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Molecular Simulation of Film Growth Rate in the CVD Reactor

Research Project

Project/Area Number 01550132
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field Fluid engineering
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

NANBU K.  Institute of Fluid Science, Professor, 流体科学研究所, 教授 (50006194)

Project Period (FY) 1989
Project Status Completed (Fiscal Year 1989)
Budget Amount *help
¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1989: ¥800,000 (Direct Cost: ¥800,000)
KeywordsCVD / Thin Film / Monte Carlo Method / Numerical Method / Kinetic Theory / Boltzmann Equation / CVD(化学気相折出)法
Research Abstract

A new numerical method, which is a combination of the test-particle Monte Carlo method and Monte Carlo direct simulation method, is developed for the purpose of calculating the growth rate of CVD films. This method is successfully employed for two types of CVD reactors. The research results are summarized as follows.
Two-Dimensional Horizontal Reactor The diffusion theory is shown to be applicable only up to the Knudsen number less than 0.01. The growth rate is proportional to exp(-cx) , where c is a constant and x is the distance along the substrate. The constant c decreases with increasing flow velocity and decreasing pressure and reaction probability.
Axisymmetrical Diffusion Reactor The case when the number of wafers is the order of 100 is considered. It is possible for each wafer to have almost the same growth rate if the direction of flow is switched at a certain time. The growth rate is proportional to the reaction probability. Nonuniformity of the thickness distribution of the film near the edge of the wafer can be predicted from the present numerical method.

Report

(2 results)
  • 1989 Annual Research Report   Final Research Report Summary
  • Research Products

    (8 results)

All Other

All Publications (8 results)

  • [Publications] 南部健一・五十嵐三武郎・渡部安雄: "減圧CVD法による薄膜成長速度の分子運動論的研究" 日本機械学会論文集.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 五十嵐三武郎・南部健一・渡部安雄: "拡散炉におけるCVD薄膜成長速度の分子論的研究" 日本機械学会論文集.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Nanbu,S.Igarashi, and Y.Watanabe: "Simulation of Film Growth Rate in the Low-Pressure CVD and Sputtering Techniques" Proc. Intern. Workshop on Monte Carlo Methods and Parallel Algorithms.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K. Nanbu, S. Igarashi, and Y. Watanabe: ""Molecular simulation of Film Growth Rate in the Low-Pressure CVD Method - Two - Dimensional Horizontal Reactor"" Bulletin of Japan Soc. Mech. Engrs.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] S. Igarashi, K. Nanbu, and Y. Watanabe: ""Molecular Theory of Film Growth Rate in the CVD Diffusion Reactor"" Bulletin of Japan Soc. Mech. Engrs.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 南部健一・五十嵐三武郎・渡部安雄: "減圧CVD法による薄膜成長速度の分子運動論的研究" 日本機械学会論文集.

    • Related Report
      1989 Annual Research Report
  • [Publications] 五十嵐三武郎・南部健一・渡部安雄: "拡散炉におけるCVD薄膜成長速度の分子論的研究" 日本機械学会論文集.

    • Related Report
      1989 Annual Research Report
  • [Publications] K.Nanbu,S.Igarashi,and Y.Watanabe: "Simulation of Film Growth Rate in the Low-Pressure CVD and Sputtering Techniques" Proc.Intern.Workshop on Monte Carlo Methods and Parallel Algoirthms.

    • Related Report
      1989 Annual Research Report

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Published: 1989-04-01   Modified: 2016-04-21  

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