| Project/Area Number |
01460137
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
ARAI Shigehisa Tokyo Inst. Tech., Fac. Eng., Associate Professor, 工学部, 助教授 (30151137)
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| Project Period (FY) |
1989 – 1990
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| Project Status |
Completed (Fiscal Year 1990)
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| Budget Amount *help |
¥5,500,000 (Direct Cost: ¥5,500,000)
Fiscal Year 1990: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1989: ¥4,200,000 (Direct Cost: ¥4,200,000)
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| Keywords | Si substrate / ICBE method / CaF_2 / Si superlattice / Fluoride / Si super-fine-structure / Energy band structure / Light Emitting device / Opto-electronics integrated circuit / バンド構造 / CaF_2@Si超格子 / 弗化物@Si超微細構造 |
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| Research Abstract |
This project is a basic research for realization of ultra-fine-structure fluoride/Si light emitting device featured by using silicon substrate, which has usually been considered to by very difficult to apply to opto-electronics integrated circuit (OEIC). The main purpose is realization of single-crystalline superlattice or ultra-fine periodic structures with fluoride (CaF_2) and Si, establishment of the theory on material properties of this superlattice by analyzing energy band diagram in order to obtain basic knowledge on application of this superlattice to optical devices. Results obtained are summarized as follows.
Crystal growth of fluoride (CaF_2) -Si superlattice and ultra-thin layers was investigated using ionized cluster beam epitaxy (ICBE). Condition of epitaxial growth of CaF_2 thin layers (-nm) on Si (111) layers, and Si layers on CaF_2 was made clear. Thermodynamically, Si tend to agglomerate on CaF_2 because the difference between the surface energy of each material is too
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large. To overcome this problem, we investigated the growth process at relatively low substrate temperature 600^ﾟ with ionization and acceleration (V_a=2KV). As a result, 50 pairs of 5nm-CaF_2/5nm-Si superlattice was obtained, which wafound to be single crystalline nature shown by in-situ reflection high energy electron diffraction (RHEED) and has relatively flat surface shown by SEM observation.
Theoretical analysis was made for the electronic band structure of CaF_2/Si superlattice using tight binding method in order to establish the basis of the theory of optical properties of CaF_2/Si ultra-fine periodic structures. As a result of the calculation, it was found optical transition properties of the CaF_2/Si (100) superlattice approaches direct transition as the thickness of Si layer gets thinner, and that remarkable quantization of electron energy levels is expected due to electron confinement by deep insulator-barriered quantum wells.
By these results, we obtained possibility of ultra-fine-structure fluoride/Si light emitting devices and basic knowledge essential to the realization of these devices. Less
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