| Budget Amount *help |
¥64,000,000 (Direct Cost: ¥64,000,000)
Fiscal Year 2010: ¥10,400,000 (Direct Cost: ¥10,400,000)
Fiscal Year 2009: ¥11,200,000 (Direct Cost: ¥11,200,000)
Fiscal Year 2008: ¥12,800,000 (Direct Cost: ¥12,800,000)
Fiscal Year 2007: ¥13,600,000 (Direct Cost: ¥13,600,000)
Fiscal Year 2006: ¥16,000,000 (Direct Cost: ¥16,000,000)
|
|---|
| Research Abstract |
For high In-content InGaN, we proposed to use {11-22} semipolar planes and demonstrated high radiative recombination probabilities in semipolar InGaN quantum wells (QWs). Furthermore, LEDs emitting in the blue to red spectral region were fabricated on this semipolar {11-22} plane. In addition, to assess optical properties in InGaN QWs, a scanning near-field optical microscope that uses two independent fiber probes was developed, by which carrier dynamics were visualized. For high Al-content AlGaN, we first established the growth method to obtain high quality films on sapphire (0001) substrates. The guideline to extract intense emission from AlGaN QWs grown on the (0001) plane was clarified. Based on this guideline, high power efficiency (max. 40%) and high emission power (max 100mW) were achieved at ~240nm from an AlGaN QW pumped by an electron beam.
|
