Development of basic technology for red to infrared optical devices using AlGaInN system
| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
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| Project/Area Number |
18069010
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Sophia University |
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Principal Investigator |
KISHINO Katsumi Sophia University, 理工学部, 教授 (90134824)
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| Co-Investigator(Kenkyū-buntansha) |
KIKUCHI Akihiko 上智大学, 理工学部, 准教授 (90266073)
NOMURA Ichirou 上智大学, 理工学部, 准教授 (00266074)
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| Project Period (FY) |
2006 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥131,000,000 (Direct Cost: ¥131,000,000)
Fiscal Year 2010: ¥20,900,000 (Direct Cost: ¥20,900,000)
Fiscal Year 2009: ¥20,900,000 (Direct Cost: ¥20,900,000)
Fiscal Year 2008: ¥23,900,000 (Direct Cost: ¥23,900,000)
Fiscal Year 2007: ¥26,800,000 (Direct Cost: ¥26,800,000)
Fiscal Year 2006: ¥38,500,000 (Direct Cost: ¥38,500,000)
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| Keywords | AlGaInN / 窒化物半導体 / ナノコラム / 結晶成長 / InN / 分子線エピタキシー / 光源技術 / 選択成長 / AIGaInA / 量子準位間遷移 / A1GaInN |
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| Research Abstract |
Realizing high-performance of red to near infrared InGaN-based emitters is one of the important challenging issues to be attained in the nitride semiconductor field. For developing the basic technology of the red to infrared emitters, in this study, GaN nanocolumns have been energetically investigated, fabricating regularly arranged InGaN-based nanocolumn LEDs, observing green range optically pumped lasing emissions from the InGaN-based nanocolumn arrays, growing high In-content InGaN on the top of the regularly arranged GaN nanocolumns, demonstrating infrared emissions (1.46 ・m in wavelength) from InGaN-based pn junction nanocolumn LEDs, developing selective area growth of high crystalline-quality InN microcrystals and so on.
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Report
(7 results)
Research Products
(249 results)
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[Presentation] Random Laser Action in GaN2008
Author(s)
M. Sakai, K. Kishino, A. Kiku chi and H. Sekiguchi
Organizer
International Workshop on Nitride Semiconductors (IWN2008)
Place of Presentation
Montreux, Switzerland
Related Report
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[Presentation] Intersubband photonic devices by III-V nitrides2008
Author(s)
P., Holmstrom・X., Y., Liu・G., Kobayashi・T., Aggerstam・A., Kikuchi・K., Kishino・S., Lourdudoss・T., G., Andersson・L., Thyle
Organizer
SPIE Asia-Pacific Optical Communications (APOC)2008
Place of Presentation
Wuhan, China
Related Report
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[Presentation] GaN/AlGaN Nanocolumn Ultraviolet Light Emitting Diodes on N-(III) Si Substrates Grown by Rf-Plasma Assisted Molecular Beam Epitaxy2007
Author(s)
H., Sekiguchi・S., Ishizawa・K., Sakamoto・G., Kobayashi・J., Tanaka・K., Kato・A., Kikuchi・K., Kishino
Organizer
7th International Conference of Nitride Semicond uctors (ICNS 7)
Place of Presentation
Las Vegas, Nevada, USA
Related Report
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