| Budget Amount *help |
¥66,200,000 (Direct Cost: ¥66,200,000)
Fiscal Year 2010: ¥11,600,000 (Direct Cost: ¥11,600,000)
Fiscal Year 2009: ¥11,600,000 (Direct Cost: ¥11,600,000)
Fiscal Year 2008: ¥11,600,000 (Direct Cost: ¥11,600,000)
Fiscal Year 2007: ¥15,700,000 (Direct Cost: ¥15,700,000)
Fiscal Year 2006: ¥15,700,000 (Direct Cost: ¥15,700,000)
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| Research Abstract |
We have developed a pulsed excitation deposition (PXD) technique for a low-temperature growth of InN-related semiconductors. We have succeeded in the growth of high quality InN, InAlN, and InGaN films by the use of PXD low-temperature growth. It was also found that it is possible to grow n-and p-type nitride films and to form a hetero-junction with an atomically flat interface by PXD. Fabrication of nitride-based devices such as light emitting diodes was demonstrated. These results indicate that the PXD low-temperature growth is suitable for the fabrication of InN-based optical and electronic devices.
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