| Project/Area Number |
01044008
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| Research Category |
Grant-in-Aid for international Scientific Research
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| Allocation Type | Single-year Grants |
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| Section | Joint Research |
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| Research Institution | Hokkaido University |
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Principal Investigator |
KAWASAKI Masahiro Research Institute of Applied Electricity, Hokkaido University, 応用電気研究所, 教授 (70110723)
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| Co-Investigator(Kenkyū-buntansha) |
DAS Puspendu K. Dept. of Inorganic and Physical Chemistry, Indian Institute of Science, 講師
HASHIMOTO Satoshi Research Institute of Applied Electricity, Hokkaido University, 応用電気研究所, 助手 (60164787)
KIM Hong Lae Brookhaven National Laboratory, 研究員
OKABE Hideo Dept. of Chemistry, Haward University, 化学科, 教授
BERSOHN Richard Dept. of Chemistry, Columbia University, 化学科, 教授
MATSUMI Yutaka Research Institute of Applied Electricity, Hokkaido University, 応用電気研究所, 助教授 (30209605)
SATYAPAL Sunita Dept. of Chemistry, Columbia University
TOYOSHIMA Isamu Research Center for Catalysis, Hokkaido University
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| Project Period (FY) |
1989 – 1990
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| Project Status |
Completed (Fiscal Year 1990)
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| Budget Amount *help |
¥6,000,000 (Direct Cost: ¥6,000,000)
Fiscal Year 1990: ¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 1989: ¥3,000,000 (Direct Cost: ¥3,000,000)
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| Keywords | Photoelectron / Spectroscopy / Gallium / Photodissociaiton / Hydrogen / Vacuum uv / Chloride / Multiphoton |
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| Research Abstract |
Pyrolytic and photolytic dissociation of trimethylgallium on Si, Au, and Al substrates was studied by X-ray and UV photoelectron spectroscopy technique. On an Si (111) substrate, gallium metal and CH_n radicals are deposited by pyrolytic dissociation up to 670 K. On a polycrystalline Au substrate, gallium metal was observed while Cls signal disappeared at 470 K. Photodissociation of monolayered Ga(CH_3)_2 at 266 nm gives XPS spectra for CH_n radicals and Ga metal on the Si wafer while at 355 nm no decomposition was observing.
Laser irradiation at 193 or 351 nm of a multilayer of Cl_2 or CH_3Cl on an Si wafer at 100 K leads to both photodissociation of these molecules and formation of photoetching products. The kinetic energy distributions of photofragments (Cl, CH_3) and etching products (SiCl, SiCiC_2) were measured. The kinetic energy distribution of Cl or CH_3 is bimodal for the case of thin deposition of parent molecules on substrates.
The Doppler profiles of the hydrogen atom photo fragments from the photodissociation of HCl and HBr at vacuum UV region are observed to determine the symmetries of the higher electronic states by using a resonance enhanced multiphoton ionization technique.
Alkyl chlorides (R = CH_3, C_2H_5, C_3H_7, and C_4H_9), chloromethanes (CH_nCl_<4-n>), and chlorofluoromethanes (CF_nCl_<4-n>) are photodissociated at vacuum UV region. The chlorine atom photo fragments are detected by a resonance-enhanced multiphoton ionization technique. The symmetries of the electronic states are determined from angular distributions of photofragments.
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