液滴エピタキシー法による半導体量子ドットレーザーの作製及びその光物性と電子状態

• Project/Area Number: 00J09187
• Research Category: Grant-in-Aid for JSPS Fellows
• Allocation Type: Single-year Grants
• Section: 国内
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokyo
• Principal Investigator: 間野 高明
• Project Period (FY): 2000 – 2001
• Project Status: Completed (Fiscal Year 2001)
• Budget Amount: ¥2,000,000 (Direct Cost: ¥2,000,000); Fiscal Year 2001: ¥1,000,000 (Direct Cost: ¥1,000,000); Fiscal Year 2000: ¥1,000,000 (Direct Cost: ¥1,000,000)