| Budget Amount *help |
¥118,800,000 (Direct Cost: ¥118,800,000)
Fiscal Year 2011: ¥6,600,000 (Direct Cost: ¥6,600,000)
Fiscal Year 2010: ¥6,100,000 (Direct Cost: ¥6,100,000)
Fiscal Year 2009: ¥47,100,000 (Direct Cost: ¥47,100,000)
Fiscal Year 2008: ¥30,800,000 (Direct Cost: ¥30,800,000)
Fiscal Year 2007: ¥28,200,000 (Direct Cost: ¥28,200,000)
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| Research Abstract |
Electroluminescence and photovoltaic effects in the pn junction diodes fabricated by using field-effect doping have been confirmed. The devices showed drain current modulation indicating successful operation of the optoelectronic devices. CNT-TFT integrated circuits consisting of 108 CNT-TFTs fabricated using CNTs grown by PCVD which has the advantage of preferential growth of the CNTs with semiconducting behavior in the FET I-V characteristics have successfully been fabricated with a switching speed of 0.51 μs/gate. The integration scale and switching speed are the best, to our knowledge, among the nanocarbon devices. The effects of the defects in the CNTs on the transistors and existence of the island structure in the CNT network channel were also clarified using scanning probe microscopy.
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