| Project/Area Number |
01044005
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| Research Category |
Grant-in-Aid for international Scientific Research
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| Allocation Type | Single-year Grants |
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| Section | Joint Research |
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| Research Institution | Hokkaido University |
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Principal Investigator |
UOSAKI Kohei Department of Chemistry, Faculty of Science, Hokkaido University, 理学部, 教授 (20133697)
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| Co-Investigator(Kenkyū-buntansha) |
ERIKSSON Stuve Department of Physical Chemistry, Goteborg University, 理学部, 研究員
CARLSSON Per Department of Physical Chemistry, Goteborg University, 理学部, 研究員
HOLMSTROM Bertil Department of Physical Chemistry, Goteborg University, 理学部, 準教授
SHIMAZU Katsuaki Department of Chemistry, Faculty of Science, Hokkaido University, 理学部, 助教授 (30109417)
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| Project Period (FY) |
1989 – 1990
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| Project Status |
Completed (Fiscal Year 1990)
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| Budget Amount *help |
¥6,000,000 (Direct Cost: ¥6,000,000)
Fiscal Year 1990: ¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 1989: ¥3,000,000 (Direct Cost: ¥3,000,000)
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| Keywords | Semiconductor / Laser Spot Scanning Microscope / Scanning Tunneling Microscope / Photoelectrochemistry / Photoanodic Dissolution |
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| Research Abstract |
1. Development of Laser Spot Scanning Microscope (LSSM).
Novel LSSM system for in-situ measurements has been developed. In order to improve the efficiency of the measurements, two personal computers are used in the system. Control of the system and data collection are carried out by a 8-bit machine and data are transferred and analyzed by a 32-bit machine. This system was applied to study the photo electrochemical processes at semiconductor/electrolyte interfaces. Theoretical analysis of the system was also carried out and effect of diffusion length of minority carrier in the semiconductor and rate constant at semiconductor electrode surface on resolution of the microscope were determined.
2. Development of Scanning Tunneling Microscope (STM).
Commercially available STM was converted to an in-situ, electrochemical STM system which can monitor and record the surface morphology change of metal and semiconductor electrodes with nm resolution. Cu deposition on Pt, photoanodic dissolution of semiconductor and surface structure change caused bypotential cycles were investigated. As an application of STM, nosel technique called tip current voltammetry (TCV) was proposed to study potential distribution at semiconducter electrolyte interfaces. Usefulness of this method was demonstrated at p-GaP and n-GaAs electrodes.
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