| Budget Amount *help |
¥131,000,000 (Direct Cost: ¥131,000,000)
Fiscal Year 2010: ¥20,900,000 (Direct Cost: ¥20,900,000)
Fiscal Year 2009: ¥20,900,000 (Direct Cost: ¥20,900,000)
Fiscal Year 2008: ¥23,900,000 (Direct Cost: ¥23,900,000)
Fiscal Year 2007: ¥26,800,000 (Direct Cost: ¥26,800,000)
Fiscal Year 2006: ¥38,500,000 (Direct Cost: ¥38,500,000)
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| Research Abstract |
Realizing high-performance of red to near infrared InGaN-based emitters is one of the important challenging issues to be attained in the nitride semiconductor field. For developing the basic technology of the red to infrared emitters, in this study, GaN nanocolumns have been energetically investigated, fabricating regularly arranged InGaN-based nanocolumn LEDs, observing green range optically pumped lasing emissions from the InGaN-based nanocolumn arrays, growing high In-content InGaN on the top of the regularly arranged GaN nanocolumns, demonstrating infrared emissions (1.46 ・m in wavelength) from InGaN-based pn junction nanocolumn LEDs, developing selective area growth of high crystalline-quality InN microcrystals and so on.
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