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Growth and Properties of (III-V)-(II-VI) Super Lattices by Photo-Assisted Atomic Layer Epitaxy

Research Project

Project/Area Number 01460134
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionChiba University

Principal Investigator

YOSHIKAWA Akihiko  Chiba University Department of Electrical and Electronics Engineering Professor, 工学部, 教授 (20016603)

Co-Investigator(Kenkyū-buntansha) YAMAGA Shigeki  Chiba University Department of Electrical and Electronics Engineering Research A, 工学部, 助手 (90158080)
Project Period (FY) 1989 – 1991
Project Status Completed (Fiscal Year 1991)
Budget Amount *help
¥5,700,000 (Direct Cost: ¥5,700,000)
Fiscal Year 1991: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1990: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 1989: ¥3,400,000 (Direct Cost: ¥3,400,000)
KeywordsSuperlattices / Compound semiconductors / Photocatalysis / GaAs / ZnSe / Atomic layer epitaxy / MOMBE / SPA / 有機金属分子線エピタキシ- / (III-V)-(II-VI)超格子
Research Abstract

A new type of strained layer superlattices (SLSs) consisting of III-V compound wells(GaAs)and II-VI compound barriers(ZnSe)are expected as materials for new optoelectronic devices operating in visible region. One of the difficulties when fabricating the SLSs is the difference in epitaxy temperatures for GaAs and ZnSe. Further, although it is fairly easy to grow ZnSe on GaAs at such low temperatures as 250 - 350 C, it is quite difficult to grow GaAs on ZnSe at such temperatures, because the sticking coefficient of As on ZnSe is quite small. Therefore, lowering the epitaxy temperature, especially for GaAs, is very important to fabricate the GaAs-ZnSe SLSs. This is also effective to suppress the cross diffusion between GaAs and ZnSe and also to obtain atomically controlled sharp interfaces between them.
(1) Atomic layer epitaxy of ZnSe and ZnS on GaAs has been achieved by MOVPE and MOMBE.
(2) It has been shown that the epitaxy temperature for ZnSe on GaAs can be drastically lowered by irradiating the growing surface with Ar ion laser lines, and this has been attributed to the photocatalytic reaction on the ZnSe surface.
(3) It has also been found that photoirradiation is very effective to lower the epitaxy temperature for GaAs on ZnSe, which is also attributed to the photocatalysis on ZnSe.
(4) In-situ monitoring technique has been developed for epitaxy of GaAs and ZnSe layers utilizing surface photoabsorption (SPA) and reflectance-difference spectroscopy (RDS).
(5) Optical properties of GaAs-ZnSe SLSs have been theoretically calculated and optimization for the SLS structures has been done.
On the basis of these results, fabrication and characterization of GaAs-ZnSe SLSs are under investigation now.

Report

(4 results)
  • 1991 Annual Research Report   Final Research Report Summary
  • 1990 Annual Research Report
  • 1989 Annual Research Report
  • Research Products

    (82 results)

All Other

All Publications (82 results)

  • [Publications] A.Yoshikawa: "Growth kinetics in MOMBE of ZnSe Using Dimethylzinc and Hydrogen Selenide as Reactants" Journal of Crystal Growth. 94. 69-74 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: "A Study of Growth Mechanism of ZnS and ZnSe in MOMBE Using Dimethylzinc and Chalcogen Hydrides as Reactans" Journal of Crystal Growth. 95. 572-579 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Oniyama: "Growth of Lattice-Matched ZnSe-ZnS Superlattices onto GaAs Substrates by Metalorganic Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 28. L2137-L2140 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: "Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants" Japanese Journal of Applied Physics. 29. L362-L365 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: "Ar+Laser-Assisted Metalorganic Vapor Phase Epitaxy of ZnSe" Proceeding of SPIE-1989 Symposium:Laser/optical Processing of Electronic Materials. 1190. 25-34 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: "Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants" Japanese Journal of Applied Physics. 29(2). L225-L227 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S.Yamaga: "Growth and Properties of ZnCdS Films on GaAs by Low-pressure MOVPE" Journal of Crystal Growth. 99. 432-436 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Oniyama: "Growth of Lattice-Matched ZnSe-ZnS Strained-Layer Superlattice onto GaAs as an Alternative to ZnSSe Alloys" MRS Proceedings on Properties of II-VI Semiconductors. 161. 187-191 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: "Ar Ion Laser-Assisted Metalorganic Vapor Phase Epitaxy of ZnSe" SPIE Proceedings on Laser/Optical Processing of Electronic Materials. 1190. 25-34 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: "Use of Dimethyl Hydrazine as a New Acceptor Dopant Source in Metalorganic Vapor Phase Epitaxy of ZnSe" Journal of Crystal Growth. 101. 305-310 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: ""MBE-like" and "CVD-like"Atomic Layer Epitaxy of ZnSe in MOMBE System" Journal of Crystal Growth. 101. 86-90 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S.Yamaga: "Growth and Properties of Iodine-Doped ZnS Films Grown by Low-Pressure MOCVD Using Ethyliodide as a Dopant Source" Journal of Crystal Growth. 106. 683-689 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: "Effects of Ar ion Laser Irradiation on MOVPE of ZnSe Using DMZn and DMSe as Reactants" Journal of Crystal Growth. 107. 653-658 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T.Okamoto: "Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSe" Japanese Journal of Applied Physics. 30(2A). L156-L159 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S.Yamaga: "Epitaxial ZnS MπS Blue Light Emitting Diode Fabricated on n-GaAs by Low-pressure Metalorganic Vapor Phase Epitaxy" Japanese Journal of Applied Physics. 30(3). 104-108 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: "Effects of Substrate Materials on Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants" MRS Symposium Proceedings on Heteroepitaxy of Dissimilar Materials. 221. 117-122 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T.Okamoto: "Effects of Substrate Materials and Their Properties on Photo-assisted Metalorganic Vapor Phase Epitaxy of ZnSe" Japanese Journal of Applied Physics. 30(2A). L156-L159 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: "Ar Ion Laser Irradiation Effects on the MOVPE Growth of ZnSe Using Dimethylzinc and Hydrogen Selenide as Reactants" Journal of Crystal Growth. 115. 274-278 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S.Yamaga: "Dependence of Electrical and Optical Properties of Iodine-Doped Cubic ZnCdS Films on Solid Compositions" Journal of Crystal Growth.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S.Yamaga: "Atomic Layer Epitaxy of ZnS by a New Gas Supplying System in Low-Pressure Metalorganic Vapor Phase Epitaxy" Journal of Crystal Growth.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: "On the Mechanism of Growth-Rate Enhancement by Photocatalysis in Metalorganic Vapor Phase Epi・taxy of ZnSe" Journal of Crystal Growth.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S.Matsumoto: "New Surface Passivation Method for GaAs and Its Effect on the Initial Growth Stage of Heteroepitaxial ZnSe Layer" Applied Surface Science.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 吉川 明彦(斉藤 進六編): "先端材料応用事典 第5章第1節 光機能材料" (株)産業調査会, 8 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 吉川 明彦: "先端電子材料事典(斎藤 省吾編)“光エレクトロニクス材料"" (株)シ-エムシ-, 10 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: "WIDEGAP II-VI COMPOUNDS FOR OPTO-ELECTRONIC APPLICATIONS“MOMBE Growth and Properties of Widegap II-VI Compounds"(in press)" Chapman and Hall Ltd.,

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 山賀 重來: "CVDハンドブック(小宮山 宏他編)3.3ワイドギャップIIーVI族化合物半導体のMOCVD" 朝倉書店, 20 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Oniyama, S. Yamaga, A. Yoshikawa and H. Kasai: ""Metalorganic Molecular Beam Epitaxy of ZnSe Films Using Dimethylzinc and Hydrogen Selenide"" Journal of Crystal Growth. 93. 679-685 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa, H. Oniyama, H. Yasuda, S. yamaga and H. Kasai: ""Growth Kinetics in MOMBE of ZnSe Using Dimethylzinc and Hydrogen selenide as Reactants"" Journal of Crystal Growth. 94. 69-74 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa, H. Oniyama, S. Yamaga and H. Kasai: ""A Study of Growth Mechanism of ZnS and ZnSe in MOMBE Using Dimethylzinc and Chalcogen Hydrides as Reactants"" Journal of Crystal Growth. 95. 572-579 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa, H. Nomura, S. Yamaga and H. Kasai: ""Controlled Conductivity in Iodine-Doped ZnSe Films Grown by Metalorganic Vapor Phase Epitaxy"" Journal of Applied Physics. 65(3). 1223-1229 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Oniyama, S. yamaga, A. Yoshikawa and H. kasai: ""Growth of Lattice-Matched ZnSe-ZnS Superlattices onto GaAs Substrates by Metalorganic Molecular Beam Epitaxy"" Japanese Journal of Applied Physics. 28. L2137-L2140 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa, T. Okamoto, T. Fujimoto, K. Onoue, S. Yamaga and H. kasai: ""Ar ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants"" Japanese Journal of Applied Physics. 29(2). L225-L227 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S. Yamaga, A. Yoshikawa and H. Kasai: ""Growth and Properties of ZnCdS Films on GaAs by Low-Pressure MOVPE"" Journal of Crystal Growth. 99. 432-436 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Oniyama, S. Yamaga and A. Yoshikawa: ""Growth of Lattice-Matched ZnSe-ZnS Strained-Layer Superlattice onto GaAs as an Alternative to ZnSSe Alloys"" MRS Proceedings on Properties of II-VI Semiconductors. 161. 187-191 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa, T. Okamoto, T. Fujimoto, K. Onoue, K. Haseyama, S. Yamaga and H. Kasai: ""Ar Ion Laser-Assisted Metalorganic Vapor Phase Epitaxy of ZnSe"" SPIE Proceedings on Laser/Optical Processing of Electronic Materials. 1190. 25-34 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa, S. Matsumoto, S. Yamaga and H. Kasai: ""Use of Dimethyl Hydrazine as a New Acceptor Dopant Source in Metalorganic Vapor Phase Epitaxy of ZnSe"" Journal of Crystal Growth. 101. 305-310 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa, T. Okamoto, H. Yasuda, S. Yamaga and H. Kasai: """MBE-like" and "CVD-like" Atomic Layer Epitaxy of ZnSe in MOMBE System"" Journal of Crystal Growth. 101. 86-90 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S. Yamaga, A. Yoshikawa and H. Kasai: ""Growth and Properties of Iodine-Doped ZnS Films Grown by Low-Pressure MOCVD Using Ethyliodide as a Dopant Source"" Journal of Crystal Growth. 106. 683-389 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa, T. Okamoto and T. Fujimoto: ""Effects of Ar ion Laser Irradiation on MOVPE of ZnSe Using DMZn and DMSe as Reactants"" Journal of Crystal Growth. 107. 653-658 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T. Okamoto and A. Yoshikawa: ""Effects of Substrate Materials and Their Properties on Photo-assisted Metalorganic Vapor Phase Epitaxy of ZnSe"" Japanese Journal of Applied Physics. 30(2A). L156-L159 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S. Yamaga: ""Epitaxial ZnS MpiS Blue Light Emitting Diode Fabricated on n-GaAs by Low-Pressure Metalorganic Vapor Phase Epitaxy"" Japanese Journal of Applied Physics. 30(3). 437-441 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa and T. Okamoto: ""Effects of Substrate Materials on Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants"" MRS Symposium Proceedings on Heteroepitaxy of Dissimilar Materials. 221. 117-122 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa and T. Okamoto: ""Ar Ion Laser Irradiation Effects on the MOVPE Growth of ZnSe Using Dimethylzinc and Hydrogen Selenide as Reactants"" Journal of Crystal Growth. 115. 274-278 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S. Yamaga and A. Yoshikawa: ""Dependence of Electrical and Optical Properties of Iodine-Doped Cubic ZnCdS Films on Solid Compositions"" Journal of Crystal Growth. (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S. Yamaga and A. Yoshikawa: ""Atomic Layer Epitaxy of ZnS by a New Gas Supplying System in Low-Pressure Metalorganic Vapor Phase Epitaxy"" Journal of Crystal Growth. (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa and T. Okamoto: ""On the Mechanism of Growth-Rate Enhancement by Photocatalysis in Metalorganic Vapor Phase Epitaxy of ZnSe"" Journal of Crystal Growth. (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S. Matsumoto, S. Yamaga and A. Yoshikawa: ""New Surface Passivation Method for GaAs and Its Effect on the Initial Growth Stage of Heteroepitaxial ZnSe Layer"" Applied Surface Science. (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa (Edited by Harry E. Ruda, CHAPMAN & HALL, London): ""Metalorganic Molecular Beam Epitaxy Growth and Properties of Widegap II-VI Compounds"" WIDEGAP II-VI COMPOUNDS FOR OPTOELECTRONIC APPLICATIONS. 98-123 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa, A. Iguchi and S. Yamaga: ""Photocatalytic Growth-Rate Enhancement in MOMBE of GaAs on ZnSe"" Journal of Crystal Growth.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A. Yoshikawa: ""Ar Ion Laser-Assisted Metalorganic Vapor Phase Epitaxy of ZnSe"" Journal of Phsics D.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] A.Yoshikawa: "Effects of Ar ionーLaser Irradiation on MOVPE of ZnSe Using DMZn and DMSe as Reactants" Journal of Crystal Growth. 107. 653-658 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] T.Okamoto: "Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSe" Japanese Journal of Applied Physics. 30(2A). L156-L159 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] S.Yamaga: "Epitaxial ZnS MπS Blue Light Emitting Diode Fabricated on nーGaAs by LowーPressure Metalorganic Vapor Phase Epitaxy" Japanese Journal of Applied Physics. 30(3). 437-441 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] A.Yoshikawa: "Effects of Substrate Materials on Ar Ion LaserーAssisted MOVPE of ZnSe Using DMZn and DMSe as Reactants" MRS Symposium Proceedings on Heteroepitaxy of Dissimilar Materials. 221. 117-122 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] A.Yoshikawa: "Ar Ion Laser Irradiation Effects on the MOVPE Growth of ZnSe Using Dimethylzinc and Hydrogen Selenide as Reactants" Journal of Crystal Growth. 115. 274-278 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] S.Yamaga: "Dependence of Electrical and Optical Properties of IodineーDoped Cubic ZnCdS Films on Solid Compositions" Journal of Crystal Growth.

    • Related Report
      1991 Annual Research Report
  • [Publications] S.Yamaga: "Atomic Layer Epitaxy of ZnS by a New Gas Supplying System in LowーPressure Metalorganic Vapor Phase Epitaxy" Journal of Crystal Growth.

    • Related Report
      1991 Annual Research Report
  • [Publications] A.Yoshikawa: "on the Mechantam of GrowthーRate Enhancement by Photocatalysis in Metal organic Vapor Phase Epitaxy of ZnSe" Journal of Crystal Growth.

    • Related Report
      1991 Annual Research Report
  • [Publications] S.Matsumoto: "New Surface Passivation Method for GaAs and Its Effect on the Initial Growth Stage of Heteroepitaxial ZnSe Layer" Applied Surface Science.

    • Related Report
      1991 Annual Research Report
  • [Publications] 山賀 重來(小宮山 宏 他編): "CVDハンドブック,3.3ワイドギャップIIーVI族化合物半導体のMOCVD" 朝倉書店, 20 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] A.Yoshikawa: "Ar Ion LaserーAssisted MOVPE of ZnSe Using DMZn and DMSe as Reactants" Japanese Journal of Applied Physics. 29(2). L225-L227 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] S.Yamaga: "Growth and Properties of ZnCdS Films on GaAs by LowーPressure MOVPE" Journal of Crystal Growth. 99. 432-436 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Oniyama: "Growth of LatticeーMatched ZnSeーZnS StrainedーLayer Superlattice onto GaAs as an Alternative to ZnSSe Alloys" MRS Proceedings on Properties of IIーVI Semiconductors. 161. 187-191 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] A.Yoshikawa: "Ar Ion LaserーAssisted Metalorganic Vapor Phase Epitaxy of ZnSe" SPIE Proceedings on Laser/Optical Processing of Electronic Materials. 1190. 25-34 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] A.Yoshikawa: "Use of Dimethyl Hydrazine as a New Acceptor Dopant Source in Metalorganic Vapor Phase Epitaxy of ZnSe" Journal of Crystal Growth. 101. 305-310 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] A.Yoshikawa: "“MBEーlike" and “CVDーlike" Atomic Layer Epitaxy of ZnSe in MOMBE System" Journal of Crystal Growth. 101. 86-90 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] S.Yamaga: "Growth and properties of IodineーDoped ZnS Films Grown by LowーPressure MOCVD Using Ethyliodide as a Dopant Source" Journal of Crystal Growth. 106. 683-689 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] A.Yoshikawa: "Effects of Ar Ion Laser Irradiation on MOVPE of ZnSe Using DMZn and DMSe as Reactants" Journal of Crystal Growth. 653-658 (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] T.Okamoto: "Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSe" Japanese Journal of Applied Physics. 30(2A). L156-L159 (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] S.Yamaga: "Epitaxial ZnS MπS Blue Light Emitting Diode Fabricated on nーGaAs by LowーPressure Metalorganic Vapor Phase Epitaxy" Japanese Journal of Applied Physics. 30(3). 104-108 (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] A.Yoshikawa: "Effects of Substrate Materials on Ar Ion LaserーAssisted MOVPE of ZnSe Using DMZn and DMSe and DMSe as Reactants" (to be published in the Proceedings of MRS).

    • Related Report
      1990 Annual Research Report
  • [Publications] A.Yoshikawa: "Ar Ion Laser Irradiation Effects on the MOVPE Growth of ZnSe Using Dimethyl Zinc and Hydrogen Selenide Reactants" (to be published in Journal of Crystal Growth).

    • Related Report
      1990 Annual Research Report
  • [Publications] 吉川 明彦: "先端電子材料事典(斎藤省吾編)“光エレクトロニクス材料"" (株)シ-エムシ-, (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] A.Yoshikawa: "WIDEGAP IIーVI COMPOUNDS For OPTOーELECTRONIC APPLICATIONS“MOMBE Growth and Properties of Widegap IIーVI Compounds"" Chapman and Hall Ltd.,

    • Related Report
      1990 Annual Research Report
  • [Publications] A.Yoshikawa: "Growth Kinetics in MOMBE of ZnSe Using Dimethylzinc and Hydrogen Selenide as Reactants" Journal of Crystal Growth. 94. 69-74 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] A.Yoshikawa: "A Study of Growth Mechanism of ZnS and ZnSe in MOMBE Using Dimethylzinc and Chalcogen Hydrides as Reactans" Journal of Crystal Growth. 95. 572-579 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] H.Oniyama: "Growth of Lattice-Matched ZnSe-ZnS Superlattices onto GaAs Substrates by Metalorganic Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 28. L2137-L2140 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] A.Yoshikawa: "Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants" Japanese Journal of Applied Physics. 29. L362-L365 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] A.Yoshikawa: "Ar^+Laser-Assisted Metalorganic Vapor Phase Epitaxy of ZnSe" Proceeding of SPIE-1989 Symposium:Laser/optical Processing of Electronic Materials. 1190. 25-34 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] A.Yoshikawa: "MBE-like and CVD-like Atomic Layer Epitaxy of ZnSe in MOMBE System" Journal of Crystal Growth.

    • Related Report
      1989 Annual Research Report
  • [Publications] H.Oniyama: "Growth of Lattice-matched ZnSe-ZnS Strained-Layer Superlattices onto GaAs as an Alternative to ZnSSe Alloys" Proceeding of MRS 1989 Fall Meating:Properties of II-VI Semiconductors.

    • Related Report
      1989 Annual Research Report
  • [Publications] 吉川明彦(斉藤進六編): "先端材料応用辞典 第5章第1節光機能材料" (株)産業調査会, 481-489 (1990)

    • Related Report
      1989 Annual Research Report

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Published: 1989-04-01   Modified: 2016-04-21  

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