| Budget Amount *help |
¥89,800,000 (Direct Cost: ¥89,800,000)
Fiscal Year 2011: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2010: ¥9,000,000 (Direct Cost: ¥9,000,000)
Fiscal Year 2009: ¥15,200,000 (Direct Cost: ¥15,200,000)
Fiscal Year 2008: ¥26,600,000 (Direct Cost: ¥26,600,000)
Fiscal Year 2007: ¥35,300,000 (Direct Cost: ¥35,300,000)
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| Research Abstract |
New silicon clathrates and related compounds have been developed using high pressure and high temperature (HPHT) conditions. Single crystals of type II silicon clathrate NaxSi136 were obtained, and the structure was successfully determined. New high pressure phases have been developed in binary La-Si and ternary Ca-Al-Si and Mg-Al-Si systems; the structures and superconductivity have been studied. 3D fullerene C_<60> polymers analogous to Si clathrate compounds have been prepared using HPHT conditions. Semiconducting clathrate compounds, in particular type-I Ba_8Ga_<16>Sn_<30> and type-VIII Ba_8Ga_<16>Sn_<30> were prepared, and their high thermoelectric performance was studied in detail.
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