| Project/Area Number |
01460079
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
物理計測・光学
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| Research Institution | Hokkaido University |
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Principal Investigator |
OHBA Ryoji Hokkido Univ., Fac. of Eng., Professor, 工学部, 教授 (20001779)
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| Co-Investigator(Kenkyū-buntansha) |
KAKUMA Seiichi Hokkido Univ., Fac. of Eng., Assistant, 工学部, 助手 (90204338)
UEHIRA Ichiro Hokkido Univ., Fac. of Eng., Assistant, 工学部, 助手 (50176632)
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| Project Period (FY) |
1989 – 1990
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| Project Status |
Completed (Fiscal Year 1990)
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| Budget Amount *help |
¥2,900,000 (Direct Cost: ¥2,900,000)
Fiscal Year 1990: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1989: ¥2,600,000 (Direct Cost: ¥2,600,000)
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| Keywords | Laser diode / Light injection / Light frequency modulation / Intraband relaxation / Microwave |
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| Research Abstract |
The present two-year project aimed to study on the basic characteristics of a new frequency modulation scheme for the optical frequency of laser Diodes when they are irradiated some external light of band-gap energy. In the first year of the project, 1. Theoretical analysis on the optically induced FM effect of laser Diodes and 2. Design and construction of experimental system and preliminary experiment by it were performed. It was expected from the analysis 1. That optical frequency of an AlGaAs laser diode can be modulated up to 10^<13> Hz using some intraband relaxation of carriers. In the lust year of the project, several experiments were performed to illustrate validity of the theoretical analysis using the experimental system built in the last year. It was clarified by the experiments that modulation under 100 KHz is due to opto-thermal effect of the laser diode and under 10 GHzto the plasma effect of the carriers, and this is the same as frequency modulation by direct modulation (modulation by driving current). The expected scheme of modulation due to the intraband relaxation of carriers has not been recognized yet.
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