| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
|---|
| Project/Area Number |
18069012
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Science and Engineering
|
|---|
| Research Institution | Ritsumeikan University |
|---|
Principal Investigator |
NANISHI Yasushi Ritsumeikan University, 理工学部, 教授 (40268157)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
ARAKI Tsutomu 立命館大学, 理工学, 准教授 (20312126)
NAOI Hiroyuki 立命館大学, COE推進機構, ポストドクトラルフェロー (10373101)
HYUNSEOK Na 立命館大学, COE推進機構, ポストドクトラルフェロー (80411239)
山口 智広 立命館大学, 総合理工学研究機構, 研究員 (50454517)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
YAMAGUCHI Tomohiro 立命館大学, 総合理工学研究機構, ポストドクトラルフェロー (50454517)
KANEKO Masamitsu 立命館大学, 総合理工学研究機構, ポストドクトラルフェロー (70374709)
|
|---|
| Research Collaborator |
WANG Ke 立命館大学, 総合理工学研究機構, 日本学術振興会特別研究員
|
|---|
| Project Period (FY) |
2006 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥134,200,000 (Direct Cost: ¥134,200,000)
Fiscal Year 2010: ¥13,800,000 (Direct Cost: ¥13,800,000)
Fiscal Year 2009: ¥13,800,000 (Direct Cost: ¥13,800,000)
Fiscal Year 2008: ¥27,700,000 (Direct Cost: ¥27,700,000)
Fiscal Year 2007: ¥46,200,000 (Direct Cost: ¥46,200,000)
Fiscal Year 2006: ¥32,700,000 (Direct Cost: ¥32,700,000)
|
|---|
| Keywords | InN / RF-MBE / 窒化物半導体 / ナノ構造 / 窒化インジウム / 分子線エピタキシー法 / p型ドーピング / 窒化インジウムガリウム / サーモパワー / Seebeck係数 / DERI法 / 分子線エビタキシー法 / その場観察 / RHEED / ラジカルビーム / 光反射率 / 多重量子井戸 / ナノコラム / p形ドーピング / 無極性 |
|---|
| Research Abstract |
Important intrinsic issues to realize InN-based device application are (1) high density of dislocations, (2) high concentration of residual donors, (3) surface accumulation of carriers, (4) p-type doping and (5) formation of high-quality hetero-interface. Our research is aimed to solve these intrinsic issues by developing advanced RF-MBE growth technique. In this study, we have developed a new InN RF-MBE growth method named DERI (Droplet Elimination by Radical-beam Irradiation), which enable us to obtain high-quality InN, thick InGaN and InN/InGaN multi quantum well structure simply and reproducibly. We have also studied Mg-doping for p-type InN systematically, and evidences for the existence of free holes were successfully obtained.
|
