| Project Area | Creation and control of spin current |
|---|
| Project/Area Number |
19048029
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Science and Engineering
|
|---|
| Research Institution | National Institute for Materials Science |
|---|
Principal Investigator |
TAKAHASHI Yukiko National Institute for Materials Science, 磁性材料センター, 主幹研究員 (50421392)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
FURUBAYASHI Takao 独立行政法人物質・材料研究機構, 磁性材料センター, 主席研究員 (80354348)
HONO Kazuhiro 独立行政法人物質・材料研究機構, 磁性材料センター, フェロー (60229151)
OHKUBO Tadakatsu 独立行政法人物質・材料研究機構, 磁性材料センター, グループリーダー (00242462)
RAJANIKANTH A. 独立行政法人物質・材料研究機構, 若手国際研究センター, 研究員 (40515590)
|
|---|
| Project Period (FY) |
2007 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥27,400,000 (Direct Cost: ¥27,400,000)
Fiscal Year 2010: ¥5,600,000 (Direct Cost: ¥5,600,000)
Fiscal Year 2009: ¥6,700,000 (Direct Cost: ¥6,700,000)
Fiscal Year 2008: ¥7,100,000 (Direct Cost: ¥7,100,000)
Fiscal Year 2007: ¥8,000,000 (Direct Cost: ¥8,000,000)
|
|---|
| Keywords | 高スピン偏極率材料 / 微細構造 / スピントロニクスデバイス / ハーフメタル / スピン偏極率 / ホイスラー合金 |
|---|
| Research Abstract |
To realize high performance spintronics devices, we studied the relationship between microstructure and transport properties of the spintronics devices using highly spin-polarized materials. By the detail microstructure observation of tunneling magnetoresistance (TMR) and current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices using Co-based Heusler alloys, it was found that high degree of L2_1 order was required in the Co-based Heusler alloy electrodes. In addition, a lattice matching between the electrode and spacer materials should be good to get high degree of L2_1 order.
By using the Valet-Fert model taking into account of the spin diffusion length, we estimated the bulk and interface spin asymmetry in the Co_2FeAlSi/Ag/Co_2FeAlSi CPP-GMR device.
Based on these results, we showed the material guideline to realize high GMR in CPP-GMR devices.
|
