| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
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| Project/Area Number |
18069008
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Osaka University |
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Principal Investigator |
KONDOW Masahiko Osaka University, 工学研究科, 教授 (90403170)
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| Co-Investigator(Kenkyū-buntansha) |
FUJIWARA Yasufumi 大阪大学, 工学研究科, 教授 (10181421)
MORI Nobuya 大阪大学, 工学研究科, 准教授 (70239614)
MOMOSE Hideki 大阪大学, 低温センター, 助教 (80260636)
ISHIKAWA Fumitaro 大阪大学, 工学研究科, 助教 (60456994)
MORIFUJI Masato 大阪大学, 工学研究科, 助教 (00230144)
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| Project Period (FY) |
2006 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥70,300,000 (Direct Cost: ¥70,300,000)
Fiscal Year 2010: ¥5,100,000 (Direct Cost: ¥5,100,000)
Fiscal Year 2009: ¥6,400,000 (Direct Cost: ¥6,400,000)
Fiscal Year 2008: ¥8,600,000 (Direct Cost: ¥8,600,000)
Fiscal Year 2007: ¥26,200,000 (Direct Cost: ¥26,200,000)
Fiscal Year 2006: ¥24,000,000 (Direct Cost: ¥24,000,000)
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| Keywords | GaInNAs / 半導体レーザ / 分子線エピタキシー / フォトルミネッセンス高品質化 / Al混入 / フォトルミネッセンス / 高品質化 / Al / フォトニック結晶 / 誘導放出 / AlAs / 散乱 / 活性窒素 / GaInNAS / AlAS / 結晶性 / フオトルミネッセンス / 新半導体材料 / 窒素 / 分子線ビームエピタキシー / ビューポート |
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| Research Abstract |
We pursuit the reproducible growth of high-quality long-wavelength emitting GaInNAs by molecular beam epitaxy (MBE). Examining the effect of nitrogen introduction and its correlation between impurity incorporation, we find the source species especially Al is unintentionally incorporated into the epitaxial layer followed by the concomitant incorporation of O and C. A model considering gas-phase scattering can explain the phenomena, suggesting that a large amount of N_2 gas causes the scattering of residual Al atoms with an occasional collision resulting in the atoms directed toward the substrate. Hence, the reduction of the sublimated Al beam at the growth period can suppress the incorporation of the unintentional impurities, realizing highly-pure epitaxial layer.
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