| Budget Amount *help |
¥83,720,000 (Direct Cost: ¥64,400,000、Indirect Cost: ¥19,320,000)
Fiscal Year 2018: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2017: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2016: ¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2015: ¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
Fiscal Year 2014: ¥26,780,000 (Direct Cost: ¥20,600,000、Indirect Cost: ¥6,180,000)
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| Outline of Final Research Achievements |
Controls of impurity doping, electronic states of interfaces and surfaces are always significant problems for development of high performance semiconductor devices. Observation of atomic scale structures of particular sites governing their electrical properties is significant. In this project, photoelectron holography was employed as a main analytical method, and it was applied to silicon (Si), wide band gap semiconductors and layered material semiconductors. 3D structures of arsenic (As) doped in Si, electrically active subsitutional As atoms and electrically inactive clustered As atoms, and additive atoms incorporated at the interface of SiC and dielectric film were successfully evaluated. Particular electronic states of MoS2 films were also revealed.
Improvement of both sensitivity and energy resolution in the photoelectron holography technique realized analyses of impurity doped in semiconductors. New contributions to development of semiconductor technologies are expected.
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