| Budget Amount *help |
¥65,400,000 (Direct Cost: ¥65,400,000)
Fiscal Year 2010: ¥6,600,000 (Direct Cost: ¥6,600,000)
Fiscal Year 2009: ¥7,500,000 (Direct Cost: ¥7,500,000)
Fiscal Year 2008: ¥7,700,000 (Direct Cost: ¥7,700,000)
Fiscal Year 2007: ¥20,100,000 (Direct Cost: ¥20,100,000)
Fiscal Year 2006: ¥23,500,000 (Direct Cost: ¥23,500,000)
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| Research Abstract |
MOVPE growth of InAlN, InGaN and InAlN/InGaN hetero-structures has been studied in order to develop basic technologies for InN-based tandem solar cells. The MOVPE growth of InAlN was performed at 730 Torr at a substrate temperature in the range 600-700°C. A single-crystalline InAlN films with an In content of 1-0.55 were successfully grown by adjusting growth temperature and TMI/(TMI+TMA) molar ratio. Such films showed strong photoluminescence even at room temperature. For InGaN, single crystalline films with full composition range were successfully grown by changing growth temperature and TMI/(TMI+TEG) molar ratio. P-type In_xGa_<1-x>N with In content up to 0.25 was prepared using Cp_2Mg as Mg source. Based on these achievements, a n-In_<0.3>Al_<0.7>N/p-In_<0.2>Ga_<0.8>N hetero-structure was successfully prepared for the first time and its photo-response was confirmed.
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