Research on SOI 3D pixel process

• Project Area: Interdisciplinary research on quantum imaging opened with 3D semiconductor detector
• Project/Area Number: 25109002
• Research Category: Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: High Energy Accelerator Research Organization
• Principal Investigator: 新井 康夫 大学共同利用機関法人高エネルギー加速器研究機構, 素粒子原子核研究所, 教授 (90167990)
• Co-Investigator(Kenkyū-buntansha): 倉知 郁生 大学共同利用機関法人高エネルギー加速器研究機構, 先端加速器推進部, 特別教授 (00533944) ; 三好 敏喜 大学共同利用機関法人高エネルギー加速器研究機構, 素粒子原子核研究所, 研究機関講師 (20470015) ; 井田 次郎 金沢工業大学, 工学部, 教授 (60506450)
• Project Period (FY): 2013-06-28 – 2018-03-31
• Project Status: Granted (Fiscal Year 2017)
• Budget Amount: ¥286,130,000 (Direct Cost: ¥220,100,000、Indirect Cost: ¥66,030,000); Fiscal Year 2017: ¥60,190,000 (Direct Cost: ¥46,300,000、Indirect Cost: ¥13,890,000); Fiscal Year 2016: ¥60,190,000 (Direct Cost: ¥46,300,000、Indirect Cost: ¥13,890,000); Fiscal Year 2015: ¥60,190,000 (Direct Cost: ¥46,300,000、Indirect Cost: ¥13,890,000); Fiscal Year 2014: ¥63,440,000 (Direct Cost: ¥48,800,000、Indirect Cost: ¥14,640,000); Fiscal Year 2013: ¥42,120,000 (Direct Cost: ¥32,400,000、Indirect Cost: ¥9,720,000)
• Keywords: 半導体 / Silicon On Insulator / 放射線センサー / 先端機能デバイス / 微細加工プロセス / 放射線センサ

Outline of Annual Research Achievements

第4回目の相乗りプロセス(MultiProject Wafer :　MPW）ランを6月に行い、計画研究班及び公募研究班からの２５種の設計が持ち寄られ、プロセスを行った。完成したチップは、それぞれの要望に応じてウエハ、ベアチップ、パッケージチップの形で配布した。
これまでのSOI検出器よりも放射線耐性、クロストークを減らした、Double SOIウエハを用いた設計が増えた。また、中国高能研との初めての共同開発検出器として計数型センサCNPIX1も設計した。
検出器性能は試作毎に向上しており、京都大を中心に開発したXRPIX検出器では、遂に当初目標である１０電子のノイズレベルを達成した。また、素粒子実験用崩壊点検出器FPIX2では、陽子ビームを用いた実験で世界で初めて1umを切る分解能を示した。金沢工業大学ではSOIの特性を生かしたSuper Steep Transistor(SST)の研究が進み、各種国際会議での発表が行われた。２種類のチップを積層した３次元チップに関しては、CAD設計環境の整備が進み、複雑なチップの積層設計が行えるようになった。
2016年6月には北海道大学で、また11月にはSpring-8において国内研究会を開催し、それぞれ約６０名の参加があり、多くの研究発表と活発な議論が行われた。また８月には３回目となるSOI検出器の設計講習会をKEKにおいて開催した。今回は、内容のレベルをやや上げ、設計経験のある人を主な対象とした為、昨年度よりは参加者数は減ったが、それでも約1０名の参加があり、技術の取得とともに、親交を深めた。

Current Status of Research Progress

2: Research has progressed on the whole more than it was originally planned.

Reason

各研究班からの設計を集めてチップの製作を行う相乗りプロセス(MPW)を順調に行う事ができている。
特に新たに開発したDouble SOI技術を用いた設計が広がり、放射線耐性やノイズ性能において向上が見られた。
また高密度化を狙った３次元積層チップ、検出器感度を上げる為のSuper Steep Transistorの開発等も順調に研究が進んでいる。
これらの結果、本研究班が中心となって進めているSOIプロセスを用いて製造した他の研究班の検出器も格段の性能向上が見られるようになって来た。
また設計講習会には、検出器設計に加わる若手研究者が多数参加し、活動の幅が広がっている。

Strategy for Future Research Activity

次年度は領域研究の最終年度であることから、これまでの開発成果をまとめ、今後将来に渡りSOIプロセスを使いやすいものにするための努力を行って行く。平成２９年度も設計のノウハウや性能向上の為の講習会を開催し、若手研究者の技術力の向上を図っていく。
さらに、SSTトランジスタや３次元積層技術、放射線耐性の向上、集積回路の高密度化等の新しい課題にチャレンジし、SOI検出器の新たな可能性を広げていく。
平成29年12月には沖縄でSOI検出器に関する国際会議を開催する予定なので、これに向け研究成果をまとめていく。

Research Products

• [Int'l Joint Research] Institute of High Energy Physics(中国)
• [Int'l Joint Research] AGH-University of Science and Technology/Institute of Nuclear Physics, Krakow(ポーランド)
• [Int'l Joint Research] Institute of High Energy Physics(中国)
• [Int'l Joint Research] AGH University, Krakow/Institute of Nuclear Physics, Krakow(ポーランド)
• [Journal Article] SOI Monolithic Pixel Detector Technology (2017)
  • Author(s): Y. Arai
  • Journal Title: Proceedings of Science Volume: -
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Tradeoff Between Low-Power Operation and Radiation Hardness of Fully Depleted SOI pMOSFET by Changing LDD Conditions (2016)
  • Author(s): Ikuo Kurachi, Kazuo Kobayashi, Marie Mochizuki, Masao Okihara, Hiroki Kasai,Takaki Hatsui, Kazuhiko Hara, Toshinobu Miyoshi, and Yasuo Arai
  • Journal Title: IEEE Transactions on Electron Devices Volume: 63 Pages: 2293-2298
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Development of an X-ray Imaging system with SOI Pixel Detectors (2016)
  • Author(s): Ryutaro NISHIMURA, Yasuo ARAI, Toshinobu MIYOSHI, Keiichi HIRANO, Shunji KISHIMOTO, Ryo HASHIMOTO
  • Journal Title: Nuclear Instruments and Methods in Physics Research A Volume: 831 Pages: 49-54
  • DOI: 10.1016/j.nima.2016.04.036
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Development of a pixel sensor with fine space-time resolution based on SOI technology for the ILC vertex detector (2016)
  • Author(s): T. Miyoshi et al.
  • Journal Title: Nuclear Instruments and Methods in Physics Research Section A Volume: 824 Pages: 439-442
  • DOI: 10.1016/j.nima.2015.11.109
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Super Steep Subthreshold Slope PN-Body Tied SOI FET’s of Ultra Low Drain Voltage=0.1V with Body Bias below 1.0V (2016)
  • Author(s): Takahiro Yoshida, Jiro Ida, Takashi Horii, Masao Okihara and Yasuo Arai
  • Journal Title: Proceedings of IEEE SOI-3D-Subtreshold Microelectronics Unified Conference Volume: - Pages: 1-3
  • Peer Reviewed
• [Journal Article] Compensation for radiation damage of SOI pixel detector via tunneling (2016)
  • Author(s): M. Yamada, Y. Arai, Y. Fujita, R. Hamasaki, Y. Ikegami, I. Kurachi, R. Nishimura, K. Tauchi and T. Tsuboyama
  • Journal Title: Nuclear Instruments and Methods in Physics Research Section A Volume: 印刷中 Pages: 309314-309314
  • DOI: 10.1016/j.nima.2016.04.110
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] First results of a Double-SOI pixel chip for X-ray imaging (2016)
  • Author(s): Yunpeng Lu, Qun Ouyang, Yasuo Arai, Yi Liu, Zhigang Wu, Yang Zhou
  • Journal Title: Nuclear Instruments and Methods in Physics Research A Volume: 印刷中
  • DOI: 10.1016/j.nima.2016.04.022
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Tradeoff Between Low-Power Operation and Radiation Hardness of Fully Depleted SOI pMOSFET by Changing LDD Conditions (2016)
  • Author(s): Ikuo Kurachi, Kazuo Kobayashi, Marie Mochizuki, Masao Okihara, Hiroki Kasai, Takaki Hatsui, Kazuhiko Hara,Toshinobu Miyoshi, and Yasuo Arai
  • Journal Title: IEEE Transactions on Electron Devices Volume: 印刷中 Pages: 2293-2298
  • DOI: 10.1109/ted.2016.2552486
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1V (2015)
  • Author(s): Jiro Ida, Takayuki Mori, Yousuke Kuramoto, Takashi Horii, Takahiro Yoshida, Kazuma Takeda, Hiroki Kasai, Masao Okihara, Yasuo Arai
  • Journal Title: IEEE International Electron Devices Meeting (IEDM) Volume: 15800967
  • DOI: 10.1109/iedm.2015.7409761
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] 3D integration technology for sensor application using less than 5μm-pitch gold cone-bump connection (2015)
  • Author(s): M.Motoyoshi, T.Miyoshi, M.Ikebe and Y.Arai
  • Journal Title: Journal of Instrumentation Volume: 10 Pages: 1-8
  • DOI: 10.1088/1748-0221/10/03/c03004
  • Peer Reviewed / Open Access
• [Journal Article] Investigation of charge-collection efficiency of Kyoto's X-ray astronomical SOI pixel sensors (2014)
  • Author(s): Matsumura, Hideaki; Tsuru, Takeshi Go; Tanaka, Takaaki; Nakashima, Shinya; Ryu, Syukyo G.; Takeda, Ayaki; Arai, Yasuo; Miyoshi, Toshinobu
  • Journal Title: Nuclear Instruments and Methods in Physics Research A Volume: 765 Pages: 183-186
  • DOI: 10.1016/j.nima.2014.05.025
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Synthetizable digital library created to facilitate design of SOI detectors in 200 nm SOI technology (2014)
  • Author(s): S. Glab, M. Baszczyk, P. Dorosz, M. Idzik, W. Kucewicz, M. Sapor, Y. Arai, T. Miyoshi, P. Kapusta, A. Takeda
  • Journal Title: Signals and Electronic Systems (ICSES) Volume: 14719338 Pages: 1-4
  • DOI: 10.1109/icses.2014.6948729
  • Peer Reviewed / Open Access
• [Journal Article] Total Ionization Damage Compensations in Double Silicon-on-Insulator Pixel Sensors (2014)
  • Author(s): S. HONDA, K. HARA, K. TSUCHIDA, M. ASANO, N. TOBITA, T. MAEDA, Y. ARAI, T. MIYOSHI, et al.
  • Journal Title: Proceedings of Science Volume: TIPP2014 Pages: 1-8
  • Peer Reviewed / Open Access
• [Journal Article] SOI Monolithic Pixel Detector (2014)
  • Author(s): Toshinobu Miyoshi, M.I. Ahmed, Yasuo Arai, Yowichi Fujita, Yukiko, Ikemoto, Ayaki Takeda, and Kazuya Tauchi
  • Journal Title: J. of Instrumentation Volume: 9 Pages: 1-8
  • DOI: 10.1088/1748-0221/9/05/c05044
  • Peer Reviewed / Open Access
• [Journal Article] Monolithic pixel detectors with 0.2 um FD-SOI pixel process technology (2013)
  • Author(s): T. Miyoshi, Y. Arai, et al.
  • Journal Title: Nucl. Instr. and Meth. A Volume: 732 Pages: 530-534
  • DOI: 10.1016/j.nima.2013.06.029
  • Peer Reviewed / Open Access
• [Journal Article] Application of 3D stacking technology to SOI radiation image sensor (2013)
  • Author(s): Y. Arai and M. Motoyoshi
  • Journal Title: Proceedings of IEEE Electrical Design of Advanced Packaging & Systems (EDAPS) Volume: ISBN: 978-1-4799-2312-0 Pages: 5-8
• [Journal Article] Measurement results of DIPIX pixel sensor developed in SOI technology (2013)
  • Author(s): M. I. Ahmed, Y. Arai, T. Miyoshi, et al.
  • Journal Title: Nucl. Instr. and Meth. A Volume: 718 Pages: 274-278
  • DOI: 10.1016/j.nima.2012.10.099
  • Peer Reviewed / Open Access
• [Journal Article] Mechanism of Super Steep Subthreshold Slope Characteristics with Body-Tied SOI MOSFET (2013)
  • Author(s): Takayuki Mori, Jiro Ida
  • Journal Title: Proceedings of SISPAD Conference Volume: 1 Pages: 101-104
  • DOI: 10.1109/sispad.2013.6650584
  • Peer Reviewed / Open Access
• [Journal Article] Possibility of SOI Based Super Steep Subthreshold Slope MOSFETＳfor Ultra Low Voltage Application (2013)
  • Author(s): Takayuki Mori and Jiro Ida
  • Journal Title: Proceedings of S3S Conference Volume: 1 Pages: 1-2
  • DOI: 10.1109/s3s.2013.6716550
  • Peer Reviewed / Open Access
• [Presentation] SOI ピクセルディテクタ用新型DAQシステムの開発現況について (2017)
  • Author(s): 西村 龍太郎, 新井 康夫, 三好 敏喜, 平野 馨一, 岸本 俊二, 橋本 亮
  • Organizer: 日本物理学会
  • Place of Presentation: 大阪大学豊中キャンパス（大阪府・豊中市）
  • Year and Date: 2017-03-17
• [Presentation] CP 法による SOI 裏面界面準位密度の評価 (2017)
  • Author(s): 武田 和馬,井田 次郎, 林 拓郎，細野 竜太郎, 新井康夫
  • Organizer: 応用物理学会
  • Place of Presentation: パシフィコ横浜（神奈川県・横浜市）
  • Year and Date: 2017-03-16
• [Presentation] SOI Monolithic Pixel Detector Technology (2016)
  • Author(s): Yasuo Arai
  • Organizer: International workshop on vertex detectors
  • Place of Presentation: Isola d'Elba, Italy
  • Year and Date: 2016-09-25
  • Int'l Joint Research / Invited
• [Presentation] SOI ピクセルディテクタを用いた放射光用X線計測システムの現況について (2016)
  • Author(s): 西村 龍太郎, 新井 康夫, 三好 敏喜, 平野 馨一, 岸本 俊二, 橋本 亮
  • Organizer: 日本物理学会
  • Place of Presentation: 金沢大学（石川県・金沢市）
  • Year and Date: 2016-09-13
• [Presentation] Confirmation of SS=35μV/dec over 3 Decades of Drain Current and Hole Accumulation Effect on PN-Body Tied SOI Super Steep SS FET’s (2016)
  • Author(s): Takashi Horii, Jiro Ida, Takahiro Yoshida, Masao Okihara and Yasuo Arai
  • Organizer: IEEE SILICON NANOELECTRONICS WORKSHOP 2016
  • Place of Presentation: Honolulu, USA
  • Year and Date: 2016-06-12
  • Int'l Joint Research
• [Presentation] チャージポンピング法によるSOIデバイスの埋め込み酸化膜裏面界面の評価 (2016)
  • Author(s): (2)瀧久幸
  • Organizer: 電子デバイス界面テクノロジー研究会
  • Place of Presentation: 東レ総合研修センタ-( 静岡県三島市)
  • Year and Date: 2016-01-21
• [Presentation] Development of SOI Pixel Detectors and their Applications (2016)
  • Author(s): Yasuo Arai
  • Organizer: International symposium on radiation instruments and users (ISRD) 2016
  • Place of Presentation: 高エネルギー加速器研究機構（ 茨城県つくば市）
  • Year and Date: 2016-01-18
  • Int'l Joint Research / Invited
• [Presentation] Super Steep Subthreshold Slope PN-Body Tied SOI FET with Ultra Low Drain Voltage down to 0.1V (2015)
  • Author(s): Jiro Ida
  • Organizer: IEEE International Electron Devices Meeting (IEDM)
  • Place of Presentation: Washington, D.C.(USA)
  • Year and Date: 2015-12-07
  • Int'l Joint Research
• [Presentation] Development of a particle and radiation detector using the Silicon-On-Insulator technology (2015)
  • Author(s): Yasuo Arai
  • Organizer: 6th International Workshop on Electrostatic Storage Device
  • Place of Presentation: 理研（ 埼玉県和光市）
  • Year and Date: 2015-06-10
  • Int'l Joint Research / Invited
• [Presentation] Introduction of SOI Pixel (2015)
  • Author(s): Yasuo Arai
  • Organizer: International Workshop on SOI Pixel Detector (SOIPIX2015)
  • Place of Presentation: 片平さくらホール（ 宮城県仙台市）
  • Year and Date: 2015-06-03
  • Int'l Joint Research
• [Presentation] Radiation image sensor with Silicon-On-Insulator technology (2015)
  • Author(s): Y. Arai
  • Organizer: National Symposium on Particles, Detectors and Instrumentation
  • Place of Presentation: Madurai, India
  • Year and Date: 2015-03-28 – 2015-03-31
  • Invited
• [Presentation] Radiation image sensor with SOI technology (2014)
  • Author(s): Y. Arai
  • Organizer: 2nd Asian Image Sensors and Imaging Systems Symposium
  • Place of Presentation: 東京
  • Year and Date: 2014-12-01 – 2014-12-02
  • Invited
• [Presentation] SOI技術を用いた放射線イメージング半導体検出器の開発 (2014)
  • Author(s): 新井康夫
  • Organizer: 次世代画像入力ビジョンシステム部会定例会
  • Place of Presentation: 東京理科大学
  • Year and Date: 2014-11-17
  • Invited
• [Presentation] Front End Electronics for SOI Monolithic Pixel Sensor (2014)
  • Author(s): T. Miyoshi
  • Organizer: Topical Workshop on Electronics for Particle Physics
  • Place of Presentation: Aix en Provence, France
  • Year and Date: 2014-09-22 – 2014-09-26
• [Presentation] トンネリング現象を利用したSOIデバイスの放射線損傷回復 (2014)
  • Author(s): 山田美帆
  • Organizer: 日本物理学会
  • Place of Presentation: 佐賀大学
  • Year and Date: 2014-09-21
• [Presentation] Lapis SOI Technology and Activities (2014)
  • Author(s): Y. Arai
  • Organizer: Workshop on Active CMOS Pixel Sensors for Particle Tracking (CPIX14)
  • Place of Presentation: Bonn, Germany
  • Year and Date: 2014-09-15 – 2014-09-17
  • Invited
• [Presentation] Research Status of Super Steep Cut off Devices and Possibility of it by SOI Based Devices for Ultra Low Power Applications (2014)
  • Author(s): J. Ida
  • Organizer: 2014 CMOS Emerging Technologies Workshop
  • Place of Presentation: Grenoble, France
  • Year and Date: 2014-06-06 – 2014-06-08
  • Invited
• [Presentation] Innovative pixel sensors with an SOI technology (2014)
  • Author(s): Y. Arai
  • Organizer: 日本物理学会、Japan-Korea Joint Symposium
  • Place of Presentation: 東海大学
  • Year and Date: 2014-03-27 – 2014-03-30
  • Invited
• [Presentation] 極低ドレイン電圧で急峻なサブスレッショルド特性を持つPNボディコンタクト付きSOI MOSFETの提案 (2014)
  • Author(s): 森 貴之、田篠 奏、井田 次郎
  • Organizer: 応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学
  • Year and Date: 2014-03-17 – 2014-03-20
• [Presentation] Application of 3D stacking technology to SOI radiation image sensor (2013)
  • Author(s): Y. Arai
  • Organizer: IEEE Electrical Design of Advanced Packaging & Systems (EDAPS)
  • Place of Presentation: Todaiji, Nara, Japan
  • Year and Date: 2013-12-12 – 2013-12-15
  • Invited
• [Presentation] Evaluation Test of SOI Monolithic Pixel Detectors with High-Speed Readout Electronics (2013)
  • Author(s): T. Miyoshi
  • Organizer: IEEE Nuclear Science Symposium
  • Place of Presentation: Seoul Korea
  • Year and Date: 2013-10-27 – 2013-11-02
• [Book] Radiation Imaging Detectors Using Soi Technology (2017)
  • Author(s): Y. Arai and I. Kurachi
  • Total Pages: 71
  • Publisher: Morgan & Claypool Publisher
• [Book] Radiation Imaging Detectors Using Soi Technology (2016)
  • Author(s): Y. Arai, Renato Turchetta(Editor)
  • Total Pages: 306
  • Publisher: CRC Press
• [Remarks] ３次元半導体検出器で切り拓く新たな量子イメージングの展開
  • URL: http://soipix.jp/index.html
• [Remarks] SOI Pixel Detector R&D
  • URL: http://rd.kek.jp/project/soi/
• [Remarks] 井田 次郎研究室 - 金沢工業大学 工学部 電気電子工学科
  • URL: http://j-ida.kit.labos.ac/ja
• [Patent(Industrial Property Rights)] RADIATION-DAMAGE-COMPENSATION-CIRCUIT AND SOI-MOSFET (2016)
  • Inventor(s): 倉知郁生、新井康夫、山田美帆
  • Industrial Property Rights Holder: 倉知郁生、新井康夫、山田美帆
  • Industrial Property Rights Type: 特許
  • Filing Date: 2016-10-06
  • Application Year: 2016
  • Overseas
• [Patent(Industrial Property Rights)] Semiconductor Device and Method for Manufacturing Semiconductor Device (2016)
  • Inventor(s): 新井康夫、葛西大樹、沖原将生
  • Industrial Property Rights Holder: 新井康夫、葛西大樹、沖原将生
  • Industrial Property Rights Type: 特許
  • Filing Date: 2016-06-30
  • Application Year: 2016
  • Overseas
• [Patent(Industrial Property Rights)] 半導体装置およびその製造方法 (2014)
  • Inventor(s): 葛西大樹、新井康夫
  • Industrial Property Rights Holder: 葛西大樹、新井康夫
  • Industrial Property Rights Type: 特許
  • Filing Date: 2014-07-24
  • Application Year: 2014
  • Acquisition Date: 2017-03-17
  • Acquisition Year: 2017
• [Funded Workshop] International Workshop on SOI Pixel Detector (2015)
  • Place of Presentation: 片平さくらホール（ 宮城県仙台市）
  • Year and Date: 2015-06-03