Watt class high power ultraviolet laser diode

• Project Area: Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
• Project/Area Number: 18069011
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Meijo University
• Principal Investigator: AMANO Hiroshi Meijo University, 工学研究科, 教授 (60202694)
• Co-Investigator(Kenkyū-buntansha): KAMIYAMA Satoshi 名城大学, 理工学部, 教授 (10340291) ; IWAYA Motoaki 名城大学, 理工学部, 准教授 (40367735)
• Project Period (FY): 2006 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥139,100,000 (Direct Cost: ¥139,100,000); Fiscal Year 2010: ¥17,400,000 (Direct Cost: ¥17,400,000); Fiscal Year 2009: ¥17,400,000 (Direct Cost: ¥17,400,000); Fiscal Year 2008: ¥17,400,000 (Direct Cost: ¥17,400,000); Fiscal Year 2007: ¥30,400,000 (Direct Cost: ¥30,400,000); Fiscal Year 2006: ¥56,500,000 (Direct Cost: ¥56,500,000)
• Keywords: AlN / AlGaN / MOVPE / UV・DUV / LED・LD / 紫外LED / 紫外LD / 内部量子効率 / 低転位 / 紫外半導体レーザ / GaN / 紫外発光ダイオード / デバイスシミュレータ / 発光効率 / 低転位化 / 紫外線レーザ / 窒化アルミニウム / p型 / 結晶欠陥 / 量子効率 / AIN / 昇華法 / AIN基板 / 高温MOVPE / 横方向成長 / 原子ステップ / 転位 / シミュレーション / レーザダイオード

Research Abstract

Metalorganic vapor phase epitaxial (MOVPE) system by which AlN and AlGaN can be grown at high temperature was designed and installed. High temperature MOVPE is found to be very effective to grow high-crystalline quality and low residual impurity AlN and AlGaN. By using high temperature MOVPE system, lateral growth technique can be successfully applied to grow low threading dislocation density (TDD) AlN and AlGaN on a sapphire substrate. Multi quantum well (MQW) structures emitting from 230 nm to 345 nm containing different TDD were systematically grown. Internal quantum efficiency (IQE) of these MQW was found to be uniquely dependent on the TDD. UVA laser diode (LD) was fabricated. Injection efficiency and IQE of the UVA LD was characterized. UV/DUV LEDs with external quantum efficiency over 5% were successfully fabricated. High crystalline quality AlN can be grown by close spaced sublimation method with a growth rate as high as 0.6 mm/h.

Research Products

• [Journal Article] Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method (2011)
  • Author(s): M.Yamakawa, K.Murata, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano, M.Azuma
  • Journal Title: Applied Physics Express 4
  • NAID: 10028209940
  • Peer Reviewed
• [Journal Article] Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer (2011)
  • Author(s): K.Takeda, K.Nagata, T.Ichikawa, K.Nonaka, Y.Ogiso, Y.Oshimura, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano, H.Yoshida, M.Kuwabara, Y.Yamashita, H.Kan
  • Journal Title: physica status solidi (c) Volume: 8 Pages: 464-466
  • Peer Reviewed
• [Journal Article] Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method (2011)
  • Author(s): Masayasu Yamakawa, Kazuki Murata, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Masanobu Azuma
  • Journal Title: Applied Physics Express Volume: 4
  • NAID: 10028209940
  • Peer Reviewed
• [Journal Article] Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells (2011)
  • Author(s): Kazuhito Ban, Jun-ichi Yamamoto, Kenichiro Takeda, Kimiyasu Ide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
  • Journal Title: Applied Physics Express Volume: 4
  • NAID: 10028210215
  • Peer Reviewed
• [Journal Article] Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates (2010)
  • Author(s): Z.Wu, K.Nonaka, Y.Kawai, T.Asai, F.A.Ponce, C.Chen, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Applied Physics Express Volume: 3
  • NAID: 10027441702
  • Peer Reviewed
• [Journal Article] Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy (2010)
  • Author(s): D.Iida, K.Tamura, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Journal of Crystal Growth Volume: 312 Pages: 3131-3135
  • Peer Reviewed
• [Journal Article] High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient (2010)
  • Author(s): K.Nagata, T.Ichikawa, K.Takeda, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: physica status solidi (a) Volume: 207 Pages: 1393-1396
  • Peer Reviewed
• [Journal Article] Defects in highly Mg-doped AlN (2010)
  • Author(s): K.Nonaka, T.Asai, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: physica status solidi (a) Volume: 207 Pages: 1299-1301
  • Peer Reviewed
• [Journal Article] Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer (2010)
  • Author(s): T.Asai, K.Nonaka, K.Ban, K.Nagata, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: physica status solidi (c) Volume: 7 Pages: 2101-2103
  • Peer Reviewed
• [Journal Article] Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers (2010)
  • Author(s): K.Takeda, F.Mori, Y.Ogiso, T.Ichikawa, K.Nonaka, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: physica status solidi (c) Volume: 7 Pages: 1916-1918
  • Peer Reviewed
• [Journal Article] Improved Efficiency of 255-280 nm AlGaN-Based Light-Emitting Diodes (2010)
  • Author(s): Cyril Pernot, Myunghee Kim, Shinya Fukahori, Tetsuhiko Inazu, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
  • Journal Title: Applied Physics Express Volume: 3
  • NAID: 10027014973
  • Peer Reviewed
• [Journal Article] Atomic layer epitaxy of AlGaN (2010)
  • Author(s): Kentaro Nagamatsu, Daisuke Iida, Kenichiro Takeda, Kensuke Nagata, Toshiaki Asai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
  • Journal Title: physica status solidi (c) Volume: 7 Pages: 2368-2370
  • Peer Reviewed
• [Journal Article] Activation energy of Mg in a-plane Ga_<1-x>In_xN(0<x<0.17) (2009)
  • Author(s): Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
  • Journal Title: Physica Status Solidi B 246 Pages: 1188-1190
  • Peer Reviewed
• [Journal Article] Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films (2009)
  • Author(s): Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Markov, A.V., Yugova, T.G., Petrova, E.A., Amano, H., Kawashima, T., Scherbatchev, K.D., Bublik, V.T.
  • Journal Title: Journal of Applied Physics 105
  • Peer Reviewed
• [Journal Article] Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth (2009)
  • Author(s): Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Markov, A.V., Yakimov, E.B., Vergeles, P.S., Amano, H., Kawashima, T.
  • Journal Title: Journal of Crystal Growth 311 Pages: 2923-2925
  • Peer Reviewed
• [Journal Article] Evidence for Two Mg Related Acceptors in GaN (2009)
  • Author(s): Monemar, B., Paskov, P.P., Pozina, G., Hemmingsson, C., Bergman, J.P., Kawashima, T., Amano, H., Akasaki, I., Paskova, T., Figge, S., et al.
  • Journal Title: Physical Review Letters 102
  • Peer Reviewed
• [Journal Article] Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures.Impact of built-in polarization fields (2009)
  • Author(s): Esmaeili, M., Gholami, M., Haratizadeh, H., Monemar, B., Holtz, P.O., Kamiyama, S., Amano, H., Akasaki, I.
  • Journal Title: Opto-Electronics Review 17 Pages: 293-299
  • Peer Reviewed
• [Journal Article] Growth of thick GaInN on grooved(1011)GaN/(1012)4H-SiC (2009)
  • Author(s): Matsubara, Tetsuya, Senda, Ryota, Iids, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
  • Journal Title: Journal of Crystal Growth 311 Pages: 2926-2928
  • Peer Reviewed
• [Journal Article] Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN (2009)
  • Author(s): Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.
  • Journal Title: Applied Physics Express 2
  • NAID: 10025085540
  • Peer Reviewed
• [Journal Article] Novel UV devices on high-quality AlGaN using grooved underlying layer (2009)
  • Author(s): Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al.
  • Journal Title: Journal of Crystal Growth 311 Pages: 2860-2863
  • Peer Reviewed
• [Journal Article] One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy (2009)
  • Author(s): Iids, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
  • Journal Title: Journal of Crystal Growth 311 Pages: 2887-2890
  • Peer Reviewed
• [Journal Article] Relaxation and recovery processes of Al_xGa_<1-x>N grown on AlN underlying layer (2009)
  • Author(s): Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
  • Journal Title: Journal of Crystal Growth 311 Pages: 2850-2852
  • Peer Reviewed
• [Journal Article] Strong emission from GaInN/GaN multiple quantum wells on high-crys talline-quality thick m-plane GaInN underlying layer on grooved GaN (2009)
  • Author(s): Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
  • Journal Title: Applied Physics Express 2
  • Peer Reviewed
• [Journal Article] Activation energy of Mg in Al_<0.25>Ga_<0.75>N and Al_<0.5>Ga_<0.5>N (2009)
  • Author(s): K.Nagamatsu, K.Takeda, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Phys.Status Solidi C 6 Pages: 437-439
  • Peer Reviewed
• [Journal Article] AlN and AlGaN by MOVPE for UV light emitting devices (2008)
  • Author(s): H.Amano, M.Imura, M.Iwaya, S.Kamiyama, I.Akasaki
  • Journal Title: Mater.Sci.Forum 590 Pages: 175-210
  • Peer Reviewed
• [Journal Article] Control of p-type conduction in a-plane Ga_<1-x>In_xN(0<x<0.10)grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy (2008)
  • Author(s): Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
  • Journal Title: Journal of Crystal Growth 310 Pages: 4996-4998
  • Peer Reviewed
• [Journal Article] AlN and AlGaN by MOVPE for UV light emitting devices (2008)
  • Author(s): H. Amano, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
  • Journal Title: Mater. Sci. Forum 590 Pages: 175-210
  • Peer Reviewed
• [Journal Article] Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE (2008)
  • Author(s): K. Nagamatsu, N. Okada, N. Kato, T. Sumii, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  • Journal Title: Phys. Stat. Sol. (c) 5 Pages: 3048-3050
  • Peer Reviewed
• [Journal Article] Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire (2008)
  • Author(s): K. Iida, H. Watanabe, K. Takeda, F. Mori, H. Tsuzuki, Y. Yamashita, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi and A. Bandoh
  • Journal Title: Phys, Stat. Sol. (c) 5 Pages: 2142-2144
  • Peer Reviewed
• [Journal Article] Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates (2008)
  • Author(s): M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki and A. Bandoh
  • Journal Title: Phys, Stat. Sol. (c) 5 Pages: 1582-1584
  • Peer Reviewed
• [Journal Article] Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy (2008)
  • Author(s): N. Kato, S. Sato, H. Sugimura, T. Sumii, N. Okada, M. Imura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi and A. Bandoh
  • Journal Title: Phys, Stat. Sol. (c) 5 Pages: 1559-1561
  • Peer Reviewed
• [Journal Article] High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN (2008)
  • Author(s): K. Nagamatsu, N. Okada, H. Sugimura, H. Tsuzuki, F. Mori, K. Iida, A. Bando, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  • Journal Title: J. Crystal Growth 310 Pages: 2326-2329
  • Peer Reviewed
• [Journal Article] Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates (2008)
  • Author(s): M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki and A. Bandoh
  • Journal Title: J. Crystal Growth 310 Pages: 2308-2313
  • Peer Reviewed
• [Journal Article] Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy (2007)
  • Author(s): M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh
  • Journal Title: Jpn. J. Appl. Phys. 46 Pages: 1458-1462
  • NAID: 10018900504
  • Peer Reviewed
• [Journal Article] High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate (2007)
  • Author(s): K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, T. Kawashima, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
  • Journal Title: Phys. Stat. Sol. (a) 204 Pages: 1848-1852
  • Peer Reviewed
• [Journal Article] Annihiation mechanism of threading dislocations in AIN grown by growth form modification method using V/III ratio (2007)
  • Author(s): M. Imura, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bando
  • Journal Title: Journal of Crystal Growth 400 Pages: 136-140
  • Peer Reviewed
• [Journal Article] Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE (2007)
  • Author(s): N. Okada, N. Kato, S. Sato, T. Sumii, N. Fujimoto, M. Imura, K. Balak rishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Takagi, T. Noro and A. Bandoh
  • Journal Title: Journal of Crystal Growth 400 Pages: 141-144
  • Peer Reviewed
• [Journal Article] Influence of High Temperature in the Growth of Low Dislocation Content AIN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy (2007)
  • Author(s): K. Balakrishnan, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  • Journal Title: Japanese Journal of Applied Physics 46
  • Peer Reviewed
• [Journal Article] Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy (2007)
  • Author(s): M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: 1458-1462
  • NAID: 10018900504
  • Peer Reviewed
• [Journal Article] Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy (2007)
  • Author(s): N. Okada, M. Imura, T. Nagai, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Noro, T. Takagi, A. Bandoh
  • Journal Title: physica status solidi(c) 4 Pages: 2528-2531
  • Peer Reviewed
• [Journal Article] Mg-doped high-quality Al_xGa_<1-x>N(x=0-1)grown by high-temperature metal-organic vapor phase epitaxy (2007)
  • Author(s): M. Imura, N. Kato, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
  • Journal Title: physica status solidi(c) 4 Pages: 2502-2505
  • Peer Reviewed
• [Journal Article] Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE (2007)
  • Author(s): K. Balakrishnan, K. Iida, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
  • Journal Title: physica status solidi(c) 4 Pages: 2272-2276
  • Peer Reviewed
• [Journal Article] High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate (2007)
  • Author(s): K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, T. Kawashima, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
  • Journal Title: physica status solidi(a) 204 Pages: 1848-1852
  • Peer Reviewed
• [Journal Article] Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells (2007)
  • Author(s): Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells
  • Journal Title: physica status solidi(b) 244 Pages: 1727-1734
  • Peer Reviewed
• [Journal Article] Optical properties of GaN/AlGaN QW nanostructures with different well and barrier widths (2007)
  • Author(s): M Esmaeili, M Sabooni, H Haratizadeh, P P Paskov, B Monemar, P O Holz, S Kamiyama and M Iwaya
  • Journal Title: J. Phys.: Condens. Matter 19 Pages: 356218-356218
  • Peer Reviewed
• [Journal Article] Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification (2007)
  • Author(s): N.Okada, N.Kato, S.Sato, T.Sumii, T.Nagai, N.Fujimoto, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, H.Maruyama, T.Takagi, T.Noro, A.Bandoh
  • Journal Title: Journal of Crystal Growth 298 Pages: 349-353
• [Journal Article] Microstructure in nonpolar m-plane GaN and AlGaN films (2007)
  • Author(s): T.Nagai, T.Kawashima, M.Imura, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Journal of Crystal Growth 298 Pages: 288-292
• [Journal Article] Epitaxial lateral growth of m-plane GaN and Al_<0.18>Ga_<0.82>N on m-plane 4H-SiC and 6H-SiC substrates (2007)
  • Author(s): T.Kawashima, T.Nagai, D.Iida, A.Miura, Y.Okadome, Y.Tsuchiya, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Journal of Crystal Growth 298 Pages: 261-264
• [Journal Article] Epitaxial lateral overgrowth of Al_xGa_<1-x>N (x>0.2) on sapphire and its application to UV-B-light-emitting devices (2007)
  • Author(s): K.Iida, T.Kawashima, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, A.Bandoh
  • Journal Title: Journal of Crystal Growth 298 Pages: 265-267
• [Journal Article] High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE (2007)
  • Author(s): N.Kato, S.Sato, T.Sumii, N.Fujimoto, N.Okada, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, H.Maruyama, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Journal of Crystal Growth 298 Pages: 215-218
• [Journal Article] Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers (2007)
  • Author(s): M.Imura, K.Nakano, G.Narita, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Journal of Crystal Growth 298 Pages: 257-260
• [Journal Article] Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures : influence of Al composition and Si doping (2007)
  • Author(s): M.Esmaeili, H.Haratizadeh, B.Monemar, P.P.Paskov, P.O.Holtz, P.Bergman, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Nanotechnology 18 Pages: 25401-25401
• [Journal Article] Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio (2007)
  • Author(s): M.Imura, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Journal of Crystal Growth 300 Pages: 136-140
• [Journal Article] Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE (2007)
  • Author(s): N.Okada, N.Kato, S.Sato, T.Sumii, N.Fujimoto, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Takagi, T.Noro, A.Bandoh
  • Journal Title: Journal of Crystal Growth 300 Pages: 141-144
• [Journal Article] High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer (2006)
  • Author(s): Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al.
  • Journal Title: Physics Status Solidi A 206 Pages: 1199-1204
  • Peer Reviewed
• [Journal Article] A hydrogen-related shallow donor in GaN? (2006)
  • Author(s): B.Monemar, P.P.Paskov, J.P.Bergman, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Physica B : Condensed Matter 376-377 Pages: 460-463
• [Journal Article] Dominant shallow acceptor enhanced by oxygen doping in GaN (2006)
  • Author(s): B.Monemar, P.P.Paskov, F.Tuomisto, K.Saarinen, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, S.Kimura
  • Journal Title: Physica B : Condensed Matter 376-377 Pages: 440-443
• [Journal Article] Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate (2006)
  • Author(s): M.Imura, A.Honshio, Y.Miyake, K.Nakano, N.Tsuchiya, M.Tsuda, Y.Okadome, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Physica B : Condensed Matter 376-377 Pages: 491-495
• [Journal Article] Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire (2006)
  • Author(s): M.Tsuda, H.Furukawa, A.Honshio, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Japanese Journal of Applied Physics 45 Pages: 2509-2513
  • NAID: 40007227459
• [Journal Article] Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy (2006)
  • Author(s): N.Okada, N.Fujimoto, T.Kitano, G.Narita, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Japanese Journal of Applied Physics 45 Pages: 2502-2504
  • NAID: 40007227457
• [Journal Article] Optical signatures of dopants in GaN (2006)
  • Author(s): B.Monemar, P.P.Paskov, J.P.Bergman, A.A.Toropov, T.V.Shubina, S.Figge, T.Paskova, D.Hommel, A.Usui, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Materials Science in Semiconductor Processing 9 Pages: 168-174
• [Journal Article] Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006)
  • Author(s): S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.DenBaars, J.S.Speck, U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, T.Sota
  • Journal Title: Nature Materials 5 Pages: 810-816
• [Journal Article] Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells (2006)
  • Author(s): B.Arnaudov, P.P.Paskov, H.Haratizadeh, P.O.Holtz, B.Monemar, S.Kamiyama, M.Iwaya, H.Amano, I.Akasaki
  • Journal Title: Physica Status Solidi (c) 3 Pages: 523-1526
• [Journal Article] Growth of high-quality AlN at high growth rate by high-temperature MOVPE (2006)
  • Author(s): N.Fujimoto, T.Kitano, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Physica Status Solidi (c) 3 Pages: 1617-1619
• [Journal Article] Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates (2006)
  • Author(s): K.Balakrishnan, N.Fujimoto, T.Kitano, A.Bandoh, M.Imura, K.Nakano, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Takagi, T.Noro, K.Shimono, T.Riemann, J.Christen
  • Journal Title: Physica Status Solidi (c) 3 Pages: 1392-1395
• [Journal Article] X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN (2006)
  • Author(s): M.Tsuda, H.Furukawa, A.Honshio, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Physica Status Solidi (b) 243 Pages: 1524-1528
• [Journal Article] Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates (2006)
  • Author(s): K.Nakano, M.Imura, G.Narita, T.Kitano, Y.Hirose, N.Fujimoto, N.Okada, T.Kawashima, K.Iida, K.Balakrishnan, M.Tsuda, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Physica Status Solidi (a) 203 Pages: 1632-1635
• [Journal Article] Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells (2006)
  • Author(s): H.Haratizadeh, B.Monemar, H.Amano
  • Journal Title: Physica Status Solidi (a) 203 Pages: 149-153
• [Journal Article] Microstructure of thick AlN grown on sapphire by high-temperature MOVPE (2006)
  • Author(s): M.Imura, K.Nakano, T.Kitano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Physica Status Solidi (a) 203 Pages: 1626-1631
• [Journal Article] High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio (2006)
  • Author(s): M.Imura, K.Nakano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Japanese Journal of Applied Physics 45 Pages: 8639-8643
• [Journal Article] Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy (2006)
  • Author(s): M.Imura, K.Nakano, T.Kitano, N.Fujimoto, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Applied Physics Letters 89 Pages: 21901-21901
• [Journal Article] Breakthroughs in Improving Crystal Quality of GaN and Invention of the p-n Junction Blue-Light-Emitting Diode (2006)
  • Author(s): I.Akasaki, H.Amano
  • Journal Title: Japanese Journal of Applied Physics 45 Pages: 9001-9010
  • NAID: 40015182096
• [Presentation] 紫外発光素子用反射電極の検討 (2011)
  • Author(s): 竹原孝祐、竹田健一郎、永田賢吾、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: (予稿集)
  • Year and Date: 2011-03-09
• [Presentation] AlGaN UV-LEDの光取り出し効率の改善 (2011)
  • Author(s): 稲津哲彦、深堀真也、シリルペルノ、金明姫、藤田武彦、長澤陽祐、平野光、一本松正道、岩谷素顕、天野浩、竹内哲也、上山智、赤崎勇
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: (予稿集)
  • Year and Date: 2011-03-09
• [Presentation] レーザリフトオフ法による薄膜紫外LED (2011)
  • Author(s): 青島宏樹、竹田健一郎、永田賢吾、竹原孝祐、伊藤駿、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: (予稿集)
  • Year and Date: 2011-03-09
• [Presentation] 350nm帯紫外LED及びLD構造の注入効率向上 (2011)
  • Author(s): 竹田健一郎、永田賢吾、竹原孝祐、青島宏樹、野中健太朗、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: (予稿集)
  • Year and Date: 2011-03-09
• [Presentation] AlGaN量子井戸構造の光学的特性 (2011)
  • Author(s): 山本準一、伴和仁、竹田健一郎、井手公康、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: (予稿集)
  • Year and Date: 2011-03-09
• [Presentation] β-Ga_2O_3(100)基板上GaN及びAlGaNの成長 (2011)
  • Author(s): 伊藤駿、竹田健一郎、永田賢吾、青島宏樹、竹原孝祐、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: (予稿集)
  • Year and Date: 2011-03-09
• [Presentation] 高組成AlGaN量子井戸構造の光学的特性 (2010)
  • Author(s): 伴和仁、竹田健一郎、山本準一、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
  • Organizer: 応用物理学会結晶工学分科会主催2010年・年末講演会
  • Place of Presentation: 学習院創立百周年記念会館
  • Year and Date: 2010-12-17
• [Presentation] Atomic Layer Epitaxy of AlN and AlGaN and Raised Pressure MOVPE for the Growth of High In-content GaInN (2010)
  • Author(s): H.Amano, M.Yamaguchi, Y.Honda, M.Iwaya, S.Kamiyama, I.Akasaki
  • Organizer: The 16th International Conference on Crystal Growth(ICCG-16) 招待講演
  • Place of Presentation: Beijing, China.
• [Presentation] Strain relaxation of AlGaN grown on AlN templates by misfit dislocation generation (2010)
  • Author(s): Z.H.Wu, K.Nonaka, Y.Kawai, T.Asai, F.A.Ponce, C.Q.Chen, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Organizer: The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
  • Place of Presentation: Beijing, China
• [Presentation] Optical waveguide layers in UV laser diodes on the low dislocation density AlGaN underlying layer (2010)
  • Author(s): Kenichiro Takeda, Tomoki Ichikawa, Kengo Nagata, Daisuke Sawato, Yuji Ogiso, Yoshinori Oshimura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan
  • Organizer: The 37th International Conference of Compound Semiconductors
  • Place of Presentation: Takamatsu, Japan
• [Presentation] Microstructure of Thick AlGaN Epilayers Using Mg-doped AlN Underlying Layer (2010)
  • Author(s): K.Nonaka, T.Asai, K.Ban, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, Z.H.Wu
  • Organizer: The 3rd International Symposium on Growth of III-Nitrides
  • Place of Presentation: Montpellier, France
• [Presentation] Reduction in threshold current density of UV laser diode (2010)
  • Author(s): Kengo Nagata, Kentaro Nonaka, Tomoki Ichikawa, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan
  • Organizer: The 3rd International Symposium on Growth of III-Nitrides
  • Place of Presentation: Montpellier, France
• [Presentation] Atomic Layer Epitaxy of AlN and AlGaN and Raised Pressure MOVPE for the Growth of High In-content GaInN (2010)
  • Author(s): Hiroshi Amano, Masahito Yamaguchi, Yoshio Honda, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
  • Organizer: The 16th International Conference on Crystal Growth(ICCG-16)
  • Place of Presentation: Beijing, China(招待講演)
• [Presentation] Transmission-electron-microscope characterization of AlGaN/GaN heterostructure on miscut GaN substrate grown by Na flux method (2010)
  • Author(s): Tatsuyuki Sakakibara, Yasuhiro Isobe, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Mamoru Imada, Yasuo Kitaoka, Yusuke Mori
  • Organizer: The 16th International Conference on Crystal Growth(ICCG-16)
  • Place of Presentation: Beijing, China
• [Presentation] Transparent Electrode for UV Light-Emitting-Diodes (2010)
  • Author(s): Kosuke Takehara, Kenichiro Takeda, Kengo Nagata, Hisashi Sakurai, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
  • Organizer: International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
• [Presentation] Injection Efficiency in AlGaN-based UV Laser Diode (2010)
  • Author(s): Kengo Nagata, Kenichiro Takeda, Yoshinori Oshimura, Kosuke Takehara, Hiroki Aoshima, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan
  • Organizer: International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
• [Presentation] Development of High Efficiency 255-350 nm AlGaN-Based Light-Emitting Diodes (2010)
  • Author(s): Cyril Pernot, Myunghee Kim, Shinya Fukahori, Tetsuhiko Inazu, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
  • Organizer: International Workshop on Nitride semiconductors (IWN 2010)
  • Place of Presentation: Tampa, Florida USA
• [Presentation] MgドープAlN下地層を用いた高品質厚膜AlGaNの微細構造観察 (2010)
  • Author(s): 野中健太朗、浅井俊晶、伴和仁、岩谷素顕、上山智、天野浩、赤崎勇、Zhihao Wu
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学
• [Presentation] UVレーザダイオードの閾値電流密度の低減 (2010)
  • Author(s): 永田賢吾、野中健太朗、市川友紀、竹田健一郎、岩谷素顕、上山智、天野浩、赤崎勇、吉田治正、桑原正和、山下陽滋、菅博文
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学
• [Presentation] 酸化ジルコニウムを用いたサファイア基板上LEDの作製 (2010)
  • Author(s): 田村健太, 飯田大輔, 山口修司, 近藤俊行, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇, 天野浩
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
• [Presentation] 紫外発光素子用透明電極の検討 (2010)
  • Author(s): 深堀真也, シリルペルノ, 金明姫, 藤田武彦, 稲津哲彦, 長澤陽祐, 平野光, 一本松正道, 岩谷素顕, 上山智, 赤崎勇, 天野浩
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
• [Presentation] ELO AlGaN下地層上に作製した紫外レーザダイオードの特性評価 (2010)
  • Author(s): 竹田健一郎, 永田賢吾, 竹原孝祐, 青島宏樹, 伊藤駿, 押村吉徳, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤崎勇, 吉田治正, 桑原正和, 山下陽滋, 菅博文
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
• [Presentation] 昇華法による単結晶AlNの高速成長 (2010)
  • Author(s): 山川雅康, 村田一喜, 岩谷素顕, 上山智, 竹内哲也, 赤崎勇, 天野浩, 東正信
  • Organizer: 窒化物ナノ・エレクトロニクス材料研究センター講演会
  • Place of Presentation: 東北大学
• [Presentation] MgドープAlN下地層を用いた低転位AlGaNの転位挙動 (2010)
  • Author(s): 野中健太朗, 浅井俊晶, 伴和仁, 山本準一, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇, 天野浩, Z.H.Wu
  • Organizer: 窒化物ナノ・エレクトロニクス材料研究センター講演会
  • Place of Presentation: 東北大学
• [Presentation] 窒化物半導体応用の波長範囲の拡大, -赤外から紫外まで- (2009)
  • Author(s): 天野浩
  • Organizer: 赤崎先生京都賞受賞記念ワークショップ
  • Place of Presentation: 京都国際会館
  • Year and Date: 2009-11-12
• [Presentation] Past, present and future prospects of group III nitride based light emitting devices (2009)
  • Author(s): 天野浩
  • Organizer: 2nd International Conference on Microelectronics and Plasma Technology(ICMAP 2009)
  • Place of Presentation: BEXCO Convention Center, Busan, Korea
  • Year and Date: 2009-09-25
• [Presentation] 9-a-X-2高品質GaN基板への期待 (2009)
  • Author(s): 天野浩
  • Organizer: 日本学術振興会第161委員会企画「GaN基板ウエハ実現の鍵を握る結晶育成・加工技術～その現状と課題、及び将来展望～」
  • Place of Presentation: 黒田講堂ホール、富山
  • Year and Date: 2009-09-09
• [Presentation] Revolutions in Solid State Lighting Technology (2009)
  • Author(s): 天野浩
  • Organizer: International Workshop on EEWS
  • Place of Presentation: Daejeon Convention Center, Korea
  • Year and Date: 2009-09-02
• [Presentation] Growth and Conductivity Control of High-Quality GaInN for the Realization of High Efficiency Photovoltaic Devices (2009)
  • Author(s): H.Amano, Y.Kuwahara, Y.Fujiyama, Y.Morita, D.Iida, M.Iwaya, S.Kamiyama, I.Akasaki
  • Organizer: POEM2009
  • Place of Presentation: Wuhan, China
  • Year and Date: 2009-08-09
• [Presentation] 世界を変えるGaN発光デバイス～低炭素社会実現の救世主となるために～ (2009)
  • Author(s): 天野浩, 7月24日(金)
  • Organizer: 【大阪大学光科学センター】光科学フォーラムサミット
  • Place of Presentation: 千里阪急ホテルクリスタルホール
  • Year and Date: 2009-07-24
• [Presentation] Growth and conductivity control of high quality AlGaN and its application to high performance ultraviolet laser diodes (2009)
  • Author(s): H.Amano, S.A.Inada, K.Nagamatsu, K.Takeda, T.Asai, K.Nagata, K.Nonaka, T.Mori, H.Tsuzuki, M.Iwaya, S.Kamiyama, I.Akasaki
  • Organizer: SIMC-XV 招待講演
  • Place of Presentation: Vilnius, Lithuania.
  • Year and Date: 2009-06-16
• [Presentation] Growth and conductivity control of high quality AlGaN and its application to high performance ultraviolet laser diodes (2009)
  • Author(s): H.Amano, S.A.Inada, K.Nagamatsu, K.Takeda, T.Asai, K.Nagata, K.Nonaka, T.Mori, H.Tsuzuki, M.Iwaya, S.Kamiyama, I.Akasaki
  • Organizer: SIMC-XV
  • Place of Presentation: Vilnius, Lithuania
  • Year and Date: 2009-06-16
• [Presentation] 持続可能な社会システム構築のための窒化物半導体の役割 (2009)
  • Author(s): 天野浩
  • Organizer: 第1回窒化物半導体結晶成長講演会
  • Place of Presentation: 東京農工大小金井キャンパス1号館1階ホール
  • Year and Date: 2009-05-15
• [Presentation] p-AlGaNの活性化アニール特性 (2009)
  • Author(s): 永田賢吾, 竹田健一郎, 市川友紀, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
  • Organizer: 日本結晶成長学会ナノエピ分科会 第1回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の未来を展望する」
  • Place of Presentation: 東京農工大小金井キャンパス1号館1階ホール
  • Year and Date: 2009-05-15
• [Presentation] AlGaN中のMgの活性化エネルギー(II) (2009)
  • Author(s): 永松謙太郎, 浅井俊晶, 竹田健一郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
  • Organizer: 春季 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] Challenge for short wavelength semiconductor UV laser diodes (2009)
  • Author(s): H.Amano, H.Tsuzuki, T.Mori, K.Takeda, K.Nagamatsu, M.Iwaya, S.Kamiyama, I.Akasaki
  • Organizer: Proceedings of SPIE Volume 7216
  • Place of Presentation: San Jose Convention Center, USA
  • Year and Date: 2009-01-28
• [Presentation] 活性化アニールによるp型Al_<0.17>Ga_<0.83>Nの正孔濃度と接触比抵抗の評価 (2009)
  • Author(s): 永田賢吾, 竹田健一郎, 永松謙太郎, 都築宏俊, 岩谷素顕, 上山智, 天野浩, 赤崎勇
  • Organizer: 応用物理学会第56回応用物理学関連連合講演会
  • Place of Presentation: 筑波大学
• [Presentation] 酸素雰囲気中でのp型AlGaNの活性化による高出力AlGaN/GaN紫外LED (2009)
  • Author(s): 永田賢吾, 竹田健一郎, 市川友紀, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
  • Organizer: 応用物理学会第70回応用物理学関連連合講演会
  • Place of Presentation: 富山大学
• [Presentation] High Output Power AlGaN/GaN Ultraviolet Light Emitting Diodes by Activation of Mg-Doped P-Type AlGaN in Oxygen Ambient (2009)
  • Author(s): Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
  • Organizer: ICNS 8
  • Place of Presentation: 済州島、韓国
• [Presentation] Mg-doped AIN下地層を用いた低転位AlGaNの微細構造観察 (2009)
  • Author(s): 野中健太朗, 浅井俊晶, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学
• [Presentation] Defects in Highly Mg-Doped AlN (2009)
  • Author(s): K.Nonaka, T.Asai, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Organizer: The 8th International Conference on Nitride Semiconductors
  • Place of Presentation: 済州島、韓国
• [Presentation] 非極性a面p-GaNのMg濃度の最適化 (2009)
  • Author(s): 田村健太、飯田大輔、岩谷素顕、上山智、天野浩、赤崎勇
  • Organizer: 第70回応用物理学関係連合講演会
  • Place of Presentation: 富山大学
• [Presentation] Growth of Low-Dislocation-Density AlGaN using Mg-Doped AlN Underlying Layer (2009)
  • Author(s): T.Asai, K.Nonaka, K.Ban, K.Nagata, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Organizer: 8th International Conference on Nitride Semiconductors(ICNS-8)
  • Place of Presentation: 済州島、韓国
• [Presentation] Mg-doped AIN下地層を用いたAlGaN成長 (2009)
  • Author(s): 浅井俊晶, 野中健太郎, 伴和仁, 永田賢昌, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇, SAT-2, pp.85, (2009-5)
  • Organizer: 日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
  • Place of Presentation: 東京農工大小金井キャンパス1号館1階ホール
• [Presentation] Mg-doped AIN下地層によるAlGaNの低転位化の機構 (2009)
  • Author(s): 浅井俊晶, 野中健太朗, 伴和仁, 永田賢昌, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学
• [Presentation] 斜めファセット面を用いたAlGaNの全面低転位化 (2009)
  • Author(s): 竹田健一郎, 森史明, 岩谷素顕, 上山智, 天野浩, 赤崎勇, 日本結晶成長学会ナノエピ分科会予稿集, SAT-18, (2009-5)
  • Organizer: 第1回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の未来を展望する」
  • Place of Presentation: 東京農工大小金井キャンパス1号館1階ホール
• [Presentation] Internal Quantum Efficiency of GaN/AlGaN Multi Quantum Wells on Different Dislocation Density Underlying Layer (2009)
  • Author(s): Kenichiro Takeda, Fumiaki Mori, Yuji Ogiso, Tomoki Ichikawa, Kentaro Nonaka, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
  • Organizer: ICNS 8
  • Place of Presentation: 済州島、韓国
• [Presentation] High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer (2008)
  • Author(s): H. Tsuzuki, F. Mori, K. Takeda, M. Twaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, H. Kan
  • Organizer: Abstracts of the International Workshop on Nitride semiconductors
  • Place of Presentation: Montreux, Swiss
  • Year and Date: 2008-10-08
• [Presentation] Activation energy of Mg in AlGaN (2008)
  • Author(s): K. Nagamatsu, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano, I. and Akasaki
  • Organizer: International Workshop on Nitride Semiconductors 2008
  • Place of Presentation: Montreux, Swiss
  • Year and Date: 2008-10-08
• [Presentation] Microstructure in Al_xGai_<1-x>N grown on AlN (2008)
  • Author(s): Toshiaki Mori, Toshiaki Asai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki
  • Organizer: International Workshop on Nitride semiconductors
  • Place of Presentation: Montreux, Swiss
  • Year and Date: 2008-10-08
• [Presentation] ELOを用いた高温MOVPE成長AlN/Sapphire基板上のUV-LD特性評価 (2008)
  • Author(s): 都築宏俊, 森史明, 市川友紀, 竹田健一郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇, 吉田治正, 桑原正和, 山下陽滋, 菅博文
  • Organizer: 第69回応用物理学会学術講演会講演予稿集
  • Place of Presentation: 中部大
  • Year and Date: 2008-09-05
• [Presentation] 周期溝下地結晶を用いたAl_<0.5>Ga_<0.5>Nの低転位化 (2008)
  • Author(s): 竹田健一郎, 森史明, 小木曽裕二, 森俊晶, 浅井俊晶, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-02
• [Presentation] 高正孔濃度p型AlGaN (2008)
  • Author(s): 永松謙太郎, 竹田健一郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
  • Organizer: 特定領域研究「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」公開シンポジウム
  • Place of Presentation: 東京
  • Year and Date: 2008-08-02
• [Presentation] AlN上AlGaNの結晶回復過程と溝加工テンプレートによる低転位化 (2008)
  • Author(s): 竹田健一郎, 浅井俊晶, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
  • Organizer: 文部科学省科学研究費補助金特定領域研究公開シンポジウム「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」
  • Place of Presentation: 東京
  • Year and Date: 2008-08-02
• [Presentation] High efficiency UV LEDs and LDs (2008)
  • Author(s): H. Amano
  • Organizer: 5^<th> China International Forum on Solid State Lighting
  • Place of Presentation: Shenzhen, China
  • Year and Date: 2008-07-26
• [Presentation] Novel UV devices on high quality AlGaN using grooved template (2008)
  • Author(s): H. Tsuzuki, F. Mori, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, H. Kan
  • Organizer: Abstracts of the Second International Symposium on Growth of III-Nitrides
  • Place of Presentation: 伊豆
  • Year and Date: 2008-07-07
• [Presentation] Relaxation process of Al_xGa_<1-x>N grown on high-crystalline-quality A1N (2008)
  • Author(s): T. Asai, K. Nagata, T. Mori, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  • Organizer: Technical Digest ISGN-2
  • Place of Presentation: 伊豆
  • Year and Date: 2008-07-07
• [Presentation] Short wavelength semiconductor laser diodes (2008)
  • Author(s): H. Amano, H. Tsuzuki, K. Takeda, K. Nagamatsu, M. Iwaya, S. Kamiyama, I. Akasaki
  • Organizer: Japan- Brazil Memorial Symposium on Science and Technology for the Celebration of 100 Years of Japanese Immigration in Brazil
  • Place of Presentation: Universidade de Sao Paulo, Brazil
  • Year and Date: 2008-06-25
• [Presentation] Growth of Group III Nitrides For UV and Green Light Emitting Devices (2008)
  • Author(s): H. Amano
  • Organizer: The 4^<th> Asian Conference on Crystal Growth and Crystal Technology, Sendai, Japan
  • Place of Presentation: 仙台
  • Year and Date: 2008-05-22
• [Presentation] Growth of Group III Nitrides For UV and Green Light Emitting Devices (2008)
  • Author(s): H. Amano
  • Organizer: The 4th Asian Conference on Crystal Growth and Crystal Technology
  • Place of Presentation: Sendai, Japan
• [Presentation] 高温MOVPEを用いたAlN周期溝上AlGaN中の転位密度のAlNモル分率依存性 (2008)
  • Author(s): 浅井俊晶、住井隆文、加藤尚文、佐藤周夜、森 俊晶、岩谷素顕、上山 智、天野 浩、赤崎 勇
  • Organizer: 2008年春季 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学(船橋校舎)
• [Presentation] AlGaN中のMgの活性化エネルギー (2008)
  • Author(s): 永松謙太郎、岡田成仁、井村将隆、岩谷素顕、上山 智、天野 浩、赤崎 勇
  • Organizer: 2008年春季 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学(船橋校舎)
• [Presentation] ELOを用いた高温MOVPE成長AlN/サファイア基板上の高効率UV LED (2008)
  • Author(s): 都築宏俊、森 史明、市川友紀、竹田健一郎、渡邊浩崇、飯田一喜、岩谷素顕、上山 智、天野 浩、赤崎 勇、坂東 章
  • Organizer: 2008年春季 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学(船橋校舎)
• [Presentation] High temperature metalorganic vapor phase epitaxial growth of AlN and AlGaN for fabrication of high performance UV/DUV emitters (2007)
  • Author(s): K. Balakrishnan, Kazuyoshi Iida, H. Watanabe, H. Amano, M. Iwaya, I. Akasaki
  • Organizer: 17th International Vacuum Congress(IVC-17),
  • Place of Presentation: Stockholm, Sweden
• [Presentation] Epitaxial lateral overgrowth of low dislocation density AlN by high temperature MOVPE and fabrication of UV optoelectronics devices (2007)
  • Author(s): K. Nagamatsu, N. Okada, F. Mori, K. Iida, M. Imura, K. Balakrishnan, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
  • Organizer: The 13th Conference on Vapor Growth and Epitaxy
  • Place of Presentation: Salt Lake City, Utah, USA
• [Presentation] High temperature MOVPE growth-a novel approach to grow high quality AlN layers (2007)
  • Author(s): B. Krishnan, M. Imura, S. Satoh, H. Sugimura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
  • Organizer: The 13th Conference on Vapor Growth and Epitaxy
  • Place of Presentation: Salt Lake City, Utah, USA
• [Presentation] Microstructure of AlN grown on SiC by high-temperature metalorganic vapor phase epitaxy and epitaxial lateral overgrowth (2007)
  • Author(s): M. Imura, N. Okada, B. Krishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
  • Organizer: The 13th Conference on Vapor Growth and Epitaxy
  • Place of Presentation: Salt Lake City, Utah, USA
• [Presentation] 紫外発光素子への期待とIII族窒化物半導体を用いた紫外発光素子の高性能化 (2007)
  • Author(s): 天野 浩, 岩谷素顕, 上山 智, 赤崎 勇
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学
• [Presentation] Microstructure of Threading Dislocations Caused by Grain Boundaries in AlN on Sapphire Substrate (2007)
  • Author(s): M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
  • Organizer: The 7th International Conference of Nitride Semi conductors
  • Place of Presentation: Las Vegas, Nevada, USA
• [Presentation] Extremely Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by High Temperature MOVPE (2007)
  • Author(s): B. Krishnan, H. Sugimura, A. Band oh, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
  • Organizer: The 7th International Conference of Nitride Semi conductors
  • Place of Presentation: Las Vegas, Nevada, USA
• [Presentation] Critical Issue in Growing High Quality Thick AlGaN by High-Temperature MOVPE (2007)
  • Author(s): N. Kato, T. Sumii, S. Sato, H. Sugimura, N. Okada, M. Imura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. B andoh
  • Organizer: The 7th International Conference of Nitride Semiconductors
  • Place of Presentation: Las Vegas, Nevada, USA
• [Presentation] Internal Quantum Efficiency of Al_xGa_<1-x>N (0<x<1) on AlN Template (2007)
  • Author(s): N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. Bando, H. Murotani, Y. Yamada
  • Organizer: The 7th International Conference of Nitride Semiconductors
  • Place of Presentation: Las Vegas, Nevada, USA
• [Presentation] Stimulated Emission from Nonpolar and Polar AlN (2007)
  • Author(s): N. Okada, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. Bando, H. Murotani, Y. Yamada
  • Organizer: The 7th International Conference of Nitride Semiconductors
  • Place of Presentation: Las Vegas, Nevada, USA
• [Presentation] UV Emitters Grown on High Crystalline Quality AlGaN on Sapphire (2007)
  • Author(s): K. Iida, F. Mori, H. Watanabe, K. Takeda, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama. T. Takagi. A. Bandoh
  • Organizer: The 7th International Conference of Nitride Semiconductors
  • Place of Presentation: Las Vegas, Nevada, USA
• [Presentation] Effect of sapphire mis-orientation on the growth of AlN by high temperature MOVPE (2007)
  • Author(s): K. Nagamatsu, N. Okada, N. Kato, T. Sumii, A. Bando, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
  • Organizer: The 7th International Conference of Nitride Semiconductors
  • Place of Presentation: Las Vegas, Nevada, USA
• [Presentation] Nitride-Based UV Lasers (2007)
  • Author(s): H. Amano, N. Kato, N. Okada, T. K awashima, K. Iida, K. Nagamatsu, M. Imura, K. Balakrishnan, M. Iwaya, S. Kamiyama and I. Akasaki
  • Organizer: The 20th Annual Meeting of the IEEE Lasers & Electro-Optics Society (LEOS 2007)
  • Place of Presentation: Florida, USA
• [Book] Metalorganic vapor phase epitaxial growth of nonpolar Al(Ga, In)N films on lattice-mismatched substrates Wiley-VCH Verlag GmbH & Co.KGaA(Editor : T.Paskova) (2008)
  • Author(s): H.Amano, T.Kawashima, D.Iida, M.Imura, M.Iwaya, S.Kamiyama, I.Akasaki
  • Publisher: Nitrides with Nonpolar Surfaces
• [Book] Nitrides with Nonpolar Surfaces, "Metalorganic vapor phase epitaxial growth of nonpolar Al(Ga,In)N films on lattice-mismatched substrates" (2008)
  • Author(s): H. Amano, T. Kawashima, D. Iida, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
  • Total Pages: 464
  • Publisher: Wiley-VCH Verlag GmbH & Co. KGaA (Editor(s): T.Paskova)
• [Book] Nitrides with Nonpolar Surfaces, Metalorganic vapor phase epitaxial growth of nonpolar A1(Ga, In)N films on lattice-mismatched substrates Editor(s) : T. Paskova, 108-118 (2008)
  • Author(s): H. Amano, T. Kawashima, D. Iida, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
  • Total Pages: 464
  • Publisher: Wiley-VCH Verlag GmbH & Co. KGaA
• [Book] Advances in Light Emitting Materials, Edited by Bo Monemar, Martin Kittler and Hermann Grimmeisss, AlN and AlGaN by MOVPE for UV Light Emitting Devices pp.175-210 (2008)
  • Author(s): H. Amano, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
  • Total Pages: 278
  • Publisher: Trans Technical Publications
• [Book] LED革新のための最新技術と展望, 第2章第2節第1項, GaNの成長・低転位化・実用状況・基板欠陥とGaN膜欠陥の相関, pp.34-52 (2008)
  • Author(s): 天野浩
  • Total Pages: 709
  • Publisher: 情報機構
• [Remarks] ホームページ等
  • URL: http://kenpro.mynu.jp:8001/Profiles/0065/0006561/profile.html
• [Patent(Industrial Property Rights)] 自立基板の製造方法、AlN自立基板及びIII族窒化物半導体デバイス (2011)
  • Inventor(s): 天野浩、岩谷素顕
  • Industrial Property Rights Holder: 名城大学
  • Industrial Property Number: 2011-060889
  • Filing Date: 2011-03-18
• [Patent(Industrial Property Rights)] 窒化アルミニウム単結晶多角柱状体及びその製造方法 (2007)
  • Inventor(s): 天野浩、金近幸博、東正信
  • Industrial Property Rights Holder: (株)トクヤマ
  • Industrial Property Number: 2007-303311
  • Filing Date: 2007-11-22
• [Patent(Industrial Property Rights)] 板状の窒化アルミニウム単結晶の製造方法 (2007)
  • Inventor(s): 天野浩、金近幸博、東正信
  • Industrial Property Rights Holder: (株)トクヤマ
  • Industrial Property Number: 2007-303312
  • Filing Date: 2007-11-22
• [Patent(Industrial Property Rights)] 窒化化合物半導体基板及び半導体デバイス (2006)
  • Inventor(s): 天野浩、吉田冶正、高木康文、桑原正和
  • Industrial Property Rights Holder: 浜松ホトニクス(株)
  • Industrial Property Number: 2006-032950
  • Filing Date: 2006-02-09