| Budget Amount *help |
¥204,230,000 (Direct Cost: ¥157,100,000、Indirect Cost: ¥47,130,000)
Fiscal Year 2017: ¥23,530,000 (Direct Cost: ¥18,100,000、Indirect Cost: ¥5,430,000)
Fiscal Year 2016: ¥36,400,000 (Direct Cost: ¥28,000,000、Indirect Cost: ¥8,400,000)
Fiscal Year 2015: ¥70,330,000 (Direct Cost: ¥54,100,000、Indirect Cost: ¥16,230,000)
Fiscal Year 2014: ¥29,250,000 (Direct Cost: ¥22,500,000、Indirect Cost: ¥6,750,000)
Fiscal Year 2013: ¥44,720,000 (Direct Cost: ¥34,400,000、Indirect Cost: ¥10,320,000)
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| Outline of Final Research Achievements |
In the research of atomic layers for Scientific Research on Innovative Areas, (1) the transport properties of 2 dimensional layered semiconductors, (2) fabrication technique for the layered heterostructure, and its transport properties and (3) application to the OLED were studied. Compared with the conventional heteroepitaxy, layered heterostructure can be fabricated without considering the lattice mismatch. The layered heterointerface is proved to be electrically inert. Further development can be expected.
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