| Project/Area Number |
01430003
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| Research Category |
Grant-in-Aid for General Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
構造化学
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| Research Institution | Hokkaido University |
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Principal Investigator |
KAWASAKI Masahiro Hokkaido Univ., Res. Inst. of Appl. Elect., Professor, 応用電気研究所, 教授 (70110723)
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| Co-Investigator(Kenkyū-buntansha) |
正源 聡 北海道大学, 応用電気研究所, 教務職員 (50216157)
MATSUMI Yutaka Hokkaido Univ., Res, Inst, of Appl. Elect., Associate Professor, 応用電気研究所, 助教授 (30209605)
SHOGEN Satoshi Hokkaido Univ., Res, Inst, of Appl. Elect., Technical Stuff
橋本 訓 北海道大学, 応用電気研究所, 助手 (60164787)
豊島 勇 北海道大学, 触媒研究センター, 教授 (80001709)
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| Project Period (FY) |
1989 – 1991
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| Project Status |
Completed (Fiscal Year 1991)
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| Budget Amount *help |
¥16,000,000 (Direct Cost: ¥16,000,000)
Fiscal Year 1991: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1990: ¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 1989: ¥11,000,000 (Direct Cost: ¥11,000,000)
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| Keywords | Organometallics / Semiconductor / Laser / Kinetic energy / Photofragment / Photoelectron / Monolayer / Time-of-flight / ジメチルアルミニウム / シリコン基板 / アルミ薄膜 / 真空紫外光 / 光電子分光法 / 角度分解 / 紫外光 / 表面 / GaAs / シリコン / X線光電子分光 / 紫外光電子分光 / VUVレ-ザ- / 時間分割光電子分光法 / 表面反応 / 光反応 / メチルラジカル / 並進エネルギ-分布 |
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| Research Abstract |
We have studied pyrolytic and photolytic dissociation of halogen and organometallic compounds on insulators, metals, and semiconductors with laser techniques and photoelectron spectroscopic techniques.
Laser irradiation at 193 or 351 nm of a multilayer of Cl_3 of CH_3Cl on an Si wafer at 100 K leads to both photodissociation of these molecules and formation of photoetchig products. The kinetic energy distributions of photofragments (Cl, CH_3) and etching products (SiCl, SiCl_2) were measured.
Pyrolytic dissociation of trimethylgallium (TMGa) and trimethylindium (TMIn) on Si, Au, and Al substrates was studied at various temperatures from 80 to 670 K by x-ray photoelectron spectroscopy. The results indicate that TMGa and TMIn on Si (111) dissociates into Ga, In, and CH_3 on the substrateeven at 200 K and CH_3 surther dissociates into C, CH, and CH_2 at higher temperatures. Photodissociation of a monolayer of TMGa and TMIn on Si, GaAs, or Au is observed with an incident wavelength of 193 and 226 nm ; direct absorption by the absorbed molecules occurs at this wavelength. A 355 nm, photodissociation does not occur.
The photodissociation dynamics of organometallic compounds (tetramethyltin, trimethylgallium, trimethylindium and dimethylzinc) absorbed on a quatrz substrate at 100 K have been studied by time-of-flight massspectrometry, detecting mainly CH_3 photofragments.
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