| Budget Amount *help |
¥121,680,000 (Direct Cost: ¥93,600,000、Indirect Cost: ¥28,080,000)
Fiscal Year 2017: ¥13,780,000 (Direct Cost: ¥10,600,000、Indirect Cost: ¥3,180,000)
Fiscal Year 2016: ¥27,820,000 (Direct Cost: ¥21,400,000、Indirect Cost: ¥6,420,000)
Fiscal Year 2015: ¥21,970,000 (Direct Cost: ¥16,900,000、Indirect Cost: ¥5,070,000)
Fiscal Year 2014: ¥21,710,000 (Direct Cost: ¥16,700,000、Indirect Cost: ¥5,010,000)
Fiscal Year 2013: ¥36,400,000 (Direct Cost: ¥28,000,000、Indirect Cost: ¥8,400,000)
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| Outline of Final Research Achievements |
In this study, we fabricated “Nano-layers”, which are thin films controlled in the thickness at the atomic level. We searched for new materials functions, and worked on the development of Nanostructure information by providing the nano-layers to other groups. The major results are listed below. [1] We successfully enhanced the thermoelectric power factor of oxide-based superlattices double compared with the bulk. [2] We clarified the origin of carrier mobility suppression of a transparent oxide semiconductor and successfully realized high carrier mobility. [3] We found that two-dimensional electron gas in semiconductor shows high thermoelectric power factor. [4] We realized thin-film devices, which can switch their optical transmission, electrical resistivity, and magnetic properties simultaneously. [5] We realized iron-based superconducting films on the metallic tapes, which showed high critical current density suitable as practical applications.
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