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Band-Structure Modification by Insertion of Small Atoms at Tetrahedral Interstitial Sites in Zinc-Blende-Like Lattice

Research Project

Project/Area Number 01540282
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 固体物性
Research InstitutionHosei University

Principal Investigator

KURIYAMA Kazuo  Hosei Univ. Electrical Engineering Professor, 工学部, 教授 (20125082)

Project Period (FY) 1989 – 1990
Project Status Completed (Fiscal Year 1990)
Budget Amount *help
¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1990: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1989: ¥1,000,000 (Direct Cost: ¥1,000,000)
KeywordsDirect band gap / Wide gap semiconductor / Lithium ternary compound / Photoluminescence / Impurity level / 多結晶薄膜
Research Abstract

LiZnP can be viewed as a zinc-blende-like (ZnP)^- lattice filled partially with He-like Li^+ interstitials. We have grown LiZnP by directional solidification of Li, Zn, and P using a tantalum crucible. The grown crystals were transparent red in color and showed the antifluorite structure with a=5.765<plus-minus>0.005A. The differential thermal analysis show an endothermic reaction around 950^゚C, indicating the melting point or the decomposition of the crystal. LiZnP was confirmed to be a semiconductor with direct band gap 2.04 to 2.12 eV at a temperature ranging from 295 to 95 K. As grown-crystals are p-type except for some crystals. The typical resistivity, Hall mobility, and carrier concentration at room temperature are of the order of 10^<-1>-10 OMEGAcm, 1-10 cm^2/Vs and 10^<16>-10^<18> cm^<-3>, respectively. The radiative recombination related to a native defect in LiZnP was studied at 77K using photoluminescence (PL) technique. One type of PL emission consists of two peaks : One is a peak 615nm (2.02 eV) associated with a phosphorus vacancy (lying at 110meV below the conduction band) -valence band transition and the other a broad peak at 848nm (1.46eV) associated with phosphorus vacancy-acceptor complex. Another type exhibits an only broad emission around 830 nm. The origin of the broad emissions observed in both types is likely to be identical essentially.

Report

(3 results)
  • 1990 Annual Research Report   Final Research Report Summary
  • 1989 Annual Research Report
  • Research Products

    (18 results)

All Other

All Publications (18 results)

  • [Publications] K.Kuriyama: "Photoluminescence study of native defects in the filled tetrahedral semiconductor LiZnP" J.Appl.Phys.69. (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K.Kuriyama: "Crystal growth and characterization of the filled tetrahedral semiconductor LiZnP" J.Cryst.Growth. (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K.Kuriyama: "Preparation and characterization of the filled tetrahedral semiconductor LiZnP film on quartz" J.Appl.Phys.66. 3945-3947 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K.Kuriyama: "Optical band gap electrical transport properties of filled tetrahedral semiconductor LiZnP" Proceedings of the 19th International Conference on the Physics of Semiconductors,edited by W.Zawadzki (Institute of Physics,Polish Academy of Sciences,Warsaw,1988). 2. 933-936 (1988)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K.Kuriyama: "Optical band gap of the filled tetrahedral semiconductor LiZnP" Rhys.Rev.B. 37. 7140-7142 (1988)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K. Kuriyama: "Photoluminescence study of native defects in the filled tetrahedral semiconductor LiZnP" J. Appl. Phys.Vol. 69. (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K. Kuriyama: "Crystal growth and characterization of the filled tetrahedral semiconductor LiZnP" J. Cryst. Growth. (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K. Kuriyama: "Preparation and characterization of the filled tetrahedral semiconductor LiZnP film of quartz" J. Appl. Phys.Vol. 66. 3945-3947 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K. Kuriyama: "Optical band gap and electrical transport properties of filled tetrahedral semiconductor LiZnP" Proceedings of the 19th International Conference of the Physics of Semiconductors, edited by W. Zawadzki (Institute of Physics, Polish Academy of Sciences, Warsaw, 1988). Vol. 2. 933-936 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K. Kuriyama: "Optical band gap of the filled tetrahedral semiconductor LiZnP" Phys. Rev. B (Rapid Commun.). Vol. 37. 7140-7142 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K.Kuriyama: "Photoluminescence study of native defects in the filled tetrahedral semiconductor LiZnP" J.Appl.Phys.69. (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] K.Kuriyama: "Crystal growth and characterization of the filled tetrahedral semiconductor LiZnP" J.Cryst.Growth. 108. 37-40 (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] K.Kuriyama: "Preparation and characterization of the filled tetrahedral semiconductor LiZnP film on quartz" J.Appl.Phys.66. 3945-3947 (1989)

    • Related Report
      1990 Annual Research Report
  • [Publications] K.Kuriyama: "Optical band gap and electrical transport properties of filled tetrahedral semiconductor LiZnP" Proceedings of the 19th International Conference on the Physics of Semiconductors,edited by W.Zawadzki (Institute of Physics,Polish Academy of Sciences,Warsaw). 2. 933-936 (1988)

    • Related Report
      1990 Annual Research Report
  • [Publications] K.Kuriyama: "Optical band gap of the filled tetrahedral semiconductor LiznP" Phys.Rev.B. 37. 7140-7142 (1988)

    • Related Report
      1990 Annual Research Report
  • [Publications] K.Kuriyama: "Optical band gap of the filled tetrahedral semiconductor LiZnP" Phys.Rev.B. 37. 7140-7142 (1988)

    • Related Report
      1989 Annual Research Report
  • [Publications] K.Kuriyama: "Preparation and Characterization of the filled tetragedral semiconductor LiZnP film on quartz" J.Appl.Phys.66. 3945-3947 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] K.Kuriyama: "Crystal Growth and characteriaztion of the filled tetrahedral semiconductor LiZnP" Proceedings of the 9th international Conference on Crystal Growth.

    • Related Report
      1989 Annual Research Report

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Published: 1989-04-01   Modified: 2016-04-21  

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