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Development of the Non-Contact Characterization Techniques of Minority Carrier Lifetime and Surface Recombination Conditions of Semiconductor Wafers

Research Project

Project/Area Number 01550246
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionNagoya Institute of Technology

Principal Investigator

USAMI Akira  Nagoya Institute of Technology, 工学部, 助教授 (90024265)

Project Period (FY) 1989 – 1990
Project Status Completed (Fiscal Year 1990)
Budget Amount *help
¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1990: ¥400,000 (Direct Cost: ¥400,000)
KeywordsFocused micro-wave / Contaminated pattern / Residual organic solvent / Residual resist pattern / SRMI / Impedance mismatching / BRMI / SRM1 / インピ-ダンス不整合の除去 / 残留レジストパタ-ン / シリコンウェ-ハ工程 / 集束マイクロ波系 / 表面汚染 / 表面再結合速度 / 残留有機溶剤
Research Abstract

From the theoretical analysis of the photoconductivity decay method (WLT) with small alpha delta-function carrier injection pulse and photoconductivity modulation method (SRMI and R-SRMI) with large alpha carrier injection pulse, it is found that SRMI and R-SRMI are more sensitive than the WLT method. Furthermore, R-SRMI method is insensitive to tau_b, because the R-SRMT signal is defined as the value subtracted SRMI (large alpha injection) from the BRMI (small alpha injection). The R-SRMI has inverse relation to SRMT and is related to S_<eff> closely. The R-SRMI is insensitive to tau_b and is very suitable for i) different condition Si wafers, especially surface active region, ii) a wafer which has distribution of tau_b and/or resistivity in LST processes. SRMI and R-SRMI measurements can reduce the calculation time compared to the photoconductivity decay curves analysis (WLT ; tau_b and S_<eff>).
The laser-microwave characterization systems (WLT, SRMI and R-SRMI measurement) are successively applied to several wafer processes, detection of surface contamination of the starting wafer, oxidation and its dry etching, ion implantation and annealing processes, junction formation by impurity diffusion, alloying processes etc. The change of the SRMI and/or R-SRMI at contaminated wafer surface are two to three times larger than those of WLT values. The SRMI and R-SRMI mapping measurement systems with laser-microwave are convenient, practical and useful ways for characterizing the Si wafer in various device fabrication processes.

Report

(3 results)
  • 1990 Annual Research Report   Final Research Report Summary
  • 1989 Annual Research Report
  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] Akira Usami: "Contactless measurements of the surface recombination velocity of PーN and highーlow (PーP^+、NーN^+)Junctions fabricated by rapid thermal processing" Mat.Res.Soc.Symp.Proc.146. 359-364 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Akira Usami: "Spatial inhomogeneitics in rapidly thermalーprocessed GaAs Wafer" Mat.Res.Soc.Symp.Proc.146. 419-424 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Akira Usami: "Highーsensitivity surface Characterization with injected carriers by laser beam using focused reflectance microwave probe method" Journal of Crystal Growth. 103. 179-187 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Akira Usami: "Contactless measurements of rapidly thermal processed MBE GaAS on Si and GaAs Wafers" Journal of Crystal Growth. 103. 350-356 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] 宇佐美 晶: "2波長光源を用いた光伝導度変調法によるSiウェ-ハ表面の汚染パタ-ンの非接触評価" 電子情報通信学会技報シリコン材料デバイス. SDMー90ー41. 31-36 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Akira Usami: "Material and Process Learning by NonーContact Characterization of Minority Carrier Lifetime and Surface Recombination Condition (invited paper)" 1991 IEEE International Conference on Microelectronic Test Structures, March 18ー20, 1991. 4. 1-10 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] 宇佐美 晶、徳田 豊: "半導体デバイス工程評価技術" 株式会社 リアライズ社, 628 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Akira Usami: "Contactless measurements of the surface combination velocity of P-N and high-low-(p-p^+, N-N^+) Junctions fabricated by rapid thermal processing" Mat. Res. Soc. Symp. Proc. 146. 359-364 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Akira Usami: "Spatial inhomogeneities in rapidly thermal-processed GaAs Wafer" Mat. Res. Soc. Symp. Proc. 146. 419-424 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Akira Usami: "High-sensitivity surface characterization with injected carriers by laser beam using focused reflectance microwave probe method" Journal of Crystal Growth. 103. 179-187 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Akira Usami: "Contactless measurements of rapidly thermal processed MBE GaAs on Si and GaAs wafers" Journal of Crystal Growth. 103. 350-356 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Akira Usami: "Material and Process Learning by Non-Contact Characterization of Minority Carrier Lifetime and Surface Recombination Condition (invited paper)" IEEE International Conference on Microelectronic Test Structures, March 18-20 1991. 1-10 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Akira Usami: "Highーsensitivity surface characterization with injected carriers by lasor beam using focused raflectance microwave proke method" Journal of Crystal Growth. 103. 179-187 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Akira Usami: "Contactless measurements of rapidly thermal processed MBE GaAs on Si and GaAs wafers" Journal of Crystal Growth. 103. 350-356 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] 宇佐美 晶: "2波長光源を用いた光伝兼度変調法によるSiウェ-ハ表面の汚染パタ-ンの非接触評価" 電子情報通信学会 技報 シリコン材料デバイス. SDMー90ー41. 31-36 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Akira Usami: "Material and Process Learning by NonーContact Characterization of Minority Carrier Lifetime and Surface Recombination Condition(invited paper)" 1991 IEEE International Conference on Microelectronic Test Structures,March 18ー20,1991. 4. 1-10 (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] 宇佐美 晶,徳田 豊: "半導体デバイス工程評価技術" 株式会社 リアライズ社, T.628 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Akira Usami: "CONTACTLESS MEASUREMENTS OF THE SURFACE RECOMBINATION VELOCITY OF PーN AND HIGHーLOW(PーP^+,NーN^+)JUNCTIONS FABRICATED BY RAPID THERMAL PROCESSING" Mat.Res.Soc.Symp.Proc.146. 359-364 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] Akira Usami: "SPATIAL INHOMOGENEITIES IN RAPIDLY THERMALーPROCESSED GaAs WAFER" Mat.Res.Soc.Symp.Proc.146. 419-424 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] Akira Usami: "Highーsensitivity surface characterization with injected carriers by laser beam using focused reflectance microwave probe method" JOURNAL OF CRYSTAL GROWTH.

    • Related Report
      1989 Annual Research Report
  • [Publications] Akira Usami: "Contactless measurements of rapidly thermal processed MBE GaAs on Si and GaAs wafers" JOURNAL OF CRYSTAL GROWTH.

    • Related Report
      1989 Annual Research Report
  • [Publications] 宇佐見晶: "光導電減衰法を用いたMBE GaAs on Siの非接触評価" 電子情報通信学会 技報 シリコン材料・デバイス. SDM89ー131. 1-5 (1989)

    • Related Report
      1989 Annual Research Report

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Published: 1990-04-01   Modified: 2016-04-21  

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