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Reproducible growth technique for GaInNAs and its application to long-wavelength laser diodes

Planned Research

Project AreaOptoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
Project/Area Number 18069008
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionOsaka University

Principal Investigator

KONDOW Masahiko  Osaka University, 工学研究科, 教授 (90403170)

Co-Investigator(Kenkyū-buntansha) FUJIWARA Yasufumi  大阪大学, 工学研究科, 教授 (10181421)
MORI Nobuya  大阪大学, 工学研究科, 准教授 (70239614)
MOMOSE Hideki  大阪大学, 低温センター, 助教 (80260636)
ISHIKAWA Fumitaro  大阪大学, 工学研究科, 助教 (60456994)
MORIFUJI Masato  大阪大学, 工学研究科, 助教 (00230144)
Project Period (FY) 2006 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥70,300,000 (Direct Cost: ¥70,300,000)
Fiscal Year 2010: ¥5,100,000 (Direct Cost: ¥5,100,000)
Fiscal Year 2009: ¥6,400,000 (Direct Cost: ¥6,400,000)
Fiscal Year 2008: ¥8,600,000 (Direct Cost: ¥8,600,000)
Fiscal Year 2007: ¥26,200,000 (Direct Cost: ¥26,200,000)
Fiscal Year 2006: ¥24,000,000 (Direct Cost: ¥24,000,000)
KeywordsGaInNAs / 半導体レーザ / 分子線エピタキシー / フォトルミネッセンス高品質化 / Al混入 / フォトルミネッセンス / 高品質化 / Al / フォトニック結晶 / 誘導放出 / AlAs / 散乱 / 活性窒素 / GaInNAS / AlAS / 結晶性 / フオトルミネッセンス / 新半導体材料 / 窒素 / 分子線ビームエピタキシー / ビューポート
Research Abstract

We pursuit the reproducible growth of high-quality long-wavelength emitting GaInNAs by molecular beam epitaxy (MBE). Examining the effect of nitrogen introduction and its correlation between impurity incorporation, we find the source species especially Al is unintentionally incorporated into the epitaxial layer followed by the concomitant incorporation of O and C. A model considering gas-phase scattering can explain the phenomena, suggesting that a large amount of N_2 gas causes the scattering of residual Al atoms with an occasional collision resulting in the atoms directed toward the substrate. Hence, the reduction of the sublimated Al beam at the growth period can suppress the incorporation of the unintentional impurities, realizing highly-pure epitaxial layer.

Report

(7 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report   Self-evaluation Report ( PDF )
  • 2007 Annual Research Report
  • 2006 Annual Research Report
  • Research Products

    (58 results)

All 2011 2010 2009 2008 2007 Other

All Journal Article (21 results) (of which Peer Reviewed: 21 results) Presentation (32 results) Remarks (5 results)

  • [Journal Article] Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy2011

    • Author(s)
      F.Ishikawa, S.Fuyuno, K.Higashi, M.Kondow, M.Machida, H.Oji, J.-Y.Son, A.Trampert, K.Umeno, Y.Furukawa, A.Wakahara
    • Journal Title

      Appl.Phys.Lett. 98

      Pages: 121915-121915

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Infrared Absorption Spectrum of InNP2010

    • Author(s)
      M.Kondow, F.Ishikawa, K.Umeno, Y.Furukawa, A.Wakahara
    • Journal Title

      Appl.Phys.Exp. 3

      Pages: 11001-11001

    • NAID

      10027012827

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Infrared Absorption Spectrum of InNP2010

    • Author(s)
      M.Kondow, F.Ishikawa, K.Umeno, Y.Furukawa, A.Wakahara
    • Journal Title

      Applied Physics Express

      Volume: 3

    • NAID

      10027012827

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Unintentional source incorporation in plasma-assisted molecular beam epitaxy2009

    • Author(s)
      F.Ishikawa, S.Wu, M.Kato, M.Uchiyama, K.Higashi, M.Kondow
    • Journal Title

      Jpn.J.Appl.Phys. 48

      Pages: 125501-125501

    • NAID

      40016890512

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Unintentional Aluminum Incorporation Related to the Introduction of Nitrogen Gas During the Plasma-Assisted Molecular Beam Epitaxy2009

    • Author(s)
      F.Ishikawa, S.D.Wu, M.Kato, M.Uchiyama, K.Higashi, M.Kondow
    • Journal Title

      J.Cryst.Growth 311

      Pages: 1646-1646

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Novel Design of Current Driven Photonic Crystal Laser Diode2009

    • Author(s)
      M.Morifuji, Y.Nakaya, T.Mitamura, M.Kondow
    • Journal Title

      IEEE Photon.Tech.Let. 21

      Pages: 513-513

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors2009

    • Author(s)
      M.Kondow, M.Uchiyama, M.Morifuji, S.D.Wu, H.Momose, S.Fukushima, A.Fukuyama, T.Ikari
    • Journal Title

      Applied Physics Express

      Volume: 2

    • NAID

      10025085563

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Selective Oxidation of AlGaAs for Photonic Crystal Laser2009

    • Author(s)
      M.Kondow, T.Kawano, H.Momose
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 48

    • NAID

      80020301190

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Plasma Conditions on the Growth of GaNAs by Plasma-Assisted Molecular-Beam Epitaxy2009

    • Author(s)
      M.Uchiyama, F.Ishikawa, M.Kondow
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 48

    • NAID

      40016704632

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Unintentional source incorporation in plasma-assisted molecular beam epitaxy2009

    • Author(s)
      F.Ishikawa, S.D.Wu, M.Kato, M.Uchiyama, K.Higashi, M.Kondow
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 48

    • NAID

      40016890512

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Selective Oxidation of AlGaAs for Photonic Crystal Laser2009

    • Author(s)
      近藤正彦、河野孝透、百瀬英毅
    • Journal Title

      Japanese Journal of Applied Physics (印刷中)

    • NAID

      80020301190

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Novel Design of Current Driven Photonic Crystal Laser Diode2009

    • Author(s)
      森藤正人、中矢陽介、三田村昴、近藤正彦
    • Journal Title

      IEEE Photonics Technology Letters Volume 21 Issue 8

      Pages: 513-515

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Experimental study on hydrostatic and shear deformation potential in GaInNAs alloys using piezoelectric photothermal spectroscopy2008

    • Author(s)
      碇哲雄、福嶋晋一、大田豊、福山敦彦、Wu ShuDoung、石川史太郎、近藤正彦
    • Journal Title

      Physical Review B Vol. 77

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy2008

    • Author(s)
      S. D., Wu・M., Kato・M., Uchiyama・K., Higashi・F., Ishikawa・M., Kondow
    • Journal Title

      Applied Physics Express 1

    • NAID

      10025079674

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Band gap engineering with sub-monolayer nitrogen insertion into InGaAs/GaAs quantum well

    • Author(s)
      Fumitaro Ishikawa, Masato Morifuji, Kenichi Nagahara, Masayuki Uchiyama, Kotaro Higashi, Masahiko Kondow
    • Journal Title

      Journal of Crystal Growth

      Volume: (印刷中)

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Dry Etching of Al-rich AlGaAs for Photonic Crystal Fabrication

    • Author(s)
      Masaya Mochizuki, Yuta Kitabayashi, Tomoya Nakajima, Daiki Satoi, Fumitaro Ishikawa, Masahiko Kondow, Makoto Hara, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: (印刷中)

    • NAID

      210000070332

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Reduction of S-parameter by the Introduction of Nitrogen in GaNAs : Positron Annihilation and Photoluminescence Spectroscopy Study

    • Author(s)
      Hiroki Nakamoto, Fumitaro Ishikawa, Masahiko Kondow, Yushi Ohshima, Atsushi Yabuuchi, Masataka Mizuno, Hideki Araki, Yasuharu Shirai
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: (印刷中)

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Unintentional Aluminum incorporation related to the introduction of Nitrogen gas during the plasma-assisted molecular beam epitaxy

    • Author(s)
      F. Ishikawa, S.D. Vu, M. Kato, M. Uchiyama, K. Higashi and M. Kondow
    • Journal Title

      Journal of Crystal Growth (印刷中)

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Novel Design of Current Driven Photonic Crystal Laser Diode

    • Author(s)
      M. Morifuji, Y. Nakaya, T. Mitamura and M. Kondow
    • Journal Title

      IEEE Photonics Technology Letters (印刷中)

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of the unintientional incorporation of Al during the molecular beam epitaxial growth of GaInNAs quantum well

    • Author(s)
      S. D., Wu・M., Kato・M., Uchiyama・K., Higashi・F., Ishikawa・M., Kondow
    • Journal Title

      Physica Status Solidi (C) (印刷中)

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Experimental study on hydrostatic and shear deformation potential in GaInNAs alloys using piezoelectric photothermal spectroscopy

    • Author(s)
      T., Ikari・S., Fukushima・Y., Ohta・A., Fukuyama・S. D., Wu・F., Ishikawa・M., Kondow
    • Journal Title

      Physical Review B (印刷中)

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Presentation] GaInNAs利得媒質とAlOxスラブを有するフォトニック結晶微小共振器構造の作製と評価2011

    • Author(s)
      久木田健太郎, 永友大士, 後藤洋昭, 中尾亮, 中野勝成, 植田慎二, 石川史太郎, 百瀬英毅, 近藤正彦
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      厚木
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] 窒素原子層を用いたIII-V族半導体量子構造2011

    • Author(s)
      石川史太郎, 森藤正人, 古瀬慎一朗, 角谷健吾, 近藤正彦
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      厚木
    • Year and Date
      2011-03-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaInNAsのフォトニック結晶微小共振器レーザ向け利得媒質応用2011

    • Author(s)
      永友大士, 久木田健太郎, 後藤洋昭, 中尾亮, 中野勝成, 石川史太郎, 近藤正彦
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      厚木
    • Year and Date
      2011-03-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] Ga(In)NAs系における発光ピークの温度変化の起源-その22011

    • Author(s)
      江村修一, 石川史太郎, 近藤正彦, 朝日一
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      厚木
    • Year and Date
      2011-03-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] Reduction of S-parameter by the Introduction of Nitrogen in GaNAs : Positron Annihilation and Its Comparative Study with Photolu minescence Spectroscopy2010

    • Author(s)
      H.Nakamoto, F.Ishikawa, M.Kondow, Y.Oshima, A.Yabuchi, M.Mizuno, H.Araki, Y.Shirai
    • Organizer
      2010 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tokyo
    • Year and Date
      2010-09-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] Dry Etching of Al-rich AlxGa1-xAs Holes with High Aspect Ratio for Photonic Crystal Fabrication2010

    • Author(s)
      M.Mochizuki, T.Nakajima, D.Satoi, F.Ishikawa, M.Kondow, M.Hara, H.Aoki
    • Organizer
      2010 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tokyo
    • Year and Date
      2010-09-23
    • Related Report
      2010 Final Research Report
  • [Presentation] Dry Etching of Al-rich Al_xGa_<1-x>As Holes with High Aspect Ratio for Photonic Crystal Fabrication2010

    • Author(s)
      M.Mochizuki, T.Nakajima, D.Satoi, F.Ishikawa, M.Kondow, M.Hara, H.Aoki
    • Organizer
      2010 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tokyo
    • Year and Date
      2010-09-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] 高Al組成AlGaAsの水蒸気酸化によって作製したAlOxの分光エリプソメトリー評価2010

    • Author(s)
      平井裕一郎, 山田高寛, 石川史太郎, 近藤正彦
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎
    • Year and Date
      2010-09-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] ドライエッチングがGaAs系半導体素子構造諸特性に与える影響2010

    • Author(s)
      渡辺章王, 石川史太郎, 近藤正彦
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎
    • Year and Date
      2010-09-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] 2次元フォトニック結晶における共振器と導波路との光結合解析2010

    • Author(s)
      長原健一, 森藤正人, 近藤正彦
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎
    • Year and Date
      2010-09-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] 電流注入型フォトニック結晶半導体レーザにおけるキャリアの影響2010

    • Author(s)
      中尾亮, 森藤正人, 近藤正彦
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] 窒素原子層を用いたIII-V族半導体量子構造のバンドエンジニアリング2010

    • Author(s)
      石川史太郎, 森藤正人, 長原健一, 近藤正彦
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaInNAs量子井戸における微細加工発光デバイス応用有効性の検討2010

    • Author(s)
      後藤洋昭, 中本弘毅, 石川史太郎, 近藤正彦
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaAs系2次元フォトニック結晶共振器における発光特性の欠陥構造依存性2010

    • Author(s)
      中野勝成, 石川史太郎, 森藤正人, 近藤正彦
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Ga(In)NAs系における発光ピークの温度変化の起源2010

    • Author(s)
      江村修一, 中本弘毅, 石川史太郎, 近藤正彦, 朝日一
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] AlGaAs/GaAs量子井戸への窒素単原子層導入がバンド構造に与える影響2010

    • Author(s)
      古瀬慎一朗, 中本弘毅, 石川史太郎, 近藤正彦
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Direct band engineering with sub-monolayer nitride into III-V quantum system2010

    • Author(s)
      F.Ishikawa, M.Morifuji, S.Furuse, K.Nagahara, M.Uchiyama, K.Higashi, M.Kondow
    • Organizer
      The 16th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Berlin
    • Year and Date
      2010-08-24
    • Related Report
      2010 Final Research Report
  • [Presentation] Direct band engineering with sub-monolayer nitride into III-V quantum system2010

    • Author(s)
      F.Ishikawa, M.Morifuji, S.Furuse, K.Nagahara, M.Uchiyama, K.Higashi, M.Kondow
    • Organizer
      The 16th International Conference on MolecularBeam Epitaxy
    • Place of Presentation
      Berlin(ドイツ)
    • Year and Date
      2010-08-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] Temperature dependence of photoluminescence peak energy in Ga(In)NAs2010

    • Author(s)
      S.Emura, H.Nakamoto, F.Ishikawa, M.Kondow, H.Asahi
    • Organizer
      The 30th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Seoul
    • Year and Date
      2010-07-27
    • Related Report
      2010 Final Research Report
  • [Presentation] Effect of rapid thermal annealing on well width dependences of exciton binding energy in GaInNAs/GaAs single quantum wells2010

    • Author(s)
      T.Ikari, H.Yokoyama, K.Sakai, A.Fukuyama, M.Kondow
    • Organizer
      European Materials Research Society 2010 Spring Meeting
    • Place of Presentation
      Strasbourg(フランス)
    • Year and Date
      2010-06-10
    • Related Report
      2010 Annual Research Report
  • [Presentation] Determination of the band gap and its exciton binding energy of 100 nm thick GaInNAs films by using a piezoelectric photo-thermal and a photo-reflectance spectroscopy2010

    • Author(s)
      A.Fukuyama, T.Ikari, M.Yano, K.Sakai, H.Yokoyama, M.Kondow
    • Organizer
      European Materials Research Society 2010 Spring Meeting
    • Place of Presentation
      Strasbourg(フランス)
    • Year and Date
      2010-06-10
    • Related Report
      2010 Annual Research Report
  • [Presentation] Reduction of S-parameter by the Introduction of Nitrogen in GaNAs : Positron Annihilation and Its Comparative Study with Photoluminescence Spectroscopy2010

    • Author(s)
      H.Nakamoto, F.Ishikawa, M.Kondow, Y.Oshima, A.Yabuchi, M.Mizuno, H.Araki,Y.Shirai
    • Organizer
      2010 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tokyo
    • Related Report
      2010 Final Research Report
  • [Presentation] Growth and Luminescence Characterization of Dilute InPN alloys Grown by Solid Source Molecular Beam Epitaxy2009

    • Author(s)
      K.Umeno, Y.Furukawa, N.Urakami, S.Mitsuyoshi, F.Ishikawa, H.Yonezu, A.Wakahara, M.Kondow
    • Organizer
      26th North American Molecular Beam Epitaxy Conference
    • Place of Presentation
      Princeton, USA
    • Year and Date
      2009-08-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] Novel design of current-driven photonic crystal laser diode2009

    • Author(s)
      M.Morifuji, Y.Nakaya, T.Mitamura M.Kondow
    • Organizer
      2009 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      Osaka
    • Year and Date
      2009-05-15
    • Related Report
      2010 Final Research Report
  • [Presentation] Novel design of current-driven photonic crystal laser diode2009

    • Author(s)
      M.Morifuji, Y.Nakaya, T.Mitamura, M, Kondow
    • Organizer
      2009 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      Suita, Japan
    • Year and Date
      2009-05-15
    • Related Report
      2009 Annual Research Report
  • [Presentation] Design of Current-Driven Photonic Crystal Lasers for optical communications2008

    • Author(s)
      M. Morifuji, Y. Nakaya, T. Mitamura and M. Kondow
    • Organizer
      The 4th Handai Nanoscience and Nanotechnology International Symposium
    • Place of Presentation
      大阪
    • Year and Date
      2008-09-29
    • Related Report
      2008 Annual Research Report
  • [Presentation] Unintentional incorporation of Al during the plasma-assisted molecular beam epitaxial growth of dilute nitride semiconductors on AlAs2008

    • Author(s)
      石川史太郎、Wu ShuDong、加藤正和、内山正之、東晃太朗、近藤正彦
    • Organizer
      The 15th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      バンクーバー・カナダ
    • Year and Date
      2008-08-05
    • Related Report
      2008 Self-evaluation Report
  • [Presentation] Unintentional incorporation of Al during the plasma-assisted molecular beam epitaxial growth of dilute nitride semiconductors on AlAs2008

    • Author(s)
      F. Ishikawa, S.D. Wu, M. Kato, M. Uchiyama, K. Higashi and M. Kondow
    • Organizer
      15th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Vancouver, Canada
    • Year and Date
      2008-08-05
    • Related Report
      2008 Annual Research Report
  • [Presentation] Experimental study on static dielectric constant of GaInNAs2008

    • Author(s)
      内山正之、近藤正彦、Wu ShuDong、百瀬英毅、森藤正人、碇哲雄、福嶋晋一、福山敦彦
    • Organizer
      The 2008 IEEE 20th Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      ヴェルサイユ・フランス
    • Year and Date
      2008-05-28
    • Related Report
      2008 Self-evaluation Report
  • [Presentation] Experimental study on static dielectric constant of GaInNAs2008

    • Author(s)
      M. Uchiyama, M. Kondow, S. D. Wu, H. Momose, M. Morifuji, T. Ikari, S. Fukushima, and A. Fukuyama
    • Organizer
      The 2008 IEEE 20th Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Versailles, France
    • Year and Date
      2008-05-28
    • Related Report
      2008 Annual Research Report
  • [Presentation] Selective oxidation of AlGaAs for a next-generation laser made of photonic crystal2008

    • Author(s)
      H. Momose, T. Kawano, F. Ishikawa, M. Morifuji, and M. Kondow
    • Organizer
      The 2008 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      大阪
    • Year and Date
      2008-05-23
    • Related Report
      2008 Annual Research Report
  • [Presentation] Passivation of the Impact of Aluminum for the Growth of High Optical Quality GaInNAs by Molecular Beam Epitaxy2007

    • Author(s)
      S.D, Wu・M, Kato・M, Uchiyama・K, Higashi・F, Ishikawa・M, Kondow
    • Organizer
      The 34th international symposium on compaund semiconductors
    • Place of Presentation
      東京
    • Year and Date
      2007-09-16
    • Related Report
      2007 Annual Research Report
  • [Remarks] ホームページ

    • URL

      http://www.e3.eei.eng.osaka-u.ac.jp

    • Related Report
      2010 Final Research Report
  • [Remarks]

    • URL

      http://www.e3.eei.eng.osaka-u.ac.jp/

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.e3.eei.eng.osaka-u.ac.jp/

    • Related Report
      2009 Annual Research Report
  • [Remarks] ホームページ

    • URL

      http://www.e3.eei.eng.osaka-u.ac.jp

    • Related Report
      2008 Self-evaluation Report
  • [Remarks]

    • URL

      http://www.e3.eei.eng.osaka-u.ac.jp/

    • Related Report
      2008 Annual Research Report

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Published: 2006-04-01   Modified: 2018-03-28  

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