Study of point defects and light-emitting dynamics in group-III nitride semiconductors

• Project Area: Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
• Project/Area Number: 18069001
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: University of Tsukuba
• Principal Investigator: UEDONO Akira University of Tsukuba, 大学院・数理物質科学研究科, 教授 (20213374)
• Co-Investigator(Kenkyū-buntansha): CHICHIBU Shigefusa 東北大学, 多元物質科学研究所, 教授 (80266907) ; OSHIYAMA Atsushi 東京大学, 大学院・工学系研究科, 教授 (80143361) ; UCHIDA Kazuyuki 東京大学, 大学院・工学系研究科, 助教 (10393810) ; SHIRAISHI Kenji 筑波大学, 大学院・数理物質科学研究科, 教授 (20334039)
• Project Period (FY): 2006 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥66,000,000 (Direct Cost: ¥66,000,000); Fiscal Year 2010: ¥5,300,000 (Direct Cost: ¥5,300,000); Fiscal Year 2009: ¥6,100,000 (Direct Cost: ¥6,100,000); Fiscal Year 2008: ¥14,200,000 (Direct Cost: ¥14,200,000); Fiscal Year 2007: ¥15,900,000 (Direct Cost: ¥15,900,000); Fiscal Year 2006: ¥24,500,000 (Direct Cost: ¥24,500,000)
• Keywords: III族窒化物半導体 / 点欠陥 / 発光ダイナミックス / GaN / AlN / InN / 光学測定 / 第一原理計算 / 陽電子消滅 / 非輻射再結合 / AIN / MBE / CL

Research Abstract

We studied relationships between nonradiative recombination lifetimes and point defects in (AlGaIn)N by means of positron annihilation and time-resolved photoluminescence techniques ; such recombination centers govern optical properties of the materials. We also used the first-principle calculation to study configuration and electric properties of point defects and band structures at the surface and in the interfaces.

Research Products

• [Journal Article] Time-resolved photoluminescence of a two-dimensional electron gas in an Al_<0.2>Ga_<0.8>N/GaN heterostructure fabricated on ammonothermal GaN substrates (2011)
  • Author(s): S.F.Chichibu, K.Hazu, Y.Kagamitani, T.Onuma, D.Ehrentraut, T.Fukuda, T.Ishiguro
  • Journal Title: Applied Physics Express 4
  • Peer Reviewed
• [Journal Article] Impacts of anisotropic tilt mosaics of state-of-the-art m-plane freestanding GaN substrates on the structural and luminescent properties of m-plane Al_xGa_<1-x>N epilayers (2011)
  • Author(s): K.Hazu, M.Kagaya, T.Hoshi, T.Onuma, S.F.Chicihbu
  • Journal Title: J.Vac.Sci.Tech.B 29
  • Peer Reviewed
• [Journal Article] Major impacts of point defects and impurities on the carrier recombination dynamics in AlN (2011)
  • Author(s): S.F.Chichibu, T.Onuma, K.Hazu, A.Uedono
  • Journal Title: Appl.Phys.Lett. 97
  • Peer Reviewed
• [Journal Article] Time-resolved photoluminescence of a two-dimensional electron gas in an Al_<0.2>Ga_<0.8>N/GaN heterostructure fabricated on ammonothermal GaN substrates (2011)
  • Author(s): Chichibu, et al.
  • Journal Title: Applied Physics Express Volume: 4
  • Peer Reviewed
• [Journal Article] Impacts of anisotropic tilt mosaics of state-of-the-art m-plane freestanding GaN substrates on the structural and luminescent properties of m-plane Al_xGa_<1-x>N epilayers (2011)
  • Author(s): Hazu, et al.
  • Journal Title: J.Vac.Sci.Tech.B Volume: 29
  • Peer Reviewed
• [Journal Article] Imaging of the distribution of average positron lifetimes by using a positron probe microanalyzer (2011)
  • Author(s): N.Oshima, et al.
  • Journal Title: J.Phys.: Conf.Ser. Volume: 262
  • Peer Reviewed
• [Journal Article] Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10-1-1) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy (2010)
  • Author(s): T.Onuma, A.Uedono, H.Asamizu, H.Sato, J.F.Kaeding, M.Iza, S.P.DenBaars, S.Nakamura, S.F.Chichibu
  • Journal Title: Appl.Phys.Lett. 96
  • Peer Reviewed
• [Journal Article] Identification of extremely radiative nature of AlN by time-resolved photoluminescence (2010)
  • Author(s): T.Onuma, K.Hazu, A.Uedono, T.Sota, S.F.Chichibu
  • Journal Title: Appl.Phys.Lett. 96
  • Peer Reviewed
• [Journal Article] Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN (2010)
  • Author(s): S.Chen, A.Uedono, S.Ishibashi, S.Tomita, H.Kudo, K.Akimoto
  • Journal Title: Appl.Phys.Lett. 96
  • Peer Reviewed
• [Journal Article] 陽電子消滅の基礎と最先端 (2010)
  • Author(s): 上殿明良, 石橋章司, 大島永康, 大平俊行, 鈴木良一
  • Journal Title: 応用物理学会 結晶工学分科会 第15回結晶工学セミナーテキスト Pages: 1-8
  • Peer Reviewed
• [Journal Article] Major impacts of point defects and impurities on the carrier recombination dynamics in AlN (2010)
  • Author(s): S.F.Chichibu, et al.
  • Journal Title: Appl.Phys.Lett. Volume: 97
  • Peer Reviewed
• [Journal Article] Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10-1-1) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy (2010)
  • Author(s): T.Onuma, et al.
  • Journal Title: Appl.Phys.Lett. Volume: 96
  • Peer Reviewed
• [Journal Article] Identification of extremely radiative nature of AlN by time-resolved photoluminescence (2010)
  • Author(s): T.Onuma, et al.
  • Journal Title: Appl.Phys.Lett. Volume: 96
  • Peer Reviewed
• [Journal Article] Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN (2010)
  • Author(s): S.Chen, et al.
  • Journal Title: Appl.Phys.Lett. Volume: 96
  • Peer Reviewed
• [Journal Article] 陽電子消滅の基礎と最先端 (2010)
  • Author(s): 上殿明良, 他
  • Journal Title: 応用物理学会 結晶工学分科会 第15回結晶工学セミナーテキスト Pages: 1-8
• [Journal Article] Light polarization characteristics of m-plane Al_xGa_<1-x>N films sufferingfrom in-plane anisotropic tensile stresses (2010)
  • Author(s): K.Hazu, et al.
  • Journal Title: Journal of Applied Physics Volume: 107
  • Peer Reviewed
• [Journal Article] Photoluminescence and positron annihilation studies on Mg-dopednitrogen-polarity semipolar (10-1-1) GaN heteroepitaxial layersgrown by metalorganic vapor phase epitaxy (2010)
  • Author(s): T.Onuma, et al.
  • Journal Title: Applied Physics Letters Volume: 96
  • Peer Reviewed
• [Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation (2009)
  • Author(s): A.Uedono, H.Nakamori, K.Narita, J.Suzuki, X.Wang, S.-B.Che, Y.Ishitani, A.Yoshikawa, S.Ishibashi
  • Journal Title: J.App.Phys. 105
  • Peer Reviewed
• [Journal Article] Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy (2009)
  • Author(s): T.Onuma, T.Shibata, K.Kosaka, K.Asai, S.Sumiya, M.Tanaka, T.Sota, A.Uedono, S.F.Chichibu
  • Journal Title: J.App.Phys. 105
  • NAID: 120002338505
  • Peer Reviewed
• [Journal Article] Relationship between defects and optical properties in Er-doped GaN (2009)
  • Author(s): S.Chen, et al.
  • Journal Title: J.Crystal Growth Volume: 311 Pages: 3097-3099
  • Peer Reviewed
• [Journal Article] Point defects in group-III nitride semiconductors studied by positron annihilation (2009)
  • Author(s): A.Uedono, et al.
  • Journal Title: J.Crystal Growth Volume: 311 Pages: 3075-3079
  • Peer Reviewed
• [Journal Article] Thermal stability of semi-insulating property of Fe-doped GaN bulk films studied by photoluminescence and monoenergetic positron annihilation techniques (2009)
  • Author(s): M.Kubota, et al.
  • Journal Title: J.Appl.Phys. Volume: 105
  • Peer Reviewed
• [Journal Article] First principles studies on In-related nitride semiconductors. (2009)
  • Author(s): T.Obata, et al.
  • Journal Title: J.Cryst.Growth Volume: 311 Pages: 2772-2775
  • Peer Reviewed
• [Journal Article] Structural, Optical, and Homoepitaxial Studies on the Bulk GaN Single Crystals Spontaneously Nucleated by the Na-flux Method (2009)
  • Author(s): T.Onuma, et al.
  • Journal Title: Applied Physics Express Volume: 2 Pages: 910041-3
  • Peer Reviewed
• [Journal Article] Nonpolar and Semipolar Group III Nitride-Based Materials (2009)
  • Author(s): J.S.Speck, S.F.Chichibu
  • Journal Title: MRS Bulletin Volume: 34 Pages: 304-309
  • Peer Reviewed
• [Journal Article] 陽電子消滅による窒化物光半導体の点欠陥の評価 (2009)
  • Author(s): 上殿明良
  • Journal Title: 日本結晶成長学会誌(総合報告) Volume: 36 Pages: 155-165
  • Peer Reviewed
• [Journal Article] III族窒化物半導体(Al, Ga)Nにおける発光特性と点欠陥の相関関係 (2009)
  • Author(s): 秩父重英, 上殿明良
  • Journal Title: 日本結晶成長学会誌(総合報告) Volume: 36 Pages: 166-177
  • Peer Reviewed
• [Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation (2009)
  • Author(s): A. Uedono, H. Nakamori, K. Narita, and J. Suzuki, X. Wang, S.-B. Che, Y. Ishitani, A. Yoshikawa and S. Ishibashi
  • Journal Title: J. App. Phys 105
  • Peer Reviewed
• [Journal Article] Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy (2009)
  • Author(s): T. Onuma, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, A. Uedono and S. F. Chichibu
  • Journal Title: J. App. Phys 105
  • NAID: 120002338505
  • Peer Reviewed
• [Journal Article] Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy (2009)
  • Author(s): 尾沼猛儀
  • Journal Title: J. Appl. Phys 105
  • Peer Reviewed
• [Journal Article] Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane Al_xGa_1-xN films grown on m-plane freestanding GaN substrates by NH3-source molecular beam epitaxy (2009)
  • Author(s): 星拓也
  • Journal Title: Appl. Phys. Lett 94
  • Peer Reviewed
• [Journal Article] Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation (2009)
  • Author(s): 上殿明良
  • Journal Title: J. Appl. Phys. 105
  • Peer Reviewed
• [Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation m (2009)
  • Author(s): 上殿明良
  • Journal Title: J. Appl. Phys 105
  • Peer Reviewed
• [Journal Article] Intrinsic ferromagnetism due to cation vacancies in Gd-doped GaN, "First principles simulation" (2008)
  • Author(s): Y.Gohda, A.Oshiyama
  • Journal Title: Phys.Rev.B 78
  • Peer Reviewed
• [Journal Article] Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam (2008)
  • Author(s): A.Uedono, C.Shaoqiang, S.Jongwon, K.Ito, H.Nakamori, N.Honda, S.Tomita, K.Akimoto, H.Kudo, S.Ishibashi
  • Journal Title: J.App.Phys. 103
  • NAID: 120007131318
  • Peer Reviewed
• [Journal Article] Intrinsic ferromagnetism due to cation vacancies in Gd-doped GaN, "First principles simulation" (2008)
  • Author(s): Y. Gohda and A. Oshiyama
  • Journal Title: Phys. Rev B 78
  • Peer Reviewed
• [Journal Article] Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam (2008)
  • Author(s): A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H. Nakamori, N. Honda, S. Tomita, K. Akimoto, H. Kudo and S. Ishibashi
  • Journal Title: J. App. Phys 103
  • NAID: 120007131318
  • Peer Reviewed
• [Journal Article] Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam (2008)
  • Author(s): 上殿明良
  • Journal Title: J. Appl. Phys. 103
  • NAID: 120007131318
  • Peer Reviewed
• [Journal Article] Anisotropic optical gain in m-plane In_xGa_1-xN/GaN multiple quantum well laser diode wafers fabricated on the low defect density free-standing GaN substrates (2008)
  • Author(s): 尾沼猛儀
  • Journal Title: Appl. Phys. Lett. 93
  • Peer Reviewed
• [Journal Article] Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metalorganic vapor phase epitaxy on low defect density free-standing GaN substrates (2008)
  • Author(s): 秩父 重英
  • Journal Title: Appl. Phys. Lett. 93
  • NAID: 120002338439
  • Peer Reviewed
• [Journal Article] Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy (2008)
  • Author(s): 秩父重英
  • Journal Title: Appl. Phys. Lett 93
  • NAID: 120002338447
  • Peer Reviewed
• [Journal Article] 非極性面窒化物半導体発光素子の最近の動向 (2008)
  • Author(s): 尾沼猛儀
  • Journal Title: マテリアルインテグレーション(特集 : 発光材料の新展開) 21 Pages: 53-63
  • Peer Reviewed
• [Journal Article] Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by ammonia-source moleculer beam epitaxy (2008)
  • Author(s): 星拓也
  • Journal Title: Physica Status Solidi. 5 Pages: 2129-2132
  • Peer Reviewed
• [Journal Article] Intrinsic ferromagnetism due to cation vacancies in Gd-doped GaN : First-principles calculations (2008)
  • Author(s): 合田義弘
  • Journal Title: Phys. Rev. B 78
  • Peer Reviewed
• [Journal Article] Improvement of Al-polar AlN layer quality by three-stage flow-modulation metalorganic chemical vapor deposition (2008)
  • Author(s): M.Takeuchi
  • Journal Title: Applied Physics Express 1 Pages: 0211021-3
  • Peer Reviewed
• [Journal Article] Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metalorganic vapor phase epitaxy on low defect density free-standing GaN substrates (2008)
  • Author(s): S.F.Chichibu
  • Journal Title: Applied Physics Letters 92 Pages: 0919121-3
  • NAID: 120002338439
  • Peer Reviewed
• [Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques (2007)
  • Author(s): S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.Denbaars, J.S.Speck, U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, T.Sota
  • Journal Title: Philosophical Magazine 87 Pages: 2019-2039
  • Peer Reviewed
• [Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques (2007)
  • Author(s): S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han and T. Sot
  • Journal Title: Philosophical Magazine 87 Pages: 2019-2039
  • Peer Reviewed
• [Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques (2007)
  • Author(s): S.F.Chichibu
  • Journal Title: Philosophical Magazine 87 Pages: 2019-2039
  • Peer Reviewed
• [Journal Article] Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams (2007)
  • Author(s): A.Uedono
  • Journal Title: J. App. Phys. 102
  • Peer Reviewed
• [Journal Article] Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by Nh_3-source molecular beam epitaxy (2007)
  • Author(s): T.Koyama
  • Journal Title: Appl. Phys. Lett 90
  • Peer Reviewed
• [Journal Article] Atomic distribution in In_x Ga1-_xN single-quantum-wells studied by extended X-ray absorption fine structure (2007)
  • Author(s): T.Miyanaga
  • Journal Title: Physical Review B 76
  • Peer Reviewed
• [Journal Article] Radiative and nonradiative lifetimes in nonpolar m-plane In_x Ga1-_xN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2007)
  • Author(s): T.Onuma
  • Journal Title: Journal of Vacuum Science and Technology B 25 Pages: 1524-1528
  • Peer Reviewed
• [Journal Article] Quantum-confined Stark effects in the m-plane In0.15Ga0.85N/GaN multiple quantum well blue light-emitting diode fabricated on low defect density free-standing GaN substrate (2007)
  • Author(s): T. Onuuma
  • Journal Title: Applied Physics Letters 91 Pages: 1819031-3
  • Peer Reviewed
• [Journal Article] Impacts f dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonotheramal method (2007)
  • Author(s): S.F.chichibu
  • Journal Title: Applied Physics Letters 91 Pages: 2519111-3
  • Peer Reviewed
• [Journal Article] Impact of strain on free-exciton resonamce energies in wurtzite AlN (2007)
  • Author(s): H.Ikeda
  • Journal Title: Journal of Applied Physics 102 Pages: 1237071-5
  • Peer Reviewed
• [Presentation] アモノサーマル法によるGaN結晶育成速度の圧力・鉱化剤依存 (2011)
  • Author(s): 鏡谷勇二, 他
  • Organizer: 2011年春季応用物理学会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-27
• [Presentation] m面自立GaN基板のチルトモゼイク異方性がNH3-MBE成長m面Al_<0.25>Ga_<0.75>N薄膜の発光特性に与える影響 (2011)
  • Author(s): 秩父重英, 他
  • Organizer: 2011年春季応用物理学会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-26
• [Presentation] 極性・非極性(Al,In,Ga)N混晶薄膜における振動子強度の歪依存性 (2011)
  • Author(s): 尾沼猛儀, 他
  • Organizer: 2011年春季応用物理学会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-26
• [Presentation] 気相合成NH_4Cl鉱化剤を用いて成長したアモノサーマルGaN基板上にMOVPE形成したAlGaN/GaNの時間分解フォトルミネッセンス評価 (2011)
  • Author(s): 秩父重英, 他
  • Organizer: 2011年春季応用物理学会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-26
• [Presentation] MOVPE成長AlN薄膜の点欠陥・不純物が発光寿命に及ぼす影響 (2011)
  • Author(s): 秩父重英, 他
  • Organizer: 2011年春季応用物理学会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-25
• [Presentation] Point defects in GaN and related group-III nitrides studied by means of positron annihilation (2011)
  • Author(s): A.Uedono, et al.
  • Organizer: SPIE Photonics West
  • Place of Presentation: California, USA(招待講演)
  • Year and Date: 2011-01-25
• [Presentation] Identification of extremely radiative nature of AlN by time-resolved photoluminescence and time-resolved cathodoluminescence measurements (2011)
  • Author(s): S.F.Chichibu, et al.
  • Organizer: SPIE Photonics West
  • Place of Presentation: California, USA(招待講演)
  • Year and Date: 2011-01-24
• [Presentation] Point defects in GaN and related group-III nitrides studied by means of positron annihilation (2011)
  • Author(s): A.Uedono, S.Ishibashi, S.F.Chichibu, K.Akimoto
  • Organizer: SPIE Photonics West California
  • Place of Presentation: USA
  • Year and Date: 2011-01-23
• [Presentation] Identification of extremely radiative nature of AlN by time-resolved photoluminescence and time-resolved cathodoluminescence measurements (2011)
  • Author(s): S.F.Chichibu, K.Hazu, T.Onuma, A.Uedono, T.Sota
  • Organizer: SPIE Photonics West California
  • Place of Presentation: USA
  • Year and Date: 2011-01-22
• [Presentation] 低速陽電子ビームを用いた材料の空孔型欠陥検出と評価 (2010)
  • Author(s): 上殿明良, 石橋章司, 大島永康, 大平俊行, 鈴木良一
  • Organizer: 応用物理学会
  • Place of Presentation: 名城大学
  • Year and Date: 2010-12-03
• [Presentation] 低速陽電子ビームを用いた材料の空孔型欠陥検出と評価 (2010)
  • Author(s): 上殿明良
  • Organizer: 応用物理学会 薄膜・表面物理分科会
  • Place of Presentation: 名城大学(招待講演)
  • Year and Date: 2010-12-03
• [Presentation] 時空間同時分解カソードルミネッセンス法によるm面自立GaN基板上InGaN薄膜の局所キャリアダイナミクス解析 (2010)
  • Author(s): 加賀谷宗仁, P.Corfdir, J.D.Ganiere, B.Deveaud-Pledran, N.Grandjean, 秩父重英
  • Organizer: 第65回応用物理学会東北支部学術講演会
  • Place of Presentation: 東北大学
  • Year and Date: 2010-11-25
• [Presentation] 陽電子の基礎と最先端 (2010)
  • Author(s): 上殿明良, 石橋章司, 大島永康, 大平俊行, 鈴木良一
  • Organizer: 第15回結晶工学セミナー
  • Place of Presentation: 学習院大学
  • Year and Date: 2010-11-18
• [Presentation] 陽電子の基礎と最先端 (2010)
  • Author(s): 上殿明良
  • Organizer: 第15回結晶工学セミナー
  • Place of Presentation: 学習院大学(招待講演)
  • Year and Date: 2010-11-18
• [Presentation] フェムト秒電子ビームを用いた窒化物半導体の時間分解分光計測 (2010)
  • Author(s): 秩父重英, 羽豆耕治, 鏡谷勇二, 尾沼猛儀, 石黒徹, 福田承生
  • Organizer: 東北大学金属材料研究所ワークショップ
  • Place of Presentation: 東北大学金属材料研究所
  • Year and Date: 2010-10-25
• [Presentation] フェムト秒電子ビームを用いた窒化物半導体の時間分解分光計測 (2010)
  • Author(s): 秩父重英
  • Organizer: 東北大学金属材料研究所ワークショップ
  • Place of Presentation: 東北大学金属材料研究所(招待講演)
  • Year and Date: 2010-10-25
• [Presentation] Time-resolved Photoluminescence and Time-resolved Cathodoluminescence Studies on AlN Epilayers Grown by Low-pressure Metalorganic Vapor Phase Epitaxy (2010)
  • Author(s): S.F.Chichibu
  • Organizer: Int.Workshop on Nitride Semiconductors
  • Place of Presentation: Florida, U.S.A.
  • Year and Date: 2010-09-23
• [Presentation] Time-resolved Photoluminescence and Time-resolved Cathodoluminescence Studies on AlN Epilayers Grown by Low-pressure Metalorganic Vapor Phase Epitaxy (2010)
  • Author(s): S.F.Chichibu, K.Hazu, Y.Kagamitani, T.Onuma, D.Ehrentraut, T.Fukuda, T.Ishiguro
  • Organizer: Int.Workshop on Nitride Semiconductors
  • Place of Presentation: Florida, USA
  • Year and Date: 2010-09-19
• [Presentation] Optical properties of GaN crystals gown by the amonothermal method using aidic meralizers and homoepitaxial flms grown by metalorganic vapor phase epitaxy (2010)
  • Author(s): K.Hazu, Y.Kagamitani, T.Onuma, T.Ishiguro, T.Fukuda, S.F.Chichibu
  • Organizer: Int.Workshop on Nitride Semiconductors
  • Place of Presentation: Florida, USA
  • Year and Date: 2010-09-19
• [Presentation] Spatio-time-resolved Cathodoluminescence Studies on the m-plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate by Metalorganic Vapor Phase Epitaxy (2010)
  • Author(s): M.Kagaya, P.Corfdir, J.-D. Ganiere, B.Deveaud-Pledran, N.Grandjean, S.F. Chichibu
  • Organizer: Int.Workshop on Nitride Semiconductors
  • Place of Presentation: Florida, USA
  • Year and Date: 2010-09-19
• [Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy (2010)
  • Author(s): S.F.Chichibu, K.Hazu, T.Onuma, T.Sota, A.Uedono
  • Organizer: Int.Workshop on Nitride Semiconductors
  • Place of Presentation: Florida, USA
  • Year and Date: 2010-09-19
• [Presentation] Optical properties of GaN crystals grown by the ammonothermal method using acidic mineralizers and homoepitaxial films grown by metalorganic vapor phase epitaxy (2010)
  • Author(s): K.Hazu, et al.
  • Organizer: Int.Workshop on Nitride Semiconductors
  • Place of Presentation: Florida, USA
  • Year and Date: 2010-09-19
• [Presentation] Spatio-time-resolved Cathodoluminescence Studies on the m-plane In_<0.05>Ga_<0.95>N Epilayer Grown on a Freestanding GaN Substrate by Metalorganic Vapor Phase Epitaxy (2010)
  • Author(s): M.Kagaya, et al.
  • Organizer: Int.Workshop on Nitride Semiconductors
  • Place of Presentation: Florida, USA
  • Year and Date: 2010-09-19
• [Presentation] 陽電子消滅によるAlGaN中の欠陥評価 (2010)
  • Author(s): 上殿明良, 三宅秀人, 平松和政, 石橋章司
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-15
• [Presentation] 陽電子消滅によるAlGaN中の欠陥評価 (2010)
  • Author(s): 上殿明良
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(招待講演)
  • Year and Date: 2010-09-15
• [Presentation] ヨウ化アンモニウムを鉱化剤に用いたアモノサーマル法によるGaN育成 (2010)
  • Author(s): 鏡谷勇二, 栗林岳人, 羽豆耕治, 尾沼猛儀, 冨田大輔, 志村玲子, 秩父重英, 杉山和正, 横山千昭, 石黒徹, 福田承生
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-14
• [Presentation] 気相合成した酸性鉱化剤を用いて成長したアモノサーマルGaN及びMOVPEホモエピタキシャル層の評価 (2010)
  • Author(s): 秩父重英, 鏡谷勇二, 羽豆耕治, 尾沼猛儀, 石黒徹, 福田承生
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-14
• [Presentation] Ammonothermal growth of GaN using a gas-phase synthesized acidic mineralizer and homoepitaxy by metalorganic vapor phase epitaxy (2010)
  • Author(s): S.F.Chichibu, Y.Kagamitani, K.Hazu, T.Onuma, T.Ishiguro, T.Fukuda
  • Organizer: 3rd Int.Sym.on Growth of III-Nitrides
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-04
• [Presentation] Identification of cathodoluminescence peaks in m-plane AlxGa1-xN epilayers grown on freestanding GaN substrates prepared by halide vapor phase epitaxy (2010)
  • Author(s): K.Hazu, M.Kagaya, T.Hoshi, T.Onuma, S.F.Chichibu
  • Organizer: 3rd Int.Sym.on Growth of III-Nitrides
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-04
• [Presentation] Ammonothermal growth of GaN using a gas-phase synthesized acidic mineralizer and homoepitaxy by metalorganic vapor phase epitaxy (2010)
  • Author(s): S.F.Chichibu, et al.
  • Organizer: 3^<rd> Int.Sym.on Growth of III-Nitrides
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-04
• [Presentation] Identification of cathodoluminescence peaks in m-plane Al_xCa_<1-x>N epilayers grown on freestanding GaN substrates prepared by halide vapor phase epitaxy (2010)
  • Author(s): K.Hazu, et al.
  • Organizer: 3^<rd> Int.Sym.on Growth of III-Nitrides
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-04
• [Presentation] AlN及び高AlNモル分率AlxGa1・xNエピタキシャル層の時間分解分光計測 (2010)
  • Author(s): 秩父重英, 尾沼猛儀, 羽豆耕治, 上殿明良, 宗田孝之
  • Organizer: 応用物理学会 応用電子物性分科会研究例会「紫外光デバイスの進展:材料物性と応用」
  • Place of Presentation: 大阪大学吹田キャンパス
  • Year and Date: 2010-05-21
• [Presentation] AlN及び高AlNモル分率Al_xCa_<1-x>Nエピタキシャル層の時間分解分光計測 (2010)
  • Author(s): 秩父重英
  • Organizer: 応用物理学会 応用電子物性分科会研究例会「紫外光デバイスの進展:材料物性と応用]
  • Place of Presentation: 大阪大学吹田キャンパス(招待講演)
  • Year and Date: 2010-05-21
• [Presentation] m面AlGaN混晶薄膜の発光スペクトルと構造・点欠陥の関係 (2010)
  • Author(s): 秩父重英
  • Organizer: 日本結晶成長学会 ナノ構造エピタキシャル成長分科会第2回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の新しい流れ」
  • Place of Presentation: 三重大学(招待講演)
  • Year and Date: 2010-05-14
• [Presentation] パルス電子線を用いた窒化物半導体のピコ秒時間分解分光計測(1)-パルス電子線発生とGaN計測- (2010)
  • Author(s): 秩父重英
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-18
• [Presentation] パルス電子線を用いた窒化物半導体のピコ秒時間分解分光計測(2)-MOVPE成長AlNの時間分解PLとの比較- (2010)
  • Author(s): 尾沼猛儀
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-18
• [Presentation] パルス電子線を用いた窒化物半導体のピコ秒時間分解分光計測(3)-MOVPE成長高AlNモル分率AlGaNの時間分解CL計測- (2010)
  • Author(s): 羽豆耕治
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-18
• [Presentation] パルス電子線を用いた窒化物半導体のピコ秒時間分解分光計測(4)-MOVPE成長m面InGaN薄膜の時空間同時分解計測- (2010)
  • Author(s): 加賀谷宗仁
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-18
• [Presentation] 自立GaN基板へのm面Al_<1-x>In_xN薄膜のMOVPE成長 (2010)
  • Author(s): 秩父重英
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-17
• [Presentation] Impacts of point defects on the luminescence properties of (Al,Ga)N (2010)
  • Author(s): S.F.Chichibu
  • Organizer: The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2010, OPTO, Gallium Nitride Materials and Devices V
  • Place of Presentation: San Francisco, USA
  • Year and Date: 2010-01-25
• [Presentation] NH_3-source molecular beam epitaxy of m-plane Al_xGa_<1-x>N films on low defect density free-standing GaN substrate (2009)
  • Author(s): K.Hazu
  • Organizer: The 2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
  • Place of Presentation: 東北大学(仙台市)
  • Year and Date: 2009-12-01
• [Presentation] Exciton spectra of AlN epilayers grown by metalorganic vapor phase epitaxy (2009)
  • Author(s): T.Onuma
  • Organizer: The 2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
  • Place of Presentation: 東北大学(仙台市)
  • Year and Date: 2009-12-01
• [Presentation] AlNエピタキシャル薄膜における励起子発光機構 (2009)
  • Author(s): 尾沼猛儀
  • Organizer: 電子情報通信学会レーザ・量子エレクトロニクス研究会/電子デバイス研究会/電子部品・材料研究会
  • Place of Presentation: 徳島大学(徳島市)
  • Year and Date: 2009-11-19
• [Presentation] 陽電子消滅法を用いた材料解析-材料不良解析への応用- (2009)
  • Author(s): 上殿明良
  • Organizer: X線分析研究懇談会
  • Place of Presentation: 大阪市立大学(大阪府大阪市)(招待講演)
  • Year and Date: 2009-11-05
• [Presentation] Time-resolved photoluminescence study of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy (2009)
  • Author(s): T.Onuma
  • Organizer: The 8th International Conference on Nitride Semiconductors (ICNS-8)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2009-10-22
• [Presentation] Spatially-resolved cathodoluminescence study on m-plane Al_xGa_<1-x>N films grown on m-plane free-standing GaN substrates (2009)
  • Author(s): S.F.Chichibu
  • Organizer: The 8th International Conference on Nitride Semiconductors (ICNS-8)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2009-10-22
• [Presentation] Polarization properties of m-plane Al_xGa_<1-x>N films suffering from in-plane anisotropic stress (2009)
  • Author(s): K.Hazu
  • Organizer: The 8th International Conference on Nitride Semiconductors (ICNS-8)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2009-10-21
• [Presentation] Capability of the bulk GaN single crystals spontaneously nucleated by the Na-flux method as an homoepitaxial substrate (2009)
  • Author(s): T.Onuma
  • Organizer: The 8th International Conference on Nitride Semiconductors(ICNS-8)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2009-10-19
• [Presentation] Proposal of droplet elimination process by radical beam irradiation for reproducible growth of high-quality InN and InGaN (2009)
  • Author(s): T.Yamaguchi
  • Organizer: The 8th International Conference on Nitride Semiconductors (ICNS-8)
  • Place of Presentation: Jeju, Korea(招待講演)
  • Year and Date: 2009-10-18
• [Presentation] Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy (2009)
  • Author(s): A.Yoshikawa
  • Organizer: E-MRS 2009 Fall Meeting
  • Place of Presentation: Warsaw University of Technology, Poland(招待講演)
  • Year and Date: 2009-09-14
• [Presentation] Time-resolved photoluminescence studies of excitons in AlN epilayers grown by metalorganic vapor phase epitaxy (2009)
  • Author(s): T.Onuma
  • Organizer: The 36th International Symposium on Compound Semiconductors (ISCS 2009)
  • Place of Presentation: Santa Barbara, CA, USA
  • Year and Date: 2009-09-02
• [Presentation] Optical Properties of m-plane (In,Ga) N Films Grown by Metalorganic Vapor Phase Epitaxy (2009)
  • Author(s): T.Onuma
  • Organizer: International Symposium of post-silicon materials and devices research alliance project
  • Place of Presentation: Osaka University Osaka, Japan
  • Year and Date: 2009-09-02
• [Presentation] NH_3-MBE成長m面Al_xGa_<1-x>N薄膜の空間分解陰極線蛍光評価 (2009)
  • Author(s): 秩父重英
  • Organizer: 2009年秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山県富山市)
  • Year and Date: 2009-08-10
• [Presentation] m面Al_xGa_<1-x>N薄膜の偏光特性の面内異方性歪依存性 (2009)
  • Author(s): 羽豆耕治
  • Organizer: 2009年秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山県富山市)
  • Year and Date: 2009-08-10
• [Presentation] AlN薄膜の時間分解フォトルミネッセンス (2009)
  • Author(s): 尾沼猛儀
  • Organizer: 2009年秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山県富山市)
  • Year and Date: 2009-08-10
• [Presentation] 陽電子消滅を用いたAlNの点欠陥と光学特性の研究 (2009)
  • Author(s): 窪田翔二
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山県富山市)
  • Year and Date: 2009-08-09
• [Presentation] Theoretical calculations of positron states and annihilation parameters in group-III nitride semiconductors (2009)
  • Author(s): S.Ishibashi, A.Uedono
  • Organizer: 25th International Conference on Defects in Semiconductors
  • Place of Presentation: St Petersburg, Russia
  • Year and Date: 2009-06-20
• [Presentation] 非極性面窒化物半導体エピタキシャル薄膜成長の課題と光学遷移過程の特徴 (2009)
  • Author(s): 秩父重英
  • Organizer: 日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
  • Place of Presentation: 東京農工大学(東京都小金井市)(招待講演)
  • Year and Date: 2009-05-16
• [Presentation] NH_3ソースMBE法による非極性m面自立GaN基板上へのAl_xGa_<1-x>N成長 (2009)
  • Author(s): 羽豆耕治
  • Organizer: 日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
  • Place of Presentation: 東京農工大学(東京都小金井市)
  • Year and Date: 2009-05-16
• [Presentation] MOVPE成長低転位AlN薄膜の励起子スペクトル (2009)
  • Author(s): 尾沼猛儀
  • Organizer: 日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
  • Place of Presentation: 東京農工大学(東京都小金井市)
  • Year and Date: 2009-05-16
• [Presentation] Polarization properties of m-plane Al_xGa_<1-x>N films suffering from in-plane anisotropic stress (2009)
  • Author(s): K.Hazu, et al.
  • Organizer: 9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN9)
  • Place of Presentation: Lecce, Italy
  • Year and Date: 2009-04-20
• [Presentation] m面自立GaN基板上NH_3-MBE成長ホモエピタキシャル薄膜の構造的・光学的特性のV/III比依存性 (2009)
  • Author(s): 羽豆耕治
  • Organizer: 2009年春季第56回応用物理学関係連合講演会
  • Place of Presentation: つくば, 茨城
  • Year and Date: 2009-03-30
• [Presentation] 窒化物半導体における陽イオン空孔による磁性 (2009)
  • Author(s): 合田義弘
  • Organizer: 2008年秋季日本物理学会大会
  • Place of Presentation: 岩手大学
  • Year and Date: 2009-03-21
• [Presentation] Cation Vacancies in Nitride Semiconductors : A Possibility of Intrinsic Ferromagnetism (2009)
  • Author(s): 押山淳
  • Organizer: JST-DFG Workshop on Nanoelectronics
  • Place of Presentation: 京都
  • Year and Date: 2009-01-21
• [Presentation] Growth issues and optical properties of nonpolar (Al,In,Ga)N films and quantum wells (2009)
  • Author(s): 秩父重英
  • Organizer: The 3rd Japan-Germany Joint Workshop on Nanoelectronics
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2009-01-21
• [Presentation] 非極性面窒化物半導体薄膜成長と問題点 (2008)
  • Author(s): 秩父重英
  • Organizer: 東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
  • Place of Presentation: 仙台, 宮城
  • Year and Date: 2008-10-30
• [Presentation] Polarized and Spatially-Resolved iCathodoluminescence Studies of m-plane AlxGal-xN Films Grown on Low Defect Density Free-Standing GaN Substrates (2008)
  • Author(s): 羽豆耕治
  • Organizer: International Workshop on Nitride Semiconductors
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 2008-10-08
• [Presentation] Optical Gain in Low Dislocation Density Nonpolar m-plane InGaN/GaN MQW LD Wafers Lased at 400 nm and 426 nm (2008)
  • Author(s): 尾沼猛儀
  • Organizer: International Workshop on Nitride Semiconductors
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 2008-10-08
• [Presentation] Ammonia Source Molecular Beam Epitaxy of m-plane AlxGal-xN Films Exhibiting Negligible Deep Emission Bands on Low Defect Density Free-Standing GaN Substrates (2008)
  • Author(s): 星拓也
  • Organizer: International Workshop on Nitride Semiconductors
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 2008-10-08
• [Presentation] Optical Properties of Nearly Stacking-Fault-Free m-plane GaN and InGaN Films Grown by Metalorganic Vapor Phase Epitaxy on Low Defect Density Free-Standing Substrates (2008)
  • Author(s): 秩父重英
  • Organizer: International Workshop on Nitride Semiconductors
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 2008-10-06
• [Presentation] Impacts of Dislocation Bending and growth polar direction on the Local Cathodoluminescence Spectra of GaN Prepared by Seeded Ammonothermal Growth (2008)
  • Author(s): 秩父重英
  • Organizer: International Workshop on Nitride Semiconductors
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 2008-10-06
• [Presentation] 窒化物半導体における陽イオン空孔による磁性 (2008)
  • Author(s): 合田義弘,押山淳
  • Organizer: 日本物理学会2008年秋季大会
  • Place of Presentation: 岩手大学
  • Year and Date: 2008-09-21
• [Presentation] 陽電子消滅を用いたMgドープInNの点欠陥の研究 (2008)
  • Author(s): 鈴木順也
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学春日井キャンパス
  • Year and Date: 2008-09-04
• [Presentation] Continuous-Wave Operation of mPlane InGaN Multiple Quantum Well Laser Diodes (2008)
  • Author(s): 岡本國美
  • Organizer: 2008年秋季第69回応用物理学会学術講演会
  • Place of Presentation: 春日井, 愛知
  • Year and Date: 2008-09-03
• [Presentation] m面自立GaN基板上へのAl_xGa_1-xN薄膜のNH_3ソースMBE成長 (2008)
  • Author(s): 星拓也
  • Organizer: 2008年秋季第69回応用物理学会学術講演会
  • Place of Presentation: 春日井, 愛知
  • Year and Date: 2008-09-03
• [Presentation] m面自立GaN基板上に成長したAl_xGa_1-xN薄膜の偏光・空間分解陰極線蛍光特性 (2008)
  • Author(s): 羽豆耕治
  • Organizer: 2008年秋季第69回応用物理学会学術講演会
  • Place of Presentation: 春日井, 愛知
  • Year and Date: 2008-09-03
• [Presentation] 酸性鉱化剤を用いた安熱合成GaNエピタキシャル層の陰極線蛍光特性 (2008)
  • Author(s): 羽豆耕治
  • Organizer: 2008年秋季第69回応用物理学会学術講演会
  • Place of Presentation: 春日井, 愛知
  • Year and Date: 2008-09-02
• [Presentation] Naフラックス法により成長したGaN単結晶の発光特性 (2008)
  • Author(s): 尾沼猛儀
  • Organizer: 2008年秋季第69回応用物理学会学術講演会
  • Place of Presentation: 春日井, 愛知
  • Year and Date: 2008-09-02
• [Presentation] 陽電子を用いたIII族窒化物半導体の点欠陥の研究 (2008)
  • Author(s): 上殿明良
  • Organizer: 特定領域研究「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」公開シンポジウム
  • Place of Presentation: 学士会館(東京)
  • Year and Date: 2008-08-01
• [Presentation] III族窒化物半導体のカチオン空孔とGdの協奏的強磁性の可能性 (2008)
  • Author(s): 合田義弘
  • Organizer: 特定領域研究「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」公開シンポジウム
  • Place of Presentation: 学士会館(東京)
  • Year and Date: 2008-08-01
• [Presentation] 点欠陥がAIN薄膜の発光特性に与える影響 (2008)
  • Author(s): 秩父重英
  • Organizer: 特定領域研究「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」公開シンポジウム
  • Place of Presentation: 学士会館(東京)
  • Year and Date: 2008-08-01
• [Presentation] MOVPE of nearly stacking-fault-free m-plane (In,Ga)N films on low defect density free-standing GaN substrates (2008)
  • Author(s): 秩父重英
  • Organizer: 27th Electronic Materials Symposium
  • Place of Presentation: 修善寺, 静岡
  • Year and Date: 2008-07-10
• [Presentation] Optical properties of nearly stacking-fault-free m-plane (In, Ga)N films grown by metalorganicivapor phase epitaxy on low defect density free-standing substrates (2008)
  • Author(s): 秩父重英
  • Organizer: The Second International Symposium on Growth of III-Nitrides
  • Place of Presentation: Izu, Japan
  • Year and Date: 2008-07-08
• [Presentation] Effects of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth (2008)
  • Author(s): 秩父重英
  • Organizer: The Second International Symposium on Growth of III-Nitrides
  • Place of Presentation: Izu, Japan
  • Year and Date: 2008-07-08
• [Presentation] Point defects in group-III nitride semiconductors studied by positron annihilation (2008)
  • Author(s): A. Uedono, S. Ishibashi, T. Ohdaira, R. Suzuki
  • Organizer: The 2nd International Symposium on Growth of III-Nitrides
  • Place of Presentation: Izu, Japan
  • Year and Date: 2008-07-06
• [Presentation] Investigation of Defect Distribution and Optical Properties of Er Doped GaN (2008)
  • Author(s): S. Chen
  • Organizer: The 2nd International Symposium on Growth of III-Nitrides
  • Place of Presentation: The 2nd International Symposium on Growth of III-Nitrides
  • Year and Date: 2008-07-06
• [Presentation] Optical properties of nearly stacking-fault-free m-plane (In, Ga)N films grown by metalorganic vapor phase epitaxy on low defect density free-standing substrates (2008)
  • Author(s): 秩父重英
  • Organizer: 50th Electronic Materials Conference
  • Place of Presentation: California, USA
  • Year and Date: 2008-06-27
• [Presentation] Optical gain in low dislocation density nonpolar m-plane InGaN/GaN MQW LD wafers (2008)
  • Author(s): 尾沼猛儀
  • Organizer: 50th Electronic Materials Conference
  • Place of Presentation: California, USA
  • Year and Date: 2008-06-27
• [Presentation] Effects of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth (2008)
  • Author(s): 秩父重英
  • Organizer: 50th Electronic Materials Conference
  • Place of Presentation: California, USA
  • Year and Date: 2008-06-25
• [Presentation] Impacts of point defects on the recombination dynamics and emission efficiency of (Al,Ga)N (2008)
  • Author(s): S. F. Chichibu, T. Onuma, and A. Uedono
  • Organizer: The Fourth Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2008-05-23
• [Presentation] Impacts of point defects on the recombination dynamics and emission efficiency of (Al.Ga)N (2008)
  • Author(s): 秩父重英
  • Organizer: The Fourth Asian Conference on Crystal Growth and Crystal Technology
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2008-05-23
• [Presentation] Built-in and external bias-induced quantum-confined Stark effects in a nonpolar m-plane Ino,,Gam,N/GaN multiple quantum well light-emitting diode (2008)
  • Author(s): 尾沼猛儀
  • Organizer: 7th International Symposium on Semiconductor Light Emitting Devices
  • Place of Presentation: Phoenix, Arizona, USA
  • Year and Date: 2008-05-01
• [Presentation] Exciton fine structures in A1N epilayers grown by metalorganic vapor phase epitaxy (2008)
  • Author(s): 尾沼猛儀
  • Organizer: 7th International Symposium on Semiconductor Light Emitting Devices
  • Place of Presentation: Phoenix, Arizona, USA
  • Year and Date: 2008-04-27
• [Presentation] m面自立GaN基板上へのInGaN薄膜のMOVPE成長 (2008)
  • Author(s): 秩父重英
  • Organizer: 2008年春季応用物理学会
  • Place of Presentation: 千葉、日本
  • Year and Date: 2008-03-29
• [Presentation] 低転位非極性m面InGaN/GaN多重量子井戸LDの光学利得 (2008)
  • Author(s): 尾沼猛儀
  • Organizer: 2008年春季応用物理学会
  • Place of Presentation: 千葉、日本
  • Year and Date: 2008-03-29
• [Presentation] 塩基性鉱化剤を用いた安熱合成GaNエピタキシャル層の講造おおび発光特性 (2008)
  • Author(s): 秩父重英
  • Organizer: 2008年春季応用物理学会
  • Place of Presentation: 千葉、日本
  • Year and Date: 2008-03-27
• [Presentation] 非極性m面InGaN量子井戸LEDの光学特性酸化亜鉛の相手を知るべく (2007)
  • Author(s): 尾沼猛儀
  • Organizer: 平成19年度東北大学金属材料研究所ワークショップ「酸化亜鉛半導体テクノロジーの進歩」
  • Place of Presentation: 東北大学多元物質科学研究所
  • Year and Date: 2007-12-20
• [Presentation] Correlation between the ciolet luminescence intensity and defect density in ALN epilayers grown by NH3 source molecular beam epitaxy (2007)
  • Author(s): S. F, Chichibu
  • Organizer: The 34th International Symposium on Compound Semiconductors (ISCS 2007)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2007-11-17
• [Presentation] Origin of edfect-insensitive emission probability in (Al, In, Ga)N alloy films containing In (2007)
  • Author(s): S. F, Chichibu
  • Organizer: The 7th International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, Necada, USA
  • Year and Date: 2007-09-20
• [Presentation] Homoepitaxial growth of nearly stacking-fault-free m-plane (In, Ga)N films by metalorganic vapor phase using low defect density free-standing substrates (2007)
  • Author(s): S. F, Chichibu
  • Organizer: The 7th International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, Necada, USA
  • Year and Date: 2007-09-19
• [Presentation] Quantum-confined Stark effects in nonpolar m-plane InxGa1-xN/GaN multiple quantum well light-emitting diodes fabricated on low defect density free-standing substrates (2007)
  • Author(s): T, Onuma
  • Organizer: The 7th International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, Necada, USA
  • Year and Date: 2007-09-18
• [Presentation] Observation of well-resolved bound, free, and higher order excitons in AIN epilayers grown by metalorganic vapor phase epitaxy (2007)
  • Author(s): T, Onuma
  • Organizer: The 7th International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, Necada, USA
  • Year and Date: 2007-09-17
• [Presentation] Correlation between the ciolet luminescence intensity and defect density in ALN epilayers grown by NH3 source molecular beam epitaxy (2007)
  • Author(s): T, Koyama
  • Organizer: The 7th International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, Necada, USA
  • Year and Date: 2007-09-17
• [Presentation] 非極性InGaN量子井戸の空間分解CL評価 (2007)
  • Author(s): 秩父重英
  • Organizer: 第3回ナノマテリアル解析セミナー
  • Place of Presentation: つくば国際会議場エポカル
  • Year and Date: 2007-09-14
• [Presentation] AIN, GaNにおける貫通転位密度と点欠陥密度の関係 (2007)
  • Author(s): 秩父重英
  • Organizer: 2007年秋季応用物理学会
  • Place of Presentation: 北海道、日本
  • Year and Date: 2007-09-07
• [Presentation] 陽電子消滅を用いた窒化物光半導体の空孔型欠陥の検出 (2007)
  • Author(s): 上殿明良・秩父重英
  • Organizer: 応用物理学会
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-05
• [Presentation] Correlation between Al cacancy concentration and intensities of deep cathodoluminescence bands in AIN epilayers grown by NH3-source molecular beam epitaxy (2007)
  • Author(s): S. F, Chichibu
  • Organizer: 26th Electronic Materials Symposium
  • Place of Presentation: Shiga, Japan
  • Year and Date: 2007-07-06
• [Presentation] Raditive and nonradiative processes in (Al,In,Ga)N alloy films (2007)
  • Author(s): S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota
  • Organizer: 14th Semiconducting and Insulating Materials Conference
  • Place of Presentation: Fayetteville, Arkansas, USA
  • Year and Date: 2007-05-15
• [Presentation] Radiative and nonradiative processes in (Al, In, Ga)N alloy films (2007)
  • Author(s): S. F, Chichibu
  • Organizer: 14th Smiconducting and Insulating Materials Conference (SIMC-XIV)
  • Place of Presentation: Fayetteville, Arkansas, USA
  • Year and Date: 2007-04-18
• [Book] Technology of Gallium Nitride Crystal Growth, edited by D.Ehrentraut, E.Meissner, and M.Bockowski "Chapter 13, Optical properties of GaN substrates", pp.277-293. ISBN 978-3-642-04828-9 e-ISBN 978-3-642-04830-2 (2009)
  • Author(s): S.F.Chichibu
  • Publisher: Springer Series in Materials Sciences, 2009
• [Book] Advances in Light Emitting Materials(edited by B. Monemar and H.Grimmeiss)("Impact of Point Defects on the Luminescence Properties of (Al,Ga)N", Materials Science Forum 590, pp.233-248(2008) ISBN0-87849-358-1 ISBN-13978-087849-358-6) (2008)
  • Author(s): S.F.Chichibu, A.Uedono, T.Onuma, S.P.DenBaars, U.K.Mishra, J.S.Speck, S.Nakamura
  • Total Pages: 278
  • Publisher: Trans Tech Publications, Stafa-Zuerich
• [Book] Advances in Light Emitting Materials, edited by B. Monemar and H. Grimmeiss, (edited by B. Monemar and H. Grimmeiss), (Impact of Point Defects on the Luminescence Properties of (Al,Ga)N) (2008)
  • Author(s): S. F. Chichibu, A. Uedono, T. Onuma, S. P. DenBaars, U. K. Mishra, J. S. Speck and S. Nakamura
  • Total Pages: 278
  • Publisher: Stafa-Zuerich
• [Book] Advances in Light Emitting Materials (2008)
  • Author(s): S. F. Chichibu
  • Total Pages: 16
  • Publisher: Trans Tech Publications
• [Remarks] ホームページ等
  • URL: http://www.sakura.cc.tsukuba.ac.jp/~slowpos1/
• [Remarks] 秩父重英,第41回市村学術賞(功績賞)受賞「Inを含む窒化物半導体混晶の光物性研究」
• [Remarks] 2008年度 応用物理学会論文賞「JJAP論文賞」, 論文名:K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu, "Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes", Jpn. J. Appl. Phys. 46,, 2007,. L187-L189
• [Remarks] 第7回 (2008年) ドコモ・モバイル・サイエンス賞 基礎科学部門優秀賞 「非視認通信および表示・照明用III族窒化物半導体の物性研究」
• [Remarks] [学会賞・受賞等]
• [Remarks] ・2008年度応用物理学会論文賞「JJAP論文賞」, 論文名 : Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes, 掲載誌 : Japanese Journal of Applied Physics Vol. 46, No. 9, 2007, pp. L187-L189, 著者 : Kuniyoshi Okamoto, Hiroaki Ohta, Shigefusa F. Chichibu, Jun Ichihara, and Hidemi Takasu
• [Remarks] ・第7回(2008年)ドコモ・モバイル・サイエンス賞基礎科学部門優秀賞, 「非視認通信および表示・照明用III族窒化物半導体の物性研究」
• [Remarks] 雑誌記事等への引用など
• [Remarks] ・第7回(2008年)ドコモ・モバイル・サイエンス賞基礎科学部門優秀賞, 「非視認通信および表示・照明用III族窒化物半導体の物性研究」
• [Remarks] ・平成19年版科学技術白書映像集「科学技術振興の成果」(文部科学省)(2008年4月), 第9章「色の発明が生活を豊かに/青色発光ダイオード」に研究成果紹介
• [Remarks]
  • URL: http://www.tagen.tohoku.ac.jp/labo/chichibu/poster/poster.html
• [Patent(Industrial Property Rights)] 紫外線窒化物半導体発光素子およびその製造方法 (2008)
  • Inventor(s): 秩父重英
  • Industrial Property Rights Holder: 東北大学・三菱化学
  • Industrial Property Number: 2008-219525
  • Filing Date: 2008-08-28
• [Patent(Industrial Property Rights)] 紫外線窒化物半導体発光素子およびその製造方法 (2007)
  • Inventor(s): 秩父重英,尾沼猛儀,小山享宏,宗田孝之,池田大勝
  • Industrial Property Rights Holder: 東北大学・早稲田大学
  • Industrial Property Number: 2007-297191
  • Filing Date: 2007-11-15
• [Patent(Industrial Property Rights)] 紫外線窒化物半導体発光素子およびその製造方法 (2007)
  • Inventor(s): 秩父, 重英・尾沼, 猛儀・小山, 享宏・宗田, 孝之・池田, 大勝
  • Industrial Property Rights Holder: 東北大学・早稲田大学
  • Filing Date: 2007-11-15