| Project/Area Number |
01550016
|
|---|
| Research Category |
Grant-in-Aid for General Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Applied materials
|
|---|
| Research Institution | Kyoto Institute of Technology |
|---|
Principal Investigator |
NISHINO Shigehiro Kyoto Institute of Technology, 工芸学部, 助教授 (30089122)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
MATSUMURA Nobuo Kyoto Institute of Technology, 工芸学部, 助手 (60107357)
SARAIE Junnji Kyoto Institute of Technology, 工芸学部, 教授 (90026154)
|
|---|
| Project Period (FY) |
1989 – 1990
|
| Project Status |
Completed (Fiscal Year 1990)
|
| Budget Amount *help |
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1990: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 1989: ¥1,400,000 (Direct Cost: ¥1,400,000)
|
|---|
| Keywords | Plsama CVD / Photo-CVD, / LPCVD / Cubic sic / 3C-SiC / Low Temperature Growth / Heteroepitaxy, / Crystal Growth, / 3C-SiC |
|---|
| Research Abstract |
3C-SiC films were grown on Si substrates by plasma-assisted chemical vapor deposition (PCVD) and low pressure chemical vapor deposition (LPCVD) at 700-1500^ﾟC using Si_2H_6 and C_2H_2. Single crystalline SiC films were grown above 900^ﾟC. Polycrystalline SiCFilms were grown below 900^.C. The growth rate of PCVD was higher than LPCVD below 800^0C. The growth Kinetics was investigated by measuring the growth rate. The decomposition process of source gases was investigated by quadrapole mass spectroscopy (QMS). It was clarified that the radicals produced from Si_2H_6 played an important role below 800^ﾟC.
The growth rate in PCVD was higher than LPCVD below 800^ﾟC. In LPCVD, the activation energy was 13 Kcal/mol above 800^ﾟC, and 31 Kcal/mol below 800^ﾟC. In PCVD, the activation energy was equal to the value in LPCVD above 800^ﾟC, and the growth rate was almost constant.
The growth rate was constant, even if C_2H_2 or H_2 flow rate increased in the temperature range of 750-1000^ﾟC both with and without plasma-assistance. The fact that the growth rate was independent on H_2 flow rate indicates that the limiting process of the growth rate is not the diffusion of chemical species in In LPCVD, the reaction is first order in low temperature region, and second order in high temperature region, which indicates that bi-molecular reaction related to Si_2H_6 occurs in high temperature region.
Single crystalline SiC films were grown on Si (111) substrates above 900^ﾟC by PCVD and LPCVD. The growth rate in PCVD was higher than LPCVD below 800^ﾟC. Growth Kinetics was considered from growth rates and QMS.
|
