A research on InAlN-based tandem solar cells
| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
|---|
| Project/Area Number |
18069005
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Science and Engineering
|
|---|
| Research Institution | University of Fukui |
|---|
Principal Investigator |
YAMAMOTO Akio University of Fukui, 大学院・工学研究科, 教授 (90210517)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
HASHIMOTO Akihiro 福井大学, 大学院・工学研究科, 准教授 (10251985)
FUKUI Kazutoshi 福井大学, 大学院・工学研究科, 教授 (80156752)
|
|---|
| Project Period (FY) |
2006 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥65,400,000 (Direct Cost: ¥65,400,000)
Fiscal Year 2010: ¥6,600,000 (Direct Cost: ¥6,600,000)
Fiscal Year 2009: ¥7,500,000 (Direct Cost: ¥7,500,000)
Fiscal Year 2008: ¥7,700,000 (Direct Cost: ¥7,700,000)
Fiscal Year 2007: ¥20,100,000 (Direct Cost: ¥20,100,000)
Fiscal Year 2006: ¥23,500,000 (Direct Cost: ¥23,500,000)
|
|---|
| Keywords | 高効率太陽光発電材料・素子 / InAlN / InGaN / ヘテロ構造 / MOVPE / InAlN/InGaNヘテロ構造 / Mgドーピング / Cp_2Mg / 光起電力 / 白金族触媒援用MOVPE / hetero-structure / NH3 cracking / Pt catalyst / 結晶成長 / 半導体物性 / Growth pressure / Parasitic reaction / Raman scattering / SNOM / Mg doping / タンデム太陽電池 / 相分離 / X線ロッキングカーブ半値幅 / フォトルミネッセンス |
|---|
| Research Abstract |
MOVPE growth of InAlN, InGaN and InAlN/InGaN hetero-structures has been studied in order to develop basic technologies for InN-based tandem solar cells. The MOVPE growth of InAlN was performed at 730 Torr at a substrate temperature in the range 600-700°C. A single-crystalline InAlN films with an In content of 1-0.55 were successfully grown by adjusting growth temperature and TMI/(TMI+TMA) molar ratio. Such films showed strong photoluminescence even at room temperature. For InGaN, single crystalline films with full composition range were successfully grown by changing growth temperature and TMI/(TMI+TEG) molar ratio. P-type In_xGa_<1-x>N with In content up to 0.25 was prepared using Cp_2Mg as Mg source. Based on these achievements, a n-In_<0.3>Al_<0.7>N/p-In_<0.2>Ga_<0.8>N hetero-structure was successfully prepared for the first time and its photo-response was confirmed.
|
Report
(7 results)
Research Products
(118 results)
