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Study on Atomic Layer Epitaxy of Wide-Gap Compound Semiconductors by Metalorganic Vapor Phase Growth

Research Project

Project/Area Number 01460071
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionThe University of Tokyo

Principal Investigator

ONABE Kentaro  The University of Tokyo, Faculty of Engineering, Associate Professor, 工学部, 助教授 (50204227)

Co-Investigator(Kenkyū-buntansha) YAGUCHI Hiroyuki  The University of Tokyo, Faculty of Engineering, Research Associate, 工学部, 助手
KONDO Takashi  The University of Tokyo, Faculty of Engineering, Research Associate, 工学部, 助手 (60205557)
FUKATSU Susumu  The University of Tokyo, Research Center for Advanced Science and Technology, Re, 先端科学技術研究センター, 助手 (60199164)
SHIRAKI Yasuhiro  The University of Tokyo, Research Center for Advanced Science and Technology, Pr, 先端科学技術研究センター, 教授 (00206286)
ITO Ryoichi  The University of Tokyo, Faculty of Engineering, Professor, 工学部, 教授 (40133102)
Project Period (FY) 1989 – 1991
Project Status Completed (Fiscal Year 1991)
Budget Amount *help
¥7,400,000 (Direct Cost: ¥7,400,000)
Fiscal Year 1991: ¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 1990: ¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 1989: ¥2,400,000 (Direct Cost: ¥2,400,000)
KeywordsMovpe / Widegap Compound Semiconductor / Atomic Layer Epitaxy / Gallium Nitride / Gallium Arsenide Phosphide / Structural Transformation / Visible-Light-Emitting Material / 青色発光半導体レ-ザ / 結晶構造交換
Research Abstract

In this study, crystal growth and characterization of compound semiconductor GaAsP-related quantum wells and cubic GaN have been attemped. We have clarified the crystal growth features and the materials properties as the folowing.
1) Strained-layer quantum well structures based on the GaAs/GaAsp and GaAsP/GaP heterostructures have been grown. From photoluminescence, infrared reflectance spectroscopy and photoreflectance measurements, the band discontinuity at the heterointerfaces has been determined, showing alloy composition and strain dependences.
2) GaN has been successfully grown using dimethylhydrazine as the group V (N) element source. It has been show that the grown cubic GaN is superior in its crystal perfection. This is a realization of "structural transformation heteroepitaxy", which forms a new concept of epitaxial growth technology.
For the next steps, further improvements in the growth method, characterization of other properties and atempts for photonic device applicatios are to be carried out.

Report

(4 results)
  • 1991 Annual Research Report   Final Research Report Summary
  • 1990 Annual Research Report
  • 1989 Annual Research Report
  • Research Products

    (31 results)

All Other

All Publications (31 results)

  • [Publications] Y.Miura,K.Onabe,X.Zhang,Y.Nitta,S.Fukatsu,Y.Shiraki and R.Ito: "Compositional latching in GaAs_1-_xP_x/GaAs Metalorganic Vapor Phase Epitaxy" Japanese Journal of Applied Physics. 30. L664-L667 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] X.Zhang,K.Onabe,Y.Nitta,B.P.Zhang, S.Fukatsu,Y.Shiraki and R.Ito: "Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_1-_xP_x Strained-Layer Single Quantum Wells" Japanese Journal of Applied Physics. 30. L1631-L1634 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Y.Nitta,K.Onabe,S.Fukatsu,Y.Shiraki and R.Ito: "Structural-Transformation Heteroepitaxy of GaN on GaAs by MOVPE" Tenth Record of Alloy Semiconductor Physics and Electronics Symposium. 10. 173-180 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] X.Zhang,K.Onabe,Y.Nitta,B.P.Zhang,S.Fukatsu,Y.Shiraki and R.Ito: "Optical Characterization of Band-Edge Discontinuities in GaAs/GaAs_1-_xP_x Strained-Layer Quantum Wells" Tenth Record of Alloy Semiconductor Physics and Electronics Symposium. 10. 343-350 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] X.Zhang,K.Onabe,Y.Nitta,B.P.Zhang,S.Fukatsu,Y.Shiraki and R.Ito: "Optical Characterization of Bans-Edge Line-Ups in GaAs/GaAs_1-_xP_x Strained-Layer Quantum Wells" Surface Science. (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 張 雄、尾鍋 研太郎、深津 晋、白木 靖寛、伊藤 良一: "GaAs/GaAsP歪み量子井戸の作製とその物性" 電子情報通信学会研究会論文誌. ED91ー111. 13-18 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 尾鍋 研太郎他(分担執筆): "先端デバイス材料ハンドブック" オ-ム社, (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Y. Miura, K. Onabe, X. Zhang, Y. Nitta, S. Fukatsu, Y. Shiraki and R. Ito: ""Compositional Latching in GaAs_<1-X>P_X/GaAs Metalorganic Vapor Phase EPitaxy"" Jpn. J. Appl. Phys.30. L664-L667 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] X. Zhang, K. Onabe, Y. Nitta, B. P. Zhang, S. Fukatsu, Y. Shiraki and R. Ito: ""Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_<1-X>P_X Strained-Layer Single Quantum Wells"" Jpn. J. Appl. Phys.30. L1631-L1634 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Y. Nitta, K. Onabe, S. Fukatsu, Y. Shiraki and R. Ito: ""Structural-Transformation Heteroepitaxy of GaN on GaAs by MOVPE"" Proc. 10th Alloy Semicond. Phys. and Electron. Symp.10. 173-180 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] X. Zhang, K. Onabe, Y. Nitta, B. P. Zhang, S. Fukatsu, Y. Shiraki and R. Ito: ""Optical Characterization of Band-Edge Discontinuities in GaAs/GaAs_<1-X>P_X Strained-Layer Quantum Wells"" Proc. 10th Alloy Semicond. Phys. and Electron. Symp.10. 343-350 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] X. Zhang, K. Onabe, Y. Nitta, B. P. Zhang, S. Fukatsu, Y. Shiraki and R. Ito: ""Optical Characterization of Band-Edge Line-Ups in GaAs/GaAs_<1-X>P_X Strained-Layer Quantum Wells"" Surface Science.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Y.Miura,K.Onabe,X.Zhang,Y.Nitta,S.Fukatsu,Y.Shiraki and R.Ito: "Compositional Latching in GaAs_<1ーx>P_x/GaAs Metalorganic" Japanese Journal of Applied Physics. 30. L664-L667 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] X.Zhang,K.Onabe,Y.Nitta,B.P.Zhang,S.Fukatsu,Y.Shiraki and R.Ito: "Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_<1ーx>P_x StrainedーLayer Single Quantum Wells" Japanese Journal of Applied Physics. 30. L1631-L1634 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] Y.Nitta,K.Onabe,S.Fukatsu,Y.Shiraki and R.Ito: "StructuralーTransformation Heteroepitaxy of GaN on GaAs by MOVPE" Tenth Record of Alloy Semiconductor Physics and Electronics Symposium. 10. 173-180 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] X.Zhang,K.Onabe,Y.Nitta,B.P.Zhang,S.Fukatsu,Y.Shiraki and R.Ito: "Optical Characterization of BandーEdge Discontinuities in GaAs/GaAs_<1ーx>P_x StrainedーLayer Quantum Wells" Tenth Record of Alloy Semiconductor Physics and Electronics Symposium. 10. 343-350 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] X.Zhang,K.Onabe,Y.Nitta,B.P.Zhang,S.Fukatsu,Y.Shiraki and R.Ito: "Optical Character ization of BandーEdge LineーUps in GaAs/GaAs_<1ーx>P_x StrainedーLayer Quantum Wells" Surface Science. (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] 張 雄,尾鍋 研太郎,深津 晋,白木 靖寛,伊藤 良一: "GaAs/GaAsP歪み量子井戸の作製とその物性" 電子情報通信学会研究会論文誌. ED91ー111. 13-18 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] 尾鍋 研太郎 他(分担執筆): "先端デバイス材料ハンドブック" オ-ム社, (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] Y.Miura,K.Onabe,X.Zhang,Y.Nitta,S.Fukatsu,Y.Shiraki and R.Ito: "Compositional Latching in GaAS_<1ーx>P_x/GaAs MOVPE" Japanese Journal of Applied Physics. (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] K.Fujita,S.Fukatsu,H.Yaguchi,T.Igarashi,Y.Shiraki and R.Ito: "Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb" Japanese Journal of Applied Physics. 29. L1213-L1216 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] K.Onabe,Y.Miura,X.Zhang Y.Nitta,S.Fukatsu,Y.Shiraki and R.Ito: "Compositional Latching in GaAs_<1ーx>P_x/GaAs MOVPE" Compositional Latching in GaAs_<1ーx>P_x/GaAs MOVPE 22nd Conf.on Solid State Devices and Materials. 489-492 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] B.Zhang,S.Fukatsu,Y.Shiraki and R.Ito: "Reflectance Characterization of QWs and SLSs by FTIR" Japanese Journal of Applied Physics. (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] K.Onabe: "Compound Semiconductors for Optoelectronics and Their Epitaxial Growth Techniques" 9th Int.Course on Physics of Materials. (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] 尾鍋 研太郎 他(分担執筆): "薄膜作製ハンドブック" 共立出版, 300 (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] 尾鍋 研太郎 他(分担執筆): "先端電子材料事典" シ-エムシ-, 1200 (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Iwata,H.Yokoyama,M.Sugimoto,N.Hamao and K.Onabe: "Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures" Applied Physics Letters. 54. 2427-2428 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] K.Nishi,T.Anan,Y.lde and K.Onabe: "Structural and Optical Studies on Molecular Beam Epitaxially Grown(InAs)_m (AlAs)_m and (InAs)_m (GaAs)_m Short-Period Strained Layer Superlattices" Journal of Crystal Growth. 95. 202-205 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] T.Kondo,R.Morita,N.Ogasawara,S.Umegaki and R.Ito: "A Nonlinear Optical Organic Crystal for Waveguiding SHG Devices:(-)2-(α-Methylbenzylamino)-5-Nitropyridine(MBANP)" Japanese Journal of Applied Physics. 28. 1622-1628 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] R.Morita,T.Kondo,N.Ogasawara,S.Umegaki and R.Ito: "Dispersion of the Second-Order Nonlinear Optical Coefficient d_<11> of Organic Crystal 2-Methyl-4-Nitroaniline" Springer Proceedings in Physics:Nonlinear Optics of Organics and Semiconductors. 36. 202-205 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] T.Kondo,N.Ogasawara,S.Umegaki and R.Ito: "Nonlinear Optical Properties of 2-(α-Methylbzylamino)-5-Nitropyridine" Springer Proceedings in Physics:Nonlinear Optics of Organics and Semiconductors. 36. 218-221 (1989)

    • Related Report
      1989 Annual Research Report

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Published: 1989-04-01   Modified: 2016-04-21  

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