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Spatio-time-resolved cathodoluminescence studies on singularity crystals

Planned Research

Project AreaMaterials Science and Advanced Elecronics created by singularity
Project/Area Number 16H06427
Research Category

Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionTohoku University

Principal Investigator

Chichibu Shigefusa  東北大学, 多元物質科学研究所, 教授 (80266907)

Co-Investigator(Kenkyū-buntansha) 小島 一信  東北大学, 多元物質科学研究所, 准教授 (30534250)
嶋 紘平  東北大学, 多元物質科学研究所, 助教 (40805173)
中須 大蔵  東北大学, 多元物質科学研究所, 助教 (40801254)
Project Period (FY) 2016-06-30 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥50,960,000 (Direct Cost: ¥39,200,000、Indirect Cost: ¥11,760,000)
Fiscal Year 2020: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
Fiscal Year 2019: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
Fiscal Year 2018: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
Fiscal Year 2017: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
Fiscal Year 2016: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
Keywords時間空間同時分解分光 / フェムト秒電子銃 / 光物性 / 特異構造 / 結晶工学 / 結晶成長 / フェムト秒励起 / 時間分解 / 空間分解 / AlInN
Outline of Final Research Achievements

Singular structures containing imperfections and/or inhomogeneity form heterostructures with the bulk and the surface. In order to probe local luminescence dynamics in such singularities embedded in wide bandgap semiconductors (WBGSs), spatio-time-resolved cathodoluminescence (STRCL), which uses a femtosecond-laser-driven pulsed photoelectron gun instead of cw electron gun of spatially resolved cathodoluminescence (CL) equipped on scanning electron microscopy (SEM), is an attractive tool. In this work, technical advantages were offered on the spatial and temporal resolutions of our STRCL system, and then local luminescence dynamics in designed, self-formed, and accidentally formed WBGS singularity structures fabricated by other research groups within this academic area such as GaN, InGaN, AlInN, AlN, and BN were successfully characterized.

Academic Significance and Societal Importance of the Research Achievements

完全結晶や完全構造体では発現しない機能を呈する「特異構造」における局所キャリア緩和・発光機構を解明する技術を開発し実証できた事により、新奇光・電子デバイスの実現に有用な光物性研究が可能になった。具体的には、高純度やMgイオン注入されたGaN、InGaN量子殻、AlInN自然超格子、高温アニールされたスパッタAlN、六方晶BN等の時間空間同時分解カソードルミネッセンス計測によりそれら特異構造における物性的特徴を明らかにした。それらの材料はデバイス作製フェーズへと進展しており、工学・理学の両側面において貢献できたと考えられる。今後も、本研究で構築した装置を用いた光物性研究の成果が期待される。

Report

(6 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • Research Products

    (169 results)

All 2021 2020 2019 2018 2017 2016 Other

All Int'l Joint Research (5 results) Journal Article (29 results) (of which Int'l Joint Research: 7 results,  Peer Reviewed: 29 results,  Open Access: 10 results,  Acknowledgement Compliant: 4 results) Presentation (129 results) (of which Int'l Joint Research: 58 results,  Invited: 47 results) Book (1 results) Remarks (5 results)

  • [Int'l Joint Research] Universitaet der Bundeswehr Muenchen/Technische Universitaet Muenchen(ドイツ)

    • Related Report
      2020 Annual Research Report
  • [Int'l Joint Research] Institute of High Pressure Physics(ポーランド)

    • Related Report
      2020 Annual Research Report
  • [Int'l Joint Research] North Carolina State University/Adroit Materials Inc.(米国)

    • Related Report
      2019 Annual Research Report
  • [Int'l Joint Research] Institute. of Appl. Phys. and Metrology/Technische Universitat Munchen(ドイツ)

    • Related Report
      2019 Annual Research Report
  • [Int'l Joint Research] Universitat der Bundeswehr/Technische Universitaet Muenchen(Germany)

    • Related Report
      2017 Annual Research Report
  • [Journal Article] Self-organized micro-light-emitting diode structure for high-speed solar-blind optical wireless communications2020

    • Author(s)
      K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, A. Hirano, Y. Nagasawa, M. Ippommatsu, and S. F. Chichibu
    • Journal Title

      Applied Physics Letters

      Volume: 117 (3) Issue: 3 Pages: 0311031-4

    • DOI

      10.1063/5.0013112

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams2020

    • Author(s)
      Akira Uedono, Kanako Shojiki, Kenjiro Uesugi, Shigefusa F Chichibu, Shoji Ishibashi, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, Hideto Miyake
    • Journal Title

      J. Appl. Phys.

      Volume: 128 Issue: 8 Pages: 085704-085704

    • DOI

      10.1063/5.0015225

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Temperature dependence of internal quantum efficiency of radiation for the near-band-edge emission of GaN crystals quantified by omnidirectional photoluminescence spectroscopy2020

    • Author(s)
      K. Kojima, K. Ikemura, and S. F. Chichibu
    • Journal Title

      Applied Physics Express

      Volume: 13 (10) Issue: 10 Pages: 1055041-4

    • DOI

      10.35848/1882-0786/abb788

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Urbach-Martienssen tail as the origin of the two-peak structure in the photoluminescence spectra for the near-band-edge emission of a freestanding GaN crystal observed by omnidirectional photoluminescence spectroscopy2020

    • Author(s)
      K. Kojima and S. F. Chichibu
    • Journal Title

      Applied Physics Letters

      Volume: 117 (17) Issue: 17 Pages: 1711031-5

    • DOI

      10.1063/5.0028134

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Self-formed compositional superlattices triggered by cation orderings in m-plane Al1-xInxN on GaN2020

    • Author(s)
      Chichibu Shigefusa F.、Shima Kohei、Kojima Kazunobu、Kangawa Yoshihiro
    • Journal Title

      Scientific Reports

      Volume: 10 Issue: 1 Pages: 185701-11

    • DOI

      10.1038/s41598-020-75380-3

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Correlation between the internal quantum efficiency and photoluminescence lifetime of the near-band-edge emission in a ZnO single crystal grown by the hydrothermal method2020

    • Author(s)
      K. Kojima and S. F. Chichibu
    • Journal Title

      Applied Physical Express

      Volume: 13 (12) Issue: 12 Pages: 1210051-5

    • DOI

      10.35848/1882-0786/abcd73

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals2020

    • Author(s)
      K. Kojima, F. Horikiri, Y. Narita, T. Yoshida, H. Fujikura, and S. F. Chichibu
    • Journal Title

      Applied Physics Express

      Volume: 13 (1) Issue: 1 Pages: 0120041-4

    • DOI

      10.7567/1882-0786/ab5adc

    • NAID

      210000157633

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Spatio-time-resolved cathodoluminescence studies of wide-bandgap group-III nitride semiconductors2020

    • Author(s)
      S. F. Chichibu, Y. Ishikawa, K. Hazu, and K. Furusawa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 (2) Issue: 2 Pages: 0205011-17

    • DOI

      10.7567/1347-4065/ab5ef4

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors2020

    • Author(s)
      S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono
    • Journal Title

      Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), Gallium Nitride Materials and Devices XV, Edited by H. Fujioka, H. Morkoc, and U. T. Schwarz

      Volume: 11280 Pages: 10-10

    • DOI

      10.1117/12.2545409

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy2020

    • Author(s)
      A. Uedono, M. Dickmann, W. Egger, C. Hugenschmidt, S. Ishibashi, and S. F. Chichibu
    • Journal Title

      Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), Gallium Nitride Materials and Devices XV, Edited by H. Fujioka, H. Morkoc, and U. T. Schwarz

      Volume: 11280 Pages: 11-11

    • DOI

      10.1117/12.2541518

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures2019

    • Author(s)
      Chichibu Shigefusa F.、Shima Kohei、Kojima Kazunobu、Takashima Shin-ya、Ueno Katsunori、Edo Masaharu、Iguchi Hiroko、Narita Tetsuo、Kataoka Keita、Ishibashi Shoji、Uedono Akira
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SC Pages: SC0802-SC0802

    • DOI

      10.7567/1347-4065/ab0d06

    • NAID

      210000156122

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Quantification of the quantum efficiency of radiation of a freestanding GaN crystal placed outside an integrating sphere2019

    • Author(s)
      K. Kojima, K. Ikemura, and S. F. Chichibu
    • Journal Title

      Applied Physics Express

      Volume: 12 (6) Issue: 6 Pages: 0620101-4

    • DOI

      10.7567/1882-0786/ab2165

    • NAID

      210000156009

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams2019

    • Author(s)
      Uedono Akira、Iguchi Hiroko、Narita Tetsuo、Kataoka Keita、Egger Werner、Koschine T?njes、Hugenschmidt Christoph、Dickmann Marcel、Shima Kohei、Kojima Kazunobu、Chichibu Shigefusa F.、Ishibashi Shoji
    • Journal Title

      physica status solidi (b)

      Volume: 256 Issue: 10 Pages: 1900104-1900104

    • DOI

      10.1002/pssb.201900104

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Internal quantum efficiency of radiation in a bulk CH3NH3PbBr3 perovskite crystal quantified by using the omnidirectional photoluminescence spectroscopy2019

    • Author(s)
      K. Kojima, K. Ikemura, K. Matsumori, Y. Yamada, Y. Kanemitsu, and S. F. Chichibu
    • Journal Title

      APL Materials

      Volume: 7 Issue: 7 Pages: 0711161-6

    • DOI

      10.1063/1.5110652

    • NAID

      120006712292

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film2019

    • Author(s)
      S. F. Chichibu, K. Kojima, K. Hazu, Y. Ishikawa, K. Furusawa, S. Mita, R. Collazo, Z. Sitar, and A. Uedono
    • Journal Title

      Applied Physics Letters

      Volume: 115 (15) Issue: 15 Pages: 1519031-5

    • DOI

      10.1063/1.5116900

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes2019

    • Author(s)
      K. Shima, K. Kojima, A. Uedono, and S. F. Chichibu
    • Journal Title

      Proceedings of IWJT2019: IEEE Xplore Digital Library

      Volume: none Pages: 1-4

    • DOI

      10.23919/iwjt.2019.8802886

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps2019

    • Author(s)
      K. Kojima, Y. Nagasawa, A. Hirano, M. Ippommatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu
    • Journal Title

      Applied Physics Letters

      Volume: 114 Issue: 1 Pages: 0111021-5

    • DOI

      10.1063/1.5063735

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate2018

    • Author(s)
      Chichibu S. F.、Shima K.、Kojima K.、Takashima S.、Edo M.、Ueno K.、Ishibashi S.、Uedono A.
    • Journal Title

      Applied Physics Letters

      Volume: 112 Issue: 21 Pages: 211901-211901

    • DOI

      10.1063/1.5030645

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Room-temperature photoluminescence lifetime for the near-band-edge emission of (000-1) p-type GaN fabricated by sequential ion-implantation of Mg and H2018

    • Author(s)
      Shima K.、Iguchi H.、Narita T.、Kataoka K.、Kojima K.、Uedono A.、Chichibu S. F.
    • Journal Title

      Applied Physics Letters

      Volume: 113 Issue: 19 Pages: 191901-191901

    • DOI

      10.1063/1.5050967

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals2018

    • Author(s)
      Chichibu Shigefusa F.、Ishikawa Youichi、Kominami Hiroko、Hara Kazuhiko
    • Journal Title

      Journal of Applied Physics

      Volume: 123 Issue: 6 Pages: 065104-065104

    • DOI

      10.1063/1.5021788

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN2018

    • Author(s)
      Chichibu S. F.、Uedono A.、Kojima K.、Ikeda H.、Fujito K.、Takashima S.、Edo M.、Ueno K.、Ishibashi S.
    • Journal Title

      Journal of Applied Physics

      Volume: 123 Issue: 16 Pages: 161413-161413

    • DOI

      10.1063/1.5012994

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer2017

    • Author(s)
      H. Nakai, M. Sugiyama, S. F. Chichibu
    • Journal Title

      Applied Physics Letter

      Volume: 110 Issue: 18 Pages: 181102-181102

    • DOI

      10.1063/1.4982653

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate2017

    • Author(s)
      Kazunobu Kojima;Shinya Takashima;Masaharu Edo;Katsunori Ueno;Mitsuaki Shimizu;Tokio Takahashi;Shoji Ishibashi;Akira Uedono;Shigefusa F. Chichibu
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 6 Pages: 0610021-4

    • DOI

      10.7567/apex.10.061002

    • NAID

      210000135863

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Demonstration of omnidirectional photoluminescence (ODPL) spectroscopy for precise determination of internal quantum efficiency of radiation in GaN single crystals2017

    • Author(s)
      Kojima Kazunobu、Ikeda Hirotaka、Fujito Kenji、Chichibu Shigefusa F.
    • Journal Title

      Applied Physics Letters

      Volume: 111 Issue: 3 Pages: 032111-032111

    • DOI

      10.1063/1.4995398

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams2017

    • Author(s)
      Uedono Akira、Takashima Shinya、Edo Masaharu、Ueno Katsunori、Matsuyama Hideaki、Egger Werner、Koschine Tonjes、Hugenschmidt Christoph、Dickmann Marcel、Kojima Kazunobu、Chichibu Shigefusa F.、Ishibashi Shoji
    • Journal Title

      Phys. Stat. Sol. B

      Volume: 2017 Issue: 4 Pages: 1700521-1700521

    • DOI

      10.1002/pssb.201700521

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high AlN mole fraction AlxGa1-xN multiple quantum wells2017

    • Author(s)
      K. Kojima, K. Furusawa, Y. Yamazaki, H. Miyake, K. Hiramatsu, and S. F. Chichibu
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 1 Pages: 0158021-4

    • DOI

      10.7567/apex.10.015802

    • NAID

      210000135740

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Defect-resistant radiative performance of m-plane immiscible Al1-xInxN epitaxial nanostructures for deep-ultraviolet and visible polarized-light emitters2017

    • Author(s)
      S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
    • Journal Title

      Advanced Materials

      Volume: 29 Issue: 5 Pages: 16036441-9

    • DOI

      10.1002/adma.201603644

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate2017

    • Author(s)
      K. Kojima, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, A. Uedono,S. F. Chichibu
    • Journal Title

      Applied Physics Express

      Volume: 11

    • NAID

      210000135863

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer2017

    • Author(s)
      H. Nakai, M. Sugiyama, and S. F. Chichibu
    • Journal Title

      Applied Physics Letters

      Volume: 印刷中

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] Current progress of omnidirectional photoluminescence spectroscopy for the quantification of quantum efficiency of radiation in GaN crystals2021

    • Author(s)
      K. Kojima, K. Ikemura, and S. F. Chichibu
    • Organizer
      The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2021, OPTO, Gallium Nitride Materials and Devices XV (OE107)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam2021

    • Author(s)
      A. Uedono, H. Sakurai, T. Narita, K. Sierakowski, M. Bockowski, J. Suda, S. Ishibashi, S. F. Chichibu, and T. Kachi
    • Organizer
      The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2021, OPTO, Gallium Nitride Materials and Devices XV (OE107)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Striped and fin-shaped cation orderings and self-formed compositional superlattices in an m-plane Al0.7In0.3N on GaN heterostructure2021

    • Author(s)
      S. F. Chichibu, K. Shima, K. Kojima, and Y. Kangawa
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Vacancies in AlN deposited by radio-frequency sputtering and MOVPE studied by positron annihilation spectroscopy2021

    • Author(s)
      A. Uedono, K. Shojiki, K. Uesugi, S. F. Chichibu, S. Ishibash, M. Dickmann, W. Egger, C. Hugenschmidt, and H. Miyake
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Macroscopically homogeneous cathodoluminescence mapping images of c-plane nearly lattice-matched Al1-xInxN films on a GaN substrate2021

    • Author(s)
      L. Y. Li, K. Shima, M. Yamanaka, K. Kojima, T. Egawa, T. Takeuchi, M. Miyoshi, and S. F. Chichibu
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Cathodoluminescence studies of AlN epilayers grown by MOVPE on sputtered AlN templates annealed at high temperature2021

    • Author(s)
      K. Shima, T. Kasuya, K. Shojiki, K. Uesugi, K. Kojima, A. Uedono, H. Miyake, and S. F. Chichibu
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Omnidirectional photoluminescence (ODPL) spectroscopy for the quantification of quantum efficiency of radiation in GaN crystals2021

    • Author(s)
      K. Kojima and S. F. Chichibu
    • Organizer
      Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Self-formed compositional superlattices triggered by cation orderings in m-plane Al1-xInxN on GaN2021

    • Author(s)
      S. F. Chichibu, K, Shima, K. Kojima, and Y. Kangawa
    • Organizer
      Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] (Al,Ga,In)Nの輻射・非輻射再結合過程に点欠陥が及ぼす影響2021

    • Author(s)
      秩父重英,嶋紘平,小島一信,上殿明良,石橋章司
    • Organizer
      日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会 第121回研究会(第五期総括記念研究会)
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] 深紫外AlGaN LEDを用いたギガビット級ソーラーブラインド光無線通信2021

    • Author(s)
      小島一信,吉田悠来,白岩雅輝,淡路祥成,菅野敦史,山本直克,平野光,長澤陽祐,一本松正道,秩父重英
    • Organizer
      電子情報通信学会総合大会 光エレクトロニクス(OPE)セッション
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] InGaN/GaN多重量子殻の時間空間分解カソードルミネッセンス評価2021

    • Author(s)
      嶋紘平,Weifang Lu,小島一信,上山智,竹内哲也,秩父重英
    • Organizer
      2021年春季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 格子整合系c面AlInN/GaNヘテロ構造のルミネッセンス評価2021

    • Author(s)
      李リヤン,嶋紘平,山中瑞樹,小島一信,江川孝志,竹内哲也,三好実人,秩父重英
    • Organizer
      2021年春季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 低圧酸性アモノサーマル成長バルクGaN結晶のルミネッセンス評価2021

    • Author(s)
      嶋紘平,栗本浩平,包全喜,三川豊,小島一信,石黒徹,秩父重英
    • Organizer
      2021年春季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Mgイオン注入後の空孔ガイド拡散法により形成したp型GaNのルミネッセンス評価2021

    • Author(s)
      嶋紘平,田中亮,高島信也,上野勝典,江戸雅晴,小島一信,上殿明良,秩父重英
    • Organizer
      2021年春季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 陽電子消滅によるスパッタ堆積AlN薄膜中の空孔型欠陥検出2021

    • Author(s)
      上殿明良,正直花奈子,上杉謙次郎,秩父重英,石橋章司,M. Dickmann, W. Egger, C. Hugenschmidt,三宅秀人
    • Organizer
      2021年春季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] AlN単結晶上にHVPE成長させたSi添加AlN基板の発光特性2021

    • Author(s)
      秩父重英,嶋紘平,小島一信, B. Moody,三田清二,R. Collazo, Z. Sitar,熊谷義直,上殿明良
    • Organizer
      2021年春季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Characterization of a self-organized deep-ultraviolet micro-light-emitting diode structure for high-speed solar-blind optical wireless communications2020

    • Author(s)
      K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, A. Hirano, Y. Nagasawa, M. Ippommatsu, and S. F. Chichibu
    • Organizer
      Conference on Lasers and Electro-Optics (CLEO) 2020, Laser Science to Photonic Applications, Session Free-Space & Underwater Communication
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 全方位フォトルミネセンス計測:新しい評価技術2020

    • Author(s)
      小島一信, 秩父重英
    • Organizer
      日本学術振興会光電相互変換第125委員会第250回記念研究会「新しい光電変換材料・評価法」
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] 陽電子を用いた超高圧焼鈍によるイオン注入GaNの欠陥回復特性の研究2020

    • Author(s)
      上殿明良,櫻井秀樹,成田哲生,Sierakowski Kacper,Bockowski Michal,須田淳,石橋章司,嶋紘平,秩父重英,加地徹
    • Organizer
      第49回結晶成長国内会議(JCCG-49), シンポジウム「窒化物半導体における不純物制御」
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] 陽電子消滅法によるMgイオン注入GaNの空孔型欠陥の焼鈍特性及び欠陥によるキャリア捕獲の研究2020

    • Author(s)
      上殿明良,高島信也,江戸雅晴,上野勝典,松山秀昭,Marcel Dickmann,Werner Egger,Christoph Hugenschmidt, 嶋紘平,小島一信,秩父重英,石橋章司
    • Organizer
      応用物理学会 先進パワー半導体分科会 第7回個別討論会「GaN p 型イオン注入」
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] AlNおよび高AlNモル分率AlGaN混晶におけるAl空孔複合体の役割2020

    • Author(s)
      秩父重英,嶋紘平,小島一信,三宅秀人,上殿明良
    • Organizer
      応用物理学会結晶工学分科会,応用電子物性分科会との連携研究例会「紫外材料・デバイス開発の最前線」
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] 時間空間分解カソードルミネッセンス法によるワイドバンドギャップ窒化物半導体の評価2020

    • Author(s)
      秩父重英
    • Organizer
      日本学術振興会放射線科学とその応用第186委員会第36回研究会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] c面エピタキシャルAl0.82In0.18N/GaN構造の空間分解カソードルミネッセンス2020

    • Author(s)
      李リヤン,嶋紘平,山中瑞樹,小島一信,江川孝志,竹内哲也,三好実人,秩父重英
    • Organizer
      日本結晶成長学会 ナノ構造エピタキシャル成長分科会,「第12回ナノ構造・エピタキシャル成長講演会」
    • Related Report
      2020 Annual Research Report
  • [Presentation] スパッタAlN上にMOVPE成長させたAlN薄膜のカソードルミネッセンス評価2020

    • Author(s)
      粕谷拓生,嶋紘平,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
    • Organizer
      日本結晶成長学会 ナノ構造エピタキシャル成長分科会,「第12回ナノ構造・エピタキシャル成長講演会」
    • Related Report
      2020 Annual Research Report
  • [Presentation] 全方位フォトルミネセンス分光にて観測される双峰性スペクトルの起源2020

    • Author(s)
      小島一信,秩父重英
    • Organizer
      2020年秋季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 全方位フォトルミネッセンス(ODPL)分光法によるGaNウェハの発光量子効率マッピング評価2020

    • Author(s)
      池村賢一郎,小島一信,秩父重英,堀切文正
    • Organizer
      2020年秋季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(4)2020

    • Author(s)
      秩父重英,嶋紘平,稲富悠也,小島一信,寒川義裕
    • Organizer
      2020年秋季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] GaNに格子整合するc面AlInN薄膜の空間分解カソードルミネッセンス2020

    • Author(s)
      李リヤン,嶋紘平,山中瑞樹,小島一信,江川孝志,竹内哲也,三好実人,秩父重英
    • Organizer
      2020年秋季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 高温アニールスパッタAlN上にMOVPE成長させたAlNの陰極線蛍光評価(1)2020

    • Author(s)
      嶋紘平,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
    • Organizer
      2020年秋季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 高温アニールスパッタAlN上にMOVPE成長させたAlNの陰極線蛍光評価(2)2020

    • Author(s)
      粕谷拓生,嶋紘平,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
    • Organizer
      2020年秋季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] GaN結晶の輻射量子効率と炭素不純物濃度の相関2020

    • Author(s)
      小島一信,堀切文正,成田好伸,吉田丈洋,藤倉序章,秩父重英
    • Organizer
      2020年秋季応用物理学会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors2020

    • Author(s)
      S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono
    • Organizer
      The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2020, OPTO, Gallium Nitride Materials and Devices XV (OE107)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy2020

    • Author(s)
      A. Uedono, M. Dickmann, W. Egger, C. Hugenschmidt, S. Ishibashi, and S. F. Chichibu
    • Organizer
      The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2020, OPTO, Gallium Nitride Materials and Devices XV (OE107
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] GaN結晶の輻射量子効率に対して炭素不純物および非輻射再結合中心が及ぼす影響2020

    • Author(s)
      小島一信,堀切文正,成田好伸,吉田丈洋,藤倉序章,秩父重英
    • Organizer
      2020年春季応用物理学会
    • Related Report
      2019 Annual Research Report
  • [Presentation] MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(3)-断面CL-2020

    • Author(s)
      秩父重英,嶋紘平,小島一信
    • Organizer
      2020年春季応用物理学会
    • Related Report
      2019 Annual Research Report
  • [Presentation] GaNに格子整合するc面AlInN薄膜の空間分解陰極線ルミネッセンス2020

    • Author(s)
      李リヤン,嶋紘平,山中瑞樹,小島一信,江川孝志,竹内哲也,三好実人,秩父重英
    • Organizer
      2020年春季応用物理学会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(1)2020

    • Author(s)
      嶋紘平,中須大蔵,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
    • Organizer
      2020年春季応用物理学会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(2)2020

    • Author(s)
      中須大蔵,嶋紘平,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
    • Organizer
      2020年春季応用物理学会
    • Related Report
      2019 Annual Research Report
  • [Presentation] PVT成長AlN上にHVPE成長させたSi添加AlN基板の陰極線蛍光評価2020

    • Author(s)
      秩父重英,嶋紘平,小島一信,Baxter Moody,三田清二,Ramon Collazo,Zlatko Sitar,熊谷義直,上殿明良
    • Organizer
      2020年春季応用物理学会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 深紫外AlGaN発光ダイオードとマルチピクセルフォトンカウンタを用いたソーラーブラインド帯モバイル光無線通信2020

    • Author(s)
      小島一信,吉田悠来,白岩雅輝,淡路祥成,菅野敦史,山本直克,平野光,長澤陽祐,一本松正道,秩父重英
    • Organizer
      2020年春季応用物理学会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Improvement in the luminescence property of hexagonal boron nitride grown by CVD on a c-plane sapphire substrate2019

    • Author(s)
      K. Hara, N. Umehara, K. Shima, K. Kojima, and S. F. Chichibu
    • Organizer
      The 4th International Conference on Physics of 2D Crystals (ICP2C4)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Impact of vacancy complexes on the nonradiative recombination processes in III-N devices2019

    • Author(s)
      S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono
    • Organizer
      The 13th International Conference on Nitride Semiconductors (ICNS-13)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Role of Al-vacancy complexes in AlN and high AlN mole fraction AlGaN alloys2019

    • Author(s)
      S. F. Chichibu, H. Miyake, and A. Uedono
    • Organizer
      4th International Workshop on UV Materials and Devices (IWUMD-IV)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Quantification of external quantum efficiency for near-band-edge emission of freestanding h-BN crystals under photo-excitation2019

    • Author(s)
      K. Kojima, K. Watanabe, T. Taniguchi, and S. F. Chichibu
    • Organizer
      Compound Semiconductor Week 2019 (CSW 2019), Spectroscopy & growth of h-BN II
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes2019

    • Author(s)
      K. Shima, K. Kojima, A. Uedono, and S. F. Chichibu
    • Organizer
      19th International Workshop on Junction Technology (IWJT2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effects of an extra Al metal added during the acidic ammonothermal growth of GaN crystals2019

    • Author(s)
      D. Tomida, Q. Bao, M. Saito, K. Kurimoto, M. Ito, T. Ishiguro, and S. F. Chichibu
    • Organizer
      The 13th International Conference on Nitride Semiconductors (ICNS-13)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Photoluminescence studies of sequentially Mg and H ion-implanted GaN with various implantation depths and crystallographic planes2019

    • Author(s)
      K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, and S. F. Chichibu
    • Organizer
      The 13th International Conference on Nitride Semiconductors (ICNS-13)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Dependences of external quantum efficiency of radiation and photoluminescence lifetime on the carbon concentration in GaN on GaN structures2019

    • Author(s)
      K. Kojima, F. Horikiri, Y. Narita, T. Yoshida, and S. F. Chichibu
    • Organizer
      The 13th International Conference on Nitride Semiconductors (ICNS-13)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Time-resolved luminescence studies of indirect excitons in h-BN epitaxial films grown by chemical vapor deposition using carbon-free precursors2019

    • Author(s)
      S. F. Chichibu, N. Umehara, K. Takiguchi, K. Shima, K. Kojima, Y. Ishitani, and K. Hara
    • Organizer
      The 13th International Conference on Nitride Semiconductors (ICNS-13)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 時間空間分解カソードルミネッセンスによるワイドバンドギャップ半導体の所発光ダイナミクス評価2019

    • Author(s)
      秩父重英
    • Organizer
      日本表面真空学会 2019年6月研究例会「電子ビーム技術の新展開」
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] 窒化物半導体の時間空間分解カソードルミネッセンス評価2019

    • Author(s)
      秩父重英
    • Organizer
      応用物理学会薄膜・表面物理研究会 第47回薄膜・表面物理セミナー 「半導体GaNの基礎と応用」 -パワーデバイス開発のための合成・分析・構造設計技術-
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] 全方位フォトルミネセンス(ODPL)法を用いた半導体結晶の光物性評価2019

    • Author(s)
      小島一信,秩父重英
    • Organizer
      ナノテスティング学会「第25回P&A解析研究会」
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] 多光子励起による窒化ガリウム結晶の時間分解フォトルミネセンス分光(2)2019

    • Author(s)
      小島一信,谷川智之,粕谷拓生,片山竜二,田中敦之,本田善央,天野浩,秩父重英
    • Organizer
      2019年秋季応用物理学会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 気相成長m面自立AlN基板およびホモエピタキシャル層の偏光特性と発光ダイナミクス2019

    • Author(s)
      秩父重英,小島一信,羽豆耕治,石川陽一,古澤健太郎,三田清二,R.Collazo,Z.Sitar,上殿明良
    • Organizer
      2019年秋季応用物理学会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 深紫外AlGaN発光ダイオードの顕微エレクトロルミネセンス測定2019

    • Author(s)
      小島一信,吉田悠来,白岩雅輝,淡路祥成,菅野敦史,山本直克,平野光,長澤陽祐,一本松正道,秩父重英
    • Organizer
      2019年秋季応用物理学会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Helicon-wave-excited-plasma sputtering epitaxy of (001) anatase or (100) rutile TiO2 films on a (0001) GaN template for optoelectronic applications2019

    • Author(s)
      S. F. Chichibu
    • Organizer
      The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2019, OPTO
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] エピタキシャル成長およびイオン注入Mg添加GaN中の非輻射再結合中心2019

    • Author(s)
      秩父重英,嶋紘平,小島一信,高島信也,上野勝典,江戸雅晴,井口紘子,成田哲生, 片岡恵太,石橋章司,上殿明良
    • Organizer
      応用物理学会シリコンテクノロジー分科会 接合研究委員会 研究会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] 窒化物半導体特異構造の時間空間分解カソードルミネッセンス評価2019

    • Author(s)
      秩父重英,嶋紘平,小島一信,
    • Organizer
      窒化物半導体特異構造の科学-ナノ物性評価技術の進展と物性制御 2019年春季応用物理学会シンポジウム
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] 注入深さ・極性面の異なるMgイオン注入GaNのフォトルミネッセンス2019

    • Author(s)
      秩父重英,嶋紘平,井口紘子,成田哲生,片岡恵太,小島一信,上殿明良
    • Organizer
      2019年春季応用物理学会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 深紫外AlGaN発光ダイオードの時間分解エレクトロルミネセンス分光2019

    • Author(s)
      小島一信,吉田悠来,白岩雅輝,淡路祥成,菅野敦史,山本直克,平野光,長澤陽祐,一本松正道,秩父重英,
    • Organizer
      2019年春季応用物理学会
    • Related Report
      2018 Annual Research Report
  • [Presentation] マクロステップを持つc面AlN/サファイアテンプレート上に成長させたAlGaN量子井戸の構造解析(1)2019

    • Author(s)
      小島一信,長澤陽祐,平野光,一本松正道,本田善央,天野浩,赤崎勇,秩父重英,
    • Organizer
      2019年春季応用物理学会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE2018

    • Author(s)
      Y. Inatomi, A. Kusaba, Y. Kangawa, K. Kojima, and S. F. Chichibu
    • Organizer
      The 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'18),
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] P-type Conduction of Mg-ion Implanted N-polar GaN and the Optical Investigation2018

    • Author(s)
      T. Narita, K. Kataoka, H. Iguchi, K. Shima, K. Kojima, S. F. Chichibu, M. Kanechika, T. Uesugi, and T. Kachi:
    • Organizer
      The 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'18),
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Quantum efficiency of radiation in wide bandgap semiconductors2018

    • Author(s)
      K. Kojima and S. F. Chichibu
    • Organizer
      19th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19),
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Carrier trapping properties of defects in Mg-implanted GaN probed by monoenergetic positron beams2018

    • Author(s)
      A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, S. F. Chichibu, and S. Ishibashi
    • Organizer
      The 45th International Symposium on Compound Semiconductors (ISCS 2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Luminescence spectra of hexagonal BN thin films grown by chemical vapor deposition on a c-plane sapphire substrate2018

    • Author(s)
      S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
    • Organizer
      The 3rd International Conference on Physics of 2D Crystals (ICP2C3),
    • Related Report
      2018 Annual Research Report
  • [Presentation] Recent progress in acidic ammonothermal growth of GaN crystals2018

    • Author(s)
      S. F. Chichibu, M. Saito, Q. Bao, D. Tomida, K. Kurimoto, K. Shima, K. Kojima, and T. Ishiguro
    • Organizer
      The 7th International Symposium of Growth of III-Nitrides (ISGN-7),
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Influence of Self Absorption in Two-Photon-Excitation Photoluminescence of GaN2018

    • Author(s)
      T. Tanikawa, T. Fujita, K. Kojima, S. F. Chichibu, and T. Matsuoka
    • Organizer
      The 19th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-19)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Current localization structure observed in AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN templates with macrosteps2018

    • Author(s)
      K. Kojima, Y. Nagasawa, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu
    • Organizer
      International Workshop on Nitride Semiconductors 2018 (IWN2018),
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted Mg-doped GaN on GaN structures2018

    • Author(s)
      S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S. Ishibashi, and A. Uedono
    • Organizer
      International Workshop on Nitride Semiconductors 2018 (IWN2018),
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sapphire substrate2018

    • Author(s)
      S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
    • Organizer
      International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Microscopic structure of boosting IQE for AlGaN-based UV-B (285 nm) LED grown on macrosteps2018

    • Author(s)
      Y. Nagasawa, K. Kojima, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu
    • Organizer
      International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sappire substrate2018

    • Author(s)
      S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
    • Organizer
      Materials Research Society, 2018 Fall Meeting,
    • Related Report
      2018 Annual Research Report
  • [Presentation] Different nonradiative recombination between on the terraces and macrosteps of uneven QW for 285 nm-LED grown on AlN template with dense macrosteps2018

    • Author(s)
      Y. Nagasawa, K. Kojima, R. Sugie, A. Hirano, M. Ippommatsu, H. Amano, I. Akasaki, and S. F. Chichibu
    • Organizer
      The International Workshop on UV Materials and Devices (IWUMD)
    • Related Report
      2018 Annual Research Report
  • [Presentation] 陽電子消滅法によるp-GaNエピ層、イオン注入層の点欠陥評価2018

    • Author(s)
      上殿明良,石橋章司,小島一信,秩父重英,
    • Organizer
      応用物理学会結晶工学分科会, 第149回結晶工学分科会研究会「GaNonGaNパワーデバイスにむけて~p型GaNの結晶工学~」
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Mg添加GaNエピ層及びイオン注入層のフォトルミネッセンス評価2018

    • Author(s)
      秩父重英,嶋紘平,小島一信,高島信也,上野勝典,江戸雅晴,井口紘子,成田哲生,片岡恵太,石橋章司,上殿明良,
    • Organizer
      応用物理学会結晶工学分科会, 第149回結晶工学分科会研究会「GaNonGaNパワーデバイスにむけて~p型GaNの結晶工学~」
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] GaN結晶成長技術の進展と発光特性向上の現状2018

    • Author(s)
      秩父重英,上殿明良
    • Organizer
      日本結晶成長学会 ナノ構造エピタキシャル成長分科会, プレIWN2018第10回窒化物半導体結晶成長講演会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] AlN,AlGaN薄膜および量子井戸の発光特性2018

    • Author(s)
      秩父重英,小島一信,三宅秀人,平松和正,上殿明良,
    • Organizer
      日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会 第110回研究会・特別公開シンポジウム
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] 酸性アモノサーマル法による大口径GaNバルク結晶作製技術の展望2018

    • Author(s)
      秩父重英,斉藤真,包全喜,冨田大輔,嶋紘平,小島一信,石黒徹,
    • Organizer
      日本学術振興会結晶加工と評価技術145委員会 パワーデバイス用シリコンおよび関連半導体に関する研究会(第6回)
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] バンド端近傍発光の外部量子効率が4%を超える六方晶BN単結晶の光学評価2018

    • Author(s)
      小島一信,渡邊賢司,谷口尚,秩父重英,
    • Organizer
      2018年秋季応用物理学会
    • Related Report
      2018 Annual Research Report
  • [Presentation] サファイア基板に気相成長させたh-BN薄膜の発光ダイナミクス2018

    • Author(s)
      秩父重英,嶋紘平,梅原直己,小島一信,原和彦,
    • Organizer
      2018年秋季応用物理学会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 280nm帯深紫外AlGaN発光ダイオードを用いた日光下における1.6 Gbps光無線伝送2018

    • Author(s)
      小島一信,吉田悠来,白岩雅輝,淡路祥成,菅野敦史,山本直克,秩父重英,
    • Organizer
      2018年秋季応用物理学会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Spatio-time-resolved cathodoluminescence of h-BN microcrystals2018

    • Author(s)
      S. F. Chichibu, Y. Ishikawa, H. Kominami, and K. Hara
    • Organizer
      The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2018
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Determination of absolute quantum efficiency of radiation in nitride semiconductors using an integrating sphere2018

    • Author(s)
      K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu, :
    • Organizer
      The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2018
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(1)2018

    • Author(s)
      秩父重英,小島一信,
    • Organizer
      2018年春季応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(2)2018

    • Author(s)
      稲富悠也,草場彰,柿本浩一,寒川義裕,小島一信,秩父重英,
    • Organizer
      2018年春季応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE2018

    • Author(s)
      Y. Inatomi, A. Kusaba, Y. Kangawa, K. Kojima, and S. F. Chichibu
    • Organizer
      The 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'18)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Quantum efficiency of radiation in wide bandgap semiconductors2018

    • Author(s)
      K. Kojima and S. F. Chichibu
    • Organizer
      19th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Luminescence spectra of hexagonal BN thin films grown by chemical vapor deposition on a c-plane sapphire substrate2018

    • Author(s)
      S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
    • Organizer
      The 3rd International Conference on Physics of 2D Crystals (ICP2C3)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] サファイア基板に気相成長させた六方晶BN薄膜の発光スペクトル2018

    • Author(s)
      秩父重英,梅原直己,小島一信,原和彦
    • Organizer
      2018年春季応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Mgイオン注入N極性面GaNの時間分解フォトルミネッセンス評価2018

    • Author(s)
      嶋紘平,井口紘子,成田哲生,片岡恵太,上殿明良,小島一信,秩父重英
    • Organizer
      2018年春季応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] GaNの二光子励起フォトルミネッセンス測定における自己吸収の影響2018

    • Author(s)
      谷川智之,小島一信,秩父重英,松岡隆志
    • Organizer
      2018年春季応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] マクロステップを有するc面AlGaN量子井戸発光ダイオード構造の発光特性2017

    • Author(s)
      小島一信,長澤陽祐,平野光,一本松正道,本田善央,天野浩,赤崎勇,秩父重英
    • Organizer
      2017年春季応用物理学会
    • Place of Presentation
      横浜国際平和会議場(神奈川県横浜市)
    • Year and Date
      2017-03-17
    • Related Report
      2016 Annual Research Report
  • [Presentation] m面AlInNエピタキシャルナノ構造を用いた偏光光源の可能性2017

    • Author(s)
      秩父重英,小島一信,上殿明良,佐藤義孝
    • Organizer
      2017年春季応用物理学会シンポジウム
    • Place of Presentation
      横浜国際平和会議場(神奈川県横浜市)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] IQE Quantification of Nitride Semiconductors - Omnidirectional photoluminescence (ODPL) measurement utilizing an integrating sphere -2017

    • Author(s)
      K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu:
    • Organizer
      The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'17)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Spatio-time-resolved cathodoluminescence studies on hexagonal BN microcrystals2017

    • Author(s)
      S. F. Chichibu, Y. Ishikawa, Y. Kominami, and K. Hara
    • Organizer
      The 2nd International Conference on Physics of 2D Crystals (ICP2C2)
    • Related Report
      2017 Annual Research Report 2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] A theoretical proposal for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high AlN mole fraction AlxGa1-xN multiple quantum wells2017

    • Author(s)
      K. Kojima, K. Furusawa, Y. Yamazaki, H. Miyake, K. Hiramatsu, and S. F. Chichibu:
    • Organizer
      The 18th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN18)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] A way to achieve more than 90% of the overlap integral of electron and hole wavefunctions in high AlN mole fraction AlGaN MQWs2017

    • Author(s)
      S. F. Chichibu, K. Kojima, K. Furusawa, Y. Yamazaki, K. Hiramatsu, and H.Miyake
    • Organizer
      The 12th International Conference on Nitride Semiconductors (ICNS-12)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Origin and properties of intrinsic Shockley-Read-Hall nonradiative recombination centers in GaN2017

    • Author(s)
      S. F. Chichibu, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, and A. Uedono
    • Organizer
      29th International Conference on Defects in Semiconductors (ICDS2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 二次組成変調によって電子・正孔波動関数の重なり積分を増強させた c面AlGaN多重量子井戸の発光特性評価2017

    • Author(s)
      小島一信,林侑介,三宅秀人,平松和政,秩父重英,
    • Organizer
      2017年秋季応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] GaN基板上Mg添加GaNの時間分解フォトルミネッセンス評価2017

    • Author(s)
      秩父重英,小島一信,嶋紘平,高島信也,江戸雅晴,上野勝典,石橋章司,上殿明良
    • Organizer
      2017年秋季応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Periodic compositional undulation in the m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy on a GaN substrate2017

    • Author(s)
      S. F. Chichibu and K. Kojima:
    • Organizer
      European Materials research, optoelectronic devices and sensors
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Optical and defect characteristics of m-plane Al1-xInxN epitaxial nanostructures2017

    • Author(s)
      S. F. Chichibu, K. Kojima, and A. Uedono
    • Organizer
      8th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Vacuum-fluorescent-display devices emitting polarized deep-ultraviolet and visible lights using m-plane Al1-xInxN epitaxial nanostructures2017

    • Author(s)
      S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
    • Organizer
      11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Compositional modulation for high AlN mole fraction AlxGa1-xN multiple quantum wells to enhance overlap integral of carrier wavefunctions2017

    • Author(s)
      K. Kojima, Y. Hayashi, K. Hiramatsu, H. Miyake, and S. F. Chichibu:
    • Organizer
      International Workshop on UV Materials and Devices (IWUMD) 2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Consideration of Shockley-Read-Hall nonradiative recombination centers in wide bandgap (Al,Ga)N and ZnO2017

    • Author(s)
      S. F. Chichibu, K. Kojima, K. Shima, A. Uedono, and S. Ishibashi
    • Organizer
      Materials Research Society, 2017 Fall Meeting
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 全方位フォトルミネセンス(ODPL)法を用いた窒化物半導体の発光量子効率測定2017

    • Author(s)
      小島一信,三宅秀人,平松和政,秩父重英,
    • Organizer
      日本結晶成長学会 第46回結晶成長国内会議(JCCG-46)
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] Theoretical study of composition pulling effect in AlGaN and AlInN MOVPE2017

    • Author(s)
      Y. Inatomi, Y. Kangawa, S. F. Chichibu, and K. Kakimoto
    • Organizer
      International Workshop on UV Materials and Devices (IWUMD) 2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Spatio-time-resolved cathodoluminescence studies of hexagonal BN microcrystals2017

    • Author(s)
      S. F. Chichibu, Y. Ishikawa, H. Kominami, and K. Hara
    • Organizer
      International Workshop on UV Materials and Devices (IWUMD) 2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] UV light absorbing and emitting diodes consisting of a p-type NiO film deposited on an n-type GaN homoepitaxial epilayer2017

    • Author(s)
      W. Zehua, H. Nakai, M. Sugiyama, and S. F. Chichibu
    • Organizer
      Materials Research Society, 2017 Fall Meeting
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Carrier trapping/detrapping properties of defects in Mg-implanted GaN probed by monoenergetic positron beams2017

    • Author(s)
      A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, S. F. Chichibu, and S. Ishibashi
    • Organizer
      The 45th International Symposium on Compound Semiconductors (ISCS 2018)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] GaN中の非輻射再結合中心の正体とその特性2017

    • Author(s)
      秩父重英,小島一信,上殿明良
    • Organizer
      応用物理学会結晶工学分科会, 第147回結晶工学分科会研究会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] 高品質窒化ガリウム単結晶の光物性評価2017

    • Author(s)
      小島一信,秩父重英,池田宏隆,藤戸健史
    • Organizer
      2017年秋季セラミクス協会第30回シンポジウム
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] GaNの低転位密度化・高純度化と主要な非輻射再結合中心2017

    • Author(s)
      秩父重英,上殿明良,嶋紘平,小島一信,石橋章司
    • Organizer
      応用物理学会 先進パワー半導体分科会 第3回個別討論
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] ワイドギャップ半導体の発光量子効率と発光寿命の相関2017

    • Author(s)
      小島一信,秩父重英
    • Organizer
      応用物理学会励起ナノプロセス研究会 第13回研究会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] 六方晶BNの薄膜成長とその深紫外発光評価2017

    • Author(s)
      原和彦,梅原直己,小島一信,秩父重英
    • Organizer
      2018年春季応用物理学会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] 偏光遷移領域におけるc面AlGaN量子井戸構造の量子細線型状態密度2017

    • Author(s)
      坂井繁太,南琢人,小島一信,秩父重英,山口敦史
    • Organizer
      2017年秋季応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] n-GaNホモエピ薄膜上へのp-NiOスパッタ堆積とUV光吸収太陽電池及びLEDの試作2017

    • Author(s)
      王澤樺,中井洋志,杉山睦,秩父重英
    • Organizer
      2017年秋季応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 六方晶BN微結晶の発光ダイナミクス評価(3)2017

    • Author(s)
      秩父重英,石川陽一,小南裕子,原和彦
    • Organizer
      2017年秋季応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 六方晶BN微結晶の発光ダイナミクス評価(4)2017

    • Author(s)
      秩父重英,石川陽一,小南裕子,原和彦
    • Organizer
      2017年秋季応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Optical characteristics of c-plane AlGaN multiple-quantum-well light-emitting diode structures with macro-size steps2017

    • Author(s)
      K. Kojima, Y. Nagasawa, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu
    • Organizer
      The 12th International Conference on Nitride Semiconductors (ICNS-12)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] A high internal quantum efficiency of the emission in GaN single crystals observed by omnidirectional photoluminescence (ODPL)2017

    • Author(s)
      K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu
    • Organizer
      The 12th International Conference on Nitride Semiconductors (ICNS-12)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Role of point defects on the luminescent properties of epitaxial and ion-implanted Mg-doped GaN fabricated on a GaN substrate2017

    • Author(s)
      S. F. Chichibu, K. Kojima, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, and A. Uedono
    • Organizer
      The 12th International Conference on Nitride Semiconductors (ICNS-12)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Spatio-Time-Resolved Cathodoluminescence studies of h-BN microcrystals2017

    • Author(s)
      S. F. Chichibu, Y. Ishikawa, Y. Kominami, and K. Hara
    • Organizer
      The 12th International Conference on Nitride Semiconductors (ICNS-12)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Quantum-Wire-Like Density of States in c-plane AlGaN Quantum Wells in Polarization-Crossover Composition Region2017

    • Author(s)
      S. Sakai, T. Minami, K. Kojima, S. F. Chichibu, and A. A. Yamaguchi
    • Organizer
      The 12th International Conference on Nitride Semiconductors (ICNS-12)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] フェムト秒レーザ励起光電子銃によるⅢ族窒化物半導体の時間・空間分解カソードルミネッセンス評価2016

    • Author(s)
      秩父 重英
    • Organizer
      電子情報通信学会 第4回超高速光エレクトロニクス研究会-UFO・IPDA・OPE・OME合同研究会
    • Place of Presentation
      東北大学 片平キャンパス(宮城県仙台市)
    • Year and Date
      2016-11-24
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] Defect-resistant emission properties of nonpolar m-plane Al1-xInxN epilayers for deep-ultraviolet to visible polarized-light-emitting vacuum fluorescent display devices2016

    • Author(s)
      S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
    • Organizer
      International Workshop on Nitride Semiconductors 2016 (IWN2016)
    • Place of Presentation
      Orland, Florida, USA
    • Year and Date
      2016-10-02
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Defect-resistant luminescent probability of m-plane AlInN alloy films for deep ultraviolet and visible polarized light-emitters2016

    • Author(s)
      S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
    • Organizer
      European Materials Research Society, 2016 Fall Meeting
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2016-09-19
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Metalorganic vapor phase epitaxy of pseudomorphic m-plane Al1-xInxN alloy films on a low defect density m-plane GaN substrate2016

    • Author(s)
      S. F. Chichibu, K. Kojima, Y. Yamazaki, and K. Furusawa
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2016-08-07
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Book] 2020版 薄膜作製応用ハンドブック2020

    • Author(s)
      秩父重英
    • Total Pages
      14
    • Publisher
      (株)エヌ・ティー・エス
    • ISBN
      9784860436315
    • Related Report
      2019 Annual Research Report
  • [Remarks] 研究内容紹介

    • URL

      http://www2.tagen.tohoku.ac.jp/lab/chichibu/html/research.html

    • Related Report
      2019 Annual Research Report
  • [Remarks] 非極性面窒化アルミニウムインジウム薄膜ナノ構造を用いた新しい深紫外線~緑色偏光光源

    • URL

      http://www.tohoku.ac.jp/japanese/2016/11/press20161124-03.html

    • Related Report
      2016 Annual Research Report
  • [Remarks] 非極性面窒化アルミニウムインジウム薄膜ナノ構造を用いた新しい深紫外線~緑色偏光光源

    • URL

      http://www2.tagen.tohoku.ac.jp/lab/news_press/20161124/

    • Related Report
      2016 Annual Research Report
  • [Remarks] 非極性m面Al1-xInxN薄膜を用いた深紫外線~緑色偏光光源

    • URL

      http://five-star.tagen.tohoku.ac.jp/results/pdf/161206_prof.chichibu.pdf

    • Related Report
      2016 Annual Research Report
  • [Remarks] AlGaN量子井戸を発光層とした深紫外発光デバイスの高性能化指針

    • URL

      http://five-star.tagen.tohoku.ac.jp/results/pdf/170301_prof.chichibu.pdf

    • Related Report
      2016 Annual Research Report

URL: 

Published: 2016-07-04   Modified: 2022-01-27  

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