近接場分光（SNOM）による特異構造の発光機構解明と制御

• Project Area: Materials Science and Advanced Elecronics created by singularity
• Project/Area Number: 16H06426
• Research Category: Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Kyoto University
• Principal Investigator: 川上 養一 京都大学, 工学研究科, 教授 (30214604)
• Co-Investigator(Kenkyū-buntansha): 船戸 充 京都大学, 工学研究科, 准教授 (70240827) ; 石井 良太 京都大学, 工学研究科, 助教 (60737047)
• Project Period (FY): 2016-06-30 – 2021-03-31
• Project Status: Discontinued (Fiscal Year 2020)
• Budget Amount: ¥102,180,000 (Direct Cost: ¥78,600,000、Indirect Cost: ¥23,580,000); Fiscal Year 2020: ¥14,560,000 (Direct Cost: ¥11,200,000、Indirect Cost: ¥3,360,000); Fiscal Year 2019: ¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000); Fiscal Year 2018: ¥20,540,000 (Direct Cost: ¥15,800,000、Indirect Cost: ¥4,740,000); Fiscal Year 2017: ¥21,450,000 (Direct Cost: ¥16,500,000、Indirect Cost: ¥4,950,000); Fiscal Year 2016: ¥26,520,000 (Direct Cost: ¥20,400,000、Indirect Cost: ¥6,120,000)
• Keywords: 近接場光学顕微鏡 / 顕微分光 / 窒化物半導体 / 特異構造 / 近接場分光 / 発光機構解明 / 発光制御 / 深紫外分光 / 窒化物特異構造 / 光物性評価 / 多波長発光素子 / 深紫外フォトニクス

Outline of Annual Research Achievements

本研究課題では，InリッチInGaNおよびAlリッチAlGaNの近接場分光（SNOM）マッピングを中心とした評価手法によって，これら半導体の特異構造を詳細に評価してきた．最終年度である本年度の成果は以下の通りである．
(1)基板のオフ角分布によるInGaN量子井戸の多波長化の実現と機構解明：申請者らはC面GaN基板のオフ角を基板面内で分布させることで，紫から青色領域で25nmの範囲で発光波長を面内分布させることに成功した．この成果は，ブロードバンドタイプのスーパールミネッセントダイオード実現に繋がるものである．
(2)半極性面AlN基板上でのAlGaN系半導体の歪み緩和機構解明：半極性r面AlN基板上に作製したAlGaN薄膜の歪緩和度は，極性面上の試料よりも大きく特異な歪み緩和機構が観測された．そこで，歪緩和モデルを構築し統一的な理解を得た．
(3)深紫外SNOM分光技術の深化：AlリッチAlGaN系量子井戸の顕微分光を回折限界以上の高分解能で行うには，この波長域で分光可能な近接場光学顕微鏡（SNOM）の開発が必要となる．申請者のグループは，超安定リングキャビティーチタンサファイアレーザと非線形光学技術によって波長210nmの深紫外CWレーザ装置を構築するとともに，深紫外オプティクスの構築によって，室温において約100nmの分解能でAlGaN量子井戸の深紫外分光マッピングに成功している．昨年度は，クライオスタットを導入したが，振動レベルの低減が課題となっていた．今年度は，新たな除振手法を構築し，極低温域から室温までの温度可変にて分光可能な深紫外SNOM技術を構築した．
(4)AlリッチAlGaN系特異構造の発光ダイナミクス評価：微傾斜AlN基板上のステップバンチングに形成される細線状Gaリッチ局在中心における輻射・非輻射過程を深紫外SNOM装置を用いて精査し，高効率化への指針を得た．

Research Progress Status

令和2年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

令和2年度が最終年度であるため、記入しない。

Research Products

• [Journal Article] Long-range electron-hole exchange interaction in aluminum nitride (2020)
  • Author(s): R. Ishii, M. Funato, and Y. Kawakami
  • Journal Title: Physical Review B Volume: 102 Issue: 15 Pages: 1-5
  • DOI: 10.1103/physrevb.102.155202
  • Peer Reviewed
• [Journal Article] 265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions (2020)
  • Author(s): R. Ishii, A. Yoshikawa, K. Nagase, M. Funato, and Y. Kawakami
  • Journal Title: Applied Physics Express Volume: 13 Issue: 10 Pages: 102005-102005
  • DOI: 10.35848/1882-0786/abb86f
  • Peer Reviewed
• [Journal Article] Deposition of carbon-containing hole injection layers on p-type Al0.8Ga0.2N grown by metalorganic vapor phase epitaxy (2020)
  • Author(s): K. Kishimoto, M. Funato, and Y. Kawakami
  • Journal Title: Applied Physics Letters Volume: 117 Issue: 6 Pages: 062101-062101
  • DOI: 10.1063/5.0017703
  • Peer Reviewed
• [Journal Article] Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes (2020)
  • Author(s): A. Kafar, R. Ishii, K. Gibasiewicz, Y. Matsuda, S. Stanczyk, D. Schiavon, S. Grzanka, M. Tano, A. Sakaki, T. Suski, P. Perlin, M. Funato, and Y. Kawakami
  • Journal Title: Optics Express Volume: 28 Issue: 15 Pages: 22524-22539
  • DOI: 10.1364/oe.394580
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology (2020)
  • Author(s): B. Mitchell, D. Timmerman, W. Zhu, J. Y. Lin, H. X. Jiang, J. Poplawsky, R. Ishii, Y. Kawakami, V. Dierolf, J. Tatebayashi, S. Ichikawa, and Y. Fujiwara
  • Journal Title: Journal of Applied Physics Volume: 127 Issue: 1 Pages: 013102-013102
  • DOI: 10.1063/1.5134050
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Control of p-type conductivity at AlN surfaces by carbon doping (2020)
  • Author(s): K. Kishimoto, M. Funato and Y. Kawakami
  • Journal Title: Applied Physics Express Volume: 13 Issue: 1 Pages: 015512-015512
  • DOI: 10.7567/1882-0786/ab6589
  • NAID: 210000157912
  • Peer Reviewed / Open Access
• [Journal Article] Achromatic Deep Ultraviolet Lens Using Novel Optical Materials (2020)
  • Author(s): Y. Minami, M. Cadatal-Raduban, K. Kuroda, K. Shinohara, Y. Lai, K. Yamanoi, N. Sarukura, T. Shimizu, R. Ishii, Y. Kawakami, N. Kabasawa, T. Amano, K. Kiyohara, and M. Kiyohara
  • Journal Title: physica status solidi (b) Volume: in press Issue: 8 Pages: 1900480-1900480
  • DOI: 10.1002/pssb.201900480
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells (2019)
  • Author(s): K. Tateishi, P. Wang, S. Ryuzaki, M. Funato, Y. Kawakami, K. Okamoto and K. Tamada
  • Journal Title: Applied Physics Express Volume: 11 Issue: 5 Pages: 052016-052016
  • DOI: 10.7567/1882-0786/ab0911
  • NAID: 210000135662
  • Peer Reviewed
• [Journal Article] Micro-photoluminescence mapping of surface plasmon-coupled emission from InGaN/GaN quantum wells (2019)
  • Author(s): K. Okamoto, K. Tateishi, K. Tamada, M. Funato and Y. Kawakami
  • Journal Title: Japanese Journal of Applied Physics Volume: 58 Issue: SC Pages: SCCB31-SCCB31
  • DOI: 10.7567/1347-4065/ab07ae
  • NAID: 210000156116
  • Peer Reviewed
• [Journal Article] Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates (2019)
  • Author(s): S. Ichikawa, M. Funato and Y. Kawakami
  • Journal Title: Journal of Crystal Growth Volume: 522 Pages: 68-77
  • DOI: 10.1016/j.jcrysgro.2019.06.010
  • Peer Reviewed
• [Journal Article] Pushing the limits of deep-ultraviolet scanning near-field optical microscopy (2019)
  • Author(s): R. Ishii, M. Funato and Y. Kawakami
  • Journal Title: APL Photonics Volume: 4 Issue: 7 Pages: 070801-070801
  • DOI: 10.1063/1.5097865
  • Peer Reviewed / Open Access
• [Journal Article] Broadband ultraviolet emission from 2D arrays of AlGaN microstructures grown on the patterned AlN templates (2019)
  • Author(s): K. Kataoka, M. Funato and Y. Kawakami
  • Journal Title: physica status solidi (a) Volume: 216 Issue: 7 Pages: 1900764-1900764
  • DOI: 10.1002/pssa.201900764
  • Peer Reviewed
• [Journal Article] Self-limiting growth of ultrathin GaN/AlN quantum wells for highly efficient deep ultraviolet emitters (2019)
  • Author(s): H. Kobayashi, S. Ichikawa, M. Funato and Y. Kawakami
  • Journal Title: Advanced Optical Materials Volume: 7 Issue: 21 Pages: 1900860-1900860
  • DOI: 10.1002/adom.201900860
  • Peer Reviewed
• [Journal Article] Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells (2019)
  • Author(s): K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami, H. Miyake
  • Journal Title: AIP Advances Volume: 9 Issue: 12 Pages: 125342-125342
  • DOI: 10.1063/1.5125799
  • Peer Reviewed / Open Access
• [Journal Article] AlxGa1-xN -based quantum wells fabricated on macrosteps effectively suppressing nonradiative recombination (2019)
  • Author(s): M. Hayakawa, S. Ichikawa, M. Funato, and Y. Kawakami
  • Journal Title: Advanced Optical Materials Volume: 7
  • Peer Reviewed
• [Journal Article] Isotopic effects on phonons and excitons in diamond studied by deep-ultraviolet continuous-wave photoluminescence spectroscopy (2019)
  • Author(s): R. Ishii, S. Shikata, T. Teraji, H. Kanda, H. Watanabe, M. Funato, and Y. Kawakami
  • Journal Title: Japanese Journal of Applied Physics Volume: 58 Issue: 1 Pages: 010904-010904
  • DOI: 10.7567/1347-4065/aaef3e
  • NAID: 210000135251
  • Peer Reviewed
• [Journal Article] Red-emitting InxGa1-xN/InyGa1-yN quantum wells grown on lattice-matched InyGa1-yN /ScAlMgO4(0001) templates (2019)
  • Author(s): T. Ozaki, M. Funato, and Y. Kawakami
  • Journal Title: Applied Physics Express Volume: 12 Issue: 1 Pages: 011007-011007
  • DOI: 10.7567/1882-0786/aaf4b1
  • Peer Reviewed
• [Journal Article] Impact of microscopic In fluctuations on the optical properties of InxGa1-xN blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation (2019)
  • Author(s): A. Sakaki, M. Funato, M. Miyano, T. Okazaki, and Y. Kawakami
  • Journal Title: Scientific Reports Volume: 9 Issue: 1
  • DOI: 10.1038/s41598-019-39086-5
  • Peer Reviewed
• [Journal Article] 超ワイドバンドギャップ半導体AlNにおける励起子再結合過程の同定 (2019)
  • Author(s): 船戸充, 市川修平, 川上養一
  • Journal Title: 京都大学物性科学センター誌, Volume: 33 Pages: 10-17
  • NAID: 120006773146
  • Peer Reviewed
• [Journal Article] AlxGa1-xN-based semipolar deep ultraviolet light-emitting diodes (2018)
  • Author(s): R. Akaike, S. Ichikawa, M. Funato, and Y. Kawakami
  • Journal Title: Applied Physics Express Volume: 11 Issue: 6 Pages: 061001-061001
  • DOI: 10.7567/apex.11.061001
  • NAID: 210000136213
  • Peer Reviewed
• [Journal Article] Growth mechanism of polar-plane-free faceted InGaN quantum wells (2018)
  • Author(s): Y. Matsuda, M. Funato, and Y. Kawakami
  • Journal Title: IEICE Transactions on Electronics Volume: E101-C Pages: 532-536
  • NAID: 130007386831
  • Peer Reviewed
• [Journal Article] Dominant nonradiative recombination paths and their activation processes in AlxGa1-xN-related materials (2018)
  • Author(s): S. Ichikawa, M. Funato, and Y. Kawakami
  • Journal Title: Physical Review Applied Volume: 10
  • Peer Reviewed
• [Journal Article] Synchrotron radiation microbeam X-ray diffraction for nondestructive assessments of local structural properties of faceted InGaN/GaN quantum wells (2018)
  • Author(s): Sakaki Atsushi、Funato Mitsuru、Kawamura Tomoaki、Araki Jun、Kawakami Yoichi
  • Journal Title: Applied Physics Express Volume: 11 Issue: 3 Pages: 031001-031001
  • DOI: 10.7567/apex.11.031001
  • NAID: 210000136115
  • Peer Reviewed
• [Journal Article] Deep ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells (2017)
  • Author(s): K. Kataoka, M. Funato, and Y. Kawakami
  • Journal Title: Appl. Phys. Exp. Volume: 10 Issue: 3 Pages: 031001-031001
  • DOI: 10.7567/apex.10.031001
  • NAID: 210000135777
  • Peer Reviewed
• [Journal Article] Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities (2017)
  • Author(s): Matsuda Yoshinobu、Funato Mitsuru、Kawakami Yoichi
  • Journal Title: Applied Physics Express Volume: 10 Issue: 7 Pages: 071003-071003
  • DOI: 10.7567/apex.10.071003
  • NAID: 210000135899
  • Peer Reviewed
• [Journal Article] Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quantum wells (2017)
  • Author(s): Kataoka Ken、Funato Mitsuru、Kawakami Yoichi
  • Journal Title: Applied Physics Express Volume: 10 Issue: 12 Pages: 121001-121001
  • DOI: 10.7567/apex.10.121001
  • NAID: 210000136026
  • Peer Reviewed
• [Journal Article] Heteroepitaxy mechanisms of AlN on nitridated c- and a-plane sapphire substrates (2017)
  • Author(s): M. Funato, M. Shibaoka, and Y. Kawakami
  • Journal Title: J. Appl. Phys. Volume: 121 Issue: 8 Pages: 085304-085304
  • DOI: 10.1063/1.4977108
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE (2017)
  • Author(s): Katsuhiro Kishimoto、Mitsuru Funato、Yoichi Kawakami
  • Journal Title: Crystals Volume: 7 Issue: 5 Pages: 123-123
  • DOI: 10.3390/cryst7050123
  • NAID: 120006318891
  • Peer Reviewed
• [Journal Article] High-efficiency light emission by means of exciton-surface-plasmon coupling (2017)
  • Author(s): K. Okamoto, M. Funato, Y. Kawakami, and K. Tamada
  • Journal Title: J. Photochemistry and Photobiology C: Photochemistry Reviews Volume: 32 Pages: 58-77
  • DOI: 10.1016/j.jphotochemrev.2017.05.005
  • Peer Reviewed
• [Journal Article] Origin of temperature-induced luminescence peak shifts from semipolar (112￣2) InxGa1?xN quantum wells (2017)
  • Author(s): Ozaki Takuya、Funato Mitsuru、Kawakami Yoichi
  • Journal Title: Physical Review B Volume: 96 Issue: 12
  • DOI: 10.1103/physrevb.96.125305
  • Peer Reviewed
• [Journal Article] Design of Al-rich AlGaN quantum-well structures for efficient UV emitters (2017)
  • Author(s): M. Funato, S. Ichikawa, K. Kumamoto, and Y. Kawakami
  • Journal Title: Proceedings of SPIE Photonics West 2017 Volume: 101040 Pages: 101040I-101040I
  • DOI: 10.1117/12.2254797
  • Peer Reviewed
• [Journal Article] Plasmonics toward high efficiency LEDs from the visible to the deep UV region (2017)
  • Author(s): K. Okamoto, M. Funato, Y. Kawakami, N. Okada, K. Tadatomo, and K. Tamada
  • Journal Title: Proceedings of SPIE Photonics West 2017 Volume: 101240
• [Journal Article] Evaluating the well-to-well distribution of radiative recombination rates in semipolar (11-22) InGaN multiple-quantum-well light-emitting diodes (2016)
  • Author(s): M. Funato, K. Matsufuji, and Y. Kawakami
  • Journal Title: Appl. Phys. Exp. Volume: 9 Issue: 7 Pages: 072102-072102
  • DOI: 10.7567/apex.9.072102
  • Peer Reviewed
• [Journal Article] Control of GaN facet structures through Eu doping toward achieving semipolar {1-101} and {2-201} InGaN/GaN quantum wells (2016)
  • Author(s): T. Kojima, S. Takano, R. Hasegawa, D. Timmerman, A. Koizumi, M. Funato, Y. Kawakami, and Y. Fujiwara
  • Journal Title: Appl. Phys. Lett. Volume: 109
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Impact of radiative and nonradiative recombination processes on the efficiency-droop phenomenon in InGaN single quantum wells studied by scanning near-field optical microscopy (2016)
  • Author(s): Y. Kawakami, A. Kaneta, A. Hashiya, and M. Funato
  • Journal Title: Phys. Rev. Applied Volume: 6 Issue: 4
  • DOI: 10.1103/physrevapplied.6.044018
  • Peer Reviewed
• [Journal Article] Control of crystal morphologies and interface structures of AlN grown on sapphire by elementary source vapor phase epitaxy (2016)
  • Author(s): P.-T. Wu, K. Kishimoto, M. Funato, and Y. Kawakami
  • Journal Title: Cryst. Growth & Design Volume: 16 Issue: 11 Pages: 6337-6342
  • DOI: 10.1021/acs.cgd.6b00979
  • Peer Reviewed
• [Journal Article] Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surfaces (2016)
  • Author(s): M. Hayakawa, Y. Hayashi, S. Ichikawa, M. Funato, and Y. Kawakami
  • Journal Title: Proceedings of SPIE Nanoscience + Engineering 2016 Volume: 9363 Pages: 99260S-99260S
  • DOI: 10.1117/12.2237606
  • Peer Reviewed
• [Journal Article] 極性面フリーなInGaNマルチファセット構造を用いた多色発光の実現 (2016)
  • Author(s): 松田祥伸, 船戸充, 川上養一
  • Journal Title: 電子情報通信学会 信学技報 Volume: 116
• [Journal Article] クリーンプロセスによるAlNバルク結晶の成長 (2016)
  • Author(s): 岸元克浩, 呉珮岑, 船戸充, 川上養一
  • Journal Title: 電子情報通信学会 信学技報 Volume: 116
• [Presentation] InGaN-based quantum wells on ScAlMgO4 substrates toward long wavelength emitters (2020)
  • Author(s): T. Ozaki, M. Funato and Y. Kawakami
  • Organizer: SPIE Photonics West
  • Int'l Joint Research / Invited
• [Presentation] Exciton fine structure of aluminum nitride (2020)
  • Author(s): R. Ishii, M. Funato and Y. Kawakami
  • Organizer: SPIE Photonics West
  • Int'l Joint Research / Invited
• [Presentation] Exploring the growth procedures for polar-plane-free faceted InGaN-LED structures (2019)
  • Author(s): Y. Matsuda, M. Funato and Y. Kawakami
  • Organizer: Conference on LED and its industrial application `19 (LEDIA)
  • Int'l Joint Research
• [Presentation] Broad-band UV emission from a two-dimensional array of AlGaN microstructures (2019)
  • Author(s): M. Funato, K. Kataoka and Y. Kawakami
  • Organizer: 13th International Conference on Nitride Semiconductors
  • Int'l Joint Research
• [Presentation] Highly efficient UV emission from ultrathin GaN/AlN quantum wells grown by metalorganic vapor phase epitaxy (2019)
  • Author(s): M. Funato, H. Kobayashi and Y. Kawakami
  • Organizer: 3th International Conference on Nitride Semiconductors
  • Int'l Joint Research
• [Presentation] Fabrication of polar-plane-free faceted InGaN LED structures with polychromatic emission properties (2019)
  • Author(s): Y. Matsuda, M. Funato and Y. Kawakami
  • Organizer: 13th International Conference on Nitride Semiconductors
  • Int'l Joint Research
• [Presentation] Comparative study of AlGaN multiple quantum wells on annealed-sputtered-AlN and MOVPE-grown-AlN on sapphire substrates (2019)
  • Author(s): K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami and H. Miyake
  • Organizer: 13th International Conference on Nitride Semiconductors
  • Int'l Joint Research
• [Presentation] GaN/AlN ultrathin quantum wells for UV emitters (2019)
  • Author(s): M. Funato and Y. Kawakami
  • Organizer: 7th Intern. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
  • Int'l Joint Research / Invited
• [Presentation] Adding p-type conductivity to AlN surfaces by deposition of ultrathin carbon-containing layers (2019)
  • Author(s): K. Kishimoto, M. Funato, and Y. Kawakami
  • Organizer: 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
  • Int'l Joint Research
• [Presentation] Emission enhancements of InGaN/GaN MQW beyond skin depth of surface plasmon polariton (2019)
  • Author(s): F. Murao, T. Matsuyama, K. Wada, M. Funato, Y. Kawakami and K. Okamoto
  • Organizer: 7th Intern. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
  • Int'l Joint Research
• [Presentation] Tailor-made LEDs with nitride-based 3D-structures (2019)
  • Author(s): Y. Kawakami
  • Organizer: TVS-2019 Workshop
  • Int'l Joint Research / Invited
• [Presentation] Engineering of emission wavelength of InGaN quantum wells by fabrication of spatial off-cut variation (2019)
  • Author(s): A. Kafar, R. Ishii, S. Stanczyk, K. Gibasiewicz, S. Grzanka, T. Suski, P. Perlin, M. Funato and Y. Kawakami
  • Organizer: 9th Asia-Pacific Workshop on Widegap Semiconductors
  • Int'l Joint Research
• [Presentation] High-temperature promoted nonradiative recombination at threading dislocations in blue-emitting InGaN quantum well (2019)
  • Author(s): R. Ishii, Y. Koyama, M. Funato, and Y. Kawakami
  • Organizer: 9th Asia-Pacific Workshop on Widegap Semiconductors
  • Int'l Joint Research
• [Presentation] Carbon and aluminum co-treatment at high temperatures for surface p-type conduction of AlN (2019)
  • Author(s): K. Kishimoto, M. Funato, and Y. Kawakami
  • Organizer: 9th Asia-Pacific Workshop on Widegap Semiconductors
  • Int'l Joint Research
• [Presentation] Experimental study on semipolar (-1-12-2) LEDs toward polar-plane-free faceted InGaN LEDs on (-1-12-2) (2019)
  • Author(s): Y. Matsuda, M. Funato and Y. Kawakami
  • Organizer: 9th Asia-Pacific Workshop on Widegap Semiconductors
  • Int'l Joint Research
• [Presentation] アニール処理スパッタAlN膜上AlGaN多重量子井戸構造の光学特性 (2019)
  • Author(s): 正直花奈子, 石井良太, 上杉謙次郎, 船戸充, 川上養一, 三宅秀人
  • Organizer: 第11回ナノ構造・エピタキシャル成長講演会
• [Presentation] 極性面フリーな三次元InGaN-LEDのデバイスプロセス検討 (2019)
  • Author(s): 松田祥伸, 船戸充, 川上養一
  • Organizer: 第80回応用物理学会秋季学術講演会
• [Presentation] 青色・緑色発光InGaN量子井戸構造の高温環境下における顕微PLマッピング (2019)
  • Author(s): 石井良太, 小山友二, 船戸充, 川上養一
  • Organizer: 第80回応用物理学会秋季学術講演会
• [Presentation] Study of luminescence properties of InGaN layers with wide-range lateral indium content profiling (2019)
  • Author(s): A. Kafar, R. Ishii, S .Stanczyk, K. Gibasiewicz, S. Grzanka, T. Suski, P. Perlin, M. Funato and Y. Kawakami
  • Organizer: 第80回応用物理学会秋季学術講演会
• [Presentation] InGaN/GaN多重量子井戸における表面プラズモン増強の温度依存性 (2019)
  • Author(s): 村尾文弥, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
  • Organizer: 第80回応用物理学会秋季学術講演会
• [Presentation] 深紫外近接場光学顕微鏡の開発とAlリッチAlGaN系特異構造のPLマッピング評価 (2019)
  • Author(s): 石井良太, 船戸充, 川上養一
  • Organizer: 第６６回応用物理学会春季学術講演会
  • Invited
• [Presentation] カーボン添加によるAlN表面におけるp型伝導制御 (2019)
  • Author(s): 岸元克浩, 船戸充, 川上養一
  • Organizer: 第６６回応用物理学会春季学術講演会
• [Presentation] 圧電素子を用いた光音響分光測定系の構築によるGaNの支配的な非輻射再結合過程の評価 (2019)
  • Author(s): 山崎一人, 石井良太, 船戸充, 川上養一
  • Organizer: 第６６回応用物理学会春季学術講演会
• [Presentation] 有機金属気相成長したGaN/AlN極薄量子井戸構造の光学的特性 (2019)
  • Author(s): 小林敬嗣, 市川修平, 船戸充, 川上養一
  • Organizer: 第６６回応用物理学会春季学術講演会
• [Presentation] 極性面フリーな三次元InGaN-LED構造の結晶成長と評価 (2019)
  • Author(s): 松田祥伸, 船戸充, 川上養一
  • Organizer: 第６６回応用物理学会春季学術講演会
• [Presentation] InGaN/GaN多重量子井戸の表面プラズモン侵入長を超えた発光増強 (2019)
  • Author(s): 村尾文弥, 中村俊樹, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
  • Organizer: 第６６回応用物理学会春季学術講演会
• [Presentation] Ultrathin GaN/AlN quantum wells fabricated with a self-limiting process (2018)
  • Author(s): M. Funato, S. Ichikawa, and Y. Kawakami
  • Organizer: 19th Intern. Conf. on MOVPE
  • Int'l Joint Research
• [Presentation] Growth evolution of polar-plane-free faceted GaN structures (2018)
  • Author(s): Y. Matsuda, M. Funato, and Y. Kawakami
  • Organizer: 19th Intern. Conf. on MOVPE
  • Int'l Joint Research
• [Presentation] Nitride-based 3D- structures for polychromatic LEDs (2018)
  • Author(s): Y. Kawakami
  • Organizer: 16th International Symposium on the Science and Technology of Lighting
  • Int'l Joint Research / Invited
• [Presentation] Control of carrier recombination processes in AlGaN-based UV emitters (2018)
  • Author(s): M. Funato and Y. Kawakami
  • Organizer: SPIE Nanoscience + Engineering
  • Int'l Joint Research / Invited
• [Presentation] Development of a deep-ultraviolet scanning nearfield optical microscope for nano-spectroscopic characterizations of AlxGa1-xN (x : 0 - 1) active layers (2018)
  • Author(s): R. Ishii, M. Funato and Y. Kawakami
  • Organizer: International Workshop on Nitride Semiconductors
  • Int'l Joint Research / Invited
• [Presentation] Micro-photoluminescence mapping of surface plasmon coupled emission from InGaN/GaN quantum wells (2018)
  • Author(s): K. Okamoto, K. Tateishi, K. Tamada, M. Funato and Y. Kawakami
  • Organizer: International Workshop on Nitride Semiconductors
  • Int'l Joint Research
• [Presentation] Polar-plane-free faceted InGaN quantum wells toward highly radiative pastel and white color syntheses (2018)
  • Author(s): Y. Matsuda, M. Funato and Y. Kawakami
  • Organizer: International Workshop on Nitride Semiconductors
  • Int'l Joint Research
• [Presentation] Self-limiting growth and optical properties of ultrathin GaN/AlN quantum wells (2018)
  • Author(s): H. Kobayashi, S. Ichikawa, M. Funato and Y. Kawakami
  • Organizer: International Workshop on Nitride Semiconductors
  • Int'l Joint Research
• [Presentation] Controlling p-type conductivity at AlN surfaces (2018)
  • Author(s): K. Kishimoto, M. Funato and Y. Kawakami
  • Organizer: International Workshop on Nitride Semiconductors,
  • Int'l Joint Research
• [Presentation] Red-emitting InGaN quantum wells grown on In0.17Ga0.83N templates lattice-matched to ScMgAlO4 substrates (2018)
  • Author(s): K. Maehara, T. Ozaki, M. Funato and Y. Kawakami
  • Organizer: International Workshop on Nitride Semiconductors
  • Int'l Joint Research
• [Presentation] 極性面フリーな三次元InGaN量子井戸を用いた混合色合成と制御 (2018)
  • Author(s): 松田祥伸,船戸充, 川上養一
  • Organizer: 第10回ナノ構造・エピタキシャル成長講演会
• [Presentation] AlGaN系ステップバンチング特異構造からの高効率発光現象 (2018)
  • Author(s): 川上養一, 早川峰洋, 船戸充
  • Organizer: 第７９回応用物理学会秋季学術講演会
  • Invited
• [Presentation] 極性面フリー三次元InGaN量子井戸を用いたパステルカラー・白色合成 (2018)
  • Author(s): 松田祥伸, 船戸充, 川上養一
  • Organizer: 第７９回応用物理学会秋季学術講演会
• [Presentation] 表面プラズモンによるInGaN/GaN多層量子井戸への発光増強効果 (2018)
  • Author(s): 村尾文弥, 中村俊樹, 松山哲也, 和田 健司, 船戸充, 川上養一, 岡本晃一
  • Organizer: 第７９回応用物理学会秋季学術講演会
• [Presentation] GaN/AlN極薄膜量子井戸の作製と偏光特性 (2018)
  • Author(s): 船戸充, 市川修平, 川上養一
  • Organizer: 電子情報通信学会
• [Presentation] 極性面フリーな三次元InGaN量子井戸からの輻射再結合寿命が短いパステルグリーン発光 (2018)
  • Author(s): 松田祥伸, 船戸充, 川上養一
  • Organizer: 第1回結晶工学 ISYSE合同研究会
• [Presentation] AlN表面におけるp型伝導の制御 (2018)
  • Author(s): 岸元克浩, 船戸充, 川上養一
  • Organizer: 第1回結晶工学 ISYSE合同研究会
• [Presentation] In0.17Ga0.83N/ScMgAlO4テンプレート上に作製した赤色発光InxGa1-xN/In0.17Ga0.83N量子井戸構造 (x > 0.17) (2018)
  • Author(s): 前原圭汰, 尾崎拓也, 船戸充, 川上養一
  • Organizer: 第1回結晶工学 ISYSE合同研究会
• [Presentation] GaN系3次元構造による多波長発光素子の開発 (2018)
  • Author(s): 川上養一
  • Organizer: The 28th Meeting on Glasses for Photonics, Kyoto University
  • Invited
• [Presentation] 深紫外CW・時間分解PL分光法による12C/13C超格子の光学特性評価 (2018)
  • Author(s): 石井良太, 鹿田真一, 寺地徳之, 神田久生, 渡邊幸志, 船戸充, 川上養一
  • Organizer: 第65回応用物理学会春季学術講演会, 早稲田大学
• [Presentation] EVPE法で成長したAlN膜におけるp型伝導 (2018)
  • Author(s): 岸元克浩, 船戸充,川上養一
  • Organizer: 第65回応用物理学会春季学術講演会, 早稲田大学
• [Presentation] 微傾斜c-AlN基板上AlGaN量子井戸におけるマクロステップを利用した高効率発光 (2018)
  • Author(s): 早川峰洋, 市川修平, 船戸充,川上養一
  • Organizer: 第65回応用物理学会春季学術講演会, 早稲田大学
• [Presentation] AlGaN微細構造の二次元アレイによるブロードバンドUV発光 (2018)
  • Author(s): 片岡研, 千賀岳人, 船戸充, 川上養一
  • Organizer: 第65回応用物理学会春季学術講演会, 早稲田大学
• [Presentation] Impact of InGaN epitaxy lattice matched to ScAlMgO4 substrates on future photonic devices (2017)
  • Author(s): Y. Kawakami, T. Ozaki, and M. Funato
  • Organizer: 12th International Conference on Nitride Semiconductors, Strasbourg, France
  • Int'l Joint Research / Invited
• [Presentation] Interfacial structure control of AlN on sapphire fabricated from Al metal and N2 gas (2017)
  • Author(s): K. Kishimoto, M. Funato and Y. Kawakami
  • Organizer: 12th International Conference on Nitride Semiconductors, Strasbourg, France
  • Int'l Joint Research
• [Presentation] Polychromatic emission from semi/nonpolar faceted 3D-InGaN quantum wells with high radiative recombination probabilities (2017)
  • Author(s): Y. Matsuda, M. Funato and Y. Kawakami
  • Organizer: 12th International Conference on Nitride Semiconductors, Strasbourg, France
  • Int'l Joint Research
• [Presentation] Impact of defects on the optical characteristics of AlGaN quantum wells (2017)
  • Author(s): M. Funato and Y. Kawakami
  • Organizer: 29th International Conference on Defects in Semiconductors, Matsue, Japan
  • Int'l Joint Research / Invited
• [Presentation] An environmentally friendly method to grow AlN thick layers (2017)
  • Author(s): M. Funato and Y. Kawakami
  • Organizer: 0th Intern. Workshop on Bulk Nitride Semiconductors, Espoo, Finland
  • Int'l Joint Research / Invited
• [Presentation] Clarifying carrier recombination processes in AlGaN-based materials towards efficient DUV emitters (2017)
  • Author(s): Y. Kawakami and M. Funato
  • Organizer: International Workshop on UV Materials and Devices 2017, Fukuoka, Japan
  • Int'l Joint Research / Invited
• [Presentation] 窒化物半導体における輻射・非輻射再結合過程(Tutorial). (2017)
  • Author(s): 船戸充, 川上養一
  • Organizer: 第9回ナノ構造・エピタキシャル成長講演会，北海道大学
  • Invited
• [Presentation] AlN系三次元構造による紫外多波長発光LED (2017)
  • Author(s): 片岡研, 千賀岳人, 船戸充, 川上養一
  • Organizer: 第78回応用物理学会秋季学術講演会, 福岡国際会議場
• [Presentation] 三次元InGaN量子井戸におけるIn組成のファセット間分布に関する考察 (2017)
  • Author(s): 松田祥伸, 船戸充, 川上養一
  • Organizer: 第78回応用物理学会秋季学術講演会, 福岡国際会議場
• [Presentation] 顕微フォトルミネセンスマッピングによる表面プラズモン発光増強の評価 (2017)
  • Author(s): 立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫
  • Organizer: 第78回応用物理学会秋季学術講演会, 福岡国際会議場
• [Presentation] 深紫外CWレーザにより生成したダイヤモンド結晶中の極低温励起子に対する同位体効果 (2017)
  • Author(s): 石井良太, 鹿田真一, 寺地徳之, 神田久生, 渡邊幸志, 船戸充, 川上養一
  • Organizer: 第78回応用物理学会秋季学術講演会, 福岡国際会議場
• [Presentation] 短波長半導体発光デバイスの現状と動向 (2017)
  • Author(s): 船戸充, 川上養一
  • Organizer: 第48回アナログ技術トレンドセミナ(HAB研セミナ), 京都テルサ
  • Invited
• [Presentation] 反応性イオンエッティング技術が拓く窒化物半導体3次元構造ベース多波長発光素子 (2017)
  • Author(s): 川上養一
  • Organizer: 日本真空学会 2017年9月研究例会，主題「真空技術が切り拓く光・電子・プラズマの最先端」，愛媛大学
  • Invited
• [Presentation] Longer nonradiative lifetimes of excitons localized in AlGaN quantum wires grown on macrosteps (2017)
  • Author(s): M. Hayakawa, Y. Hayashi, S. Ichikawa, K. Kumamoto, M. Shibaoka, M. Funato and Y. Kawakami
  • Organizer: 36th Electronic Materials Symposium, Nagahama Royal Hotel
• [Presentation] Growth mechanism of polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities (2017)
  • Author(s): Y. Matsuda, M. Funato and Y. Kawakami
  • Organizer: 36th Electronic Materials Symposium, Nagahama Royal Hotel
• [Presentation] マクロステップ上AlGaN量子細線の光学特性 (2017)
  • Author(s): 早川峰洋, 林佑樹, 長瀬勇樹, 市川修平, 熊本恭介, 柴岡真美, 船戸充, 川上養一
  • Organizer: 電子情報通信学会 レーザ・量子エレクトロニクス研究会, 名古屋大学
• [Presentation] Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters (2017)
  • Author(s): Y. Matsuda, M. Funato and Y. Kawakami
  • Organizer: レーザ・量子エレクトロニクス研究会(LQE) (2017)，LQE奨励賞記念講演
  • Invited
• [Presentation] AlリッチAlGaN系量子井戸の発光・非発光過程 (2017)
  • Author(s): 川上養一, 市川修平, 船戸充
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜
  • Invited
• [Presentation] 一軸性応力下におけるダイヤモンドの微分吸収スペクトル (2017)
  • Author(s): 石井良太, 鹿田真一, 船戸充, 川上養一
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜
• [Presentation] AlN系三次元構造の形成と紫外多波長発光 (2017)
  • Author(s): 片岡研, 千賀岳人, 船戸充, 川上養一
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜
• [Presentation] 高効率白色合成に向けた極性面フリーな三次元InGaN量子井戸の作製と評価 (2017)
  • Author(s): 松田祥伸, 船戸充, 川上養一
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜
• [Presentation] EVPE成長AlN/サファイア界面におけるボイド形成メカニズムの検討 (2017)
  • Author(s): 岸元克浩, 船戸充, 川上養一
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜
• [Presentation] Design of Al-rich AlGaN quantum-well structures for efficient UV emitters (2017)
  • Author(s): M. Funato and Y. Kawakami
  • Organizer: SPIE Photonics West
  • Place of Presentation: San Francisco, USA
  • Int'l Joint Research / Invited
• [Presentation] Spatially-resolved evaluation of surface-plasmon-coupled photoluminescence-enhancement of InGaN/GaN quantum wells (2017)
  • Author(s): K. Tateishi, P. Wang, S. Ryuzaki, M. Funato, Y. Kawakami, K. Okamoto, and K. Tamada
  • Organizer: SPIE Photonics West
  • Place of Presentation: San Francisco, USA
  • Int'l Joint Research
• [Presentation] GaN系3次元マイクロファセット構造による多波長LEDの開発 (2017)
  • Author(s): 川上養一, 松田祥伸, 船戸充
  • Organizer: 照明学会固体光源分科会 研究会
  • Place of Presentation: 日本大学 理工学部 駿河台キャンパス
  • Invited
• [Presentation] AlN growth by an environmentally friendly method (2017)
  • Author(s): M. Funato and Y. Kawakami
  • Organizer: 2017 German-Japanese-Spanish joint workshop
  • Place of Presentation: Mallorca, Spain
  • Int'l Joint Research / Invited
• [Presentation] Stress-dependent spectroscopy on single-crystalline diamond (2016)
  • Author(s): R. Ishii, S. Shikata, M. Funato, and Y. Kawakami
  • Organizer: 35th Electronic Materials Symposium
  • Place of Presentation: Laforet Biwako
• [Presentation] Stimulated emission from optically-pumped semipolar AlGaN/AlN quantum well (2016)
  • Author(s): S. Ichikawa, M. Funato, and Y. Kawakami
  • Organizer: 35th Electronic Materials Symposium
  • Place of Presentation: Laforet Biwako
• [Presentation] Three dimensional semi/nonpolar InGaN quantum wells toward phosphor-free polychromatic emitters (2016)
  • Author(s): Y. Matsuda, M. Funato, and Y. Kawakami
  • Organizer: 35th Electronic Materials Symposium
  • Place of Presentation: Laforet Biwako
• [Presentation] Evolution of strain and dislocations during ESVPE growth of AlN (2016)
  • Author(s): K. Kishimoto, P.-T. Wu, M. Funato, and Y. Kawakami
  • Organizer: 35th Electronic Materials Symposium
  • Place of Presentation: Laforet Biwako
• [Presentation] EVPE法によるAlN/サファイア界面構造の制御 (2016)
  • Author(s): 岸元克浩，P.-T. Wu, 船戸充, 川上養一
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ
• [Presentation] 半極性面AlGaN/AlN量子井戸におけるポテンシャル揺らぎの抑制 (2016)
  • Author(s): 市川修平, 船戸充, 川上養一
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ
• [Presentation] ScAlMgO4 (0001)基板上InGaN薄膜における格子整合近傍での組成引き込み効果 (2016)
  • Author(s): 尾崎拓也, 船戸充, 川上養一
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ
• [Presentation] nGaN系量子井戸の表面プラズモン発光増強現象の空間分解評価 (2016)
  • Author(s): 立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ
• [Presentation] 極性面フリーなInGaNマルチファセット構造を用いた多色発光の実現 (2016)
  • Author(s): 松田祥伸, 船戸充, 川上養一
  • Organizer: 電子情報通信学会
  • Place of Presentation: 京大桂キャンパス
• [Presentation] クリーンプロセスによるAlNバルク結晶の成長 (2016)
  • Author(s): 岸元克浩, 呉珮岑, 船戸充, 川上養一
  • Organizer: 電子情報通信学会
  • Place of Presentation: 京大桂キャンパス
• [Presentation] Unveiling the carrier recombination paths in high Al content AlGaN quantum wells (2016)
  • Author(s): M. Funato, and Y. Kawakami
  • Organizer: Intern. Workshop on UV Materials and Devices
  • Place of Presentation: Beijing, China
  • Int'l Joint Research / Invited
• [Presentation] Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surfaces (2016)
  • Author(s): M. Hayakawa, Y. Hayashi, S. Ichikawa, M. Funato, and Y. Kawakami
  • Organizer: SPIE Nanoscience + Engineering,
  • Place of Presentation: San Diego
  • Int'l Joint Research
• [Presentation] Radiative and nonradiative recombination processes in AlGaN-based quantum wells (2016)
  • Author(s): Y. Kawakami and M. Funato
  • Organizer: Intern. Workshop on Nitride Semiconductors
  • Place of Presentation: Orlando, USA
  • Int'l Joint Research / Invited
• [Presentation] Stimulated emission at 250 nm from optically-pumped semipolar (1-102) AlGaN/AlN quantum wells (2016)
  • Author(s): S. Ichikawa, M. Funato, and Y. Kawakami
  • Organizer: Intern. Workshop on Nitride Semiconductors
  • Place of Presentation: Orlando, USA
• [Presentation] Compositional pulling effect of InGaN films grown on ScAlMgO4 (0001) substrates by metal-organic vapor phase epitaxy (2016)
  • Author(s): T.Ozaki, M.Funato, and Y.Kawakami
  • Organizer: Intern. Workshop on Nitride Semiconductors
  • Place of Presentation: Orlando, USA
  • Int'l Joint Research
• [Presentation] 非極性面上に作製したAlGaN量子井戸の発光特性 (2016)
  • Author(s): 船戸充, 川上養一
  • Organizer: 光とレーザーの科学技術フェア2016, 紫外線セミナー
  • Place of Presentation: 科学技術館（東京都千代田区北の丸公園２番１号）
• [Presentation] AlリッチAlGaN量子井戸のMOVPE成長と光物性制 (2016)
  • Author(s): 川上養一, 市川修平, 船戸充
  • Organizer: 一般社団法人 電子情報技術産業協会, 第12回 量子現象利用デバイス技術分科会
  • Place of Presentation: 大手センタービル
  • Invited
• [Remarks] 「特異構造の結晶科学」HPへのリンク
  • URL: http://www.optomater.kuee.kyoto-u.ac.jp/