihilation spectroscopy2019

    • Author(s)
      Sellaiyan S.、Vimala Devi L.、Sako K.、Uedono A.、Sivaji K.
    • Journal Title

      Journal of Alloys and Compounds

      Volume: 788 Pages: 549-558

    • DOI

      10.1016/j.jallcom.2019.02.247

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE2019

    • Author(s)
      Yamazaki A.、Naramoto H.、Sasa K.、Ishii S.、Tomita S.、Sataka M.、Kudo H.、Ohkubo M.、Uedono A.
    • Journal Title

      Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

      Volume: 450 Pages: 319-322

    • DOI

      10.1016/j.nimb.2018.10.015

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys2019

    • Author(s)
      Ishibashi Shoji、Uedono Akira、Kino Hiori、Miyake Takashi、Terakura Kiyoyuki
    • Journal Title

      Journal of Physics: Condensed Matter

      Volume: 31 Issue: 47 Pages: 475401-475401

    • DOI

      10.1088/1361-648x/ab35a4

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm2019

    • Author(s)
      Lemettinen Jori、Chowdhury Nadim、Okumura Hironori、Kim Iurii、Suihkonen Sami、Palacios Tomas
    • Journal Title

      IEEE Electron Device Letters

      Volume: 40 Issue: 8 Pages: 1245-1248

    • DOI

      10.1109/led.2019.2923902

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination2019

    • Author(s)
      Okumura Hironori、Tanaka Taketoshi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 12 Pages: 120902-120902

    • DOI

      10.7567/1347-4065/ab4f90

    • NAID

      120007132688

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Growth of InGaN films on hardness-controlled bulk GaN substrates2019

    • Author(s)
      Sumiya Masatomo、Fukuda Kiyotaka、Fujikura Hajime、Konno Taichiro、Suzuki Takayuki、Fujimoto Tetsuji、Yoshida Takehiro、Ueda Shigenori、Watanabe Kenji、Ohnishi Tsuyoshi、Honda Tohru
    • Journal Title

      Applied Physics Letters

      Volume: 115 Issue: 17 Pages: 172102-172102

    • DOI

      10.1063/1.5110224

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template2019

    • Author(s)
      Matsuura Haruka、Onuma Takeyoshi、Sumiya Masatomo、Yamaguchi Tomohiro、Ren Bing、Liao Meiyong、Honda Tohru、Sang Liwen
    • Journal Title

      Applied Sciences

      Volume: 9 Issue: 9 Pages: 1746-1746

    • DOI

      10.3390/app9091746

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Terahertz Cyclotron Resonance in AlGaN/GaN Heterostructures2019

    • Author(s)
      Kindole Dickson、Imanaka Yasutaka、Takehana Kanji、Sang Liwen、Sumiya Masatomo
    • Journal Title

      Journal of the Korean Physical Society

      Volume: 74 Issue: 2 Pages: 159-163

    • DOI

      10.3938/jkps.74.159

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)2019

    • Author(s)
      Okumura Hironori、Kato Yuji、Oshima Takayoshi、Palacios Tomas
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SB Pages: SBBD12-SBBD12

    • DOI

      10.7567/1347-4065/ab002b

    • NAID

      210000135426

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution2019

    • Author(s)
      Okumura Hironori
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 2 Pages: 026502-026502

    • DOI

      10.7567/1347-4065/aaf78b

    • NAID

      210000135293

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films2018

    • Author(s)
      Iwashita Shinya、Denpoh Kazuki、Kagaya Munehito、Kikuchi Takamichi、Noro Naotaka、Hasegawa Toshio、Moriya Tsuyoshi、Uedono Akira
    • Journal Title

      Thin Solid Films

      Volume: 660 Pages: 865-870

    • DOI

      10.1016/j.tsf.2018.03.001

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Positron Annihilation Studies on Chemically Synthesized FeCo Alloy2018

    • Author(s)
      Rajesh P.、Sellaiyan S.、Uedono A.、Arun T.、Joseyphus R. Justin
    • Journal Title

      Scientific Reports

      Volume: 8 Issue: 1

    • DOI

      10.1038/s41598-018-27949-2

    • NAID

      120007134015

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN2018

    • Author(s)
      Chichibu S. F.、Uedono A.、Kojima K.、Ikeda H.、Fujito K.、Takashima S.、Edo M.、Ueno K.、Ishibashi S.
    • Journal Title

      Journal of Applied Physics

      Volume: 123 Issue: 16 Pages: 161413-161413

    • DOI

      10.1063/1.5012994

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Polarity-Dependence of the Defect Formation in C-axis Oriented ZnO by the Irradiation of an 8 MeV Proton Beam2018

    • Author(s)
      K. Koike, M. Yano, S. Gonda, A. Uedono, S. Ishibashi, K. Kojima, S. F. Chichibu
    • Journal Title

      Journal of Applied Physics

      Volume: 123 Issue: 16 Pages: 161562-161562

    • DOI

      10.1063/1.5010704

    • NAID

      120007133775

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams2018

    • Author(s)
      Uedono Akira、Nabatame Toshihide、Egger Werner、Koschine T?njes、Hugenschmidt Christoph、Dickmann Marcel、Sumiya Masatomo、Ishibashi Shoji
    • Journal Title

      Journal of Applied Physics

      Volume: 123 Issue: 15 Pages: 155302-155302

    • DOI

      10.1063/1.5026831

    • NAID

      120007133778

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition2018

    • Author(s)
      Iwashita Shinya、Moriya Tsuyoshi、Kikuchi Takamichi、Kagaya Munehito、Noro Naotaka、Hasegawa Toshio、Uedono Akira
    • Journal Title

      Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

      Volume: 36 Issue: 2 Pages: 021515-021515

    • DOI

      10.1116/1.5001552

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] AlN metal-semiconductor field-effect transistors using Si-ion implantation2018

    • Author(s)
      H. Okumura、S. Suihkonen、J. Lemettinen、A. Uedono、Y. Zhang、D. Piedra、T. Palacios
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Issue: 4S Pages: 04FR11-04FR11

    • DOI

      10.7567/jjap.57.04fr11

    • NAID

      210000149017

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Room-temperature photoluminescence lifetime for the near-band-edge emission of (000-1) p-type GaN fabricated by sequential ion-implantation of Mg and H2018

    • Author(s)
      Shima K.、Iguchi H.、Narita T.、Kataoka K.、Kojima K.、Uedono A.、Chichibu S. F.
    • Journal Title

      Applied Physics Letters

      Volume: 113 Issue: 19 Pages: 191901-191901

    • DOI

      10.1063/1.5050967

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate2018

    • Author(s)
      Chichibu S. F.、Shima K.、Kojima K.、Takashima S.、Edo M.、Ueno K.、Ishibashi S.、Uedono A.
    • Journal Title

      Applied Physics Letters

      Volume: 112 Issue: 21 Pages: 211901-211901

    • DOI

      10.1063/1.5030645

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams2018

    • Author(s)
      Uedono Akira、Yamada Takahiro、Hosoi Takuji、Egger Werner、Koschine Toenjes、Hugenschmidt Christoph、Dickmann Marcel、Watanabe Heiji
    • Journal Title

      Applied Physics Letters

      Volume: 112 Issue: 18 Pages: 182103-182103

    • DOI

      10.1063/1.5027257

    • NAID

      120007133766

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Valence band edge tail states and band gap defect levels of GaN bulk and InxGa1-xN films detected by hard X-ray photoemission and photothermal deflection spectroscopy2018

    • Author(s)
      M. Sumiya, S. Ueda, K. Fukuda, Y. Asai, Y. Cho, L. Sang, A. Uedono, T. Sekiguchi, T. Onuma, and T. Honda
    • Journal Title

      APEX

      Volume: 11 Issue: 2 Pages: 021002-021002

    • DOI

      10.7567/apex.11.021002

    • NAID

      210000136099

    • Related Report
      2018 Annual Research Report 2017 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] 陽電子消滅による空孔型欠陥の評価2018

    • Author(s)
      1.上殿明良
    • Journal Title

      New Diamond

      Volume: 34 Pages: 49-52

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural evaluation of ions-implanted GaN films by photothermal deflection spectroscopy2018

    • Author(s)
      Sumiya Masatomo、Fukuda Kiyotaka、Iwai Hideo、Yamaguchi Tomohiro、Onuma Takeyoshi、Honda Tohru
    • Journal Title

      AIP Advances

      Volume: 8 Issue: 11 Pages: 115225-115225

    • DOI

      10.1063/1.5052493

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality2018

    • Author(s)
      J. Lemettinen、H. Okumura、I. Kim、C. Kauppinen、T. Palacios、S. Suihkonen
    • Journal Title

      Journal of Crystal Growth

      Volume: 487 Pages: 12-16

    • DOI

      10.1016/j.jcrysgro.2018.02.013

    • Related Report
      2018 Annual Research Report 2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC2018

    • Author(s)
      J. Lemettinen、H. Okumura、I. Kim、M. Rudzinski、J. Grzonka、T. Palacios、S. Suihkonen
    • Journal Title

      Journal of Crystal Growth

      Volume: 487 Pages: 50-56

    • DOI

      10.1016/j.jcrysgro.2018.02.020

    • Related Report
      2018 Annual Research Report 2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Transport of small and neutral solutes through reverse osmosis membranes: Role of skin layer conformation of the polyamide film2018

    • Author(s)
      Fujioka Takahiro、O'Rourke Brian E.、Michishio Koji、Kobayashi Yoshinori、Oshima Nagayasu、Kodamatani Hitoshi、Shintani Takuji、Nghiem Long D.
    • Journal Title

      Journal of Membrane Science

      Volume: 554 Pages: 301-308

    • DOI

      10.1016/j.memsci.2018.02.069

    • NAID

      120006988024

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] N-polar AlN buffer growth by metal organic vapor phase epitaxy for transistor applications2018

    • Author(s)
      Lemettinen Jori、Okumura Hironori、Palacios Tomas、Suihkonen Sami
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 10 Pages: 101002-101002

    • DOI

      10.7567/apex.11.101002

    • NAID

      210000136358

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Determination of the transition point from electron accumulation to depletion at the surface of In x Ga1- x N films2018

    • Author(s)
      X. Sun, X. Wang, S. Liu, P. Wang, D. Wang, X. Zheng, L. Sang, M. Sumiya, S. Ueda, M. Li, J. Zhang, W. Ge and B. Shen
    • Journal Title

      APEX

      Volume: 11 Issue: 2 Pages: 021001-021001

    • DOI

      10.7567/apex.11.021001

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] AlN metal-semiconductor field-effect transistors using Si-ion implantation2018

    • Author(s)
      H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, Y. Zhang, D. Piedra, and T. Palacios
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57

    • NAID

      210000149017

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams2017

    • Author(s)
      Uedono Akira、Takashima Shinya、Edo Masaharu、Ueno Katsunori、Matsuyama Hideaki、Egger Werner、Koschine Tonjes、Hugenschmidt Christoph、Dickmann Marcel、Kojima Kazunobu、Chichibu Shigefusa F.、Ishibashi Shoji
    • Journal Title

      Phys. Stat. Sol. B

      Volume: 2017 Issue: 4 Pages: 1700521-1700521

    • DOI

      10.1002/pssb.201700521

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams2017

    • Author(s)
      Uedono Akira、Tanaka Taketoshi、Ito Norikazu、Nakahara Ken、Egger Werner、Hugenschmidt Christoph、Ishibashi Shoji、Sumiya Masatomo
    • Journal Title

      Thin Solid Films

      Volume: 639 Pages: 78-83

    • DOI

      10.1016/j.tsf.2017.08.021

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation2017

    • Author(s)
      Uedono Akira、Imanishi Masayuki、Imade Mamoru、Yoshimura Masashi、Ishibashi Shoji、Sumiya Masatomo、Mori Yusuke
    • Journal Title

      J. Cryst. Growth

      Volume: 475 Pages: 261-265

    • DOI

      10.1016/j.jcrysgro.2017.06.027

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Two-component density functional study of positron-vacancy interaction in metals and semiconductors2017

    • Author(s)
      S. Ishibashi
    • Journal Title

      Acta Physica Polonica A

      Volume: 132 Issue: 5 Pages: 1602-1605

    • DOI

      10.12693/aphyspola.132.1602

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Open Access
  • [Presentation] 陽電子消滅によるスパッタ堆積AlN薄膜中の空孔型欠陥検出2021

    • Author(s)
      上殿明良,正直花奈子,上杉謙次郎,秩父重英,石橋章司,Dickmann Marcel,Egger Werner,Hugenschmidt Christoph,三宅秀人
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] AlN単結晶上にHVPE成長させたSi添加AlN基板の発光特性2021

    • Author(s)
      秩父重英,嶋紘平,小島一信,Moody B.,三田清二,Collazo R.,Sitar Z.,熊谷義直,上殿明良
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Mgイオン注入後の空孔ガイド拡散法により形成したp型GaNのルミネッセンス評価2021

    • Author(s)
      嶋紘平,田中亮,高島信也,上野勝典,江戸雅晴,小島一信,上殿明良,秩父重英
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Investigation on vacancy type defects in Fe doped SrSnO3 perovskite nanostructures by Positron annihilation spectroscopy2021

    • Author(s)
      M. Muralidharan, S. Sellaiyan, A. Uedono, K. Sivaji, M. Avinash and A. Kumari
    • Organizer
      Int. Work. Positron Study Defects
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Cathodoluminescence studies of AlN epilayers grown by MOVPE on sputtered AlN templates annealed at high temperature2021

    • Author(s)
      T. Kasuya, K. Shima, K. Shojiki, K. Uesugi, K. Kojima, A. Uedono, H. Miyake, S. F. Chichibu
    • Organizer
      8th Asian Conf. Cryst. Growth and Cryst. Tech.
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Vacancies in AlN deposited by radio-frequency sputtering and MOVPE studied by positron annihilation spectroscopy2021

    • Author(s)
      A. Uedono, K. Shojiki, K. Uesugi, S. F. Chichibu, S. Ishibashi, M. Dickmann, W. Egger, C. Hugenschmidt, and H. Miyake
    • Organizer
      8th Asian Conf. Cryst. Growth and Cryst. Tech.
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates2021

    • Author(s)
      M. Sumiya, Y. Takahara, A. Alghamdi, G. Andersson, A. Uedono, and Y. Imanaka
    • Organizer
      8th Asian Conf. Cryst. Growth and Cryst. Tech.
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] ehaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam2021

    • Author(s)
      A. Uedono, H. Sakurai, T. Narita, K. Sierakowski, M. Bockowski, J. Suda, S. Ishibashi, S. F. Chichibu, and T. Kachi
    • Organizer
      SPIE Photonics West
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Interaction between hydrogen and vacancy-type defects in Mg-implanted2021

    • Author(s)
      A. Uedono, H. Iguchi, T. Narita, K. Kataoka, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Shima, K. Kojima, S. F. Chichibu, and S. Ishibashi
    • Organizer
      Int. Work. Positron Study Defects
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 原子空孔分布分析のための陽電子マイクロプローブ2021

    • Author(s)
      大島永康
    • Organizer
      020年度計量標準総合研究センター成果発表会
    • Related Report
      2020 Annual Research Report
  • [Presentation] AlNテンプレート上AlGaN/InxGa1-xNヘテロ構造の成長2020

    • Author(s)
      角谷正友,高原悠希,今中康貴,Alghamdi Amira,Gunther Andersson,竹端寛治,上殿明良
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 陽電子消滅によるGaN基板上に成膜したTEOS-SiO2膜の空隙の検出2020

    • Author(s)
      上殿明良,上野航,細井卓治,Egger Werner,Hugenschmidt Christoph,Dickmann Marcel,渡部平司
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 高温アニールスパッタAlN上にMOVPE成長させたAlNの陰極線蛍光評価(1)2020

    • Author(s)
      嶋紘平,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 高温アニールスパッタAlN上にMOVPE成長させたAlNの陰極線蛍光評価(2)2020

    • Author(s)
      粕谷拓生,嶋紘平,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] A study of vacancy-type defects in wide-gap semiconductors by means of positron annihilation spectroscopy2020

    • Author(s)
      A. Uedono, M. Dickmann, W. Egger, C. Hugenschmidt, and S. Ishibashi
    • Organizer
      MLZ User Meeting and German Neutron Scattering Conf.
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 陽電子消滅法によるMgイオン注入GaNの空孔型欠陥の焼鈍特性及び欠陥によるキャリア捕獲の研究2020

    • Author(s)
      上殿明良,高島信也,江戸雅晴,上野勝典,松山秀昭,M. Dickmann,W. Egger, C. Hugenschmidt,嶋紘平,小島一信,秩父重英,石橋章司
    • Organizer
      先進パワー半導体分科会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] 陽電子を用いた超高圧焼鈍によるイオン注入GaNの欠陥回復特性の研究2020

    • Author(s)
      上殿明良,櫻井秀樹,成田哲生,Sierakowski Kacper,Bockowski Michal,須田淳,石橋章司,嶋紘平,秩父重英,加地徹
    • Organizer
      第49回結晶成長国内会議
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] ベータ型(AlGa)2O3/Ga2O3 共鳴トンネルダイオードの作製2020

    • Author(s)
      奥村宏典
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 原子空孔分布分析のための陽電子マイクロプローブ2020

    • Author(s)
      大島永康
    • Organizer
      荷電粒子ビームの工業への応用第132委員会・第242回研究会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] 高分子複合材料の微細構造分布を可視化する高輝度陽電子顕微鏡の開発2020

    • Author(s)
      満汐孝治、大島 永康、オローク・ブライアン
    • Organizer
      2020年度計量標準総合研究センター成果発表会
    • Related Report
      2020 Annual Research Report
  • [Presentation] PVT成長AlN上にHVPE成長させたSi添加AlN基板の陰極線蛍光評価2020

    • Author(s)
      秩父重英,嶋紘平,小島一信,Moody Baxter,三田清二,Collazo Ramon,Sitar Zlatko,熊谷義直,上殿明良
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(1)2020

    • Author(s)
      嶋紘平,中須大蔵,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(2)2020

    • Author(s)
      中須大蔵,嶋紘平,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 陽電子消滅によるSiO2/GaN構造の空隙と空孔型欠陥の検出2020

    • Author(s)
      上殿明良,上野航,細井卓治,W. Egger,T. Koschine,C. Hugenschmidt,M. Dickmann M.,渡部平司
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] InGaN/GaNヘテロ構造成長におけるAlNテンプレートの変化2020

    • Author(s)
      角谷正友,高原悠希,矢代秀平,本田 徹,Dickerson Kindole1,竹端寛治,今中康貴,上殿明良
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 気相成長m面自立AlN基板およびホモエピタキシャル層の偏光特性と発光ダイナミクス2020

    • Author(s)
      秩父重英,小島一信,羽豆耕治,石川陽一,古澤健太郎,三田清二,Collazo Ramon,Sitar Zlatko,上殿明良
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Vacancy-type defects in ion-implanted GaN probed by monoenergetic positron beams2019

    • Author(s)
      A. Uedono, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, and S. Ishibashi
    • Organizer
      MLZ User Meeting 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] In Line and Ex Situ Metrology and Characterization to Enable Area Selective Deposition2019

    • Author(s)
      C. Vallee, M. Bonvalot, B. Pelissier, J.-H. Tortai, S. David, S. belahcen, V. Pesce, M. Jaffal, A. Bsiesy, R. Gassilloud, N. Posseme, T. Grehl, P. Bruner, and A. Uedono
    • Organizer
      American Vacuum Society Int. Sym.
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Photoluminescence Studies of Sequentially Mg and H Ion-Implanted GaN with Various Implantation Depths and Crystallographic Planes2019

    • Author(s)
      K Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, and S. F. Chichibu
    • Organizer
      13th Int. Conf. Nitride Semiconductors
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] The Infuence of AlN Nucleation Layer on Radio Frequency (RF) Transmission Loss of GaN-on-Si Structure2019

    • Author(s)
      M. Zhao, V. Spampinato, A. Franquet, D. Hein, L. Chang and A. Uedono
    • Organizer
      13th Int. Conf. Nitride Semiconductors
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Evaluation of Subsequent Implantation Effect into Mg Implanted Region in GaN2019

    • Author(s)
      S. Takashima, R. Tanaka, K. Ueno, H. Matsuyama, Y. Fukushima, M. Edo, K. Shima, K. Kojima, S. F. Chichibu, and A. Uedono
    • Organizer
      13th Int. Conf. Nitride Semiconductors
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors2019

    • Author(s)
      S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono
    • Organizer
      SPIE Photonics West, OPTO
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy2019

    • Author(s)
      A. Uedono, W. Egger, C. Hugenschmidt, and S. Ishibashi
    • Organizer
      SPIE Photonics West, OPTO
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Open spaces in Al2O3 film deposited on widegap semiconductors probed by monoenergetic positron beams2019

    • Author(s)
      A. Uedono, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, M. Sumiya, and S. Ishibashi
    • Organizer
      American Vacuum Society Int. Sym. Ohio
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Annealing behaviors of open spaces in thin Al2O3 films deposited on semiconductors studied using monoenergetic positron beams2019

    • Author(s)
      A. Uedono, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, and S. Ishibashi
    • Organizer
      15th Int. Workshop Slow Positron Beam Techniques and Applications
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Impact of Vacancy Complexes on the Nonradiative Recombination Processes in III-N Devices2019

    • Author(s)
      S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono
    • Organizer
      13th Int. Conf. Nitride Semiconductors
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Vacancy-type defects in GaN-based power device structure defect characterization inion implanted GaN and Al2O3/GaN2019

    • Author(s)
      A. Uedono, W. Egger, C. Hugenschmidt, and S. Ishibashi
    • Organizer
      Compound Semiconductor Week 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 光熱偏向分光法によるギャップ中準位の評価2019

    • Author(s)
      角谷正友
    • Organizer
      第24回結晶工学セミナー 工学院大学新宿キャンパス
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] Electron transport at the interface of AlGaN/InGaN fabricated on AlN template2019

    • Author(s)
      M. Sumiya, D. Kindole, S. Yashiro, K. Takehana, T. Honda, and Y. Imanaka
    • Organizer
      日本MRS創立30周年記念シンポジウム
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Demonstration of (AlGa)2O3-channel MOSFETs2019

    • Author(s)
      H. Okumura, Y. Kato, T. Oshima, and T. Palacios,
    • Organizer
      2019 International Workshop on Gallium Oxide and related materials
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Direct Growth of AlGaN/InGaN/GaN Structure on AlN Template for Measurement of Effective Mass in InGaN Layer2019

    • Author(s)
      M. Sumiya, D. Kindole, S. Yashiro, T. Honda, and Y. Imanaka
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] サイクロトロン共鳴に向けたAlNテンプレート上 AlGaN/InGaNヘテロ構造の成長2019

    • Author(s)
      角谷正友、福田清貴、矢代秀平、本田徹、D. Kindole、竹端寛治、今中康貴
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] InGaN 二次元電子系の有効質量の評価2019

    • Author(s)
      今中康貴、Dickerson Kindole、竹端寛治、角谷正友
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] AlNテンプレート上に成長したGaN薄膜の光熱偏向分光法による評価2019

    • Author(s)
      矢代秀平、本田徹、角谷正友
    • Organizer
      第2回結晶工学ⅹISYSE 合同研究会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 光熱偏向分光によるIII-V族窒化物の評価2019

    • Author(s)
      角谷正友
    • Organizer
      レーザ・量子エレクトロニクス研究会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Positron microbeam experiments in AIST2019

    • Author(s)
      Nagayasu Oshima
    • Organizer
      4th Japan-China Joint Workshop on Positron Science
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 産総研 低速陽電子ビーム利用施設の現状 -寿命測定装置開発とビームライン整備2019

    • Author(s)
      満汐 孝治 、小林 慶規 、オローク・ブライアン、鈴木 良一、 大島 永康
    • Organizer
      第56回アイソトープ・放射線研究発表会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 陽電子ビームを用いた消滅ガンマ線ドップラー広がりシステム2019

    • Author(s)
      大島 永康、オローク・ブライアン、満汐 孝治 、折原拓磨、佐藤公法
    • Organizer
      2019年度計量標準総合センター成果発表会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 産総研・低速陽電子ビーム施設2019

    • Author(s)
      満汐 孝治 、オローク・ブライアン、大島 永康
    • Organizer
      2019年度量子ビームサイエンスフェスタ
    • Related Report
      2019 Annual Research Report
  • [Presentation] 容量測定を用いたp-GaNエピへの低濃度Mg注入と共注入影響の評価2019

    • Author(s)
      高島信也,上野勝典,田中亮,松山秀昭,江戸雅晴,嶋紘平,小島一信,秩父重英,上殿明良
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 注入深さ・極性面の異なるMgイオン注入GaNのフォトルミネッセンス2019

    • Author(s)
      秩父重英,嶋紘平,井口紘子,成田哲生,片岡恵太,小島一信,上殿明良
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] エピタキシャル成長およびイオン注入Mg添加GaN中の非輻射再結合中心2019

    • Author(s)
      秩父重英,嶋紘平,小島一信,高島信也,上野勝典,江戸雅晴,井口紘子,成田哲生,片岡恵太,石橋章司,上殿明良
    • Organizer
      第216回研究集会 シリコンテクノロジー分科会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 光熱偏向分光法によるGaN自立基板上ホモエピタキシャル層の評価2019

    • Author(s)
      福田 清貴, 矢代秀平, 藤倉序章, 今野泰一郎, 鈴木貴征, 藤本哲爾, 吉田丈洋, 尾沼 猛儀, 山口智広,本田 徹, 角谷 正友
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 放射光光電子分光によるIII-V族窒化物半導体の価電子帯構造と表面酸化プロセスの評価2019

    • Author(s)
      角谷正友, 上田茂典, 吉越章隆, 隅田真人
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] 欠陥・空隙評価のための産総研低速陽電子ビーム施設2019

    • Author(s)
      満汐孝治,小林慶規,オローク・ブライアン,鈴木良一,大島永康
    • Organizer
      2018年度量子ビームサイエンスフェスタ
    • Related Report
      2018 Annual Research Report
  • [Presentation] 高純度ZnO中のSRH型非輻射再結合中心の起源と捕獲断面積2018

    • Author(s)
      秩父重英,小島一信,小池一歩,矢野満明,權田俊一,石橋章司,上殿明良
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Al2O3/n-, p-GaN構造の光熱偏向分光法による評価2018

    • Author(s)
      福田清貴,浅井祐哉,関慶祐,Sang Liwen,吉越章隆,上殿明良,石垣隆正,尾沼猛儀,山口智広,本田徹,角谷正友
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 分子線酸素ビーム照射下その場観察XPS によるGaN 表面酸化の面方位依存性2018

    • Author(s)
      浅井祐哉,関慶祐,吉越章隆,隅田真人,石垣隆正,上殿明良,角谷正友
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 光熱偏向分光法によるMgイオン注入GaN層の評価2018

    • Author(s)
      福田清貴,高島信也,尾沼猛儀,山口智広,本田徹,上殿明良,角谷正友
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] III-V族窒化物の価電子帯構造およびギャップ内準位の評価2018

    • Author(s)
      角谷正友,福田清貴,上田茂典,浅井祐哉,Cho Yujin,関口隆史,上殿明良,尾沼猛儀,Sang Liwen,山口智広,本田徹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted Mg-doped GaN on GaN structures2018

    • Author(s)
      S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S. Ishibashi, and A. Uedono
    • Organizer
      Int. Workshop on Nitride Semiconductor 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Evaluation of Al2O3/n-, p-GaN samples by photothermal deflection spectroscopy2018

    • Author(s)
      K. Fukuda, Y. Asai, L. Sang, A. Yoshigoe, A. Uedono, T. Onuma, T. Yamaguchi, T. Honda, and M. Sumiya
    • Organizer
      Int. Workshop on Nitride Semiconductor 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Study of the dependence of GaN surface oxidation on the crystalline plane by in-situ XPS during O2 molecular beam irradiation2018

    • Author(s)
      Y. Asai, A. Yoshigoe, M. Sumita, A. Uedono, and M. Sumiya
    • Organizer
      Int. Workshop on Nitride Semiconductor 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Analysis of deep traps at Al2O3/n-GaN interface using photo-assisted C-V measurement2018

    • Author(s)
      K. Yuge, T. Nabatame, Y. Irokawa, A. Ohi, N. Ikeda, A. Uedono, L. Sang, Y. Koide, and T. Ohishi
    • Organizer
      2018 Int. Conf. Solid State Devices and Materials
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal election spectroscopy2018

    • Author(s)
      M. Sumiya, K. Fukuda, S. Takashima, T. Yamaguchi, T. Onuma, T. Honda, and A. Uedono
    • Organizer
      19TH Int. Conf. Metalorganic Vapor Phase Epitaxy
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams2018

    • Author(s)
      A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, and S. Chichibu, S. Ishibashi
    • Organizer
      45th Int. Sym. Compound Semiconductors, 30th Int. Conf. Indium Phosphide and Related Materials, Compound Semiconductor Week 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Vacancy-Type Defects and Their Carrier Trapping Properties in GaN Studied by Monoenergetic Positron Beams2018

    • Author(s)
      A. Uedono, T. Tanaka, N. Ito, K. Nakahara, W. Egger, C. Hugenschmidt, S. Ishibashi, and M. Sumiya
    • Organizer
      Electro Chemical Soc. and Americas Int. Meeting Electrochem. Solis state Science
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Carrier Trapping and Detrapping Processes in Wide Bandgap Semiconductors Studied by Positron Annihilation2018

    • Author(s)
      A. Uedono, W. Egger, C. Hugenschmidt, and S. Ishibashi
    • Organizer
      Int. Conf. Positron Annihilation
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 学術界における量子ビーム利用-陽電子消滅法を例に-2018

    • Author(s)
      上殿明良
    • Organizer
      第1回量子ビームクラブ研究会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] 陽電子消滅法によるp-GaNエピ層、イオン注入層の点欠陥評価2018

    • Author(s)
      上殿明良
    • Organizer
      第149回結晶工学分科会研究会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] PDS measurement for III-V nitride samples; InxGa1-xN, ion-implanted GaN and MOS structure2018

    • Author(s)
      K. Fukuda, T. Onuma, T. Yamaguchi, T. Honda and M.Sumiya
    • Organizer
      第37回電子材料シンポジウム
    • Related Report
      2018 Annual Research Report
  • [Presentation] Evaluation of Structural Disorder and In-Gap States of III-V nitrides by Photothermal Deflection Spectroscopy2018

    • Author(s)
      M. Sumiya, K. Fukuda, Y. Nakano, S. Ueda, L. Sang, H. Iwai, T. Yamaguchi, T. Onuma, and T. Honda
    • Organizer
      7th International Symposium of Nitride Semiconductor
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 産総研 電子加速器ベース低速陽電子利用施設2018

    • Author(s)
      大島永康,満汐孝治,オローク・ブライアン,小林慶規,鈴木良一
    • Organizer
      第15回日本加速器学会年会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Demonstration of Nitrogen-face AlN-based polarization field-effect transistors2018

    • Author(s)
      H. Okumura, J. Lemettinen, S. Suihkonen, T. Palacios
    • Organizer
      Int. Workshop on Nitride Semiconductor 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Demonstration of beta-(AlGa)2O3 (010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V2018

    • Author(s)
      H. Okumura, Y. Kato, T. Oshima, T. Palacios
    • Organizer
      2018 Int. Conf. Solid State Devices and Materials
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Nitrogen-face AlN-based field-effect transistors2018

    • Author(s)
      H. Okumura, J. Lemettinen, S. Suihkonen, T. Palacios
    • Organizer
      45th Int. Sym. Compound Semiconductors, 30th Int. Conf. Indium Phosphide and Related Materials, Compound Semiconductor Week 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Slow positron beam and related research at AIST -Recent developments and future plans2018

    • Author(s)
      B. E. O’Rourke, K.Ito, Y. Kobayashi, K. Michishio, T. Ohdaira, N. Oshima, R. Suzuki, M. Yamawaki
    • Organizer
      18th Int. Conf. Positron Annihilation
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Progress and Challenges of Crystal Growths and Devices for Wide Band-gap Semiconductors over 5 eV2018

    • Author(s)
      H. Okumura
    • Organizer
      Seminar, Ohio State University
    • Related Report
      2018 Annual Research Report
  • [Presentation] 陽電子を用いる超微細欠陥の評価技術2018

    • Author(s)
      オローク・ブライアン,満汐孝治,大平俊行, 小林慶規,鈴木良一,大島永康
    • Organizer
      JASIS2018コンファレンス分析計測標準研究部門第4回シンポジウム
    • Related Report
      2018 Annual Research Report
  • [Presentation] ナノ空隙評価のための高強度低速陽電子ビーム利用施設2018

    • Author(s)
      満汐孝治,オローク・ブライアン,小林慶規,鈴木良一,大島永康
    • Organizer
      JASIS2018コンファレンス分析計測標準研究部門第4回シンポジウム
    • Related Report
      2018 Annual Research Report
  • [Presentation] III-V族窒化物の価電子帯構造およびギャップ内準位の評価2018

    • Author(s)
      角谷正友, 福田清貴,上田茂典, 浅井祐哉, Cho Yujin, 関口隆史, 上殿明良, 尾沼猛儀, Sang Liwen, 本田徹
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Mgイオン注入N極性面GaNの時間分解フォトルミネッセンス評価2018

    • Author(s)
      嶋紘平, 井口紘子, 成田哲生, 片岡恵太, 上殿明良, 小島一信, 秩父重英
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Mg イオン注入GaN MOSFET のチャネル特性向上2018

    • Author(s)
      高島信也,田中亮,上野勝典,松山秀昭,江戸雅晴, 小島一信, 秩父重英, 上殿明良, 中川清和
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Carrier trapping by vacancy-type defects in group-III nitrides studied by means of positron annihilation2018

    • Author(s)
      A. Uedono, M. Sumiya, and S. Ishibashi
    • Organizer
      Third DAE-BRNS Trombay Positron Meeting
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 陽電子消滅による窒化物半導体中0次元特異構造(点欠陥)のキャリア捕獲の評価2018

    • Author(s)
      上殿明良,石橋章司,角谷正友
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] イオン注入したGaNの光熱偏向分光法による評価2018

    • Author(s)
      福田清貴,尾沼猛儀, 山口智広、本田徹, 岩井秀夫、Sang Liwen,角谷正友
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] GaN基板上Mg添加GaNの時間分解フォトルミネッセンス評価2017

    • Author(s)
      秩父重英,小島一信,嶋紘平,高島信也,江戸雅晴,上野勝典,石橋章司,上殿明良
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Theoretical calculation of positron annihilation parameters for defects in UV materials (AlN, ZnO, Ga2O3)2017

    • Author(s)
      S. Ishibashi and A. Uedono
    • Organizer
      Int. Workshop on UV Materials and Devices
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Theoretical Calculation of Positron Annihilation Parameters in Group-III nitrides2017

    • Author(s)
      S. Ishibashi and A. Uedono
    • Organizer
      29th Int. Conf. Defects in Semiconductors, Matsue
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Role of point defects on the luminescent properties of epitaxial and ion-implanted Mg-doped GaN fabricated on a GaN substrate2017

    • Author(s)
      S. F. Chichibu, K. Kojima, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, and A. Uedono
    • Organizer
      12th Int. Conf. Nitride Semiconductors, Strasbourg Convention Center
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Vacuum-fluorescent-display devices emitting polarized deep-ultraviolet and visible lights using m-plane Al1-xInxN epitaxial nanostructures2017

    • Author(s)
      S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
    • Organizer
      11th Int. Sym. Semiconductor on Light Emitting Devices
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Study of point defects in nitrides and oxides by means of positron annihilation2017

    • Author(s)
      A. Uedono
    • Organizer
      5th Int. Conf. on Light-Emitting Devices and Their Industrial Applications
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] Two-component density functional study of positron-vacancy interaction in metals and semiconductors2017

    • Author(s)
      S. Ishibashi
    • Organizer
      12th International Workshop on Positron and Positronium Chemistry
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 光熱偏向分光法によるGa1-xInxN薄膜の評価2017

    • Author(s)
      福田 清貴、尾沼 猛儀、Sang Liwen、山口 智広、本田 徹、角谷 正友
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] AlN metal-semiconductor field-effect transistors using Si-ion implantation2017

    • Author(s)
      H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, T. Palacios
    • Organizer
      2017 Material Research Society Fall Meeting
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] AlN metal-semiconductor field-effect transistors using Si-ion implantation2017

    • Author(s)
      H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, and T. Palacios
    • Organizer
      2017 International Conference on Solid State Devices and Materials
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Electrical Properties of Si-Ion Implanted AlN2017

    • Author(s)
      H. Okumura, S. Suihkonen, and T. Palacios
    • Organizer
      12th Int. Conf. Nitride Semiconductors
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] MOVPE growth of nitrogen-polar AlN on C-face 4H-SiC with miscut2017

    • Author(s)
      J. Lemettinen, H. Okumura, T. Palacios, and S. Suihkonen
    • Organizer
      12th Int. Conf. on Nitride Semiconductors
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 窒化物半導体合金中の陽イオン空孔における局所構造と陽電子消滅パラメータの間の相関の計算科学的研究2016

    • Author(s)
      石橋章司、上殿明良、木野日織、三宅隆、寺倉清之
    • Organizer
      平成28年度京都大学原子炉実験所専門研究会
    • Place of Presentation
      京都大学原子炉実験所(大阪府泉南郡)
    • Year and Date
      2016-12-08
    • Related Report
      2016 Annual Research Report
  • [Presentation] InGaN系太陽電池の欠陥制御と高効率化2016

    • Author(s)
      角谷正友、Liwen Sang
    • Organizer
      2016年真空・表面科学合同講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2016-12-01
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Book] 空孔評価のための陽電子マイクロビーム技術2019

    • Author(s)
      大島永康
    • Total Pages
      3
    • Publisher
      (一社)日本計量振興協会
    • Related Report
      2019 Annual Research Report

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Published: 2016-07-04   Modified: 2022-01-27  

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