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Study of Visible Photoluminescence Mechanism in Ultra-Fine Si Particles

Research Project

Project/Area Number 01460142
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionKyushu Institute of Technology

Principal Investigator

FURUKAWA Shoji  Kyushu Institute of Technology, Department of Computer Science and Electronics, Associate Professor, 情報工学部, 助教授 (30199426)

Co-Investigator(Kenkyū-buntansha) MIYASATO Tatsuro  Kyushu Institute of Technology, Department of Computer Science and Electronics,, 情報工学部, 教授 (90029900)
Project Period (FY) 1989 – 1990
Project Status Completed (Fiscal Year 1990)
Budget Amount *help
¥5,900,000 (Direct Cost: ¥5,900,000)
Fiscal Year 1990: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1989: ¥5,200,000 (Direct Cost: ¥5,200,000)
KeywordsSilicon / Ultra-Fine Particle / Room Temperature Visible Photoluminescence / Luminescence Mechanism / Three-Dimensional Quantum Effect / Sputtering / Cluster / Band Gap / ラマン散乱 / 微結晶 / 赤外吸収 / 層状弾性表面波素子 / 水素プラズマ・スパッタ / ポリシラン合金
Research Abstract

The binary Si : H materials prepared by means of a reactive sputtering in pure hydrogen atmosphere at about 100 K have a large optical gap of up to 2.4 eV, and show a visible photoluminescence at room temperature. In this project, the structure of the materials and the mechanism of the visible photoluminescence have been investigated. The summary of the research results are as follows : (1) The peak wavelength and the strength of the photoluminescence spectrum become decreased and increased, respectively, with a decrease in the measurement temperature. (2) From the structural analysis, it is concluded that the material consists of very small Si microcrystals surrounded by hydrogen atoms. (3) The Si : H material prepared at room temperature consists of relatively large Si microcrystals. This indicates that a crystalline material can be obtained by the present preparation method, irrespective of the low substrate temperature, and suggests that the material prepared at about 100 K consists of very small Si microcrystals. (4) From above results, it is concluded that a three-dimensional quantum size effect is the most probable origin for the visible photoluminescene at room temperature, because the increase in the optical gap and the efficient luminescene can be explained by the quantization of states and the effect of confinement, respectively.

Report

(3 results)
  • 1990 Annual Research Report   Final Research Report Summary
  • 1989 Annual Research Report
  • Research Products

    (29 results)

All Other

All Publications (29 results)

  • [Publications] S.Furukawa and T.Miyasato: "Properties of Binary Si:H Materials Prepared by Hydrogen Plasma Sputtering" Proc.1989 Fall Meeting of the Materials Research Society. H4. 1-12 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] M.Komori,S.Furukawa and T.Miyasato: "Control of SiーH Bonds in μCーSi:H Prepared by Hydrogen Plasma Sputtering" Physics Letters. A135. 401-405 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] H.Fujishiro and S.Furukawa: "Growth Model of Hydrogenated Microcrystalline Silicon Prepared by RF Sputtering in Pure Hydrogen" Solid State Communications. 73. 835-838 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] 藤代 博之,古川 昌司,山崎 義武: "水素プラズマ・スパッタ-法による微結晶Si:Hの成長モデル" 日本化学会誌. 5. 495-501 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Shoji Furukawa: "Vibrational Spectra of Binary Si:H Materials Prepared by Hydrogen Plasma Sputtering" Solid State Communications. 76. 523-526 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] 古川 昌司: "国際会議報告1989 Fall Meeting of the Materials Research Society" 電子情報通信学会誌. 73. 130 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Shoji Furukawa: "Vibrational Wave Numbers of SiH_x Bonds in Binary Si:H Materials" Journal of Physics;Condensed Matter. 2. 9209-9213 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] 古川 昌司、中峰 武司、大谷 望: "2元Si:Hの振動スペクトル" 平成2年度電気関係学会九州支部連合大会講演論文集. 133 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] 大谷 望、中峰 武司、佐野 貴弘、古川 昌司、野村 徹、安田 力: "2元Si:H/LiNbo_3層状基板を伝搬する弾性表面波の実験的特性" 1991年電子情報通信学会春季全国大会講演論文集. (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] 佐野 貴弘、野村 徹、安田 力、中峰 武司、大谷 望、古川 昌司: "2元Si:H/LiNbo_3層状構造弾性表面波基板の音響的特性" 1991年音響学会春季講演会講演論文集. (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Shoji Furukawa and Tatsuro Miyasato: "Properties of Binary Si : H Materials Prepared by Hydrogen Plasma Sputtering"" Proc. 1989 Fall Meeting of the Materials Research Society. H4-1. (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Mochimitsu komori, Shoji Furukawa and Tatsuro Miyasato: "Control of Si-H Bonds in mu c-Si : H Prepared by Hydrogen Plasma Sputtering"" Phys. Lett. A 135. 401 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Hiroyuki Fujishiro and Shoji Furukawa: "Growth Model of Hydrogenated Microcrystalline Silicon Prepared by RF Sputtering in Pure Hydrogen"" Solid State Commun. 73. 835 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Hiroyuki Fujishiro, Shoji Furukawa and Yoshitake Yamazaki: "Growth Model of mu c-Si : H prepared by Hydrogen Plasma Sputtering"" J. Chem. Soc. Jpn.5. 495 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Shoji Furukawa: "Vibrational Spectra of Binary Si : H Materials Prepared by Hydrogen Plasma Sputtering"" Solid State Commun.76. 523 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Shoji Furukawa: "Report of International Conference : 1989 Fall Meeting of the Materials Research Society"" J. IEICE. Jpn. 73. 130 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Shoji Furukawa: "Vibrational Wave Numbers of SiH_x Bonds in Binary Si : H Materials"" J. Phys. : Condensed Matter. 2. 9209 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Shoji Furukawa, Takeshi Nakamine and Nozomu Ohtani: "Vibrational Spectra of Binary Si : H Materials"" Proc. Summer Meeting of IEICE of Japan, and Related Soc. Kyushu Institute of Technology. 133 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Nozomu Ohtani, Takeshi Nakamine, Takahiro Sano, Shoji Furukawa, Tooru Nomura and Tsutomu Yasuda: "Experimental Study of Surface Acoustic Waves Propagating on Binary Si : H/LiNbO_3 Layered-Structures"" Proc. Spring Meeting of IEICE of Japan, Tokushima University. (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Takahiro Sano, Tooru Nomura, Tsutomu Yasuda, Takeshi Nakamine, Nozomu Ohtani and Shoji Furukawa: "Study of SAW Propagating on Binary Si : H/LiNbO_3 Structures"" Proc. Spring Meeting of Acoustic Society of Japan. (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Shiji Furukawa: "Vibrational Spectra of Binary Si:H Mateials PrePared by HYdrogen Plasma Sputtering" Solid State Communications. 76. 523-526 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Shoji Furukawa: "Vibrational Wave Numbers of SIH_x Bonds in Binary Si:H Materials" Journal of Physics;Condensed Matter. 2. 9209-9213 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] 古川 昌司、中峰 武司、大谷 望: "2元Si:Hの振動スペクトル" 平成2年度電気関係学会九州支部連合大会構演論文集. 133 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] 大谷 望、中峰 武司、佐野 貴弘、古川 昌司、野村 徹、安田 力: "2元Si:H/LiN60_3層状基板を伝搬する弾性表面波の実験的特性" 1991年電子情報通信学会春季全国大会講演論文集. (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] 佐野 貴弘、野村 徹、安田 力、中峰 武司、大谷 望、古川 昌司: "2元Si:H/LiN60_3層伏構造弾性表面波基板の音響的特性" 1991年音響学会春季講演会講演論文集. (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] Shoji Furukawa,Tatsuro Miyasato: "Properties of binary Si:H materials prepared by hydrogen plasma sputtering" Proc.1989 Fall Meeting of the Materials Research Society. (1990)

    • Related Report
      1989 Annual Research Report
  • [Publications] Hiroyuki Fujishiro,Shoji Furukawa: "Growth model of hydrogenated microcrystalline silicon prepared by RF sputtering method in pure hydrogen" Solid State Communications. (1990)

    • Related Report
      1989 Annual Research Report
  • [Publications] 藤代博之,古川昌司,山崎義武: "水素プラズマ・スパッタ法による微結晶Si:Hの成長モデル" 日本化学会誌. (1990)

    • Related Report
      1989 Annual Research Report
  • [Publications] 古川昌司: "国際会議報告 1989 Fall Meeting of the Materials Research Society" 電子情報通信学会誌. 第73巻,No.2. 130 (1990)

    • Related Report
      1989 Annual Research Report

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Published: 1989-04-01   Modified: 2016-04-21  

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