| Project Area | Creation and control of spin current |
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| Project/Area Number |
19048018
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TANAKA Masaaki The University of Tokyo, 大学院・工学系研究科, 教授 (30192636)
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| Co-Investigator(Kenkyū-buntansha) |
OHYA Shinobu 東京大学, 大学院・工学系研究科, 准教授 (20401143)
吉田 博 大阪大学, 産業科学研究所, 教授 (30133929)
佐藤 和則 大阪大学, 産業科学研究所, 助教 (60379097)
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| Co-Investigator(Renkei-kenkyūsha) |
YOSHIDA Hiroshi 大阪大学, 大学院・基礎工学研究科, 教授 (30133929)
SATO Kazunori 大阪大学, 大学院・基礎工学研究科, 准教授 (60379097)
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| Project Period (FY) |
2007 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥50,000,000 (Direct Cost: ¥50,000,000)
Fiscal Year 2010: ¥11,200,000 (Direct Cost: ¥11,200,000)
Fiscal Year 2009: ¥14,000,000 (Direct Cost: ¥14,000,000)
Fiscal Year 2008: ¥13,800,000 (Direct Cost: ¥13,800,000)
Fiscal Year 2007: ¥11,000,000 (Direct Cost: ¥11,000,000)
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| Keywords | スピン流デバイス / 強磁性半導体 / GaMnAs / GeMn / スピン緩和時間 / 共鳴トンネル分光 / スピン依存伝導 / Spin-MOSFET / MnAs / スピン / スピン流 / 磁性半導体 / 不揮発性メモリ / スピントランジスタ / 分子線エピタキシー / ヘテロ構造 / スピン偏極電流 / 磁気抵抗効果 / スピン注入 |
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| Research Abstract |
The objective of this research is to create materials and devices with nonvolatile memory and reconfigurable functions, in particular, spin-polarized-current-controlled devices. By introducing magnetic elements and ferromagnetic materials into semiconductors and device structures, we fabricate new functional materials and devices that use spin degrees of freedom as well as charge transport of carriers, particularly spin-polarized currents. More specifically, we establish the basic material and process technologies of, 1) III-V based heterojunction-type spin transistors, 2) group-IV based MOSFET-type spin devices, and 3) single-electron spin transistors based on ferromagnetic nanoparticles/semiconductor granular materials.
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