Research for high-efficiency deep-UV emitting devices using quaternary InAlGaN nitride semiconductors

• Project Area: Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
• Project/Area Number: 18069014
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: The Institute of Physical and Chemical Research
• Principal Investigator: HIRAYAMA Hideki The Institute of Physical and Chemical Research, テラヘルツ量子素子研究チーム, チームリーダー (70270593)
• Project Period (FY): 2006 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥67,800,000 (Direct Cost: ¥67,800,000); Fiscal Year 2010: ¥7,600,000 (Direct Cost: ¥7,600,000); Fiscal Year 2009: ¥7,600,000 (Direct Cost: ¥7,600,000); Fiscal Year 2008: ¥7,600,000 (Direct Cost: ¥7,600,000); Fiscal Year 2007: ¥20,400,000 (Direct Cost: ¥20,400,000); Fiscal Year 2006: ¥24,600,000 (Direct Cost: ¥24,600,000)
• Keywords: 深紫外LED / AlGaN / InAlGaN4元混晶 / 内部量子効率 / 貫通転位密度 / 結晶成長 / 外部量子効率 / 注入効率 / InAlGaN / AlNテンプレート / 深外LED / AIGaN / InAIGaN / AINテンプレート / 紫外LED / 貫通転位 / 窒化物半導体 / InAlGN4元混晶 / 高輝度LED / p型半導体 / In組成変調

Research Abstract

High-efficiency deep-ultraviolet (DUV) semiconductor light sources with emission wavelengths between 250-350 nm are in strong demand for various applications including sterilization, water purification, medicine, and biochemistry. In this work, we realized high-efficiency DUV light-emitting diodes (LEDs) by developing low threading-dislocation density AlN crystals using pulse gas feeding growth method, by realizing high internal-quantum efficiency (IQE) emitting layers using quaternary InAlGaN quantum wells (QWs) and by improving injection efficiency using multi-quantum barrier (MQB) electron-blocking layers (EBLs).

Research Products

• [Journal Article] Molwcular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplets elimination by thermal annealing technique (2011)
  • Author(s): Wataru Terashima, H.Hirayama
  • Journal Title: Phys.Status, Solidi A Volume: (In press)
  • Peer Reviewed
• [Journal Article] Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate (2011)
  • Author(s): Wataru Terashima, H.Hirayama
  • Journal Title: Phys.Status Solidi Volume: (In press)
  • Peer Reviewed
• [Journal Article] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer (2010)
  • Author(s): H.Hirayama, Y.Tsukada, T.Maeda, N.Kamata
  • Journal Title: Appl.Phys.Express 3 Pages: 31002-31002
  • NAID: 10027013818
• [Journal Article] AlGaN系殺菌用途紫外LEDの進展と今後の展望 (2010)
  • Author(s): 平山秀樹
  • Journal Title: 表面技術、特集「LED照明と表面技術」 Volume: 61巻9号 Pages: 637-640
  • NAID: 10026629249
• [Journal Article] The utility of droplet elimination by thermal annealing technique for fabrication of GaN/AlGaN Terahertz quatum cascade structure by radio frequency molecular beam epitaxy (2010)
  • Author(s): Wataru Terashima, H.Hirayama
  • Journal Title: Appl.Phys.Express Volume: 3 Pages: 125501-125501
  • Peer Reviewed
• [Journal Article] Marked Enhancement in the efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquatum-Barrier Electron Blocking Layer (2010)
  • Author(s): H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
  • Journal Title: Appl.Phys.Express.3,031002 3
  • Peer Reviewed
• [Journal Article] 222nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties (2010)
  • Author(s): H.Hirayama, N.Noguchi, N.Kamata
  • Journal Title: Appl.Phys Express (in press)
  • NAID: 10027013951
  • Peer Reviewed
• [Journal Article] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN on sapphire (2009)
  • Author(s): H.Hirayama, N.Noguchi, S.Fujikawa, J.Norimatsu, T.Takano, K.Tsubaki, N.Kamata
  • Journal Title: Physica Status Solidi (a) 206 Pages: 1176-1182
• [Journal Article] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN on sapphire (2009)
  • Author(s): H.Hirayama, N.Noguchi, S.Fujikawa, J.Norimatsu, T.Takano, K.Tsubaki, N.kamata
  • Journal Title: Physica Status Solidi(a) 206 Pages: 1176-1182
  • Peer Reviewed
• [Journal Article] Milliwatt power 270nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template (2009)
  • Author(s): H.Hirayama, J.Norimatsu, N.Noguchi, S.Fujikawa, T.Takano, K.Tsubaki, N.Kamata
  • Journal Title: Physica Status Solidi(c) 5
  • Peer Reviewed
• [Journal Article] Fabrication of low threading dislocation density ELO-AIN template for the application to deep-UV LEDs (2009)
  • Author(s): H.Hirayama, S.Fujikawa, J.Norimatsu, T.Takano, K.Tsubaki, N.kamata
  • Journal Title: Physica Status Solidi(c) 6
  • Peer Reviewed
• [Journal Article] 222nm single-peaked deep-UV LEDE with thin AlGaN quantum well layers (2009)
  • Author(s): N.Noguchi, H.Hirayama, T.Yatabe, N.Kamata
  • Journal Title: Physica Status Solidi(c) 6
  • Peer Reviewed
• [Journal Article] Realization of 280nm band AlGaN based UV-LED on large area AlN template with high crystalline quality (2009)
  • Author(s): T.Takano, S.Fujikawa, K.Tsubaki, H.Hirayama
  • Journal Title: Physica Status Solidi(c) 6
  • Peer Reviewed
• [Journal Article] Extremely high efficiency 280nm-band emission from quaternary InAlGaN QWs realized by controlling Si-doped layers (2009)
  • Author(s): S.Fujikawa, H.Hirayama, T.Takano, K.Tsubaki
  • Journal Title: Physica Status Solidi(c) 6
  • Peer Reviewed
• [Journal Article] 222-282nm AlGaN and InAlGaN based deep-UV-LEDs fabricated on high-quality AlN template (2009)
  • Author(s): H.Hirayama, N.Noguchi, S.Fujikawa, J.Norimatsu K.Kamata, T.Takano, K.Tsubaki
  • Journal Title: SPIE Pages: 7216-58
  • Peer Reviewed
• [Journal Article] 222-282nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AIN template (2009)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Proceedings of SPIE 7216 Pages: 7216-58
• [Journal Article] 280nm帯高出力紫外LED (2009)
  • Author(s): 平山 秀樹
  • Journal Title: 月刊ディスプレー 2月号 Pages: 33-42
• [Journal Article] 227 nm AlGaN light-emitting diode with 0.15 mW output power realized using thin quantum well and AlN buffer with reduced threading dislocation density (2008)
  • Author(s): H.Hirayama, N.Noguchi, T.Yatabe, N.Kamata
  • Journal Title: Appl.Phys.Express 1 Pages: 51101-51101
  • NAID: 10025080177
• [Journal Article] 227 nm AlGaN light-emitting diode with 0.15 mW output power realized using thin quantum well and AlN buffer with reduced threading dislocation density (2008)
  • Author(s): H. Hirayama, N. Noguchi, T. Yatabe and N. Kamata
  • Journal Title: Appl. Phys. Express 1 Pages: 51101-51101
  • NAID: 10025080177
  • Peer Reviewed
• [Journal Article] 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire (2008)
  • Author(s): H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi and N. Kamata
  • Journal Title: Physica Status Solidi (c) 5 Pages: 2969-2969
  • Peer Reviewed
• [Journal Article] Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire (2008)
  • Author(s): H. Hirayama, T. Yatabe, T. Ohashi and N. Kamata
  • Journal Title: Physica Status Solidi (c) 5 Pages: 2283-2283
  • Peer Reviewed
• [Journal Article] 227nm AlGaN light-emitting diode with 0.15mW output power realized using thin quantum well and AlN buffer with reduced threading dislocation density (2008)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Appl. Phys. Express 1
  • NAID: 10025080177
  • Peer Reviewed
• [Journal Article] 226-273nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire (2008)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Physica Status Solidi (c) 5 Pages: 2969-2971
  • Peer Reviewed
• [Journal Article] Remarkable enhancement of 254-280nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AIN buffer on sapphire (2008)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Physica Status Solidi (c) 5 Pages: 2283-2285
  • Peer Reviewed
• [Journal Article] Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335nm fabricated by an anti-surfactant method (2008)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Physica Status Solidi (c) 5 Pages: 2312-2314
  • Peer Reviewed
• [Journal Article] 27-261nm AlGaN-based deep ultraviolet light-emitting diodes fabricated on high-quality AlN buffers on sapphire (2008)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Journal of Light and Visual Environment 32 Pages: 79-82
  • Peer Reviewed
• [Journal Article] Development of 220-270nm AlGaN-based deep UV-LEDs (2008)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Electrical Engineering of Japan 128 Pages: 748-757
  • NAID: 110006684469
  • Peer Reviewed
• [Journal Article] Recent progresses of 220-270nm AlGaN-based deep-UV LEDs (2008)
  • Author(s): H. Hirayama
  • Journal Title: J. Illum. Engng. Inst. Jpn. 92 Pages: 311-315
  • Peer Reviewed
• [Journal Article] Realization of 340-nm-band high-output-power (7mW) InAlGaN quantum well ultraviolet light-emitting diode with p-type InAlGaN (2008)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Jap. J. Appl. Phys. 47 Pages: 2941-2944
  • NAID: 210000064629
  • Peer Reviewed
• [Journal Article] Improvement of surface roughness and reduction of threading-dislocation density in AlN/AlGaN templates on sapphire by employing trimethylaluminum pulsed supply growth (2008)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Physica Status Solidi (c) 5 Pages: 1968-1970
  • Peer Reviewed
• [Journal Article] Realization of 340nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow (2008)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Physica Status Solidi (c) 5 Pages: 2260-2262
  • Peer Reviewed
• [Journal Article] 340nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers (2008)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Physica Status Solidi (c) 5 Pages: 2280-2282
  • Peer Reviewed
• [Journal Article] Remarkable improvement of output power for InAlGaN based ultraviolet LED by improving the crystal quality of AlN/AlGaN templates (2008)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Physica Status Solidi (c) 5 Pages: 2102-2104
  • Peer Reviewed
• [Journal Article] Realization of 340nm-band high-power UV-LED using p-type InAlGaN (2008)
  • Author(s): H. Hirayama, et al,
  • Journal Title: Journal of light and Visual Environment 32 Pages: 83-37
  • NAID: 110006663890
  • Peer Reviewed
• [Journal Article] 280nm帯 InAlGaN 高出力紫外 LED (2008)
  • Author(s): 平山 秀樹, 他3名
  • Journal Title: 電子情報通信学会技術報告 169 Pages: 83-88
  • NAID: 110007127193
• [Journal Article] ELO-AlN テンプレート上に作製した270nm帯 AlGaN 紫外LED (2008)
  • Author(s): 平山 秀樹, 他6名
  • Journal Title: 電子情報通信学会技術報告 168 Pages: 77-82
  • NAID: 110007127194
• [Journal Article] 230nm帯AlGaN紫外LEDの高出力化 (2008)
  • Author(s): 平山 秀樹, 他3名
  • Journal Title: 電子情報通信学会技術報告 167 Pages: 71-76
  • NAID: 110007127195
• [Journal Article] 230-270nm深紫外AlGaN系LEDの進展 (2008)
  • Author(s): 平山 秀樹, 他3名
  • Journal Title: 電気学会論文誌 C 128 Pages: 748-756
  • NAID: 10021132357
  • Peer Reviewed
• [Journal Article] 231-261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire (2007)
  • Author(s): H.Hirayama, T.Yatabe, N.Noguchi, T.Ohashi, N.Kamata
  • Journal Title: Appl.Phys.Lett. 91 Pages: 71901-71901
• [Journal Article] 231-261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire (2007)
  • Author(s): H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi and N. Kamata
  • Journal Title: Appl. Phys. Lett 91 Pages: 71901-71901
  • Peer Reviewed
• [Journal Article] "231-261nm AIGaN deep-ultraviolet light-emitting diodes fabri cated on AIN multilayer buffers grown by ammonia pulse-flow method on sapphire" (2007)
  • Author(s): H. Hirayama
  • Journal Title: Appl. Phys. Lett. 91 Pages: 0719011-3
  • Peer Reviewed
• [Journal Article] 「p-InALGaNと高品質AINを用いた340nm帯高出力LED」 (2007)
  • Author(s): 藤川 紗千恵、高野隆好、近藤行廣、平山秀樹
  • Journal Title: 電子情報通信学会技術研究報告 107 Pages: 29-34
• [Journal Article] 「深紫外半導体発光素子およびTHz量子カスケードレーザの開発」 (2007)
  • Author(s): 平山秀樹
  • Journal Title: 電気学会、光・量子デバイス研究会資料 OQD-07-60 Pages: 1-10
  • NAID: 10025660536
• [Journal Article] "230-350nm帯AIGaN系深紫外高輝度LEDの進展と応用" (2007)
  • Author(s): 平山秀樹
  • Journal Title: オプトロニクス(OPTROMICS) 200710月号 Pages: 110-119
• [Journal Article] "250-350nm帯AlGaN系深紫外高輝度LEDの開発" (2007)
  • Author(s): 平山秀樹、高野隆義、藤川紗千恵、大橋智昭、谷田部透、鎌田憲彦、近藤行廣、
  • Journal Title: O plus E Vol.29 Pages: 572-581
• [Journal Article] High-efficiency UV-LEDs using quaternary InAlGaN (2006)
  • Author(s): H.Hirayama et al.
  • Journal Title: Electrical Engineering in Japan 157・3 Pages: 225-232
  • NAID: 210000174185
• [Journal Article] Influence of residual oxygen impurity in quaternary InAlGaN multiple quantum well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates (2006)
  • Author(s): T.Kyono, H.Hirayama et al.
  • Journal Title: J. Appl. Phys 99・11 Pages: 1145091-7
• [Journal Article] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN
  • Author(s): H. Hirayama, N. Noguchi, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki and N. Kamata
  • Journal Title: physica Status Solidi (a) in press
  • Peer Reviewed
• [Presentation] AlGaN系深紫外LEDの進展と展望 (2011)
  • Author(s): 平山秀樹
  • Organizer: 電気学会パワー半導体レーザパワーLED応用技術調査専門委員会研究会
  • Place of Presentation: 市ヶ谷/東京千代田区
  • Year and Date: 2011-02-18
• [Presentation] AlGaN系紫外LEDの進展と展望 (2011)
  • Author(s): 平山秀樹
  • Organizer: 同志社大学界面現象研究センター研究会
  • Place of Presentation: 同志社大学/京都市京田辺市
  • Year and Date: 2011-01-06
• [Presentation] Recent progress and future prospects of AlGaN based deep-UV LEDs (2011)
  • Author(s): H.Hirayama
  • Organizer: German-Japanese-Spanish Workshop on Frontier Photonic and electronic Materials and Devices
  • Place of Presentation: Granada Spain
• [Presentation] MQBを用いた230nm帯短波長深紫外LEDの効率改善 (2011)
  • Author(s): 塚田悠介, 平山秀樹, 秋葉雅弘, 富田優志, 前田哲利, 鎌田憲彦
  • Organizer: 2011春応用物理学会(第58回)
  • Place of Presentation: 神奈川工科大学/神奈川県厚木市
• [Presentation] A軸方向傾斜c面サファイア上に作製した高効率紫外LED (2011)
  • Author(s): 藤川紗千恵, 平山秀樹, 前田哲利
  • Organizer: 2011春応用物理学会(第58回)
  • Place of Presentation: 神奈川工科大学/神奈川県厚木市
• [Presentation] ELO-AlNテンプレートを用いたSi基板上深紫外LED (2011)
  • Author(s): 美濃卓哉, 高野隆好, 椿健治, 平山秀樹, 杉山正和
  • Organizer: 2011春応用物理学会(第58回)
  • Place of Presentation: 神奈川工科大学/神奈川県厚木市
• [Presentation] Properties of GaAs/AlxGal-xAs terahertz quantum cascade lasers with different barrier composition (2011)
  • Author(s): Tsung-Tse Lin, Leiying Ying, Hideki Hirayama
  • Organizer: 2011春応用物理学会(第58回)
  • Place of Presentation: 神奈川工科大学/神奈川県厚木市
• [Presentation] AlGaN系深紫外LEDの進展と今後の展望 (2011)
  • Author(s): 平山秀樹
  • Organizer: 文部科学省科学研究費補助金特定領域研究「窒化物光半導体のフロンティア」-材料洗剤能力の極限発現-公開シンポジウム
  • Place of Presentation: 修善寺/静岡県
• [Presentation] 230-350nm帯InAlGaN系紫外高効率発光デバイスの研究 (2010)
  • Author(s): 平山秀樹
  • Organizer: CREST「新機能創成に向けた光・光量子科学技術」研究領域、光・光量子科学技術の新展開、第三回公開シンポジウム
  • Place of Presentation: 日本科学未来館/東京都江東区
  • Year and Date: 2010-11-26
• [Presentation] 低貫通転位密度ALNの結晶成長法開拓と220-280nm帯深紫外LEDの進展 (2010)
  • Author(s): 塚田悠介, 平山秀樹, 秋葉雅弘, 鎌田憲彦
  • Organizer: CREST「新機能創成に向けた光・光量子科学技術」研究領域光・光量子科学技術の新展開 第3回シンポジウム
  • Place of Presentation: 日本科学未来館/東京都江東区
  • Year and Date: 2010-11-26
• [Presentation] InAlGaN4元混晶を用いた280nm帯殺菌用途深紫外LEDの進展 (2010)
  • Author(s): 藤川紗千恵, 平山秀樹
  • Organizer: CREST「新機能創成に向けた光・光量子科学技術」研究領域光・光量子科学技術の新展開 第3回シンポジウム
  • Place of Presentation: 日本科学未来館/東京都江東区
  • Year and Date: 2010-11-26
• [Presentation] 多重量子障壁(MQB)を用いた短波長深紫外LEDの飛躍的高出力化 (2010)
  • Author(s): 塚田悠介, 平山秀樹, 秋葉雅弘, 鎌田憲彦
  • Organizer: CREST「新機能創成に向けた光・光量子科学技術」研究領域光・光量子科学技術の新展開 第3回シンポジウム
  • Place of Presentation: 日本科学未来館/東京都江東区
  • Year and Date: 2010-11-26
• [Presentation] 光取り出し効率改善によるAlGaN系深紫外LEDの高効率化 (2010)
  • Author(s): 秋葉雅弘, 平山秀樹, 塚田悠介, 鎌田憲彦
  • Organizer: CREST「新機能創成に向けた光・光量子科学技術」研究領域光・光量子科学技術の新展開 第3回シンポジウム.
  • Place of Presentation: 日本科学未来館/東京都江東区
  • Year and Date: 2010-11-26
• [Presentation] AlGaN系紫外LEDの進展と展望 (2010)
  • Author(s): 平山秀樹
  • Organizer: 月刊OPTRONICS主催グリーンフォトニクス特別セミナー
  • Place of Presentation: 東京都立産業貿易センター/東京都港区
  • Year and Date: 2010-11-12
• [Presentation] AlGaN系紫外LEDの進展と展望 (2010)
  • Author(s): 平山秀樹
  • Organizer: JEITA(電子情報技術産業協会)ワイドバンドギャップ半導体デバイス技術分科会研究会
  • Place of Presentation: JEITA/東京都千代田区
  • Year and Date: 2010-11-10
• [Presentation] AlGaN系紫外LEDの進展と展望 (2010)
  • Author(s): 平山秀樹
  • Organizer: サムコ株式会社セミナー
  • Place of Presentation: サムコ株式会社/京都府伏見区
  • Year and Date: 2010-10-05
• [Presentation] AlGaN系深紫外LEDの高効率化 (2010)
  • Author(s): 平山秀樹
  • Organizer: 電子情報通信学会ソサイエティ大会シンポジウムレーザー量子エレクトロニクス研究会
  • Place of Presentation: 大阪府立大学/大阪府堺市
  • Year and Date: 2010-09-17
• [Presentation] 220-280nm AlGaN系紫外LEDの進展 (2010)
  • Author(s): 平山秀樹
  • Organizer: 第71回応用物理学会学術講演会シンポジウム「ワイドギャップ窒化物AlGaNの結晶評価と深紫外光デバイス応用」結晶工学分科会企画
  • Place of Presentation: 長崎大学/長崎県長崎市
  • Year and Date: 2010-09-16
• [Presentation] 近未来の光、テラヘルツ光・深紫外光の魅力-くらしを変える新しい光と応用の広がり- (2010)
  • Author(s): 平山秀樹
  • Organizer: 仙台市市民講座(講座仙台学2010)「仙台とくらし」
  • Place of Presentation: 仙台国際センター/宮城県仙台市
  • Year and Date: 2010-07-24
• [Presentation] AlGaN系材料界面制御技術と深紫外LEDの進展 (2010)
  • Author(s): 平山秀樹
  • Organizer: アモルファス・ナノ材料 日本学術振興会第147委員会(第108回研究会)
  • Place of Presentation: 主婦会館/東京都新宿区
  • Year and Date: 2010-07-09
• [Presentation] AlGaN系紫外LEDの進展と展望 (2010)
  • Author(s): 平山秀樹
  • Organizer: 応用物理学会・応用電子物性分科会研究例会「紫外光デバイスの進展:材料物性と応用」
  • Place of Presentation: 大阪大学銀杏会館/大阪府吹田市
  • Year and Date: 2010-05-21
• [Presentation] InAlGaN深紫外発光ダイオードと将来展開 (2010)
  • Author(s): 平山秀樹
  • Organizer: JST戦略的イノベーション創出推進シンポジウム「無機発光素子を用いた高機能照明・次世代レーザ技術の開発」
  • Place of Presentation: JST東京本部/東京都千代田区
  • Year and Date: 2010-04-26
• [Presentation] Advances of AlGaN-based High-Efficiency deep-UV LEDs (2010)
  • Author(s): H.hirayama
  • Organizer: Asia Communications and Photonics(ACP2010)
  • Place of Presentation: Shanghai, China
• [Presentation] Short-wavelength high-efficiency deep-UV LEDs realized by improving injection efficiency (2010)
  • Author(s): H.Hirayama
  • Organizer: International Workshop on Nitride Semiconductors2010(IWM201)
  • Place of Presentation: Florida, USA
• [Presentation] Recent progress of AlGaN based deep-UV LEDs (2010)
  • Author(s): H.Hirayama
  • Organizer: 7^<th> China International Exhibition and Forum on Solid State Lighting(CHINASSL2010)
  • Place of Presentation: Shinzhen, China
• [Presentation] Recent progress of AlGaN based deep-UV LEDs (2010)
  • Author(s): H.Hirayama
  • Organizer: Seoul Optodevice Forum
  • Place of Presentation: Seoul Semicondutor/Optodevice Co, Ltd, Seoul, Korea
• [Presentation] Recent progress of AlGaN based deep-UV LEDs (2010)
  • Author(s): H.Hirayama
  • Organizer: LG Innotek Forum
  • Place of Presentation: LG Innotek Co., Ltd., Seoul Korea
• [Presentation] Progress of AlGaN-based Deep-UV LEDs using high-quality ALN on sapphire (2010)
  • Author(s): H.Hirayama, Y.Tsukada, N.Kamata
  • Organizer: 22th International Semiconductor Laser Conference(ISLC2010)
  • Place of Presentation: Kyoto, Japan
• [Presentation] Marked efficiency enhancement of AlGaN-based deep-UV LEDs using Multiquantum-barrier (2010)
  • Author(s): Y.Tsukada, H.Hirayama, N.Kamata
  • Organizer: 22th International Semiconductor Laser Conference(ISLC2010)
  • Place of Presentation: Kyoto, Japan
• [Presentation] First achievement of deep-UV LEDs on Si wafer (2010)
  • Author(s): S.Fujikawa, H.Hirayama
  • Organizer: 22th International Semiconductor Laser Conference (ISLC2010)
  • Place of Presentation: Kyoto, Japan
• [Presentation] High-power short-wavelength AlGaN deep-UV LEDs realized by improving injection efficiency (2010)
  • Author(s): H.Hirayama, Y.Tsukada, M.Akiba, N.Maeda, N.Kamata
  • Organizer: International Workshop on Nitride Semiconductors(IWN2010)
  • Place of Presentation: Tampa, Florida, USA
• [Presentation] Optimization of Multiquantum-barrier(MQB) structure of AlGaN deep-UV LEDs for realizing high injection efficiency (2010)
  • Author(s): Y.Tsukada, H.Hirayama, N.Kamata
  • Organizer: International Workshop on Nitride Semiconductors(IWN2010)
  • Place of Presentation: Tampa, Florida, USA
• [Presentation] Realization of InAlGaN QW deep-UV LEDs on Si(111) Substrates (2010)
  • Author(s): S.Fujikawa, H.Hirayama
  • Organizer: International Workshop on Nitride Semiconductors(IWN2010)
  • Place of Presentation: Tampa, Florida, USA
• [Presentation] Efficiency enhancementin AlGaN deep-UV LEDs using high-reflectivity Al-based p-type electrode (2010)
  • Author(s): M.Akiba, H.Hirayama, Y.Tsukada, N.Maeda, N.kamata
  • Organizer: International Workshop on Nitride Semiconductors(IWN2010)
  • Place of Presentation: Tampa, Florida, USA
• [Presentation] First observation of spontaneous emission on injection current from GaN/AlGaN Terahertz quantum cascade laser (2010)
  • Author(s): W.Terashima, H.Hirayama
  • Organizer: International Workshop on Nitride Semiconductors(IWN2010)
  • Place of Presentation: Tampa, Florida, USA
• [Presentation] Efficiency enhancement in 250nm-band AlGaN deep-UV LEDs using Multiquantum-barrier (2010)
  • Author(s): H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
  • Organizer: The 3^<rd> International Symposium on Growth of III-Nitrides(ISGN-3)
  • Place of Presentation: Montpellier, France
• [Presentation] 280nm-band InAlGaN deep-UV LED on Silicon(111) substrate (2010)
  • Author(s): S.Fujikawa, H.Hirayama
  • Organizer: The 3^<rd> International Symposium on Growth of III-Nitrides(ISGN-3)
  • Place of Presentation: Montpellier, France
• [Presentation] RF-MBE growth of terahertz quantum cascade laser structure on GaN Substrate using droplets elimination by thermal annealing techique (2010)
  • Author(s): W.Terashima, S.Matsumoto, H.Hirayama
  • Organizer: The 3^<rd> International Symposium on Growth of III-Nitrides (ISGN-3)
  • Place of Presentation: Montpellier, France
• [Presentation] 247-262nm AlGaN deep-UV LEDs using multiquantum-barrier (2010)
  • Author(s): H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
  • Organizer: The 8^<th> International Symposium on Semiconductors Light Emitting Devices(ISSLED2010)
  • Place of Presentation: E3, Beijing, China
• [Presentation] Design of multiquantum-barrier electron-blocking layer for 230-280nm-band AlGaN deep-UV LEDs (2010)
  • Author(s): Y.Tsukada, H.Hirayama, N.Kamata
  • Organizer: The 8^<th> International Symposium on Semiconductors Light Emitting Devices(ISSLED2010)
  • Place of Presentation: I5, Beijing China
• [Presentation] HVPE growth of crack-free thick AlN film in trench-patterned AlN template (2010)
  • Author(s): K.Fujita, K.Okuura, H.Miyake, J.Norimatsu, H.Hirayama
  • Organizer: The 8^<th> International Symposium on Semiconductors Light Emitting Devices(ISSLED2010)
  • Place of Presentation: J4, Beijing China
• [Presentation] Si基板上280nm帯InAlGaN深紫外LED (2010)
  • Author(s): 藤川紗千恵, 平山秀樹
  • Organizer: 2010秋応用物理学会(第71回)
  • Place of Presentation: 長崎大学/長崎県長崎市.
• [Presentation] Ni/Al高反射p型電極を用いたAlGaN深紫外LEDの高効率化 (2010)
  • Author(s): 秋葉雅弘, 平山秀樹, 塚田悠介, 前田哲利, 鎌田憲彦
  • Organizer: 2010秋応用物理学会(第71回)
  • Place of Presentation: 長崎大学/長崎県長崎市
• [Presentation] 多重量子障壁(MQB)を用いた高出力AlGaN系深紫外LED (2010)
  • Author(s): 塚田悠介, 平山秀樹, 秋葉雅弘、前田哲利, 鎌田憲彦
  • Organizer: 2010秋応用物理学会(第71回)
  • Place of Presentation: 長崎大学/長崎県長崎市
• [Presentation] GaN/AlGaN Thz-QCLからの電力注入による事前放出光の観測 (2010)
  • Author(s): 寺嶋亘, 平山秀樹
  • Organizer: 2010秋応用物理学会(第71回)
  • Place of Presentation: 長崎大学/長崎県長崎市
• [Presentation] MQBを用いた高効率250nm帯AlGaN系深紫外LED (2010)
  • Author(s): 平山秀樹, 塚田悠介, 前田哲利, 鎌田憲彦
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学/三重県津市
• [Presentation] AlGaN深紫外LEDの電子注入効率改善のためのMQB設計 (2010)
  • Author(s): 塚田悠介, 平山秀樹, 鎌田憲彦
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学/三重県津市
• [Presentation] Si基板上290nm帯InAlGaN深紫外LEDの実現 (2010)
  • Author(s): 藤川紗千恵, 平山秀樹
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学/三重県津市
• [Presentation] Recent progress of AlGaN based deep-UV LEDs (2010)
  • Author(s): 平山秀樹
  • Organizer: SPIE-Photonics West, Materials, Devices and Applications for Solid State Lighting
  • Place of Presentation: San Francisco, USA
• [Presentation] 多重量子障壁電子ブロック層を用いた250nm帯深紫外LEDの高効率化 (2010)
  • Author(s): 平山秀樹, 塚田悠介, 前田哲利, 鎌田憲彦
  • Organizer: 第57回2010春応用物理学会
  • Place of Presentation: 東海大学/神奈川県厚木市
• [Presentation] InAlGaN窒化物4元混晶を用いた紫外高効率発光デバイスの研究-220nm帯LEDの放射特性とMQBを用いた紫外LED高効率化- (2010)
  • Author(s): 平山秀樹
  • Organizer: 文部科学省科学研究費補助金特定領域研究「窒化物半導体のフロンティア」-材料潜在能力の極限発現-、H21年度報告会
  • Place of Presentation: 滋賀県
• [Presentation] 低貫通転位密度AlNバッファーの開拓と220-280nm帯AlNの実現と紫外LEDへの応用 (2009)
  • Author(s): 平山秀樹, 乗松潤, 塚田悠介, 鎌田憲彦
  • Organizer: CREST「新機能創成に向けた光・光量子科学技術」研究領域、第二回公開シンポジウム「光・光量子科学技術の新展開」
  • Place of Presentation: 日本科学未来館/東京都江東区
  • Year and Date: 2009-11-27
• [Presentation] ELO法を用いた低貫通転位密度AlNの実現と深紫外UEDへの応用 (2009)
  • Author(s): 平山秀樹, 乗松潤, 藤川紗千恵, 塚田悠介, 鎌田憲彦
  • Organizer: CREST「新機能創成に向けた光・光量子科学技術」研究領域、第二回公開シンポジウム「光・光量子科学技術の新展開」
  • Place of Presentation: 日本科学未来館/東京都江東区
  • Year and Date: 2009-11-27
• [Presentation] InAlGaN4元混晶を用いた280nm殺菌用途波長高効率LEDの実現 (2009)
  • Author(s): 藤川紗千恵, 平山秀樹, 高野隆好, 椿健治
  • Organizer: CREST「新機能創成に向けた光・光量子科学技術」研究領域、第二回公開シンポジウム「光・光量子科学技術の新展開」
  • Place of Presentation: 日本科学未来館/東京都江東区
  • Year and Date: 2009-11-27
• [Presentation] In混入AlGaN の発光及びp型特性と高効率深紫外LEDへの応用 (2009)
  • Author(s): 平山秀樹
  • Organizer: 第70回応用物理学会学術講演会、「紫外発光素子の進展」、特定領域研究企画「窒化物半導体のフロンティア」-材料潜在能力の極限発現-
  • Place of Presentation: 富山大学/富山県
  • Year and Date: 2009-09-09
• [Presentation] 最短波長領域・高効率深紫外LEDの開発 (2009)
  • Author(s): 平山秀樹
  • Organizer: (社)日本オプトメカトロニクス協会、光センシング技術部会研究会
  • Place of Presentation: 機械振興会館/東京都港区
  • Year and Date: 2009-09-07
• [Presentation] 230-350nm帯InAlGaN系深紫外高効率発光デバイスの研究 (2009)
  • Author(s): 平山秀樹
  • Organizer: CREST「新機能創成に向けた光・光量子科学技術」研究領域、 H21年度報告会
  • Place of Presentation: 東京
  • Year and Date: 2009-04-28
• [Presentation] 窒化物紫外LEDの進展と今後の展望 (2009)
  • Author(s): (招待講演) 平山秀樹
  • Organizer: 光技術動向調査委員会研究会
  • Place of Presentation: 幕張
  • Year and Date: 2009-01-09
• [Presentation] Progresses of 220-280nm-band deep-UV-LEDs (2009)
  • Author(s): 平山秀樹
  • Organizer: Taiwan Display & Solid State Lighting Conference & Exhibition(TSSL2009)
  • Place of Presentation: Taiwan
• [Presentation] Recent progresses of AlGaN and InAlGaN based deep-UV-LEDs (2009)
  • Author(s): 平山秀樹
  • Organizer: Conference on Lasers and Electro-Optics(CLEO)2009
  • Place of Presentation: Baltimore, USA
• [Presentation] Progresses of 220-280nm-band AlGaN and InAlGaN based deep-UV-LEDs (2009)
  • Author(s): 平山秀樹
  • Organizer: Asian Pacific Workshop on Nitride Semiconductors(APWS2009)
  • Place of Presentation: China
• [Presentation] Low threading dislocation density ELO-AlN for deep-UV LEDs fabricated using large period(>20μm)AlN stripes (2009)
  • Author(s): 平山秀樹, 乗松潤, 藤川紗千恵, 鎌田憲彦
  • Organizer: 8^<th> International Conference on Nitride Semiconductors(ICNS-8)
  • Place of Presentation: Jeju, Korea
• [Presentation] Surface emitting property of 220-250nm-band AlGaN-based deep-UV LEDs (2009)
  • Author(s): 平山秀樹, 塚田悠介, 野口憲路, 乗松潤, 鎌田憲彦
  • Organizer: 8^<th> International Conference on Nitride Semiconductors(ICNS-8)
  • Place of Presentation: Jeju, Korea
• [Presentation] 250nm-band high-efficiency. AlGaN LEDs using In-doped quantum well and p-type layers (2009)
  • Author(s): 塚田悠介, 平山秀樹, 野口憲路, 鎌田憲彦
  • Organizer: 8^<th> International Conference on Nitride Semicond uctors(ICNS-8)
  • Place of Presentation: Jeju, Korea
• [Presentation] High efficiency 280nm InAlGaN quantum well LEDs fabricated using quite low growth rate epitaxy (2009)
  • Author(s): 藤川紗千恵, 平山秀樹, 高野隆好, 椿健治
  • Organizer: 8^<th> International Conference on Nitride Semiconductors(ICNS-8)
  • Place of Presentation: Jeju, Korea
• [Presentation] Low threading dislocation density 4-inch area uniform AlN on sapphire fabricated by controlling AlN unclei (2009)
  • Author(s): 高野隆好, 平山秀樹, 藤川紗千恵, 椿健治
  • Organizer: 8^<th> International Conference on Nitride Semiconductors(ICNS-8)
  • Place of Presentation: Jeju, Korea
• [Presentation] Low threading dislocation density AlN on sapphire for DUV-LEDs realized by using multi-AlN-nucleus layers growth by NH3 pulsed-flow epitaxy (2009)
  • Author(s): 高野隆好, 平山秀樹, 藤川紗千恵, 椿健治
  • Organizer: 8^<th> International Conference on Nitride Semiconductors(ICNS-8)
  • Place of Presentation: Jeju, Korea
• [Presentation] Deep-UV bright emission from high-Al-content InAlGaN quantum dots-growth and optical properties (2009)
  • Author(s): 高野隆好, 平山秀樹, 杉山正和
  • Organizer: 8^<th> International Conference on Nitride Semiconductors(ICNS-8)
  • Place of Presentation: Jeju, Korea
• [Presentation] AlGaN系半導体を用いた深紫外LEDの進展 (2009)
  • Author(s): 平山秀樹
  • Organizer: エクストリームフォトニクスシンポジウム
  • Place of Presentation: 理化学研究所/埼玉県和光市
• [Presentation] 280nm帯紫外LEDにおけるInAlGaNの極低速成長の重要性 (2009)
  • Author(s): 藤川紗千恵, 平山秀樹, 高野隆好, 椿健治
  • Organizer: 第70回2009秋応用物理学会
  • Place of Presentation: 富山大学/富山県
• [Presentation] Siドーピングによる250nm帯InドープAlGaN量子井戸LED高効率化の検討 (2009)
  • Author(s): 塚田悠介, 藤川紗千恵, 平山秀樹, 乗松潤, 鎌田憲彦
  • Organizer: 第70回2009秋応用物理学会
  • Place of Presentation: 富山大学/富山県
• [Presentation] 240nmAlGaN-LEDのCW1.2mW出力動作 (2009)
  • Author(s): 乗松潤, 平山秀樹, 塚田悠介, 鎌田憲彦
  • Organizer: 第70回2009秋応用物理学会
  • Place of Presentation: 富山大学/富山県
• [Presentation] 2"×3MOCVDを用いた核形成層制御によるサファイア基板上AlNの高品質化 (2009)
  • Author(s): 高野隆好, 藤川紗千恵, 平山秀樹, 椿健治
  • Organizer: 第70回2009秋応用物理学会
  • Place of Presentation: 富山大学/富山県
• [Presentation] 周期溝構造AIN/サファイア上への減圧HVPE法によるAlN成長 (2009)
  • Author(s): 藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
  • Organizer: 第70回2009秋応用物理学会
  • Place of Presentation: 富山大学/富山県
• [Presentation] GaN/AlGaN系THz帯量子カスケードレーザの作製と電流注入 (2009)
  • Author(s): 寺島亘, 應磊瑩, 平山秀樹
  • Organizer: 第70回2009秋応用物理学会
  • Place of Presentation: 富山大学/富山県
• [Presentation] 「アンモニアパルス供給多段成長法」の最適化による2インチ3枚対応高品質AlNテンプレートの作製と紫外LEDの作製 (2009)
  • Author(s): 高野隆好, 平山秀樹, 藤川紗千恵, 椿健治
  • Organizer: 第一回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の将来を展望する」
  • Place of Presentation: 東京農工大学/東京都府中市
• [Presentation] 高Al組成InAlGaN4元混晶を用いた深紫外発光量子ドットの結晶成長と発光特性 (2009)
  • Author(s): 高野隆好, 平山秀樹, 杉山正和
  • Organizer: 第一回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の将来を展望する」
  • Place of Presentation: 東京農工大学/東京都府中市
• [Presentation] 220-250nm帯AlGaN量子井戸紫外LEDからの垂直放射の確認 (2009)
  • Author(s): 塚田悠介, 平山秀樹, 野口憲路, 乗松潤, 鎌田憲彦
  • Organizer: 第一回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の将来を展望する」
  • Place of Presentation: 東京農工大学/東京都府中市
• [Presentation] 高Al組成InAlGaN4元混晶の結晶成長と250nm帯深紫外高効率LEDの実現 (2009)
  • Author(s): 塚田悠介, 平山秀樹, 野口憲路, 鎌田憲彦
  • Organizer: 第一回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の将来を展望する」
  • Place of Presentation: 東京農工大学/東京都府中市
• [Presentation] 低速成長による高Al組成InAlGaN4元混晶の高品質結晶成長・評価と280nm帯深紫外高出力LEDの実現 (2009)
  • Author(s): 藤川紗千恵, 平山秀樹, 高野隆好, 椿健治
  • Organizer: 第一回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の将来を展望する」
  • Place of Presentation: 東京農工大学/東京都府中市
• [Presentation] 大周期ストライプを用いた深紫外LED用ELO-AlNテンプレートの貫通転位の低減 (2009)
  • Author(s): 藤川紗千恵, 乗松潤, 平山秀樹, 鎌田憲彦
  • Organizer: 第一回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の将来を展望する」
  • Place of Presentation: 東京農工大学/東京都府中市
• [Presentation] 紫外LED用ELO-AlNテンプレートの作製(横成長領域の拡大) (2009)
  • Author(s): 平山秀樹, 乗松潤, 野口憲路, 鎌田憲彦
  • Organizer: 第56回2009春応用物理学会
  • Place of Presentation: 筑波大学/茨城県つくば市
• [Presentation] 減圧HVPE法による周期溝加工AlNテンプレート上へのAlN厚膜成長 (2009)
  • Author(s): 奥浦一輝, 片桐佑介, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
  • Organizer: 第56回2009春応用物理学会
  • Place of Presentation: 筑波大学/茨城県つくば市
• [Presentation] 230nm帯AlGaN量子井戸紫外LEDの放射特性 (2009)
  • Author(s): 野口憲路, 平山秀樹, 乗松潤, 鎌田憲彦
  • Organizer: 第56回2009春応用物理学会
  • Place of Presentation: 筑波大学/茨城県つくば市
• [Presentation] 250nm帯InAlGaN量子井戸紫外LEDのサブミリワット出力動作 (2009)
  • Author(s): 塚田悠介, 平山秀樹, 藤川紗千恵, 野口憲路, 鎌田憲彦
  • Organizer: 第56回2009春応用物理学会
  • Place of Presentation: 筑波大学/茨城県つくば市
• [Presentation] InAlGaN4元混晶半導体を用いた深紫外発光量子ドットの作製 (2009)
  • Author(s): 高野隆好, 藤川紗千恵, 平山秀樹, 杉山正和
  • Organizer: 第56回2009春応用物理学会
  • Place of Presentation: 筑波大学/茨城県つくば市
• [Presentation] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN template (2009)
  • Author(s): (Invited) H. Hirayama, et al,
  • Organizer: Semiconductor Lasers and LEDs, Gallium Nitride Materials and Devices IV
  • Place of Presentation: San Jose, USA.
• [Presentation] Recent progresses of AlGaN and InAlGaN based deep-UV-LEDs (2009)
  • Author(s): (Invited) H. Hirayama
  • Organizer: Display & Solid State Lighting Conference & Exhibition (DSSL2009)
  • Place of Presentation: Seoul, Korea.
• [Presentation] 220-280nm帯深紫外LEDの最新動向 (2009)
  • Author(s): (招待講演) 平山秀樹
  • Organizer: 国際ナノテクノロジー総合展・技術会議
  • Place of Presentation: 東京ビッグサイト
• [Presentation] 220-280nm帯AlGaN、InAlGaN系紫外LEDの進展 (2008)
  • Author(s): (招待講演) 平山秀樹
  • Organizer: フイドギャップ半導体光・電子デバイス、日本学術振興会第162委員会
  • Place of Presentation: 伊東
  • Year and Date: 2008-12-15
• [Presentation] 220-280nm帯深紫外LEDの最新動向 (2008)
  • Author(s): (招待講演) 平山秀樹
  • Organizer: 全日本科学機器展
  • Place of Presentation: 東京ビッグサイト
  • Year and Date: 2008-11-27
• [Presentation] 窒化物を用いた殺菌用途高出力紫外LEDの開発と今後の展望 (2008)
  • Author(s): (招待講演) 平山秀樹
  • Organizer: 電子ジャーアナル講演会
  • Place of Presentation: 東京
  • Year and Date: 2008-11-19
• [Presentation] 窒化物紫外LEDの進展と実用化へ向けた課題 (2008)
  • Author(s): (招待講演) 平山秀樹
  • Organizer: 技術情報協会セミナー
  • Place of Presentation: 東京テレコムセンター
  • Year and Date: 2008-09-26
• [Presentation] 230-350nm紫外LEDの進展と今後の展望 (2008)
  • Author(s): (招待講演) 平山秀樹
  • Organizer: 伯東セミナー
  • Place of Presentation: 新宿伯東講堂
  • Year and Date: 2008-07-02
• [Presentation] 220-280nm窒化物深紫外LEDの進展と今後の展望 (2008)
  • Author(s): (招待講演) 平山秀樹
  • Organizer: 電気学会パワー半導体レーザ応用システム調査専門委員会
  • Place of Presentation: 市ヶ谷
  • Year and Date: 2008-05-22
• [Presentation] 220-350nm窒化物半導体紫外発光素子の進展と今後の展望 (2008)
  • Author(s): (招待講演) 平山秀樹
  • Organizer: 日本学術振興会、光エレクトロニクス第130委員会
  • Place of Presentation: 森戸記念館
  • Year and Date: 2008-05-12
• [Presentation] 「窒化物半導体による深紫外およびテラヘルツ発光素子開発の現状と展望」 (2008)
  • Author(s): 平山秀樹
  • Organizer: ワイドギャップ半導体光・電子デバイス、日本学術振興会第162委員会、特別講演会(第56回研究会)
  • Place of Presentation: 主婦会館プラザエフ
  • Year and Date: 2008-01-25
• [Presentation] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN (2008)
  • Author(s): (Invited) H. Hirayama, et al,
  • Organizer: International Workshop on Nitride Semiconductors 2008 (IWN2008)
  • Place of Presentation: Montreux, Switzerland
• [Presentation] 222-273nm AlGaN deep ultraviolet light-emitting diodes fabricated on high-quality AlN buffer on sapphire (2008)
  • Author(s): (Invited) H. Hirayama, et al,
  • Organizer: International Symposium on Semiconductor Light emitting devices (ISSLED2008)
  • Place of Presentation: Phoenix, USA.
• [Presentation] 窒化物半導体紫外発光デバイスの進展とMEMSへの融合の可能性 (2008)
  • Author(s): (招待講演) 平山秀樹
  • Organizer: 第25回「センサー・マイクロマシンと応用システム」シンポジウム
  • Place of Presentation: 東京
• [Presentation] Fabrication of low threading dislocation density ELO-AlN template for the application to deep-UV LEDs (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: International Workshop on Nitride Semiconductors 2008 (IWN2008)
  • Place of Presentation: Montreux, Switzerland
• [Presentation] Milliwatt power 270nm-band AlGaN deep-UV LED fabricated on ELO-AlN template (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: International Workshop on Nitride Semiconductors 2008 (IWN2008)
  • Place of Presentation: Montreux, Switzerland
• [Presentation] Extremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: International Workshop on Nitride Semiconductors 2008 (IWN2008)
  • Place of Presentation: Montreux, Switzerland
• [Presentation] 222nm single-peaked deep-UV LED with thin AlGaN quantum well layers (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: International Workshop on Nitride Semiconductors 2008 (IWN2008)
  • Place of Presentation: Montreux, Switzerland
• [Presentation] Realization of 270nm-band AlGaN based UV-LEDs on large area AlN template with high crystalline quality (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: International Workshop on Nitride Semiconductors 2008 (IWN2008)
  • Place of Presentation: Montreux, Switzerland
• [Presentation] 270nm-band AlGaN deep-UV-LEDs fabricated on ELO-AlN buffer (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: 27^<th> Electronic Materials Symposium (EMS-27)
  • Place of Presentation: Izu
• [Presentation] Over 1mW output power 247-254nm AlGaN deep-UV-LEDs realized by reducing threading dislocation density of AlN buffer (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: 27^<th> Electronic Materials Symposium (EMS-27)
  • Place of Presentation: Izu
• [Presentation] High-efficiency 280nm-band InAlGaN quantum well deep-UV LEDs with Si-doped barrier layers (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: 27^<th> Electronic Materials Symposium (EMS-27)
  • Place of Presentation: Izu
• [Presentation] 222nm single-peaked operation of deep-UV AlGaN MQW LED (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: 27^<th> Electronic Materials Symposium (EMS-27)
  • Place of Presentation: Izu
• [Presentation] High-quality AlN buffer fabricated by NH_3 pulse-flow multilayer growth method used for 220-270 nm-band UV-LEDs (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: Second International Symposium on Growth of III-Nitrides (ISGN-2)
  • Place of Presentation: Izu
• [Presentation] Growth of high-Al-content AlGaN QWs used for 220-250nm-band high-brightness UV-LEDs (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: Second International Symposium on Growth of III-Nitrides (ISGN-2)
  • Place of Presentation: Izu
• [Presentation] Extremely high efficiency PL emission from 280nm-band InAlGaN QWs realized by Si-doped layer control (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: Second International Symposium on Growth of III-Nitrides (ISGN-2)
  • Place of Presentation: Izu
• [Presentation] 280nm-band quaternary InAlGaN quantum well deep-UV LEDs with p-InAlGaN layers (2008)
  • Author(s): H. Hirayama, et al,
  • Organizer: International Symposium on Semiconductor Light emitting devices (ISSLED2008)
  • Place of Presentation: Phoenix, USA.
• [Presentation] 280nm帯InAlGaN高出力LED (2008)
  • Author(s): 平山 秀樹, 他3名
  • Organizer: 電子情報通信学会、レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 名古屋工業大学
• [Presentation] 230nm帯AlGaN紫外LEDの高出力化 (2008)
  • Author(s): 平山 秀樹, 他3名
  • Organizer: 電子情報通信学会、レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 名古屋工業大学
• [Presentation] ELO-AlNテンプレート上に作製した270nm帯紫外LED (2008)
  • Author(s): 平山 秀樹, 他5名
  • Organizer: 電子情報通信学会、レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 名古屋工業大学
• [Presentation] 220-280nm帯AlGaN、InAlGaN系紫外LEDの進展 (2008)
  • Author(s): 平山 秀樹
  • Organizer: 文部科学省特定領域研究公開シンポジウム
  • Place of Presentation: 東京
• [Presentation] 264nm紫外AlGaN量子井戸LEDのCW11W出力動作 (2008)
  • Author(s): 平山 秀樹, 他3名
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
• [Presentation] 紫外LED用低貫通転位密度ELO-AlNテンプレートの作製 (2008)
  • Author(s): 平山 秀樹, 他5名
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
• [Presentation] SiモジュレーションドープInAlGaN発光層を用いた280nm帯紫外LEDの10mW出力動作 (2008)
  • Author(s): 平山 秀樹, 他3名
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
• [Presentation] ELO-AlNテンプレート上に作製した270nm帯AlGaN-LEDのCWミリワット出力動作 (2008)
  • Author(s): 平山 秀樹, 他6名
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
• [Presentation] AlN電子ブロック層を用いた230nm帯AlGaN-LEDのCW動作 (2008)
  • Author(s): 平山 秀樹, 他3名
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
• [Presentation] "222-273 nm AIGaN deep ultraviolet light-emitting diodes fabricated on high-quality AIN buffer on sapphire" (2008)
  • Author(s): H. Hirayama, T. Yatabe, N. Noguchi and N. Kamata
  • Organizer: International Symposium on Semiconductor Light emitting devices(ISSLED2008)
  • Place of Presentation: Phoenix, USA
• [Presentation] "280 nm-band quaternary InAIGaN quantum well deep-UV LEDs with p-lnAIGaN layers" (2008)
  • Author(s): S. Fujikawa, T, Takano, K. Tsubaki and H. Hirayama
  • Organizer: International Symposium on Semiconductor Light emitting devices(ISSLED2008)
  • Place of Presentation: Phoenix, USA
• [Presentation] 「InAIGaN4元混晶を用いた280nm帯深紫外LED」 (2008)
  • Author(s): 藤川紗千恵、平山秀樹、高野隆好、椿健治
  • Organizer: 2008春応用物理学会(第65回)
  • Place of Presentation: 日本大学
• [Presentation] 「量産対応型MOCVDによる270nm帯高出力深紫外LEDの検討」 (2008)
  • Author(s): 高野隆好、藤川紗千恵、椿健治、平山秀樹
  • Organizer: 2008春応用物理学会(第65回)
  • Place of Presentation: 日本大学
• [Presentation] 「アンモニアパルス供給多層成長法を用いた深紫外LED用AINバッファーの進展」 (2008)
  • Author(s): 平山秀樹、谷田部透、野口憲路、乗松潤、鎌田憲彦
  • Organizer: 2008春応用物理学会(第65回)
  • Place of Presentation: 日本大学
• [Presentation] 「248nmAIGaN深紫外LEDの室温CWミリワット出力動作」 (2008)
  • Author(s): 谷田部透、平山秀樹、野口憲路、乗松潤、鎌田憲彦
  • Organizer: 2008春応用物理学会(第65回)
  • Place of Presentation: 日本大学
• [Presentation] 「222nmAIGaN深紫外LEDのシングルピーク発光動作」 (2008)
  • Author(s): 野口憲路、平山秀樹、谷田部透、鎌田憲彦
  • Organizer: 2008春応用物理学会(第65回)
  • Place of Presentation: 日本大学
• [Presentation] 「深紫外半導体発光素子およびTHz量子カスケードレーザの開発」 (2007)
  • Author(s): 平山秀樹
  • Organizer: 電気学会、光・量子デバイス研究会
  • Place of Presentation: 九州大学
  • Year and Date: 2007-12-14
• [Presentation] 「p-InAIGaNと高品質AINを用いた340nm帯紫外高出力LED」 (2007)
  • Author(s): 藤川紗千恵、高野隆好、椿健治、平山秀樹
  • Organizer: 応用物理学会・結晶工学分科会研究会
  • Place of Presentation: 学習院創立百周年記念会館
  • Year and Date: 2007-12-14
• [Presentation] 「230-350nm帯InAlGaN系深紫外高効率発光デバイスの研究」 (2007)
  • Author(s): 平山秀樹
  • Organizer: CREST「新機能創成に向けた光・光量子科学技術」領域、平成19年度新規採択課題キックオフミーデイング
  • Place of Presentation: 日本科学未来館
  • Year and Date: 2007-10-27
• [Presentation] "230-350nm窒化物深紫外LEDの進展と今後の展望" (2007)
  • Author(s): 平山秀樹、谷田部 透, 野口憲路, 藤川紗千恵, 高野隆好, 鎌田憲彦, 近藤行廣
  • Organizer: 第68回応用物理学会学術講演回、「窒化物の新展開」特定領域研究企画「窒化物光半導体のフロンティア」-材料潜在能力の極限発現一
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-05
• [Presentation] "Development of Deep-UV and Terahertz Semiconductor Emitting Devices and their Applications" (2007)
  • Author(s): H. Hirayama
  • Organizer: The 13Th International Micromachine/Nanotech Symposium, -MEMS Frontier: Innovative Devices by Micro and Nano-Bio Fusion Create New Lifestyles-,
  • Place of Presentation: Tokyo
  • Year and Date: 2007-07-26
• [Presentation] "227-261 nm AIGaN-based ultraviolet light-emitting diodes fabricated on high-quality AIN buffer on sapphire" (2007)
  • Author(s): H. Hirayama, T. Yatabe, N. Noguchi and N. Kamata
  • Organizer: International Conference on White LEDs and Solid State Lighting (White LEDs-07)
  • Place of Presentation: Tokyo
• [Presentation] "High-quality AIN buffer fabricated on sapphire by NH3 pulsed-flow multi-layer growth method for application to deep-UV LEDs" (2007)
  • Author(s): N. Noguchi, T. Yatabe, T. Ohashi, N. Kamata and H. hirayama
  • Organizer: International Conference on White LEDs and Solid State lighting (White LEDs-07)
  • Place of Presentation: Tokyo
• [Presentation] "Remarkable enhancement of 254-288 nm deep UV emission from AIGaN quantum wells by using high-quality AlN buffer on sapphire" (2007)
  • Author(s): T. Yatabe, N. Noguchi and N. Kamata, and H. Hirayama
  • Organizer: International Conference on White LEDs and Solid State Lighting (White LEDs-07)
  • Place of Presentation: Tokyo
• [Presentation] "Realization of 340 nm band high-power UV-LED using p-type InAlGaN" (2007)
  • Author(s): S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama
  • Organizer: International Conference on White LEDs and Solid State Lighting (White LEDs-07)
  • Place of Presentation: Tokyo
• [Presentation] "231-261 nm AlGaN quantum well deep ultraviolet light-emitting diodes fabricated on high-quality AlN buffer on sapphire" (2007)
  • Author(s): H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi and N. Kamata
  • Organizer: International Symposium on Compound Semiconductors (ISCS2007)
  • Place of Presentation: Kyoto
• [Presentation] "340 nm band high-power (>7mW) InAlGaN quantum well UV-LED using p-type InAlGaN layers" (2007)
  • Author(s): S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama
  • Organizer: International Symposium on Compound Semiconductors (ISCS2007)
  • Place of Presentation: Kyoto
• [Presentation] "Realization of 340 nm-band high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN" (2007)
  • Author(s): S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama
  • Organizer: International Conference on Solid State Devices and Materials (SSDM2007)
  • Place of Presentation: Tsukuba
• [Presentation] "Control of polarity and reduction of threading dislocation density (TDD) of AlN/AlGaN buffer on sapphire by using TMAl pulsed supply method" (2007)
  • Author(s): N. Noguchi, T. Ohashi N. Kamata and H. Hirayama
  • Organizer: International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] "340 nm-band high-power (>7mW) InAlGaN quantum well UV-LED using p-type InAlGaN layers" (2007)
  • Author(s): S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama
  • Organizer: International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] "High-quality AlN buffer fabricated on sapphire by NH3 pulse-flow multi-layer growth method for application to deep UV LEDs" (2007)
  • Author(s): H. Hirayama, T. Ohashi and N. Kamata
  • Organizer: International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] "Remarkable enhancement of 254-280 nm deep UV emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire" (2007)
  • Author(s): T. Yatabe, H. Hirayama, T. Ohashi and N. Kamata
  • Organizer: International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] "Quaternary InAlGaN quantum-dot UV-LED emitting at 335 nmfabricated by an anti-surfactant method" (2007)
  • Author(s): H. Hirayama, S. Fujikawa
  • Organizer: International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] "245-250 nm AlGaN-based deep ultraviolet light-emitting diodes fabricated on high-quality AlN buffer on sapphire" (2007)
  • Author(s): H. Hirayama, T. Ohashi, T. Yatabe and N. Kamata
  • Organizer: International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] "Realization of 340 nm-band high-power InAlGaN-based UV-LED by the suppression of electron overflow" (2007)
  • Author(s): S. Fujikawa, T. Takano, Y. Kondo ahd H. Hirayama
  • Organizer: International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] "Remarkable improvement of output power for InAlGaN based ultraviolet LED by improving the crystal quality of AlN/AlGaN templates" (2007)
  • Author(s): T.Takano, S. Fujikawa, Y. Kondo and H. Hirayama
  • Organizer: International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] "Realization of 340 nm-band high-power UV-LED using p-type InAlGaN" (2007)
  • Author(s): S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama
  • Organizer: 26th Electronic Materials Symposium (EMS-26)
  • Place of Presentation: Laforet Biwako Shiga
• [Presentation] "Remarkable improvement of output power for InAIGaN based UV LED by improving crystal quality of AIN/AIGaN template" (2007)
  • Author(s): T. Takano, S. Fujikawa, Y. Kondo and H. Hirayama
  • Organizer: 26th Electronic Materials Symposium (EMS-26)
  • Place of Presentation: Laforet Biwako, Shiga
• [Presentation] "High-quality AIN buffer fabricated on sapphire by ammonia pulse-flow multi-layer growth method for application to deep UV LEDs" (2007)
  • Author(s): H. Hirayama, T. Ohashi and N. Kamata
  • Organizer: 26th Electronic Materials Symposium (EMS-26)
  • Place of Presentation: Laforet Biwako, Shiga
• [Presentation] "Control of polarity and reduction of threading dislocation density (TDD) of AIN/AIGaN template by using TMAl pulse supply growth" (2007)
  • Author(s): N. Noguchi, T. Ohashi N. Kamata and H. Hirayama
  • Organizer: 26th Electronic Materials Symposium (EMS-26)
  • Place of Presentation: Laforet Biwako, Shiga
• [Presentation] "Remarkable enhancement of 254-280 nm deep UV emission from AIGaN quantum wells by using high-quality AIN buffer on sapphire" (2007)
  • Author(s): T. Yatabe, H. Hirayama, T. Ohashi and N. Kamata
  • Organizer: 26th Electronic Materials Symposium (EMS-26)
  • Place of Presentation: Laforet Biwako, Shiga
• [Presentation] "245-250nm AIGaN-based deep ultraviolet light-emitting diodes fabricated on high-quality AIN buffer on sapphire" (2007)
  • Author(s): H. Hirayama, T. Ohashi, T. Yatabe and N. Kamata
  • Organizer: 26th Electronic Materials Symposium (EMS-26)
  • Place of Presentation: Laforet Biwako, Shiga
• [Presentation] 「p-InAIGaNと高品質AINを用いた340nm帯高出力LED」 (2007)
  • Author(s): 藤川紗千恵、高野隆好、近藤行廣、平山秀樹
  • Organizer: 電子情報通信学会、レーザ・量子エレクトロニクス研究会(LQE)「窒化物半導体光・電子デバイス・材料、及び関連技術」
  • Place of Presentation: 福井大学
• [Presentation] 「深紫外発光InAIGaN4元混晶量子ドットの形成と電流注入発光」 (2007)
  • Author(s): 藤川紗千恵、平山秀樹
  • Organizer: 2007秋応用物理学会(第68回)
  • Place of Presentation: 北海道工業大学
• [Presentation] 「261nmAIGaN量子井戸深紫外LEDのCWミリワット動作」 (2007)
  • Author(s): 谷田部透、野口憲路、鎌田憲彦、平山秀樹
  • Organizer: 2007秋応用物理学会(第68回)
  • Place of Presentation: 北海道工業大学
• [Presentation] 「231nmAIGaN量子井戸深紫外LEDのシングルピーク発光動作」 (2007)
  • Author(s): 野口憲路、谷田部透、鎌田憲彦、平山秀樹
  • Organizer: 2007秋応用物理学会(第68回)
  • Place of Presentation: 北海道工業大学
• [Presentation] 「InAlGaN窒化物4元混晶を用いた紫外LEDの高出力化」 (2007)
  • Author(s): 平山秀樹
  • Organizer: 文部省科研費、特定領域研究、「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」、平成18年度研究成果報告会
  • Place of Presentation: 熱海後楽園ホテル(静岡)
• [Book] 「近接場光のセンシング・イメージ技術への応用」第21章「殺菌・医療用途を目指した深紫外LED光源の開発」 (2010)
  • Author(s): 平山秀樹
  • Total Pages: 5
  • Publisher: CMC出版
• [Book] ファインセラミックスレポート Vol.28, No.4「AlGaN系深紫外LEDの進展」 (2010)
  • Author(s): 平山秀樹
  • Total Pages: 5
  • Publisher: 日本ファインセラミックス協会
• [Book] 光技術コンタクト 48巻8号 特集「紫外光学系の動向」「AlGaN系深紫外LEDの進展と展望」 (2010)
  • Author(s): 平山秀樹
  • Total Pages: 5
  • Publisher: 日本オプトメカトロニクス協会
• [Book] グリーンフォトニクス技術資料集-環境ビジネスと光技術-「230-350nm帯AlGaN系紫外高輝度LEDの進展と応用」 (2010)
  • Author(s): 平山秀樹
  • Total Pages: 9
  • Publisher: オプトロニクス社
• [Book] LED-UV硬化技術と硬化材料の現状と展望「220-350nm帯AlGaN系紫外LEDの進展と今後の展望 (2010)
  • Author(s): 平山秀樹
  • Publisher: CMC出版(In press)
• [Book] 理研環境報告書「深紫外光が導きだす新たなエコ・マーケット」-高品質の結晶を作る数多くのブレークスルーを実現- (2009)
  • Author(s): 平山秀樹
  • Total Pages: 1
  • Publisher: 独立行政法理化学研究所
• [Book] Display「220-280nm帯AlGaN系深紫外LEDの進展」 (2009)
  • Author(s): 平山秀樹
  • Total Pages: 10
  • Publisher: (株)技術情報
• [Book] 光技術コンタクト vol.47, 通巻551, 10月号「最短波長領域・高効率深紫外LEDの開発」 (2009)
  • Author(s): 平山秀樹
  • Total Pages: 1
  • Publisher: (社)日本オプトメカトロニクス協会
• [Book] Modern Wide Bandgap Semiconductores and Related Optoelectronic Devices (2007)
  • Author(s): H.Hirayama et al.
  • Publisher: Springer(印刷中)
• [Book] 平成18年度光技術動向調査 (2007)
  • Author(s): 平山秀樹 他
  • Publisher: 光産業技術振興協会(印刷中)
• [Book] 科学立国日本を築く極限に挑む気鋭の研究者たち (2006)
  • Author(s): 平山秀樹 他
  • Total Pages: 325
  • Publisher: 日刊工業新聞社
• [Book] ワイドギャップ半導体光・電子デバイス (2006)
  • Author(s): 平山秀樹 他
  • Total Pages: 421
  • Publisher: 森北出版(株)
• [Remarks] 受賞
• [Remarks] 第43回市村学術賞功績賞 平山秀樹 「AlGaN系精密結晶成長技術の開拓と深紫外LEDの先駆的研究」、2011年4月
• [Remarks] 第24回日本IBM科学賞エレクトロニクス部門 平山秀樹 「AlGaN系半導体結晶の高品質化と深紫外LEDの先導的開発」、2010年11月
• [Remarks] IWN国際会議ベストポスター賞 M.Akiba, H.Hirayama, Y.Tsukada N.Maeda and N.Kamata "Efficiency Enhancement in AlGaN Deep-UV LEDs using High-Reflectivity Al-based p-type Electrode"、2010年9月
• [Remarks] 新聞その他報道など
• [Remarks] 2007年9月21日、朝日新聞「紫外線発光ダイオード開発」
• [Remarks] 2008年7月7日、日刊工業新聞「殺菌用紫外線LED世界最高出力」
• [Remarks] 2010年2月26日、毎日新聞「殺菌力強いLED、紫外光実用化レベルへ」
• [Remarks] 新聞発表(計11件)
• [Patent(Industrial Property Rights)] 窒化物半導体多重量子構造を有する発光素子及びその製造方法 (2010)
  • Inventor(s): 平山秀樹
  • Industrial Property Rights Holder: 独立行政法人理化学研究所
  • Filing Date: 2010-02-24
• [Patent(Industrial Property Rights)] 光半導体発光素子及びその製造方法 (2010)
  • Inventor(s): 平山秀樹、大橋智昭、鎌田憲彦
  • Industrial Property Rights Holder: 独立行政法人理化学研究所
  • Acquisition Date: 2010-06-25
• [Patent(Industrial Property Rights)] 窒化物半導体多重量子障壁を有する発光素子及びその製造法 (2010)
  • Inventor(s): 平山秀樹
  • Industrial Property Rights Holder: 理研
  • Industrial Property Number: 2010-038912
  • Filing Date: 2010-02-24
• [Patent(Industrial Property Rights)] 光半導体素子及びその製造方法 (2009)
  • Inventor(s): 平山秀樹, 柴田智彦
  • Industrial Property Rights Holder: 独立行政法人理化学研究所, DOWAエレクトロニクス(株)
  • Filing Date: 2009-08-28
  • Overseas
• [Patent(Industrial Property Rights)] 窒化物半導体発光素子 (2009)
  • Inventor(s): 平山秀樹, 藤川紗千恵, 椿健治, 高野隆好
  • Industrial Property Rights Holder: 独立行政法人理化学研究所, パナソニック電工(株)
  • Industrial Property Number: 2009-104407
  • Filing Date: 2009-04-22
• [Patent(Industrial Property Rights)] 窒化物半導体層の製造方法、窒化物半導体発光素子の製造方法および窒化物半導体発光素子 (2009)
  • Inventor(s): 平山秀樹, 藤川紗千恵, 椿健治, 高野隆好
  • Industrial Property Rights Holder: 独立行政法人理化学研究所, パナソニック電工(株)
  • Industrial Property Number: 2009-104408
  • Filing Date: 2009-04-22
• [Patent(Industrial Property Rights)] 発光素子形成用複合基板及びその製造方法 (2008)
  • Inventor(s): 平山秀樹、古内史人
  • Industrial Property Rights Holder: 理化学研究所、宇部興産株式会社
  • Filing Date: 2008-09-04
  • Overseas
• [Patent(Industrial Property Rights)] 発光素子形成用複合基板及びその製造方法 (2008)
  • Inventor(s): 平山秀樹、古内史人
  • Industrial Property Rights Holder: 理化学研究所、宇部興産株式会社
  • Filing Date: 2008-09-03
  • Overseas
• [Patent(Industrial Property Rights)] 1.「光半導体素子及びその製造方法」 (2007)
  • Inventor(s): 平山秀樹、大橋智昭、鎌田憲彦
  • Industrial Property Rights Holder: 平山秀樹、大橋智昭、鎌田憲彦
  • Industrial Property Number: 2007-219890
  • Filing Date: 2007-08-27
• [Patent(Industrial Property Rights)] 2.「半導体発光素子及びその製造方法」 (2007)
  • Inventor(s): 平山秀樹、大橋智昭、鎌田憲彦
  • Industrial Property Rights Holder: 平山秀樹、大橋智昭、鎌田憲彦
  • Industrial Property Number: 2007-219910
  • Filing Date: 2007-08-27