| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
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| Project/Area Number |
18069009
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Kogakuin University |
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Principal Investigator |
KAWANISHI Hideo Kogakuin University, 工学部, 教授 (70016658)
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| Co-Investigator(Kenkyū-buntansha) |
長谷川 文夫 工学院大学, 工学部, 教授 (70143170)
本田 徹 工学院大学, 工学部, 教授 (20251671)
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| Co-Investigator(Renkei-kenkyūsha) |
HONDA Tooru 工学院大学, 工学部, 教授 (20251671)
長谷川 文夫 工学院大学, 工学部, 教授 (70143170)
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| Project Period (FY) |
2006 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥64,900,000 (Direct Cost: ¥64,900,000)
Fiscal Year 2010: ¥6,400,000 (Direct Cost: ¥6,400,000)
Fiscal Year 2009: ¥7,100,000 (Direct Cost: ¥7,100,000)
Fiscal Year 2008: ¥9,200,000 (Direct Cost: ¥9,200,000)
Fiscal Year 2007: ¥8,500,000 (Direct Cost: ¥8,500,000)
Fiscal Year 2006: ¥33,700,000 (Direct Cost: ¥33,700,000)
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| Keywords | 窒化物半導体 / 深紫外半導体レーザ / p型不純物 / 炭素 / AlGaN / 交互供給法 / 量子井戸 / p型半導体 / ドーピング材料 / ワイドギャップ / エピタキシャル成長 / エピタキシル成長 / 歪み制御 / バッフア層 / バッファ層 / エビタキシャル成長 |
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| Research Abstract |
AlGaN semiconductor is one of the promising widest band-gap semiconductor, by which UV and deep-UV light emitting devices and also high power electronics devices could be achieved. However, the semiconductor has several difficult problems to be solved, such as (1)How we achieve the high quality AlGaN, (2)How we achieve high carrier density and low resistivity p-type AlGaN for device applications. In this study, we have proposed the "Alternate Source-Feeding Epitaxial technique" by which extremely high quality AlGanN will be achieved. And, We have achieved high carrier density p-type AlGaN with up to 55% of Al solid composition using "Carbon" as an acceptor in the AlGaN, then we have also demonstrated the first p-n junction using the carbon-doped p-type AlGaN.
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