| Project/Area Number |
01550235
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Kitami Institute of Technology |
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Principal Investigator |
NOYA Atsushi Kitami Institute of Technology, Faculty of Engineering, Lecturer, 工学部, 講師 (60133807)
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| Project Period (FY) |
1989 – 1990
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| Project Status |
Completed (Fiscal Year 1990)
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| Budget Amount *help |
¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1990: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1989: ¥800,000 (Direct Cost: ¥800,000)
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| Keywords | metallization material / intermetallic compound / thin film / Cu_9Al_4 / metal-semiconductor interface / Al_4Cu_9 |
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| Research Abstract |
The intermetallic compound film of Cu_9Al_4 was prepared by cosputtering at substrate temperatures below 300^ﾟC. The prepared film is structurally quite stable up to about 700^ﾟC, showing little change in X-ray diffraction pattern. The film with well-textured polycrystalline grains has a low electrical resistivity of 13muOMEGA-cm. The interaction of deposited Cu_9Al_4 film with a silicon substrate is then studied by Auger electron spectroscopy. Although the incorporation of silicon into the Cu_9Al_4 film with low concentration level is observed, the interface is stable up to the annealing temperature of 700^ﾟC without formin aluminum spikes or a copper silicide layer. Then, the diffusion barrier of TiN is interposed between the Cu_9Al_4 film and Si to suppress the incorporation of Si into the film. The formed Cu_9Al_4/TiN/Si system is found to be stable up to about 670^ﾟC. The mass transport across the interface of Cu_9Al_4/TiN then becomes at more higher temperatures on the opportunity of the reaction between Al and Ti. It is revealed that Cu_9Al_4 film is a useful material to realize a stable interface when employed as a metallization material for silicon device integration.
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