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Study on The Emission Mechanism of Rare Earth Ions in Semiconductors and Its Application

Research Project

Project/Area Number 01550240
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionThe University of Electro-Communications

Principal Investigator

KIMURA Tadamasa  The University of Electro-Communications, Faculty of Electro-Communications Department of Electronic engineering Professor, 電気通信学部・電子工学科, 教授 (50017365)

Co-Investigator(Kenkyū-buntansha) YUGO Shigemi  The University of Electro-Communications, Faculty of Electro-communications Depa, 電気通信学部・電子工学科, 助手 (80017392)
KAWANO Katuyasu  The University of Electro-Communications, Faculty of Electro-Communications Depa, 電気通信学部・電子工学科, 助教授 (90017418)
NAKATA Ryouhei  The University of Electro-Communications, Faculty of Electro-Communications Depa, 電気通信学部・電子工学科, 教授 (10017353)
Project Period (FY) 1989 – 1991
Project Status Completed (Fiscal Year 1991)
Budget Amount *help
¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 1991: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1990: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1989: ¥1,400,000 (Direct Cost: ¥1,400,000)
KeywordsRare Earth Atoms / Erbium / 4F Intrashell Electronic Transition Emission / Electron Impact Excitation / Energy Transfer Efficiency / Fluorescence Efficiency / エレクトロルミネッセンス(EL) / フォトルミネッセンス(PL) / 光デバイス / イオン注入法 / IIIーV族半導体 / 4f内殻遷移発光
Research Abstract

The most important result that was found during this three year research done with a help of Grant-in-aid for Scientific Research is that we succeeded for the first time in observing the 1.54mum emission due to the 4f intrashell transition of Er^<3+> ions ( ^4I_<13/2>-> ^4I_<15/2>) which are doped in InP by ion implantation by means of a new excitation method, that is, electron impact excitation. Study on the emission of rare earth ions doped in III-V compound semiconductors and in Si semiconductor had been mostly carried out using the energy transfer mechanism from the recombination of electrons and holes which were generated by illumination (photoluminescence) or injected into a pn junction (LED). The problem was a low emission efficiency for lasing, thermal quenching at high temperatures, and little understanding of the precise energy transfer and non-radiative transition mechanisms. We have found that the 1.54 mum emission characteristics of the Er^<3+> ions in InP (spectrum and th … More e temperature dependence of the intensity) were different in essential between photoluminescence and impact excitation. We made a detailed comparison of the emission characteristics between photoluminescence and impact excitation, which made a great contribution to elucidating the emission mechanisms of rare earth ions doped in crystalline semiconductors. The following studies were carried. 1) Er-doping process into InP by means of ion implantation, 2) Impact excitation emission of Er/InP. 3) Analysis of excitation and emission mechanisms of Er ions, 4) Evaluation of emission efficiency and impact cross section.
In conclusion, there are various Er3^+ emission centers in InP, and different centers are excited between photoluminescnce and impact excitation. the non-radiative transition mechanism is also different for different centers. We are planning to study further on the emission mechanism, improve the emission efficiency and challenge the impact excitation emission of other rare earth ions in other semiconductors (especially in Si). Less

Report

(4 results)
  • 1991 Annual Research Report   Final Research Report Summary
  • 1990 Annual Research Report
  • 1989 Annual Research Report
  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] H.Isshiki: "Impact excitation of erbium-related 1.54 μm luminescence peak in erbium-doped InP" Applied Physico Letters. 58. 484-486 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Isshiki: "1.54 μm Electroluminescence by Electron Impact Excitation of Er Atoms Doped in InP" Japanese Journal of Applied Physics. 30. L225-L227 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Isshiki: "Characteristics of the Electroluminescence and photoluminescence Emissions of Erbium Ions Doped in InP and the Energy Transfer Mechanism" Journal of Applied Physics. 70. 6993-6998 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Isshiki: "Emissions of the 1.54 μm Er-related peaks by impact excitation of Er atoms in InP and its characteristics" Physical Concepts of Materials for Novel Optoelectronics Device,Applications 1:Materials Growth and Characterization. 1361. 223-227 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Isshiki: "1.54 μm Electroluminescence by Electron Impact Excitation of Er・Atoms Doped in InP" Extended Abstracts of the 22nd Conference on Solid State Devices and Materials. 605-608 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T.Kimura: "Impact Excitation Electroluminescence Specton of Er Ions in InP and the possibility of an efficient EL diode at 1.54 μm" Extended Abstracts of the International Semicenductor Device Research Symposium. 359-361 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Isshiki, H. Kobayashi, S. Yugo, T. Kimura, and T. Ikoma: ""Impact excitation of erbium-related 1.54mum luminescence peak in erbium-doped InP"" Appl. Phys. Lett.58. 484-487 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Isshiki, H. Kobayashi, S. Yugo, T. Kimura, and T. Ikoma: ""1.54mum Electro-luminescence by electron Impact Excitation of Er Atoms Doped in InP"" Jpn. J. Appl. Phys.30. L225-L227 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Isshiki, R. Saito, T. Kimura, and T. Ikoma: ""Characteristics of the Electroluminescence and Photoluminescence Emissions of Erbium lons Doped in Inp and the Energy Transfer Mechanism"" J. Appl. Phys.70. 6993-6998 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Isshiki, H. Kobayashi, S. Yugo, T. Kimura, and T. Ikoma: ""1.54 mum Electro-luminescnece by Electron Impact Excitation of Er Atoms Doped in InP"" Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, Sendai. 605-608 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Isshiki, H. Kobayashi, S. Yugo, R. Saito, T. Kimura, and T. Ikoma: ""Emission of the 1.54mum Er-related peaks by impact excitation of Er atoms in InP and its characteristics"" Proceedings of SPIE's International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications, Aachen, 1990, SPIE. 1361. 223-227 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T. Kimura, H. Isshiki, R. Saito, S. Yugo, and T. Ikoma: ""Impact Excitation Electroluminescence Spectra of Er ions in InP and the possibility of an efficient EL diode at 1.54mum"" Proceedings 1991 International Semiconductor Device Research Symposium, Charlottesville VA. 359-361 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Isshiki: "Impact excitation of erbiumーrelated 1.54μm luminescence peak in erbiumーdoped InP." Applied Physics Letters. 58. 484-486 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Isshiki: "1.54μm Electroluminescence by Electron Impact Excitation of Er Atoms Doped in InP" Japanese Journal of Applied Physics. 30. L225-L227 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Isshiki: "Characteristics of the Electroluminescence and photoluminescence Emissions of Erbium Ions Doped in InP and the Energy Transfer Mechanism" Journal of Applied Physics. 70. 6993-6998 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Isshiki: "Emissions of the 1.54μm Erirelated peaks by impact excitation of Er atoms in IuP and its characteristico" Physical concepts of Materials for Novel Optoelectronics Device Applicatiens 1:Matenials Growth and characterigation. 1361. 223-227 (1990)

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Isshiki: "1.54μm Electroluminercence by Electron Impact Excitochen of Er Atoms Doped in InP" Extended Abstracts of the 22nd Conference on Solid State Devices and Materials. 605-608 (1990)

    • Related Report
      1991 Annual Research Report
  • [Publications] T.Kimura: "Impact Excitafion Electroluminescence Spectra of Er ions in IuP and the possibility of an efficient EL diode at 1.54μm" Extended Abstracts of the International Semicon ducfon Device Research Symposium. (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Issiki,H.Kobayashi,S.Yugo,T.Kimura and T.Ikoma: "1.54μm Electroluminescence by Electron Impact Excitation of Er Atoms Dosed in InP" Extended Abstracts of the 22nd Conf.on SSDM,Sendai. 605-608 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Issiki,H.Kobayashi,S.Yugo,R.Saito,T.Kimura and T.Ikoma: "Emission of The 1.54μm Erーrelatede Peaks by Impact Excitation of Er Atoms in InP and Its Characteristics" SPIE's International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications,Aachen. (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Isshiki,H.Kobayashi,S.Yugo,T.Kimura and T.Ikoma: "Impact excitation of the Erbiumーrelated 1.54μm luminescence peak in Erbiumーdoped InP" Appl.Phys.Lett.58. 484 (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Isshiki,H.Kobayashi,S.Yugo,T.Kimura and T.Ikoma: "1.54μm electroluminescence by electron impact excitation of Er atoms doped in InP" Jpn.J.Appl.Phys.,Part2,Letters. 30. L225-227 (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] 小林 仁、一色 秀夫、湯郷 成美、斎藤 理一郎、木村 忠正、生駒 俊明: "IIIーV族半導体中のErの発光スペクトルへのV族原子の影響" 第51回応用物理学会学術講演会. 1089 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] 一色 秀夫、小林 仁、湯郷 成美、斎藤 理一郎、木村 忠正、生駒 俊明: "Erド-プInPの電子衝突励起エレクトロルミネッセンス" 第51回応用物理学会学術講演会. 1090 (1990)

    • Related Report
      1990 Annual Research Report

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Published: 1989-04-01   Modified: 2016-04-21  

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