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An X-ray Study on Pressure Phase Transition and Electron Distribution of Transition Metal Chalcogenides.

Research Project

Project/Area Number 01470056
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 鉱物学(含岩石・鉱床学)
Research InstitutionTokyo Institute of Technology

Principal Investigator

MARUMO Fumiyuki  Tokyo Institute of Technology, Research Laboratory of Engineering Materials, Professor, 工業材料研究所, 教授 (10013492)

Co-Investigator(Kenkyū-buntansha) ISHIZAWA Nobuo  Tokyo Institute of Technology, Research Laboratory of Engineering Materials, Ass, 工業材料研究所, 助教授 (90151365)
TANAKA Kiyoaki  Nagoya Institute of Technology, Faculty of Engineering Associate Professor, 工学部, 助教授 (00092560)
Project Period (FY) 1989 – 1990
Project Status Completed (Fiscal Year 1990)
Budget Amount *help
¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1990: ¥800,000 (Direct Cost: ¥800,000)
Keywordselectron distribution / X-ray diffraction / high pressure / phase transition / difference Fourier map / 3d electron / pyrite-type / 差フ-リェ合成図 / 二硫化ニッケル / ニセレン化ニッケル / モット転移 / 超高圧 / 黄鉄鉱型構造
Research Abstract

Changes of structures and electron distributions were investigated on pyrite-type crystals of NiS_2 and NiSe_2 under high pressure by means of the single-crystal X-ray diffraction method. NiS_2 is a semiconductor under ambient pressure and transformed to show metallic conduction at about 46kbar, whereas NiSe_2 shows no such a phase transition. The cell dimension a of NiS_2 changes discontinuously at the phase transition pressure, and a (A) is approximated with a linear formula of p (kbar) a=5.6881-0.00198p in the pressure region lower than the transition point and a=5.6650-0.00171p from the transition point to 90 kbar. The dimension a of NiSe_2 also changes linearly up to 60 kdar and is approximated with the relation a=5.9605-0.00219p. The result obtained on NiS_2 is inconsistent with that obtained by the present investigators on a NiS_2 crystal prepared by a different method from that employed to synthesize the crystal used in the present investigation. The fact suggests the possibility that a small discrepancy from the stoichiometric composition largely affects the phase transition pressure. The pressure dependence of bond distances is largest in Ni-Se and smallest in Se-Se-. The Ni-S distance changes discontinuously at the transition pressure and the pressure dependence becomes lower above the transition point.
The electron distribution around the Ni^<2+> ion in NiS_2 showed a feature characteristic to 3d^8 ions in octahedral fields. Under high pressure above the transition point, electron distribution has a similar feature as that at 1 bar. However, the difference Fourier maps indicated that the distribution of 3d electrons a little more expands under high pressure than at 1 bar.

Report

(3 results)
  • 1990 Annual Research Report   Final Research Report Summary
  • 1989 Annual Research Report
  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] Y.Takano,F.Marumo,K.Tanaka,H.Morikawa,N.Mori,H.Takahashi: "Crystal Structure Determination of NiS_2 under HighーPressuers." Report of the Research Laboratory of Engineering Metarials,Tokyo Institute of Technology.14. 1-9 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T.Tsuchida,F.Marumo,K.Tanaka,N.Mori,H.Takahashi: "Structure Changes of NiS_2 and NiSe_2 under HighーPressuers." Mineralogical Journal.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T.Tsuchida,F.Marumo,K.Tanaka: "Electron Density Distributions in Crystal of NiS_2 at HighーPressure." Report of the Research Laboratory of Engineering Metarials,Tokyo Institute of Technology.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Y. Takano, F. Marumo, K. Tanaka, H. Morikawa, N. Mori and H. Takahashi,: "Crystal Structure Determination of NiS_2 under High-pressure" Report of Research Laboratory of Engineering Materials, Tokyo Institute of Technology,. Vol. 14. 1-9 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T. Tsuchida, F. Marumo, K. Tanaka, N. Mori and H. Takahashi,: "Structure Changes of NiS_2 and Nise_2 under High-Pressure."

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T. Tsuchida, F. Marumo and K. Tanaka,: "Electron Density Distributions in Crystals of NiS_2 at High-Pressure."

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Y.Takano,F.Marumo,K.Tanaka,H.Morikawa,N.Mo^^ーri,H.Takahashi: "Crystal Structure Determination of NiS_2 under HighーPressures." Report of the Research Laboratory of Engineering Materials,Tokyo Institute of Technology.14. 1-9 (1989)

    • Related Report
      1990 Annual Research Report
  • [Publications] T.Tsuchida,F.Marumo,K.Tanaka,N.Mo^^ーri,H.Takahashi: "Structure Changes of NiS_2 and NiSe_2 under HighーPressure." Mineralogical Journal.

    • Related Report
      1990 Annual Research Report
  • [Publications] T.Tsuchida,F.Marumo,K.Tanaka: "Electron Density Distributions in Crystals of NiS_2 at HighーPressure." Report of the Research Laboratory of Engineering Materials,Tokyo Institute of Technology.

    • Related Report
      1990 Annual Research Report
  • [Publications] Y.Tatano,F.Marumo,K.Tonaka,H.Morikawa,N.Mori,H.Takahashi: "Crystal Stricture Determination of NiS_2 under High-Pressure" Report of the Research Laboratory of Engineering Materials,Tokyo Institute of Technology. 14. 1-9 (1989)

    • Related Report
      1989 Annual Research Report

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Published: 1990-04-01   Modified: 2016-04-21  

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