| Project Area | Carbon nanotube nanoelectronics |
|---|
| Project/Area Number |
19054001
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Science and Engineering
|
|---|
| Research Institution | Tohoku University |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
KANEKO Toshiro 東北大学, 大学院・工学研究科, 准教授 (30312599)
TOHJI Kazuyuki 東北大学, 大学院・環境科学研究科, 教授 (10175474)
加藤 俊顕 東北大学, 大学院・工学研究科, 助教 (20502082)
大原 渡 山口大学, 大学院・理工学研究科, 准教授 (80312601)
|
|---|
| Project Period (FY) |
2007 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥88,600,000 (Direct Cost: ¥88,600,000)
Fiscal Year 2011: ¥11,300,000 (Direct Cost: ¥11,300,000)
Fiscal Year 2010: ¥15,100,000 (Direct Cost: ¥15,100,000)
Fiscal Year 2009: ¥16,400,000 (Direct Cost: ¥16,400,000)
Fiscal Year 2008: ¥21,800,000 (Direct Cost: ¥21,800,000)
Fiscal Year 2007: ¥24,000,000 (Direct Cost: ¥24,000,000)
|
|---|
| Keywords | プラズマプロセス / 構造制御配向成長 / 内包ナノチューブ / 電気磁気光機能 / プラズマナノ / プロセス制御 / 孤立垂直配向成長 |
|---|
| Research Abstract |
In order to electrically, magnetically, and optically functionalize single-walled (SWNT) and double-walled (DWNT) carbon nanotubes, methods of diffusion plasma chemical vapor deposition (CVD) and plasma-ion injection were developed, applied, and made the best use of. As a result, we succeeded in the structure-controlled growth of SWNTsuch as narrow-chirality distributed growth, creation of various charge- /spin-exploited atoms and moleculesencapsulated SWNT and DWNT, and universal control of SWNT/DWNT semiconducting properties. Moreover, we demonstrated the principles of novel surrounding-stable nanodevices such as high-performance nagative differential resistance element, ultimate pn-junction diode, semiconductor-magnetism fusion element, electrooptic fusion (optoelectronic switch, photoelectric conversion) element, and n-type thin film transistor.
|
