Watt class high power ultraviolet laser diode
Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
Project/Area Number |
18069011
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Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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Allocation Type | Single-year Grants |
Review Section |
Science and Engineering
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Research Institution | Meijo University |
Principal Investigator |
AMANO Hiroshi Meijo University, 工学研究科, 教授 (60202694)
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Co-Investigator(Kenkyū-buntansha) |
KAMIYAMA Satoshi 名城大学, 理工学部, 教授 (10340291)
IWAYA Motoaki 名城大学, 理工学部, 准教授 (40367735)
|
Project Period (FY) |
2006 – 2010
|
Project Status |
Completed (Fiscal Year 2010)
|
Budget Amount *help |
¥139,100,000 (Direct Cost: ¥139,100,000)
Fiscal Year 2010: ¥17,400,000 (Direct Cost: ¥17,400,000)
Fiscal Year 2009: ¥17,400,000 (Direct Cost: ¥17,400,000)
Fiscal Year 2008: ¥17,400,000 (Direct Cost: ¥17,400,000)
Fiscal Year 2007: ¥30,400,000 (Direct Cost: ¥30,400,000)
Fiscal Year 2006: ¥56,500,000 (Direct Cost: ¥56,500,000)
|
Keywords | AlN / AlGaN / MOVPE / UV・DUV / LED・LD / 紫外LED / 紫外LD / 内部量子効率 / 低転位 / 紫外半導体レーザ / GaN / 紫外発光ダイオード / デバイスシミュレータ / 発光効率 / 低転位化 / 紫外線レーザ / 窒化アルミニウム / p型 / 結晶欠陥 / 量子効率 / AIN / 昇華法 / AIN基板 / 高温MOVPE / 横方向成長 / 原子ステップ / 転位 / シミュレーション / レーザダイオード |
Research Abstract |
Metalorganic vapor phase epitaxial (MOVPE) system by which AlN and AlGaN can be grown at high temperature was designed and installed. High temperature MOVPE is found to be very effective to grow high-crystalline quality and low residual impurity AlN and AlGaN. By using high temperature MOVPE system, lateral growth technique can be successfully applied to grow low threading dislocation density (TDD) AlN and AlGaN on a sapphire substrate. Multi quantum well (MQW) structures emitting from 230 nm to 345 nm containing different TDD were systematically grown. Internal quantum efficiency (IQE) of these MQW was found to be uniquely dependent on the TDD. UVA laser diode (LD) was fabricated. Injection efficiency and IQE of the UVA LD was characterized. UV/DUV LEDs with external quantum efficiency over 5% were successfully fabricated. High crystalline quality AlN can be grown by close spaced sublimation method with a growth rate as high as 0.6 mm/h.
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Report
(7 results)
Research Products
(158 results)
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[Journal Article] Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer2011
Author(s)
K.Takeda, K.Nagata, T.Ichikawa, K.Nonaka, Y.Ogiso, Y.Oshimura, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano, H.Yoshida, M.Kuwabara, Y.Yamashita, H.Kan
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Journal Title
physica status solidi (c)
Volume: 8
Pages: 464-466
Related Report
Peer Reviewed
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[Journal Article] Improved Efficiency of 255-280 nm AlGaN-Based Light-Emitting Diodes2010
Author(s)
Cyril Pernot, Myunghee Kim, Shinya Fukahori, Tetsuhiko Inazu, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
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Journal Title
Applied Physics Express
Volume: 3
NAID
Related Report
Peer Reviewed
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[Journal Article] Atomic layer epitaxy of AlGaN2010
Author(s)
Kentaro Nagamatsu, Daisuke Iida, Kenichiro Takeda, Kensuke Nagata, Toshiaki Asai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
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Journal Title
physica status solidi (c)
Volume: 7
Pages: 2368-2370
Related Report
Peer Reviewed
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[Journal Article] Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films2009
Author(s)
Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Markov, A.V., Yugova, T.G., Petrova, E.A., Amano, H., Kawashima, T., Scherbatchev, K.D., Bublik, V.T.
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Journal Title
Journal of Applied Physics 105
Related Report
Peer Reviewed
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[Journal Article] Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth2009
Author(s)
Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Markov, A.V., Yakimov, E.B., Vergeles, P.S., Amano, H., Kawashima, T.
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Journal Title
Journal of Crystal Growth 311
Pages: 2923-2925
Related Report
Peer Reviewed
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[Journal Article] Evidence for Two Mg Related Acceptors in GaN2009
Author(s)
Monemar, B., Paskov, P.P., Pozina, G., Hemmingsson, C., Bergman, J.P., Kawashima, T., Amano, H., Akasaki, I., Paskova, T., Figge, S., et al.
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Journal Title
Physical Review Letters 102
Related Report
Peer Reviewed
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[Journal Article] Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures.Impact of built-in polarization fields2009
Author(s)
Esmaeili, M., Gholami, M., Haratizadeh, H., Monemar, B., Holtz, P.O., Kamiyama, S., Amano, H., Akasaki, I.
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Journal Title
Opto-Electronics Review 17
Pages: 293-299
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Peer Reviewed
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[Journal Article] Growth of thick GaInN on grooved(1011)GaN/(1012)4H-SiC2009
Author(s)
Matsubara, Tetsuya, Senda, Ryota, Iids, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
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Journal Title
Journal of Crystal Growth 311
Pages: 2926-2928
Related Report
Peer Reviewed
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[Journal Article] Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN2009
Author(s)
Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.
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Journal Title
Applied Physics Express 2
NAID
Related Report
Peer Reviewed
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[Journal Article] Novel UV devices on high-quality AlGaN using grooved underlying layer2009
Author(s)
Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al.
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Journal Title
Journal of Crystal Growth 311
Pages: 2860-2863
Related Report
Peer Reviewed
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[Journal Article] Relaxation and recovery processes of Al_xGa_<1-x>N grown on AlN underlying layer2009
Author(s)
Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
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Journal Title
Journal of Crystal Growth 311
Pages: 2850-2852
Related Report
Peer Reviewed
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[Journal Article] Strong emission from GaInN/GaN multiple quantum wells on high-crys talline-quality thick m-plane GaInN underlying layer on grooved GaN2009
Author(s)
Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
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Journal Title
Applied Physics Express 2
Related Report
Peer Reviewed
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[Journal Article] Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire2008
Author(s)
K. Iida, H. Watanabe, K. Takeda, F. Mori, H. Tsuzuki, Y. Yamashita, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi and A. Bandoh
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Journal Title
Phys, Stat. Sol. (c) 5
Pages: 2142-2144
Related Report
Peer Reviewed
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[Journal Article] Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy2008
Author(s)
N. Kato, S. Sato, H. Sugimura, T. Sumii, N. Okada, M. Imura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi and A. Bandoh
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Journal Title
Phys, Stat. Sol. (c) 5
Pages: 1559-1561
Related Report
Peer Reviewed
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[Journal Article] Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy2007
Author(s)
M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh
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Journal Title
Jpn. J. Appl. Phys. 46
Pages: 1458-1462
NAID
Related Report
Peer Reviewed
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[Journal Article] High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate2007
Author(s)
K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, T. Kawashima, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
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Journal Title
Phys. Stat. Sol. (a) 204
Pages: 1848-1852
Related Report
Peer Reviewed
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[Journal Article] Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE2007
Author(s)
N. Okada, N. Kato, S. Sato, T. Sumii, N. Fujimoto, M. Imura, K. Balak rishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Takagi, T. Noro and A. Bandoh
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Journal Title
Journal of Crystal Growth 400
Pages: 141-144
Related Report
Peer Reviewed
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[Journal Article] Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy2007
Author(s)
M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh
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Journal Title
Japanese Journal of Applied Physics 46
Pages: 1458-1462
NAID
Related Report
Peer Reviewed
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[Journal Article] Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy2007
Author(s)
N. Okada, M. Imura, T. Nagai, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Noro, T. Takagi, A. Bandoh
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Journal Title
physica status solidi(c) 4
Pages: 2528-2531
Related Report
Peer Reviewed
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[Journal Article] Mg-doped high-quality Al_xGa_<1-x>N(x=0-1)grown by high-temperature metal-organic vapor phase epitaxy2007
Author(s)
M. Imura, N. Kato, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
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Journal Title
physica status solidi(c) 4
Pages: 2502-2505
Related Report
Peer Reviewed
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[Journal Article] High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate2007
Author(s)
K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, T. Kawashima, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
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Journal Title
physica status solidi(a) 204
Pages: 1848-1852
Related Report
Peer Reviewed
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[Journal Article] Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification2007
Author(s)
N.Okada, N.Kato, S.Sato, T.Sumii, T.Nagai, N.Fujimoto, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, H.Maruyama, T.Takagi, T.Noro, A.Bandoh
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Journal Title
Journal of Crystal Growth 298
Pages: 349-353
Related Report
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[Journal Article] High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE2007
Author(s)
N.Kato, S.Sato, T.Sumii, N.Fujimoto, N.Okada, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, H.Maruyama, T.Noro, T.Takagi, A.Bandoh
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Journal Title
Journal of Crystal Growth 298
Pages: 215-218
Related Report
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[Journal Article] Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers2007
Author(s)
M.Imura, K.Nakano, G.Narita, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
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Journal Title
Journal of Crystal Growth 298
Pages: 257-260
Related Report
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[Journal Article] Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio2007
Author(s)
M.Imura, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
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Journal Title
Journal of Crystal Growth 300
Pages: 136-140
Related Report
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[Journal Article] Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE2007
Author(s)
N.Okada, N.Kato, S.Sato, T.Sumii, N.Fujimoto, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Takagi, T.Noro, A.Bandoh
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Journal Title
Journal of Crystal Growth 300
Pages: 141-144
Related Report
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[Journal Article] High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer2006
Author(s)
Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al.
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Journal Title
Physics Status Solidi A 206
Pages: 1199-1204
Related Report
Peer Reviewed
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[Journal Article] Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate2006
Author(s)
M.Imura, A.Honshio, Y.Miyake, K.Nakano, N.Tsuchiya, M.Tsuda, Y.Okadome, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
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Journal Title
Physica B : Condensed Matter 376-377
Pages: 491-495
Related Report
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[Journal Article] Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy2006
Author(s)
N.Okada, N.Fujimoto, T.Kitano, G.Narita, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
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Journal Title
Japanese Journal of Applied Physics 45
Pages: 2502-2504
NAID
Related Report
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[Journal Article] Optical signatures of dopants in GaN2006
Author(s)
B.Monemar, P.P.Paskov, J.P.Bergman, A.A.Toropov, T.V.Shubina, S.Figge, T.Paskova, D.Hommel, A.Usui, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
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Journal Title
Materials Science in Semiconductor Processing 9
Pages: 168-174
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[Journal Article] Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors2006
Author(s)
S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.DenBaars, J.S.Speck, U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, T.Sota
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Journal Title
Nature Materials 5
Pages: 810-816
Related Report
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[Journal Article] Growth of high-quality AlN at high growth rate by high-temperature MOVPE2006
Author(s)
N.Fujimoto, T.Kitano, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
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Journal Title
Physica Status Solidi (c) 3
Pages: 1617-1619
Related Report
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[Journal Article] Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates2006
Author(s)
K.Balakrishnan, N.Fujimoto, T.Kitano, A.Bandoh, M.Imura, K.Nakano, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Takagi, T.Noro, K.Shimono, T.Riemann, J.Christen
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Journal Title
Physica Status Solidi (c) 3
Pages: 1392-1395
Related Report
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[Journal Article] Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates2006
Author(s)
K.Nakano, M.Imura, G.Narita, T.Kitano, Y.Hirose, N.Fujimoto, N.Okada, T.Kawashima, K.Iida, K.Balakrishnan, M.Tsuda, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
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Journal Title
Physica Status Solidi (a) 203
Pages: 1632-1635
Related Report
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[Journal Article] Microstructure of thick AlN grown on sapphire by high-temperature MOVPE2006
Author(s)
M.Imura, K.Nakano, T.Kitano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
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Journal Title
Physica Status Solidi (a) 203
Pages: 1626-1631
Related Report
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[Journal Article] High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio2006
Author(s)
M.Imura, K.Nakano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
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Journal Title
Japanese Journal of Applied Physics 45
Pages: 8639-8643
Related Report
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[Journal Article] Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy2006
Author(s)
M.Imura, K.Nakano, T.Kitano, N.Fujimoto, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
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Journal Title
Applied Physics Letters 89
Pages: 21901-21901
Related Report
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[Presentation] Strain relaxation of AlGaN grown on AlN templates by misfit dislocation generation2010
Author(s)
Z.H.Wu, K.Nonaka, Y.Kawai, T.Asai, F.A.Ponce, C.Q.Chen, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
Organizer
The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
Place of Presentation
Beijing, China
Related Report
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[Presentation] Optical waveguide layers in UV laser diodes on the low dislocation density AlGaN underlying layer2010
Author(s)
Kenichiro Takeda, Tomoki Ichikawa, Kengo Nagata, Daisuke Sawato, Yuji Ogiso, Yoshinori Oshimura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan
Organizer
The 37th International Conference of Compound Semiconductors
Place of Presentation
Takamatsu, Japan
Related Report
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[Presentation] Reduction in threshold current density of UV laser diode2010
Author(s)
Kengo Nagata, Kentaro Nonaka, Tomoki Ichikawa, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan
Organizer
The 3rd International Symposium on Growth of III-Nitrides
Place of Presentation
Montpellier, France
Related Report
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[Presentation] Transmission-electron-microscope characterization of AlGaN/GaN heterostructure on miscut GaN substrate grown by Na flux method2010
Author(s)
Tatsuyuki Sakakibara, Yasuhiro Isobe, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Mamoru Imada, Yasuo Kitaoka, Yusuke Mori
Organizer
The 16th International Conference on Crystal Growth(ICCG-16)
Place of Presentation
Beijing, China
Related Report
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[Presentation] Transparent Electrode for UV Light-Emitting-Diodes2010
Author(s)
Kosuke Takehara, Kenichiro Takeda, Kengo Nagata, Hisashi Sakurai, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
Organizer
International Workshop on Nitride semiconductors (IWN2010)
Place of Presentation
Tampa, Florida USA
Related Report
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[Presentation] Injection Efficiency in AlGaN-based UV Laser Diode2010
Author(s)
Kengo Nagata, Kenichiro Takeda, Yoshinori Oshimura, Kosuke Takehara, Hiroki Aoshima, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan
Organizer
International Workshop on Nitride semiconductors (IWN2010)
Place of Presentation
Tampa, Florida USA
Related Report
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[Presentation] Development of High Efficiency 255-350 nm AlGaN-Based Light-Emitting Diodes2010
Author(s)
Cyril Pernot, Myunghee Kim, Shinya Fukahori, Tetsuhiko Inazu, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
Organizer
International Workshop on Nitride semiconductors (IWN 2010)
Place of Presentation
Tampa, Florida USA
Related Report
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[Presentation] 紫外発光素子用透明電極の検討2010
Author(s)
深堀真也, シリルペルノ, 金明姫, 藤田武彦, 稲津哲彦, 長澤陽祐, 平野光, 一本松正道, 岩谷素顕, 上山智, 赤崎勇, 天野浩
Organizer
第71回応用物理学会学術講演会
Place of Presentation
長崎大学
Related Report
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[Presentation] ELO AlGaN下地層上に作製した紫外レーザダイオードの特性評価2010
Author(s)
竹田健一郎, 永田賢吾, 竹原孝祐, 青島宏樹, 伊藤駿, 押村吉徳, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤崎勇, 吉田治正, 桑原正和, 山下陽滋, 菅博文
Organizer
第71回応用物理学会学術講演会
Place of Presentation
長崎大学
Related Report
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[Presentation] Growth and conductivity control of high quality AlGaN and its application to high performance ultraviolet laser diodes2009
Author(s)
H.Amano, S.A.Inada, K.Nagamatsu, K.Takeda, T.Asai, K.Nagata, K.Nonaka, T.Mori, H.Tsuzuki, M.Iwaya, S.Kamiyama, I.Akasaki
Organizer
SIMC-XV 招待講演
Place of Presentation
Vilnius, Lithuania.
Year and Date
2009-06-16
Related Report
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[Presentation] Growth and conductivity control of high quality AlGaN and its application to high performance ultraviolet laser diodes2009
Author(s)
H.Amano, S.A.Inada, K.Nagamatsu, K.Takeda, T.Asai, K.Nagata, K.Nonaka, T.Mori, H.Tsuzuki, M.Iwaya, S.Kamiyama, I.Akasaki
Organizer
SIMC-XV
Place of Presentation
Vilnius, Lithuania
Year and Date
2009-06-16
Related Report
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[Presentation] p-AlGaNの活性化アニール特性2009
Author(s)
永田賢吾, 竹田健一郎, 市川友紀, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
Organizer
日本結晶成長学会ナノエピ分科会 第1回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の未来を展望する」
Place of Presentation
東京農工大小金井キャンパス1号館1階ホール
Year and Date
2009-05-15
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[Presentation] Mg-doped AIN下地層を用いたAlGaN成長2009
Author(s)
浅井俊晶, 野中健太郎, 伴和仁, 永田賢昌, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇, SAT-2, pp.85, (2009-5)
Organizer
日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
Place of Presentation
東京農工大小金井キャンパス1号館1階ホール
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[Presentation] 斜めファセット面を用いたAlGaNの全面低転位化2009
Author(s)
竹田健一郎, 森史明, 岩谷素顕, 上山智, 天野浩, 赤崎勇, 日本結晶成長学会ナノエピ分科会予稿集, SAT-18, (2009-5)
Organizer
第1回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の未来を展望する」
Place of Presentation
東京農工大小金井キャンパス1号館1階ホール
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[Presentation] High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer2008
Author(s)
H. Tsuzuki, F. Mori, K. Takeda, M. Twaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, H. Kan
Organizer
Abstracts of the International Workshop on Nitride semiconductors
Place of Presentation
Montreux, Swiss
Year and Date
2008-10-08
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[Presentation] Activation energy of Mg in AlGaN2008
Author(s)
K. Nagamatsu, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano, I. and Akasaki
Organizer
International Workshop on Nitride Semiconductors 2008
Place of Presentation
Montreux, Swiss
Year and Date
2008-10-08
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[Presentation] ELOを用いた高温MOVPE成長AlN/Sapphire基板上のUV-LD特性評価2008
Author(s)
都築宏俊, 森史明, 市川友紀, 竹田健一郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇, 吉田治正, 桑原正和, 山下陽滋, 菅博文
Organizer
第69回応用物理学会学術講演会講演予稿集
Place of Presentation
中部大
Year and Date
2008-09-05
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[Presentation] 高正孔濃度p型AlGaN2008
Author(s)
永松謙太郎, 竹田健一郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
Organizer
特定領域研究「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」公開シンポジウム
Place of Presentation
東京
Year and Date
2008-08-02
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[Presentation] Novel UV devices on high quality AlGaN using grooved template2008
Author(s)
H. Tsuzuki, F. Mori, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, H. Kan
Organizer
Abstracts of the Second International Symposium on Growth of III-Nitrides
Place of Presentation
伊豆
Year and Date
2008-07-07
Related Report
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[Presentation] Short wavelength semiconductor laser diodes2008
Author(s)
H. Amano, H. Tsuzuki, K. Takeda, K. Nagamatsu, M. Iwaya, S. Kamiyama, I. Akasaki
Organizer
Japan- Brazil Memorial Symposium on Science and Technology for the Celebration of 100 Years of Japanese Immigration in Brazil
Place of Presentation
Universidade de Sao Paulo, Brazil
Year and Date
2008-06-25
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[Presentation] Epitaxial lateral overgrowth of low dislocation density AlN by high temperature MOVPE and fabrication of UV optoelectronics devices2007
Author(s)
K. Nagamatsu, N. Okada, F. Mori, K. Iida, M. Imura, K. Balakrishnan, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
Organizer
The 13th Conference on Vapor Growth and Epitaxy
Place of Presentation
Salt Lake City, Utah, USA
Related Report
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[Presentation] Microstructure of AlN grown on SiC by high-temperature metalorganic vapor phase epitaxy and epitaxial lateral overgrowth2007
Author(s)
M. Imura, N. Okada, B. Krishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
Organizer
The 13th Conference on Vapor Growth and Epitaxy
Place of Presentation
Salt Lake City, Utah, USA
Related Report
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[Presentation] Microstructure of Threading Dislocations Caused by Grain Boundaries in AlN on Sapphire Substrate2007
Author(s)
M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
Organizer
The 7th International Conference of Nitride Semi conductors
Place of Presentation
Las Vegas, Nevada, USA
Related Report
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[Presentation] Critical Issue in Growing High Quality Thick AlGaN by High-Temperature MOVPE2007
Author(s)
N. Kato, T. Sumii, S. Sato, H. Sugimura, N. Okada, M. Imura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. B andoh
Organizer
The 7th International Conference of Nitride Semiconductors
Place of Presentation
Las Vegas, Nevada, USA
Related Report
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[Presentation] Internal Quantum Efficiency of Al_xGa_<1-x>N (0<x<1) on AlN Template2007
Author(s)
N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. Bando, H. Murotani, Y. Yamada
Organizer
The 7th International Conference of Nitride Semiconductors
Place of Presentation
Las Vegas, Nevada, USA
Related Report
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[Presentation] Stimulated Emission from Nonpolar and Polar AlN2007
Author(s)
N. Okada, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. Bando, H. Murotani, Y. Yamada
Organizer
The 7th International Conference of Nitride Semiconductors
Place of Presentation
Las Vegas, Nevada, USA
Related Report
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[Presentation] UV Emitters Grown on High Crystalline Quality AlGaN on Sapphire2007
Author(s)
K. Iida, F. Mori, H. Watanabe, K. Takeda, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama. T. Takagi. A. Bandoh
Organizer
The 7th International Conference of Nitride Semiconductors
Place of Presentation
Las Vegas, Nevada, USA
Related Report
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[Presentation] Effect of sapphire mis-orientation on the growth of AlN by high temperature MOVPE2007
Author(s)
K. Nagamatsu, N. Okada, N. Kato, T. Sumii, A. Bando, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
Organizer
The 7th International Conference of Nitride Semiconductors
Place of Presentation
Las Vegas, Nevada, USA
Related Report
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[Presentation] Nitride-Based UV Lasers2007
Author(s)
H. Amano, N. Kato, N. Okada, T. K awashima, K. Iida, K. Nagamatsu, M. Imura, K. Balakrishnan, M. Iwaya, S. Kamiyama and I. Akasaki
Organizer
The 20th Annual Meeting of the IEEE Lasers & Electro-Optics Society (LEOS 2007)
Place of Presentation
Florida, USA
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