• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Interference Effect of Electron Waves in Quantum Wires Fabricated by Focused Ion Beam Implantation

Research Project

Project/Area Number 01460072
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionInstitute of Industrial Science, University of Tokyo.

Principal Investigator

IKOMA Toshiaki  IIS, University of Tokyo, Professor., 生産技術研究所, 教授 (80013118)

Co-Investigator(Kenkyū-buntansha) KURIHARA Yukiko  IIS, University of Tokyo, Res. Associate, 生産技術研究所, 助手 (90013200)
SAITO Toshio  IIS, University of Tokyo, Res. Associate, 生産技術研究所, 助手 (90170513)
HIRAKAWA Kazuhiko  IIS, University of Tokyo, Asso. Prof., 生産技術研究所, 助教授 (10183097)
Project Period (FY) 1989 – 1990
Project Status Completed (Fiscal Year 1990)
Budget Amount *help
¥5,100,000 (Direct Cost: ¥5,100,000)
Fiscal Year 1990: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1989: ¥3,800,000 (Direct Cost: ¥3,800,000)
KeywordsFocused Ion Beam / Quantum Wire / Interference of Electron Waves / AlGaAs / Gallium Arsenide / Electron Scattering / Al Ga As / 弱局在効果 / 低相緩和機構 / 電子-電子散乱
Research Abstract

The purposes of this work are : (i) to develop fabrication processes of the device structures based on quantum wires by means of focused ion beam(FIB) implantation, and (ii)to understand the electron transport mechanisms in the quantum wire structures fabricated by the FIB implantation. In this year, we have studied the electron scattering at the boundaries of the quantum wires. We systematically studied the specularity factor p, which is the probability of specular scattering at the boundary, for various carrier densities N_s and wire widths W.
We defined quantum wires by locally destroying the conductivity of a two dimensional electron gas by FIB implantation. Two types of wire structures were fabricated ; one is a 1mum-wide Schottky-gated wire, and the other an in-plane-gated wire. From measured positive magnetoresistance, p and W were derived based on the classical theory for the boundary scattering When N_s was varied from 2X10^<15>m^<-2>to 3.7X10^<15>m^<-2> in a Schottky-gated wire, p was found to be nearly 0.6 and almost independent of N_s. This fact suggests that the scatterer near the boundary has a shortーranged delta-function like potential. On the other hand, when W was varied from 0.6mum to 0.4mum in an in-plane-gated wire, p was found to depend strongly on W and increase from 0.45 to 0.8. When p is plotted as a function of DELTAd, the distance between the ion implanted position and the boundary of the conducting channel, all data fall on a single curve, which strongly suggests that the scatterers are generated by ion implantation and that the DELTAd dependence of p reflects the spatial distribution of the scatterers. We consider that the most important diffusive scatterers which exist near the boundary are point defects caused by struggling ions.

Report

(3 results)
  • 1990 Annual Research Report   Final Research Report Summary
  • 1989 Annual Research Report
  • Research Products

    (33 results)

All Other

All Publications (33 results)

  • [Publications] Odagiri,T.: "Dephasing Mecanism of Electron Waves in AlGaAs/GaAs Guancan Wires" Proc.of 20th Int.Cont.on Physics of semiconductors,Thessaloniki,Greece. 3. 2431-2434 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Ikoma,T.: "Coherency of Electron Waves in Mesoscopic Electronics" Extended Abstrant of 22nd Int.conf,on Solid State Devices and Materials,sendai. part2. 717-720 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Hirakawa,K.: "ElectronーPhonon Interaction in GaAs/AlxGalーxAs/GaAs SingleーBarrier Heterojunction Diodes" Surface Science. 229. 161-164 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Noguchi,M.: "Coupled Surface Phonons and Plasmons in Electron Accumulation Layer on Intrinsic InAs(100) Reconstructed Surfaces Grown by MBE" Proc of 20th Int.Conf.on physics of semiconductors,The ssaloniki,Greece. 1. 219-222 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] 斎藤 敏夫: "強結合法による(GaAs)m/(Ge2)m〔001〕超格子の電子構造の計算" 電子情報通信学会技術研究報告. ED90ー99. 41-48 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T. Hiramoto, K. Hirakawa, Y. Iye, T. Ikoma: "Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation." Appl. Phys. Letts.54. 2109 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] X-W. Zhao, K. Hirakawa, T, Ikoma: "Intracenter transitions in triply ionized erbium ions diffused into III-V compound semiconductors," Appl. Phys. Lett.,. 54. 712 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T. Saito, T. Ikoma :"Effect of stacking sequence on valence bands in Ga/As/Ge(001) monolayer superlattices" Appl. Phys. Lett.55. 1300 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T. Ikoma, K. Hirakawa, T. Hiramoto, T. Odagiri :"Non-equilibrium effects on quasi-one-dimensional weak and strong localization" Solid-State Electronices,. 32. 1793 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] X-W. Zhao, K. Hirakawa, T. Ikoma :"Diffusion and photoluminescence of erbium and Inp," Gallium Arsenide and Related Compounds 1988, Inst. Phys. Conf.Ser. 96,. 277 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T. Hiramoto, K, Hirakawa, Y. lye, T. Ikoma :"Anomalous derain conductancein quasi-one dimensional AlGaAs/GaAs quantum wire transistors fabricated by focused ion beam implantation," Nanostructure Physics and Fabrication,. 175 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T, Ikoma, K. Hirakawa, T. Hiramoto, T. Odagiri: "Electron transfer in mesoscopic semiconductor structures, Extended Abstract," 21st Conf. on Solid State Devices and Materials. 529 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K. Hirakawa, Y. Hashimoto, T. Saito, T. Ikoma :"Direct experimental estimation of interface dipole effect of GaAs/A1As heterojuncion band offset by x-ray photoelectron spectroscopy" Gallium Arsenide and Related Compounds 1989 (Institute of Physics Conference Series),. Vol. 106,. 345 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K. Hirakawa: "Electron-Phonon Interaction in GaAs/A1_xGa_1-_xAs/GaAs Single-Barrier Heterojunction Diodes," Surface Science. 229. 161 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T. Ikoma, T. Hiramoto :"Weak Localization and Phase Breaking Mechanisms of Electron Waves in Quasi One-Dimensional Wires" NATO ASI(Physics of Granular Nanoelectronics).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T. Saito and T. Ikoma: "Relation between Band Gap Shrinkage and Overlap of Interface States in Polar (GaAs)_n/(Ge_n[001] Superlattice," Superlattices and Microstructures.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] M. Noguchi, K. Hirakawa, and T. Ikoma: "Coupled Surface Phonons and Plasmons in Electron Accumulation Layer on Intrinsic InAs(100) Reconstructed Surfaces Grown by MBE" Proc. of 20th Int'1 Conf. on the Physics of Semiconductors, Thessaloniki, Greece, (World Scientific,. 219 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T. Odagiri, K. Hirakawa, and T. Ikoma :"Dephasing Mechanism of Electron Waves in AlGaAs/GaAs Quantum Wires" Proc. of 20th Int'1 Conf. on the Physics of Semiconductors, Thessaloniki, Greece, (World Scientific,. 2431 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T. Ikoma, T. Odagiri, and K. Hirakawa :"Coherency of Electron Waves in Mesosocopic Electronics" Extended Abstract of the 22nd (1990 International) conf. on Solid State Devices and Materials, Sendai,. 717 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Y. Hashimoto, K. Hirakawa, K. Harada, and T. Ikoma :"Strain Induced Change in Heterojunction Band Offsets at Pseudomorphically Grown InAs/GaAs Heterointerfaces Characterized by X-ray Photoelectron Spectroscopy," Proc. of 6th Int'1 Conf. on Molecular Beam Epitaxy, San Diego.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Y. Hashimoto, K. Hirakawa, and T. Ikoma: "Microscopic Charge Distributions at GaAs/A1As Heterointerfaces Characterized by X-ray Photoelectron Spectroscopy." Proc. of 17th Int'1 Symp. on Gallium Arsenide and Related Compounds,. (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Odagiri,T.: "Dephasing Mechanism of Electron Waves in AlGaAs/GaAs Quantum Wires" Proc.of 20th Int.Conf.on Physics of Semiconductors,Thessaloniki,Greece. 3. 2431-2434 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Ikoma,T.: "Coherency of Electron Waves in Mesoscopic Electronics" Extended Abstract of 22nd Int.Conf.on Solid State Devices and Materials,Sendai. PartII. 717-720 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Hirakawa,K.: "Orientation independence of heterojunction band offsets at GaAsーAlAs neterointerfaces characterized by xーray photomission spectroscopy" Appl.Phys.Lett.57. 2555-2557 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Hirakawa,K.: "ElectronーPhonon Interaction in GaAs/Al_xGa_<1ーx>As/GaAs SingleーBarrier Heterojunction Diodes" Surface Science. 229. 161-164 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Noguchi,M.: "Coupled Surface Phonons and Plasmons in Electron Accumulation Layer on Intrinsic InAs(100)Reconstructed Surfaces Grown by MBE" Proc.of 20th Int.Conf.on Physics of Semiconductors,The ssalonik,Greece. 1. 219-222 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] 斎藤 敏夫: "強結合法により(GaAs)n/(Ge2)n[001]超格子の電子構造の計算" 電子情報通信学会技術研究報告. ED90ー99. 41-48 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Hiramoto,T.: "Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation" Appl.Phys.Lett.vol.54 No.21. 2103-2105 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] Zhao,X-W: "Intracenter transitions in triply ionized erbium ions difused into III-V compound semiconductors" Appl.Phys.Lett.vol.54 No.8. 712-714 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] 生駒俊明: "集束イオンビ-ム注入を用いた一次元 GaAs 細線の作製" 応用物理. vol.58 No.9. 1377-1378 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] Saito,T.: "Effect of stacking sequence on valence bands in Ga/As/Ge(001)monolayer super lattice" Appl.Phys.Lett.vol.55 No.13. 1300-1302 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] Hirakawa,K.: "Dephasing mechanism of electron waves in Al GaAs/GaAs quantum wires" Extended Abst.7th Int'1 Workshop on Future Electron Devices. 123-127 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] Hirakawa,K.: "Direct experimental estimation of interface dipole effect on GaAs/AaAs heterojunction band offset by X-ray photoelectron spectroscopy" Int'l symp.GaAs and Related Compounds. (1989)

    • Related Report
      1989 Annual Research Report

URL: 

Published: 1989-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi