| Project/Area Number |
01550243
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Research Institute of Electronics, Shizuoka University |
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Principal Investigator |
SUKEGAWA Tokuzo Research Institute of Electronics, Professor, 電子工学研究所, 教授 (30006225)
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| Co-Investigator(Kenkyū-buntansha) |
KIMURA Masakazu Research Institute of Electronics, Research Associate, 助手 (50177929)
TANAKA Akira Research Institute of Electronics, Associate Professor, 助教授 (50022265)
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| Project Period (FY) |
1989 – 1990
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| Project Status |
Completed (Fiscal Year 1990)
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| Budget Amount *help |
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1990: ¥200,000 (Direct Cost: ¥200,000)
Fiscal Year 1989: ¥2,000,000 (Direct Cost: ¥2,000,000)
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| Keywords | GaInP / Alloy Substrate / Green Light-Emitting Diode / Crystal Growth / Liquid Phase Epitaxy / Lattice-Mismatch / 燐化ガリウム・インジウム混晶 / 異種接合 |
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| Research Abstract |
GalnP alloy is a promising material for green-light-emitting devices. However, the devices made from the alloy have not yet been fabricated by industrial manner. A large obstacle is the absence of the substrate to grown the alloy on. In this study, a technique to prepare an alloy bulk or a thick layer available to the the substrate was developed.
To obtain a thick grown layer, a liquid phase growth technique was adopted. Three problems to be solved are 1) escape of P from the growth solution due to evaporation, 2) the substrates for the growth of the alloy ; the substrates cannot be obtained in this stage, and 3) the method to grow a sufficiently thick alloy, which can not be achieved by a conventional slow cooling method. The experimental results are as follows. 1) A quasi-air-tight slide boat was used. The growth rate could be increased as compared with the cases using the conventional open-type boat. 2) Two kinds of substrate were adopted ; GaAsP expensive substrates and GaP substrates used widely. A lattice mismatch exists between a GaP substrate and a grown alloy layer. To relax the mismatch, the fabrication of a step-wise graded composition layer and a continuously graded one on the GaP substrate was investigated. It was made clear that the compositional step of 0.25 mole fraction can be allowed for a layer-mode growth under suitable conditions. In the experiments for the continuously graded composition, the composition could be changed from 0.95 to 0.61 by slow-cooling method. 3) The yo-yo solute feeding method was applied to the growth of a thick layer, and the layer with 200mum thickness could be successfully grown on the GaP substrate. Using 1), 2) and 3) techniques mentioned above, GaInP alloy substrates can be fabricated. Thus, the fundamental techniques to develop a high efficiency greenlight-emitting diode could be established.
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